New high-performance Trench 6 MOSFETs in a TO220 package for power management applications Giving you more choice with an extended portfolio of Trench 6 MOSFETs in TO220 We’ve extended our range of Trench 6 MOSFETs with new devices in the industry-standard TO220 (SOT78) package operating at 60 V and 100 V adding to the portfolio of 30 V, 40 V and 80 V. By combining Trench 6 silicon with the TO220 package, our new devices provide customers with many performance and reliability advantages. Our PSMN series of N-channel MOSFETs has been extended to include a range of 60 V and 100 V Trench 6 silicon devices in the TO220 package. The new range offers performance improvements in a wide variety of applications. u2.4 mΩ (typical) 60 V in a TO220 package (PSMN3R0-60PS) u 4.3 mΩ (typical) 100 V in a TO220 package (PSMN5R6-100PS) Trench 6 silicon technology provides NXP’s lowest RDS(ON) uRated to 175 °C performance yet in a TO220 package with 1.4 mΩ typical at Vgs=10 V (PSMN1R6-30PL). These parts are ideal for power uRated for ID(MAX) = 100 A uAvalanche rated uROHS compliant and halogen-free OR-ing, motor control, DC-DC converters, UPS Uninterruptible Power Supplies and other demanding industrial applications. uLow thermal resistance As well as delivering lower RDS(ON) than previous silicon technologies, Trench 6 also offers lower gate-charge (Qg) and low gate resistance (Rg), making the devices suitable for high-efficiency power management applications and higher switching frequencies. The TO220 package delivers compact power in a throughhole package. It provides superior thermal resistance when mounted to a heat-sink. The combination of Trench 6 silicon and TO220 package delivers higher operating efficiencies, lower switching losses, improved current capability and higher power density – essential for today’s high performance power management applications. Notebook Adaptor Synchronous Buck Regulator Vin +DC IN +DC OUT D1 Q2 CBoot DC OUT 0 V Q1 Q1 SYNC RECTIFIER CONTROLLER eg TEA1761 R SENSE DC IN 0 V Cin CONTROL IC eg TEA1750 PWM and Gate Drive IC L1 Vout Cout VOLTAGE FEEDBACK AND ISOLATION eg TEA1761 Q2 brb396 brb292 Selector Guide Type VDS PSMN1R6-30PL PSMN2R0-30PL PSMN4R3-30PL PSMN2R2-40PS PSMN4R5-40PS PSMN8R0-40PS PSMN3R0-60PS PSMN4R6-60PS PSMN7R6-60PS PSMN012-80PS PSMN050-80PS PSMN4R4-80PS PSMN5R0-80PS PSMN013-100PS PSMN016-100PS PSMN027-100PS PSMN034-100PS PSMN5R6-100PS PSMN7R0-100PS PSMN9R5-100PS 30 30 30 40 40 40 60 60 60 80 80 80 80 100 100 100 100 100 100 100 RDS(ON) (typ) RDS(ON) (max) Vgs = 10 V Vgs = 10 V mΩΩ mΩ 1.4 1.7 3.5 1.8 3.9 6.2 2.4 3.8 6.8 9 37 3.3 3.7 11.8 13 21 27 4.3 5.2 7.6 1.7 2.1 4.3 2.1 4.6 7.6 3 4.6 7.8 11 46 4.1 4.7 13.9 16 27 34 5.6 6.8 9.5 Types in Bold Red represent new products Type in Bold Red Italic Underline represent products in development www.nxp.com/mosfets www.nxp.com © 2010 NXP B.V. All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. Date of release: January 2010 The information presented in this document does not form part of any quotation or contract, is believed to be accurate and Document order number : 9397 750 16850 reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Printed in the Netherlands Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.