25 V to 100 V MOSFETs in Power-SO8

New Trench 6 MOSFETs in a
Power-SO8 package
25 V to 100 V MOSFETs in Power-SO8
We’ve extended our range of Trench 6 MOSFETs with new devices at 60 V and 100 V
in the LFPAK (SOT669) package.
NXP leads the way with its range of Trench 6 MOSFETs in
LFPAK (Loss Free PAcKage). By combining Trench 6 silicon
with the high performance LFPAK package, our new devices
provide customers with numerous performance and reliability
advantages.
Trench 6 silicon technology provides NXP’s lowest RDS(ON)
performance yet. These latest devices are ideal for a wide
u3
.6 mΩ (typical) 60 V in a Power-SO8 footprint
(PSMN5R5-60YS)
As well as delivering lower RDS(ON) than previous silicon
technologies, Trench 6 also offers lower gate-charge (Qg)
and low gate resistance (Rg), making the devices suitable for
high-efficiency power management applications with switching
frequencies up to 1 MHz.
u1
0.0 mΩ (typical) 100 V in a Power-SO8 footprint
(PSMN012-100YS)
uWorld’s first <1 mΩ (1) 25 V MOSFET in a Power-SO8 footprint
for switching applications
uThe only Power-SO8 devices rated to 175 °C
uThe only Power-SO8 package automotive rated
to AEC - Q101
uThe LFPAK is rated for ID(MAX) up to 100 A
uFully compatible with visual inspection machines
(unlike many Power-SO8 alternatives which require X-ray
inspection)
uAvalanche rated
range of demanding applications including power
OR-ing, motor control and high-efficiency synchronous
buck-regulators.
NXP’s LFPAK delivers compact power in a surface mount
package. It provides superior electrical and thermal resistance
as well as low package inductance, while maintaining the
widely accepted SO8 PCB footprint.
Suitable for ‘automated optical inspection’ and ‘manual
inspection’, LFPAK is better than many other Power-SO8
alternatives which require costly X-ray inspection.
uROHS compliant and halogen-free
(1)
PSMN1R2-25YL has RDS(ON) (typ) = 0.9 mΩ and
RDS(ON) (max) = 1.2 mΩ at Vgs=10 V
The combination of Trench 6 silicon and LFPAK package
delivers higher operating efficiencies, improved current
characteristics, higher power density and improved PCB
thermal performance – essential for today’s high performance
power management applications.
Synchronous Buck Regulator
OR-ing
Vin
Power supply ''n+1''
D1
CBoot
Q1
Cin
PWM
and
Gate
Drive
IC
Control IC
L1
Common
Voltage
Rail
Vout
Power supply ''n''
Cout
Q2
Control IC
brb294
brb292
Selector Guide
Type
PSMN1R2-25YL
PSMN1R5-25YL
PSMN1R3-30YL
PSMN1R7-30YL
PSMN2R0-30YL
PSMN2R5-30YL
PSMN3R0-30YL
PSMN3R5-30YL
PSMN4R0-30YL
PSMN5R0-30YL
PSMN6R0-30YL
PSMN7R0-30YL
PSMN9R0-30YL
PSMN2R6-40YS
PSMN4R0-40YS
PSMN8R3-40YS
PSMN012-60YS
PSMN5R5-60YS
PSMN8R5-60YS
PSMN013-80YS
PSMN026-80YS
PSMN8R2-80YS
PSMN012-100YS
PSMN020-100YS
VDS
25
25
30
30
30
30
30
30
30
30
30
30
30
40
40
40
60
60
60
80
80
80
100
100
RDS(ON) (typ)
RDS(ON) (max)
Vgs = 10 V
Vgs = 10 V
mΩΩ
mΩΩ
0.9
1.1
1.04
1.29
1.6
1.8
2.19
2.4
2.72
3.63
4.26
4.92
6.16
2
3.2
6.6
8
3.6
5.6
9.7
20
5.8
10
15
1.2
1.5
1.3
1.7
2
2.4
3
3.5
4
5
6
7
8
2.8
4.2
8.6
11.1
5.2
8
12.9
27.5
8.5
12.8
20.5
Types in Bold Red represent new products
www.nxp.com/mosfets
www.nxp.com
© 2010 NXP B.V.
All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
Date of release: January 2010
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and
Document order number : 9397 750 16849
reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use.
Printed in the Netherlands
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