PANASONIC UN2154

Transistors with built-in Resistor
UN2154
Silicon PNP epitaxial planer transistor
Unit: mm
+0.2
2.8 –0.3
For digital circuits
1.45
0.95
1
3
+0.1
0.4 –0.05
+0.2
1.9±0.2
(Ta=25˚C)
+0.1
0.16 –0.06
0.8
1.1 –0.1
0.1 to 0.3
0.4±0.2
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
–30
V
Collector to emitter voltage
VCEO
–30
V
Collector current
IC
–100
mA
Total power dissipation
PT
200
mW
Junction temperature
Tj
150
˚C
Storage temperature
Tstg
–55 to +150
˚C
1:Base
2:Emitter
3:Collector
0 to 0.1
■ Absolute Maximum Ratings
0.65±0.15
2
+0.2
●
High forward current transfer ratio hFE.
Costs can be reduced through downsizing of the equipment and
reduction of the number of parts.
Mini type package, allowing downsizing of the equipment and
automatic insertion through tape packing and magazine packing.
1.5 –0.05
0.95
●
2.9 –0.05
■ Features
●
+0.25
0.65±0.15
EIAJ:SC-59
Mini Type Package
Marking Symbol: EV
Internal Connection
C
R1(10kΩ)
B
R2
(47kΩ)
E
■ Electrical Characteristics
Parameter
(Ta=25˚C)
Symbol
Conditions
min
typ
max
Unit
Collector to base voltage
VCBO
IC = –10µA, IE = 0
–30
V
Collector to emitter voltage
VCEO
IC = –2mA, IB = 0
–30
V
ICBO
VCB = –30V, IE = 0
– 0.1
µA
ICEO
VCE = –30V, IB = 0
– 0.5
µA
Emitter cutoff current
IEBO
VEB = –3V, IC = 0
– 0.1
mA
Forward current transfer ratio
hFE
VCE = –10V, IC = –5mA
Collector to emitter saturation voltage
VCE(sat)
IC = –50mA, IB = – 0.33mA
Output voltage high level
VOH
VCC = –5V, VB = – 0.5V, RL = 1kΩ
Output voltage low level
VOL
VCC = –5V, VB = –2.5V, RL = 1kΩ
Input resistance
R1
Resistance ratio
R1/R2
Transition frequency
fT
Collector cutoff current
80
– 0.5
–1.2
–4.9
–30%
VCB = –10V, IE = 1mA, f = 200MHz
—
V
V
10
– 0.2
V
+30%
kΩ
0.213
—
80
MHz
1
Transistors with built-in Resistor
UN2154
PT — Ta
IC — VCE
IB=–1.0mA
Collector current IC (mA)
Total power dissipation PT (mW)
–175
200
150
100
50
–0.9mA
–0.8mA
–150
–0.7mA
–0.6mA
–125
–0.5mA
–100
–0.4mA
–75
–0.3mA
–50
–0.2mA
–25
–0.1mA
0
0
0
20
40
60
0
80 100 120 140 160
–2
hFE — IC
250
25˚C
200
–25˚C
150
100
50
–10
–100
–1000
Collector current IC (mA)
VO=–0.2V
Ta=25˚C
–10
–1
–0.1
–1
–10
25˚C
Ta=75˚C
–0.1
–25˚C
–0.01
–1
–12
–10
–10
Output current IO (mA)
f=1MHz
IE=0
Ta=25˚C
5
–100
–100
–1000
Collector current IC (mA)
IO — VIN
4
3
2
–10000
VO=–5V
Ta=25˚C
–1000
–100
–10
1
0
–1
–10
–100
Collector to base voltage VCB (V)
VIN — IO
–100
–8
Output current IO (µA)
Forward current transfer ratio hFE
VCE=–10V
Collector output capacitance Cob (pF)
6
Ta=75˚C
–0.01
–0.1
–6
–1
Cob — VCB
300
0
–1
–4
IC/IB=10
–10
Collector to emitter voltage VCE (V)
Ambient temperature Ta (˚C)
Input voltage VIN (V)
Collector to emitter saturation voltage VCE(sat) (V)
–100
Ta=25˚C
2
VCE(sat) — IC
–200
250
–1
–0.4
–0.6
–0.8
–1
–1.2
Input voltage VIN (V)
–1.4