New Trench 6 MOSFETs in a Power-SO8 package 25 V to 100 V MOSFETs in Power-SO8 We’ve extended our range of Trench 6 MOSFETs with new devices at 60 V and 100 V in the LFPAK (SOT669) package. NXP leads the way with its range of Trench 6 MOSFETs in LFPAK (Loss Free PAcKage). By combining Trench 6 silicon with the high performance LFPAK package, our new devices provide customers with numerous performance and reliability advantages. Trench 6 silicon technology provides NXP’s lowest RDS(ON) performance yet. These latest devices are ideal for a wide u3 .6 mΩ (typical) 60 V in a Power-SO8 footprint (PSMN5R5-60YS) As well as delivering lower RDS(ON) than previous silicon technologies, Trench 6 also offers lower gate-charge (Qg) and low gate resistance (Rg), making the devices suitable for high-efficiency power management applications with switching frequencies up to 1 MHz. u1 0.0 mΩ (typical) 100 V in a Power-SO8 footprint (PSMN012-100YS) uWorld’s first <1 mΩ (1) 25 V MOSFET in a Power-SO8 footprint for switching applications uThe only Power-SO8 devices rated to 175 °C uThe only Power-SO8 package automotive rated to AEC - Q101 uThe LFPAK is rated for ID(MAX) up to 100 A uFully compatible with visual inspection machines (unlike many Power-SO8 alternatives which require X-ray inspection) uAvalanche rated range of demanding applications including power OR-ing, motor control and high-efficiency synchronous buck-regulators. NXP’s LFPAK delivers compact power in a surface mount package. It provides superior electrical and thermal resistance as well as low package inductance, while maintaining the widely accepted SO8 PCB footprint. Suitable for ‘automated optical inspection’ and ‘manual inspection’, LFPAK is better than many other Power-SO8 alternatives which require costly X-ray inspection. uROHS compliant and halogen-free (1) PSMN1R2-25YL has RDS(ON) (typ) = 0.9 mΩ and RDS(ON) (max) = 1.2 mΩ at Vgs=10 V The combination of Trench 6 silicon and LFPAK package delivers higher operating efficiencies, improved current characteristics, higher power density and improved PCB thermal performance – essential for today’s high performance power management applications. Synchronous Buck Regulator OR-ing Vin Power supply ''n+1'' D1 CBoot Q1 Cin PWM and Gate Drive IC Control IC L1 Common Voltage Rail Vout Power supply ''n'' Cout Q2 Control IC brb294 brb292 Selector Guide Type PSMN1R2-25YL PSMN1R5-25YL PSMN1R3-30YL PSMN1R7-30YL PSMN2R0-30YL PSMN2R5-30YL PSMN3R0-30YL PSMN3R5-30YL PSMN4R0-30YL PSMN5R0-30YL PSMN6R0-30YL PSMN7R0-30YL PSMN9R0-30YL PSMN2R6-40YS PSMN4R0-40YS PSMN8R3-40YS PSMN012-60YS PSMN5R5-60YS PSMN8R5-60YS PSMN013-80YS PSMN026-80YS PSMN8R2-80YS PSMN012-100YS PSMN020-100YS VDS 25 25 30 30 30 30 30 30 30 30 30 30 30 40 40 40 60 60 60 80 80 80 100 100 RDS(ON) (typ) RDS(ON) (max) Vgs = 10 V Vgs = 10 V mΩΩ mΩΩ 0.9 1.1 1.04 1.29 1.6 1.8 2.19 2.4 2.72 3.63 4.26 4.92 6.16 2 3.2 6.6 8 3.6 5.6 9.7 20 5.8 10 15 1.2 1.5 1.3 1.7 2 2.4 3 3.5 4 5 6 7 8 2.8 4.2 8.6 11.1 5.2 8 12.9 27.5 8.5 12.8 20.5 Types in Bold Red represent new products www.nxp.com/mosfets www.nxp.com © 2010 NXP B.V. All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. Date of release: January 2010 The information presented in this document does not form part of any quotation or contract, is believed to be accurate and Document order number : 9397 750 16849 reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Printed in the Netherlands Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.