High performance MOSFETs for DC-DC converters, OR-ing and load switching

Ten new high performance
MOSFETs for power
management
High performance MOSFETs for DC-DC
converters, OR-ing and load switching
NXP’s range of 30V Trench 6 logic level MOSFETs deliver significant improvements in efficiency
when used in switching power supply applications, DC-DC converters, POL converters and power
OR-ing. The LFPAK package delivers high current capability and low thermal resistance in a 5mm
x 6mm Power SO8 footprint making the new range of MOSFETs the natural choice for demanding
power-switching applications.
Key benefits
Low PCB space, low cost
} Increased power density whilst maintaining the Power SO8
footprint
} High efficiency gains in switching power converters
} Faster switching supports higher frequencies and use
of smaller inductors & capacitors
} Lower in-circuit power dissipation reduces the need
for cooling
} Uses the PCB as a heatsink and reduces the need
for external heatsink
Key features
} Low ON resistance – RDS(ON) typical from 1.2mOhm
(PSMN1R7-30YL)
} Low thermal resistance - Rth(jc) from 1.1 °K/W
} Low package inductance - typically 1.1nH
} Footprint compatible with SO8 (5mm x 6mm)
} Low profile - package height 1.1mm
} Recommended for switching frequencies up to 1MHz
Key applications
} Voltage Regulator
} Motor Control
} OR-ing
} Load switching
} Li-ion battery protection
} LED lighting / dimming
Ten new devices have been added to the PSMN 30 V range
of MOSFETs from NXP. This range combines the latest silicon
technology (Trench 6), with the high-performance LFPAK
package, which challenges the best performing devices
available in today’s marketplace.
2 Part Leadframe
Chip
Plastic
PCB
Trench 6 silicon technology provides our lowest RDS(ON)
performance yet, at 1.2mOhm typical at Vgs=10 v
(PSMN1R7-30YL). These parts are highly suited to power
OR-ing and SYNC-FET in synchronous buck-regulator
applications.
PCB
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Trench 6 technology also delivers low gate-charge (QG) and low
gate-resistance (Rg) making the devices suitable for switching
frequencies typically up to 1MHz and making them ideally suited
for use in high-efficiency synchronous buck regulators.
LFPAK (Loss Free PAcKage) delivers compact power in
a surface-mount package. It provides superior electrical
& thermal resistance as well as low inductance, while
maintaining the widely accepted SO8 footprint. LFPAK is
compatible with ‘visual inspection’ techniques unlike many
other Power-SO8 devices.
The combination of Trench 6 silicon and LFPAK package
delivers higher operating efficiencies, improved thermal
characteristics and high power density which are essential for
today’s high performance power management applications.
Part Number
VDS
MAX
MAX
RDS(on) @
RDS(on) @
VGS = 10 V
VGS = 4.5 V
V
mΩ
mΩ
PSMN1R7-30YL
30
1.7
2.6
PSMN2R0-30YL
30
2.0
3.2
PSMN2R5-30YL
30
2.4
3.9
PSMN3R0-30YL
30
3.0
4.8
PSMN3R5-30YL
30
3.5
5.6
PSMN4R0-30YL
30
4.0
6.5
PSMN5R0-30YL
30
5.0
8.0
PSMN6R0-30YL
30
6.0
9.7
PSMN7R0-30YL
30
7.0
11.3
PSMN9R0-30YL
30
8.0
13.8
Vin
Gate drive IC
e.g. ISL6609
VdriveHS
D1
CBoot
Q1
PSMN7R0-30YL
VdriveLS
Cin
PWM
GATE
DRIVE
IC
L1
Vout
Cout
0V
Q2
PSMN1R7-30YL
0V
www.nxp.com
0V
0V
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© 2009 NXP B.V.
All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and
Date of release: February 2009
reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use.
Document order number : 9397 750 16655
Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
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