TRENCHSTOP™ Series Low Loss IGBT : IGU04N60T q IGBT in TRENCHSTOP™ technology C G Very low VCE(sat) 1.5 V (typ.) Maximum Junction Temperature 175°C Short circuit withstand time 5s Designed for : - frequency inverters - drives TRENCHSTOP™ technology for 600V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior - very high switching speed - low VCE(sat) Positive temperature coefficient in VCE(sat) Low EMI Low Gate Charge Qualified according to JEDEC1 for target applications Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ Type IGU04N60T E PG-TO251-3 VCE IC VCE(sat),Tj=25°C Tj,max Marking Package 600 V 4A 1.5 V 175 C G04T60 PG-TO251-3 Maximum Ratings Parameter Symbol Collector-emitter voltage VCE DC collector current, limited by Tjmax TC = 25C TC = 100C Value Unit 600 V IC 8 4 A Pulsed collector current, tp limited by Tjmax ICpul s 12 Turn off safe operating area (VCE 600V, Tj 175C) - 12 Gate-emitter voltage VGE 20 V tSC 5 s Power dissipation TC = 25C Ptot 42 W Operating junction temperature Tj -40...+175 C Storage temperature Tstg -55...+150 Soldering temperature, wave soldering, 1.6mm (0.063 in.) from case for 10s. Ts 2) Short circuit withstand time VGE = 15V, VCC 400V, Tj 150C 1 2) 260 C J-STD-020 and JESD-022 Allowed number of short circuits: <1000; time between short circuits: >1s. Power Semiconductors 1 Rev. 2.0 24.02.2014 TRENCHSTOP™ Series IGU04N60T q Thermal Resistance Parameter Symbol Conditions Max. Value Unit RthJC 3.5 K/W RthJA 75 Characteristic IGBT thermal resistance, junction – case Thermal resistance, junction – ambient Electrical Characteristic, at Tj = 25 C, unless otherwise specified Parameter Symbol Conditions Value min. Typ. max. 600 - - T j =2 5 C - 1.5 2.05 T j =1 7 5 C - 1.9 - 4.1 4.9 5.7 Unit Static Characteristic Collector-emitter breakdown voltage V ( B R ) C E S V G E = 0V , I C = 0 .2m A Collector-emitter saturation voltage VCE(sat) V V G E = 15 V , I C = 4 A Gate-emitter threshold voltage VGE(th) I C = 6 0µ A ,V C E = V G E Zero gate voltage collector current ICES V C E = 60 0 V , V G E = 0V µA T j =2 5 C - - 40 T j =1 7 5 C - 40 - Gate-emitter leakage current IGES V C E = 0V , V G E =2 0 V - - 100 nA Transconductance gfs V C E = 20 V , I C = 4 A - 2.2 - S Input capacitance Ciss V C E = 25 V , - 252 - pF Output capacitance Coss V G E = 0V , - 20 - Reverse transfer capacitance Crss f= 1 MH z - 7.5 - Gate charge QGate V C C = 48 0 V, I C =4 A - 27 - nC - 7 - nH - 36 - A Dynamic Characteristic V G E = 15 V LE Internal emitter inductance measured 5mm (0.197 in.) from case Short circuit collector current 1) 1) IC(SC) V G E = 15 V ,t S C 5 s V C C = 4 0 0 V, T j 150C Allowed number of short circuits: <1000; time between short circuits: >1s. Power Semiconductors 2 Rev. 2.0 24.02.2014 TRENCHSTOP™ Series IGU04N60T q Switching Characteristic, Inductive Load, at Tj=25 C Parameter Symbol Conditions Value min. Typ. max. - 14 - - 7 - - 164 - - 43 - - 61 - - 84 - - 145 - Unit IGBT Characteristic Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff Total switching energy Ets T j=25 C, VCC=400V,IC=4A, VGE=0/15V, rG=47 , L =150nH, C=47pF L , C f rom Fig. E Energy losses include “tail” and diode reverse recovery. ns µJ Switching Characteristic, Inductive Load, at Tj=175 C Parameter Symbol Conditions Value min. Typ. max. - 14 - - 10 - - 185 - - 83 - - 99 - - 97 - - 196 - Unit IGBT Characteristic Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff Total switching energy Ets Power Semiconductors T j=175 C, VCC=400V,IC=4A, VGE=0/15V, rG=47 , L =150nH, C=47pF L , C f rom Fig. E Energy losses include “tail” and diode reverse recovery. 