TRENCHSTOP™ Series IGW75N60T q Low Loss IGBT: IGBT in TRENCHSTOP™ and Fieldstop technology C Features: Very low VCE(sat) 1.5V (typ.) Maximum Junction Temperature 175°C Short circuit withstand time 5s Designed for : - Frequency Converters - Uninterrupted Power Supply TRENCHSTOP™ and Fieldstop technology for 600V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior - very high switching speed Positive temperature coefficient in VCE(sat) Low EMI Low Gate Charge Qualified according to JEDEC1 for target applications Pb-free lead plating; RoHS compliant Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ Type IGW75N60T G E PG-TO247-3 VCE IC VCE(sat),Tj=25°C Tj,max Marking Package 600V 75A 1.5V 175C G75T60 PG-TO247-3 Maximum Ratings Parameter Symbol Value Collector-emitter voltage, Tj ≥ 25C VCE 600 IC 150 Unit V DC collector current, limited by Tjmax TC = 25C 75 TC = 100C A Pulsed collector current, tp limited by Tjmax ICpul s 225 Turn off safe operating area VCE = 600V, Tj = 175C, tp = 1µs - 225 Gate-emitter voltage VGE 20 V tSC 5 s Power dissipation TC = 25C Ptot 428 W Operating junction temperature Tj -40...+175 Storage temperature Tstg -55...+150 Soldering temperature, 1.6mm (0.063 in.) from case for 10s - 2) Short circuit withstand time VGE = 15V, VCC 400V, Tj 150C 1 2) C 260 J-STD-020 and JESD-022 Allowed number of short circuits: <1000; time between short circuits: >1s. IFAG IPC TD VLS 1 Rev. 2.6 20.09.2013 TRENCHSTOP™ Series IGW75N60T q Thermal Resistance Parameter Symbol Conditions Max. Value Unit RthJC 0.35 K/W RthJA 40 Characteristic IGBT thermal resistance, junction – case Thermal resistance, junction – ambient Electrical Characteristic, at Tj = 25 C, unless otherwise specified Parameter Symbol Conditions Value min. Typ. max. 600 - - T j =2 5 C - 1.5 2.0 T j =1 7 5 C - 1.9 - 4.1 4.9 5.7 Unit Static Characteristic Collector-emitter breakdown voltage V ( B R ) C E S V G E = 0V , I C = 0 .2m A Collector-emitter saturation voltage VCE(sat) V V G E = 15 V , I C = 75 A Gate-emitter threshold voltage VGE(th) I C = 1. 2m A, V C E = V G E Zero gate voltage collector current ICES V C E = 60 0 V , V G E = 0V µA T j =2 5 C - - 40 T j =1 7 5 C - - 5000 Gate-emitter leakage current IGES V C E = 0V , V G E =2 0 V - - 100 nA Transconductance gfs V C E = 20 V , I C = 75 A - 41 - S Integrated gate resistor RGint - Ω Dynamic Characteristic Input capacitance Ciss V C E = 25 V , - 4620 - Output capacitance Coss V G E = 0V , - 288 - Reverse transfer capacitance Crss f= 1 MH z - - Gate charge QGate V C C = 48 0 V, I C =7 5 A - 137 470 - nC - 13 - nH - 687.5 - A pF V G E = 15 V LE Internal emitter inductance measured 5mm (0.197 in.) from case Short circuit collector current 1) 1) IC(SC) V G E = 15 V ,t S C 5 s V C C = 4 0 0 V, T j 150C Allowed number of short circuits: <1000; time between short circuits: >1s. IFAG IPC TD VLS 2 Rev. 2.6 20.09.2013 TRENCHSTOP™ Series IGW75N60T q Switching Characteristic, Inductive Load, at Tj=25 C Parameter Symbol Conditions Value min. Typ. max. - 33 - - 36 - - 330 - - 35 - - 2.0 - - 2.5 - - 4.5 - Unit IGBT Characteristic Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf 1) Turn-on energy Eon Turn-off energy Eoff Total switching energy Ets T j=25 C, VCC=400V,IC=75A, VGE=0/15V, rG=5 , L =100nH, C=39pF L , C f rom Fig. E Energy losses include “tail” and diode reverse recovery. Diode from IKW75N60T ns mJ Switching Characteristic, Inductive