Si7946DP Vishay Siliconix New Product Dual N-Channel 150-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) 150 rDS(on) (W) ID (A) 0.150 @ VGS = 10 V 3.3 0.168 @ VGS = 6 V 3.1 TrenchFET Power MOSFET New Low Thermal Resistance PowerPAK Dual MOSFET for Space Savings PWM Optimized for Fast Switching Avalanche Rated Package APPLICATIONS Primary Side Switch PowerPAK SO-8 D1 S1 6.15 mm 1 D2 5.15 mm G1 2 S2 3 G2 4 G1 D1 8 G2 D1 7 D2 6 D2 5 S1 Bottom View S2 N-Channel MOSFET N-Channel MOSFET Ordering Information: Si7946DP-T1 ABSOLUTE MAXIMUM RATINGS (TA = 25C UNLESS OTHERWISE NOTED) Parameter Symbol 10 secs Steady State Drain-Source Voltage VDS 150 Gate-Source Voltage VGS "20 Continuous Drain Current (TJ = 150C)a TA = 25C TA = 70C Pulsed Drain Current ID Continuous Source Current (Diode Conduction)a Single Avalanche Current IS L = 0.1 mH Single Avalanche Energy TA = 25C Maximum Power Dissipationa TA = 70C Operating Junction and Storage Temperature Range 2.1 2.6 1.7 10 A 2.9 1.2 IAS 9 EAS 4 PD V 3.3 IDM mJ 3.5 1.4 2.2 0.9 TJ, Tstg Unit -55 to 150 W C THERMAL RESISTANCE RATINGS Parameter M i Maximum JJunction-to-Ambient ti t A bi ta Maximum Junction-to-Case (Drain) Symbol t v 10 sec Steady State Steady State RthJA RthJC Typical Maximum 26 35 60 85 3.2 4.2 Unit C/W C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 72282 S-31361—Rev. A, 30-Jun-03 www.vishay.com 1 Si7946DP Vishay Siliconix New Product SPECIFICATIONS (TJ = 25C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min VGS(th) VDS = VGS, ID = 250 mA 2 IGSS Typ Max Unit 4.0 V VDS = 0 V, VGS = "20 V "100 nA VDS = 120 V, VGS = 0 V 1 VDS = 120 V, VGS = 0 V, TJ = 55C 5 Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea 10 VDS w 5 V, VGS = 10 V rDS(on) mA A VGS = 10 V, ID = 3.3 A 0.124 0.150 VGS = 6 V, ID = 3.1 A 0.137 0.168 gfs VDS = 15 V, ID = 3.3 A 9 VSD IS = 2.9 A, VGS = 0 V 0.87 1.2 12.6 20 W S V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resostamce Rg Turn-On Delay Time Rise Time Turn-Off Delay Time VDS = 75 V, VGS = 10 V, ID = 3.3 A nC 2.8 4.5 f = 1MHz 3.5 W td(on) 11 20 tr 15 25 30 45 20 30 62 100 VDD = 75 V, RL = 75 W ID ^ 1 A, VGEN = 10 V, RG = 6 W td(off) Fall Time tf Source-Drain Reverse Recovery Time trr IF = 2.9 A, di/dt = 100 A/ms ns Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25C UNLESS NOTED) Output Characteristics Transfer Characteristics 10 10 VGS = 10 thru 6 V 8 I D - Drain Current (A) I D - Drain Current (A) 8 5V 6 4 2 6 4 TC = 125C 2 25C 4V -55C 0 0 0 1 2 3 4 VDS - Drain-to-Source Voltage (V) www.vishay.com 2 5 0 1 2 3 4 5 6 VGS - Gate-to-Source Voltage (V) Document Number: 72282 S-31361—Rev. A, 30-Jun-03 Si7946DP Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25C UNLESS NOTED) On-Resistance vs. Drain Current 0.16 VGS = 6 V 0.12 Capacitance 1000 C - Capacitance (pF) r DS(on) - On-Resistance ( W ) 0.20 VGS = 10 V 0.08 0.04 800 Ciss 600 400 Coss 200 0.00 0 0 2 4 6 8 10 0 10 20 ID - Drain Current (A) 30 40 50 60 70 80 VDS - Drain-to-Source Voltage (V) Gate Charge On-Resistance vs. Junction Temperature 10 2.4 VDS = 75 V ID = 3.3 A r DS(on) - On-Resistance ( W) (Normalized) V GS - Gate-to-Source Voltage (V) Crss 8 6 4 2 VGS = 10 V ID = 3.3 A 2.0 1.6 1.2 0.8 0 0 3 6 9 12 0.4 -50 15 -25 0 Qg - Total Gate Charge (nC) 25 50 75 100 125 150 TJ - Junction Temperature (C) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.40 10 r DS(on) - On-Resistance ( W ) I S - Source Current (A) 0.35 TJ = 150C TJ = 25C 0.30 ID = 3.3 A 0.25 ID = 1 A 0.20 0.15 0.10 0.05 1 0.0 0.00 0.2 0.4 0.6 0.8 1.0 VSD - Source-to-Drain Voltage (V) Document Number: 72282 S-31361—Rev. A, 30-Jun-03 1.2 0 2 4 6 8 10 VGS - Gate-to-Source Voltage (V) www.vishay.com 3 Si7946DP Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25C UNLESS NOTED) Threshold Voltage Single Pulse Power 0.8 50 40 ID = 250 mA 0.0 30 Power (W) V GS(th) Variance (V) 0.4 -0.4 20 -0.8 10 -1.2 -50 -25 0 25 50 75 100 125 0 0.01 150 0.1 100 100 1000 Safe Operating Area, Junction-To-Ambient rDS(on) Limited IDM Limited 10 I D - Drain Current (A) 10 1 Time (sec) TJ - Temperature (C) P(t) = 0.0001 P(t) = 0.001 1 P(t) = 0.01 ID(on) Limited P(t) = 0.1 P(t) = 1 0.1 TA = 25C Single Pulse dc BVDSS Limited 0.01 0.1 P(t) = 10 1 10 100 VDS - Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 60C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10 - 4 www.vishay.com 4 10 - 3 10 - 2 10 - 1 1 Square Wave Pulse Duration (sec) 10 100 600 Document Number: 72282 S-31361—Rev. A, 30-Jun-03 Si7946DP Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Case Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 - 4 10 - 3 10 - 2 10 - 1 1 Square Wave Pulse Duration (sec) Document Number: 72282 S-31361—Rev. A, 30-Jun-03 www.vishay.com 5