3 ns µJ Rev. 2.0 24.02.2014 TRENCHSTOP™ Series t p=2µs 10A 12A 10A IC, COLLECTOR CURRENT IC, COLLECTOR CURRENT IGU04N60T q T C =80°C 8A T C =110°C 6A 4A Ic 2A 10µs 1A 50µs 1ms 0.1A Ic DC 10ms 0A 10H z 100H z 1kH z 10kH z 1V 100kH z f, SWITCHING FREQUENCY Figure 1. Collector current as a function of switching frequency (Tj 175C, D = 0.5, VCE = 400V, VGE = 0/15V, rG = 47) 10V 100V 1000V VCE, COLLECTOR-EMITTER VOLTAGE Figure 2. Safe operating area (D = 0, TC = 25C, Tj 175C; VGE=0/15V) 8A 7A IC, COLLECTOR CURRENT Ptot, POWER DISSIPATION 40W 30W 20W 6A 5A 4A 3A 2A 10W 1A 0W 25°C 50°C 75°C 0A 25°C 100°C 125°C 150°C TC, CASE TEMPERATURE Figure 3. Power dissipation as a function of case temperature (Tj 175C) Power Semiconductors 50°C 75°C 100°C 125°C 150°C 175°C TC, CASE TEMPERATURE Figure 4. Collector current as a function of case temperature (VGE 15V, Tj 175C) 4 Rev. 2.0 24.02.2014 TRENCHSTOP™ Series 8A 10A V GE =20V IC, COLLECTOR CURRENT IC, COLLECTOR CURRENT 10A 15V 13V 6A 11V 9V 4A 7V 2A V GE =20V 8A 15V 13V 6A 11V 9V 4A 7V 2A 0A 0A 0V 1V 2V 3V 0V 8A 6A 4A 2A T J = 1 7 5 °C 2 5 °C 0A 0V 2V 4V 6V 2V 2.5V 3V IC =8A 2.0V 1.5V IC =4A 1.0V IC =2A 0.5V 0.0V 0°C 8V VGE, GATE-EMITTER VOLTAGE Figure 7. Typical transfer characteristic (VCE=20V) Power Semiconductors 1V VCE, COLLECTOR-EMITTER VOLTAGE Figure 6. Typical output characteristic (Tj = 175°C) VCE(sat), COLLECTOR-EMITT SATURATION VOLTAGE VCE, COLLECTOR-EMITTER VOLTAGE Figure 5. Typical output characteristic (Tj = 25°C) IC, COLLECTOR CURRENT IGU04N60T q 50°C 100°C 150°C TJ, JUNCTION TEMPERATURE Figure 8. Typical collector-emitter saturation voltage as a function of junction temperature (VGE = 15V) 5 Rev. 2.0 24.02.2014 TRENCHSTOP™ Series IGU04N60T q t d(off) t d(off) tf t d(on) 10ns t, SWITCHING TIMES t, SWITCHING TIMES 100ns tr 100ns tf t d(on) 10ns tr 1ns 0A 2A 4A 6A IC, COLLECTOR CURRENT Figure 9. Typical switching times as a function of collector current (inductive load, TJ=175°C, VCE = 400V, VGE = 0/15V, rG = 47Ω, Dynamic test circuit in Figure E) RG, GATE RESISTOR Figure 10. Typical switching times as a function of gate resistor (inductive load, TJ = 175°C, VCE= 400V, VGE = 0/15V, IC = 4A, Dynamic test circuit in Figure E) t d(off) 100ns t, SWITCHING TIMES tf t d(on) 10ns tr 25°C 50°C 75°C 6V m ax. typ. 5V 4V m in. 3V 2V 1V 0V -50°C 100°C 125°C 15 0°C TJ, JUNCTION TEMPERATURE Figure 11. Typical switching times as a function of junction temperature (inductive load, VCE = 400V, VGE = 0/15V, IC = 4A, rG=47Ω, Dynamic test circuit in Figure E) Power Semiconductors VGE(th), GATE-EMITT TRSHOLD VOLTAGE 7V 6 0°C 50°C 100°C 150°C TJ, JUNCTION TEMPERATURE Figure 12. Gate-emitter threshold voltage as a function of junction temperature (IC = 60 µA) Rev. 2.0 24.02.2014 TRENCHSTOP™ Series *) E on and E ts include losses *) E on an d E ts in c lu d e lo s s es due to diode recovery E ts * 0 .3m J E off 0 .2m J E on * 0 .1m J E, SWITCHING ENERGY LOSSES E, SWITCHING ENERGY LOSSES d u e to d io de re c ov e ry 0.4 mJ E ts* 0.3 mJ E off 0.2 mJ E on* 0.1 mJ 0.0 mJ 0 .0m J 0A 2A 4A 6A IC, COLLECTOR CURRENT Figure 13. Typical switching energy losses as a