Load, at Tj=175 C Parameter Symbol Conditions Value min. Typ. max. - 32 - - 37 - - 363 - - 38 - - 2.9 - - 2.9 - - 5.8 - Unit IGBT Characteristic Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf 1) Turn-on energy Eon Turn-off energy Eoff Total switching energy Ets IFAG IPC TD VLS T j=175 C, VCC=400V,IC=75A, VGE=0/15V, rG=5 , L =100nH, C=39pF L , C f rom Fig. E Energy losses include “tail” and diode reverse recovery. Diode from IKW75N60T 3 ns mJ Rev. 2.6 20.09.2013 TRENCHSTOP™ Series IGW75N60T q t p=1µs 200A 100A IC, COLLECTOR CURRENT IC, COLLECTOR CURRENT 10µs 150A T C =80°C 100A T C =110°C Ic 50A 100H z 10A 1ms DC 1A Ic 0A 10H z 50µs 1kHz 10kHz 1V 100kHz f, SWITCHING FREQUENCY Figure 1. Collector current as a function of switching frequency (Tj 175C, D = 0.5, VCE = 400V, VGE = 0/15V, rG = 5) 10V 100V 10ms 1000V VCE, COLLECTOR-EMITTER VOLTAGE Figure 2. Safe operating area (D = 0, TC = 25C, Tj 175C; VGE=0/15V) 400W 120A IC, COLLECTOR CURRENT Ptot, POWER DISSIPATION 350W 300W 250W 200W 150W 100W 90A 60A 30A 50W 0W 25°C 50°C 75°C 0A 25°C 100°C 125°C 150°C TC, CASE TEMPERATURE Figure 3. Power dissipation as a function of case temperature (Tj 175C) IFAG IPC TD VLS 4 75°C 125°C TC, CASE TEMPERATURE Figure 4. DC Collector current as a function of case temperature (VGE 15V, Tj 175C) Rev. 2.6 20.09.2013 TRENCHSTOP™ Series 120A 120A IC, COLLECTOR CURRENT IC, COLLECTOR CURRENT V GE =20V 15V 90A 13V 11V 9V 60A 7V 30A 0A V G E =20V 15V 90A 13V 11V 9V 60A 7V 30A 0A 0V 1V 2V 3V 0V 80A 60A 40A T J = 1 7 5 °C 20A 2 5 °C 0A 0V 2V 4V 6V 8V VGE, GATE-EMITTER VOLTAGE Figure 7. Typical transfer characteristic (VCE=20V) IFAG IPC TD VLS 1V 2V 3V VCE, COLLECTOR-EMITTER VOLTAGE Figure 6. Typical output characteristic (Tj = 175°C) VCE(sat), COLLECTOR-EMITT SATURATION VOLTAGE VCE, COLLECTOR-EMITTER VOLTAGE Figure 5. Typical output characteristic (Tj = 25°C) IC, COLLECTOR CURRENT IGW75N60T q 2.5V IC =150A 2.0V IC =75A 1.5V IC =37.5A 1.0V 0.5V 0.0V 0°C 50°C 100°C 150°C TJ, JUNCTION TEMPERATURE Figure 8. Typical collector-emitter saturation voltage as a function of junction temperature (VGE = 15V) 5 Rev. 2.6 20.09.2013 TRENCHSTOP™ Series IGW75N60T q t, SWITCHING TIMES t, SWITCHING TIMES t d(off) 100ns tf t d(off) 100 ns tf tr t d(on) t d(on) tr 10 ns 10ns 0A 40A 80A 120A IC, COLLECTOR CURRENT Figure 9. Typical switching times as a function of collector current (inductive load, TJ=175°C, VCE = 400V, VGE = 0/15V, rG = 5Ω, Dynamic test circuit in Figure E) RG, GATE RESISTOR Figure 10. Typical switching times as a function of gate resistor (inductive load, TJ = 175°C, VCE= 400V, VGE = 0/15V, IC = 75A, Dynamic test circuit in Figure E) t, SWITCHING TIMES t d(off) 100ns tf tr t d(on) 25°C 50°C 75°C 6V m ax. typ. 5V 4V m in. 3V 2V 1V 0V -50°C 100°C 125°C 15 0°C TJ, JUNCTION TEMPERATURE Figure 11. Typical switching times as a function of junction temperature (inductive load, VCE = 400V, VGE = 0/15V, IC = 75A, rG=5Ω, Dynamic test circuit in Figure E) IFAG IPC TD VLS VGE(th), GATE-EMITT TRSHOLD VOLTAGE 7V 0°C 50°C 100°C 150°C TJ, JUNCTION TEMPERATURE Figure 12. Gate-emitter threshold voltage as a function of junction temperature (IC = 1.2mA) 6 Rev. 2.6 20.09.2013 TRENCHSTOP™ Series *) E on a nd E ts in clu d e lo ss e s Ets* d u e to d io d e rec o v e ry 12.0mJ Eon* 8.0mJ Eoff 4.0mJ E, SWITCHING ENERGY LOSSES E, SWITCHING ENERGY LOSSES *) Eon and Ets include losses due to diode recovery IGW75N60T