High performance Trench 6 MOSFETs in a TO220

New high-performance
Trench 6 MOSFETs in a
TO220 package for power
management applications
Giving you more choice with an extended
portfolio of Trench 6 MOSFETs in TO220
We’ve extended our range of Trench 6 MOSFETs with new devices in the industry-standard TO220
(SOT78) package operating at 60 V and 100 V adding to the portfolio of 30 V, 40 V and 80 V.
By combining Trench 6 silicon with the TO220 package,
our new devices provide customers with many performance
and reliability advantages.
Our PSMN series of N-channel MOSFETs has been extended
to include a range of 60 V and 100 V Trench 6 silicon devices
in the TO220 package. The new range offers performance
improvements in a wide variety of applications.
u2.4 mΩ (typical) 60 V in a TO220 package (PSMN3R0-60PS)
u
4.3 mΩ (typical) 100 V in a TO220 package (PSMN5R6-100PS)
Trench 6 silicon technology provides NXP’s lowest RDS(ON)
uRated to 175 °C
performance yet in a TO220 package with 1.4 mΩ typical at
Vgs=10 V (PSMN1R6-30PL). These parts are ideal for power
uRated for ID(MAX) = 100 A
uAvalanche rated
uROHS compliant and halogen-free
OR-ing, motor control, DC-DC converters, UPS Uninterruptible
Power Supplies and other demanding industrial applications.
uLow thermal resistance
As well as delivering lower RDS(ON) than previous silicon
technologies, Trench 6 also offers lower gate-charge (Qg)
and low gate resistance (Rg), making the devices suitable for
high-efficiency power management applications and higher
switching frequencies.
The TO220 package delivers compact power in a throughhole package. It provides superior thermal resistance when
mounted to a heat-sink.
The combination of Trench 6 silicon and TO220 package delivers
higher operating efficiencies, lower switching losses, improved
current capability and higher power density – essential for
today’s high performance power management applications.
Notebook Adaptor
Synchronous Buck Regulator
Vin
+DC IN
+DC OUT
D1
Q2
CBoot
DC OUT 0 V
Q1
Q1
SYNC RECTIFIER
CONTROLLER
eg TEA1761
R SENSE
DC IN 0 V
Cin
CONTROL IC
eg TEA1750
PWM
and
Gate
Drive
IC
L1
Vout
Cout
VOLTAGE FEEDBACK
AND ISOLATION
eg TEA1761
Q2
brb396
brb292
Selector Guide
Type
VDS
PSMN1R6-30PL
PSMN2R0-30PL
PSMN4R3-30PL
PSMN2R2-40PS
PSMN4R5-40PS
PSMN8R0-40PS
PSMN3R0-60PS
PSMN4R6-60PS
PSMN7R6-60PS
PSMN012-80PS
PSMN050-80PS
PSMN4R4-80PS
PSMN5R0-80PS
PSMN013-100PS
PSMN016-100PS
PSMN027-100PS
PSMN034-100PS
PSMN5R6-100PS
PSMN7R0-100PS
PSMN9R5-100PS
30
30
30
40
40
40
60
60
60
80
80
80
80
100
100
100
100
100
100
100
RDS(ON) (typ)
RDS(ON) (max)
Vgs = 10 V
Vgs = 10 V
mΩΩ
mΩ
1.4
1.7
3.5
1.8
3.9
6.2
2.4
3.8
6.8
9
37
3.3
3.7
11.8
13
21
27
4.3
5.2
7.6
1.7
2.1
4.3
2.1
4.6
7.6
3
4.6
7.8
11
46
4.1
4.7
13.9
16
27
34
5.6
6.8
9.5
Types in Bold Red represent new products
Type in Bold Red Italic Underline represent products in development
www.nxp.com/mosfets
www.nxp.com
© 2010 NXP B.V.
All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
Date of release: January 2010
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and
Document order number : 9397 750 16850
reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use.
Printed in the Netherlands
Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.