function of collector current (inductive load, TJ = 175°C, VCE = 400V, VGE = 0/15V, rG = 47Ω, Dynamic test circuit in Figure E) E, SWITCHING ENERGY LOSSES E, SWITCHING ENERGY LOSSES due to diode recovery E ts * 100µJ E off 75µJ 50µJ E on * 25µJ 0µJ 25°C 50°C 75°C 100°C 125°C 150°C TJ, JUNCTION TEMPERATURE Figure 15. Typical switching energy losses as a function of junction temperature (inductive load, VCE = 400V, VGE = 0/15V, IC = 4A, rG = 47Ω, Dynamic test circuit in Figure E) Power Semiconductors *) E on and E ts include losses 150µJ 125µJ RG, GATE RESISTOR Figure 14. Typical switching energy losses as a function of gate resistor (inductive load, TJ = 175°C, VCE = 400V, VGE = 0/15V, IC = 4A, Dynamic test circuit in Figure E) *) E on and E ts include losses 175µJ IGU04N60T q 7 due to diode recovery 0.25m J 0.20m J E ts * 0.15m J 0.10m J E off 0.05m J E on * 0.00m J 300V 350V 400V 450V VCE, COLLECTOR-EMITTER VOLTAGE Figure 16. Typical switching energy losses as a function of collector emitter voltage (inductive load, TJ = 175°C, VGE = 0/15V, IC = 4A, rG = 47Ω, Dynamic test circuit in Figure E) Rev. 2.0 24.02.2014 TRENCHSTOP™ Series IGU04N60T q 15V 120V c, CAPACITANCE VGE, GATE-EMITTER VOLTAGE C iss 480V 10V 100pF C oss 5V 10pF C rss 0V 0nC 5nC 0V 10nC 15nC 20nC 25nC 30nC VCE, COLLECTOR-EMITTER VOLTAGE Figure 18. Typical capacitance as a function of collector-emitter voltage (VGE=0V, f = 1 MHz) 12µs 60A tSC, SHORT CIRCUIT WITHSTAND TIME IC(sc), SHORT CIRCUIT COLLECTOR CURRENT QGE, GATE CHARGE Figure 17. Typical gate charge (IC=4 A) 10V 20V 30V 40V 50V 60V 70V 50A 40A 30A 20A 10A 0A 12V 14V 16V 8µs 6µs 4µs 2µs 0µs 10V 18V VGE, GATE-EMITTER VOLTAGE Figure 19. Typical short circuit collector current as a function of gate-emitter voltage (VCE 400V, Tj 150C) Power Semiconductors 10µs 8 11V 12V 13V 14V VGE, GATE-EMITTER VOLTAGE Figure 20. Short circuit withstand time as a function of gate-emitter voltage (VCE=400V, start at Tj=25°C, Tj,max<150°C) Rev. 2.0 24.02.2014 TRENCHSTOP™ Series IGU04N60T q ZthJC, TRANSIENT THERMAL RESISTANCE ZthJC, TRANSIENT THERMAL IMPEDANCE D=0.5 0 10 K/W 0.2 R,(K/W) 0.38216 0.68326 1.49884 0.93550 0.1 R1 , (s) 5.16*10-2 7.818*10-3 9*10-4 1.134*10-4 R2 0.05 -1 10 K/W 0.02 0.01 C 1 = 1 /R 1 C 2 = 2 /R 2 single pulse 1µs 10µs 100µs 1ms 10ms 100ms tP, PULSE WIDTH Figure 21. IGBT transient thermal impedance (D = tp / T) Power Semiconductors 9 Rev. 2.0 24.02.2014 TRENCHSTOP™ Series IGU04N60T q PG-TO251-3 Power Semiconductors 10 Rev. 2.0 24.02.2014 TRENCHSTOP™ Series IGU04N60T q i,v tr r =tS +tF diF /dt Qr r =QS +QF tr r IF tS QS Ir r m tF QF 10% Ir r m dir r /dt 90% Ir r m t VR Figure C. Definition of diodes switching characteristics 1 2 r1 r2 n rn Tj (t) p(t) r1 r2 rn Figure A. Definition of switching times TC Figure D. Thermal equivalent circuit Figure B. Definition of switching losses Power Semiconductors 11 Rev. 2.0 24.02.2014 TRENCHSTOP™ Series IGU04N60T q Published by Infineon Technologies AG 81726 Munich, Germany © 2014 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. The Infineon Technologies component described in this Data Sheet may be used in life-support devices or systems and/or automotive, aviation and aerospace applications or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support, automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Power Semiconductors 12 Rev. 2.0 24.02.2014