q E ts * 8 .0m J 6 .0m J 4 .0m J E on * 2 .0m J E off 0 .0m J 0.0mJ 0A 20A 40A 60A 80A 100A 120A 140A IC, COLLECTOR CURRENT Figure 13. Typical switching energy losses as a function of collector current (inductive load, TJ = 175°C, VCE = 400V, VGE = 0/15V, rG = 5Ω, Dynamic test circuit in Figure E) *) Eon and Ets include losses due to diode recovery due to diode recovery Ets* Eoff 2.0mJ Eon* 1.0mJ 0.0mJ 25°C 50°C 75°C 8m J E on * 6m J E ts * 4m J E off 2m J 0m J 300V 100°C 125°C 150°C TJ, JUNCTION TEMPERATURE Figure 15. Typical switching energy losses as a function of junction temperature (inductive load, VCE = 400V, VGE = 0/15V, IC = 75A, rG = 5Ω, Dynamic test circuit in Figure E) IFAG IPC TD VLS *) E on and E ts include losses 4.0mJ 3.0mJ RG, GATE RESISTOR Figure 14. Typical switching energy losses as a function of gate resistor (inductive load, TJ = 175°C, VCE = 400V, VGE = 0/15V, IC = 75A, Dynamic test circuit in Figure E) E, SWITCHING ENERGY LOSSES E, SWITCHING ENERGY LOSSES 5.0mJ 350V 400V 450V 500V 550V VCE, COLLECTOR-EMITTER VOLTAGE Figure 16. Typical switching energy losses as a function of collector emitter voltage (inductive load, TJ = 175°C, VGE = 0/15V, IC = 75A, rG = 5Ω, Dynamic test circuit in Figure E) 7 Rev. 2.6 20.09.2013 TRENCHSTOP™ Series IGW75N60T q VGE, GATE-EMITTER VOLTAGE C iss c, CAPACITANCE 15V 120V 10V 480V 1nF C oss 5V C rss 100pF 0V 0nC 100nC 200nC 300nC 0V 400nC QGE, GATE CHARGE Figure 17. Typical gate charge (IC=75 A) 10V 20V VCE, COLLECTOR-EMITTER VOLTAGE Figure 18. Typical capacitance as a function of collector-emitter voltage (VGE=0V, f = 1 MHz) tSC, SHORT CIRCUIT WITHSTAND TIME IC(sc), short circuit COLLECTOR CURRENT 12µs 1000A 750A 500A 250A 0A 12V 14V 16V 8µs 6µs 4µs 2µs 0µs 10V 18V VGE, GATE-EMITTETR VOLTAGE Figure 19. Typical short circuit collector current as a function of gateemitter voltage (VCE 400V, Tj 150C) IFAG IPC TD VLS 10µs 11V 12V 13V 14V VGE, GATE-EMITETR VOLTAGE Figure 20. Short circuit withstand time as a function of gate-emitter voltage (VCE=400V, start at TJ=25°C, TJmax<150°C) 8 Rev. 2.6 20.09.2013 TRENCHSTOP™ Series IGW75N60T q ZthJC, TRANSIENT THERMAL IMPEDANCE D=0.5 -1 10 K/W 0.2 0.1 R,(K/W) 0.1968 0.0733 0.0509 0.02 0.0290 0.05 -2 10 K/W 0.01 R 1 , (s) 0.115504 0.009340 0.000823 0.000119 R2 C 1 = 1 /R 1 C 2 = 2 /R 2 single pulse -3 10 K/W 1µs 10µs 100µs 1ms 10ms 100ms tP, PULSE WIDTH Figure 21. IGBT transient thermal impedance (D = tp / T) IFAG IPC TD VLS 9 Rev. 2.6 20.09.2013 TRENCHSTOP™ Series IFAG IPC TD VLS 10 IGW75N60T q Rev. 2.6 20.09.2013 TRENCHSTOP™ Series IGW75N60T q i,v tr r =tS +tF diF /dt Qr r =QS +QF tr r IF tS QS Ir r m tF QF 10% Ir r m dir r /dt 90% Ir r m t VR Figure C. Definition of diodes switching characteristics 1 2 r1 r2 n rn Tj (t) p(t) r1 r2 rn Figure A. Definition of switching times TC Figure D. Thermal equivalent circuit Figure B. Definition of switching losses IFAG IPC TD VLS 11 Rev. 2.6 20.09.2013 TRENCHSTOP™ Series IGW75N60T q Published by Infineon Technologies AG 81726 Munich, Germany © 2013 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. The Infineon Technologies component described in this Data Sheet may be used in life-support devices or systems and/or automotive, aviation and aerospace applications or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support, automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. IFAG IPC TD VLS 12 Rev. 2.6 20.09.2013