NXP power switching MOSFETs in compact QFN3333 package Smaller. Faster. Cooler. 30 V Trench 6 MOSFETs in 3.3 x 3.3 mm QFN package A new range of 30 V Trench 6 MOSFETs in QFN3333 (SOT873) package NXP now offers a range of high-performance, 30 V, logic-level MOSFETs in QFN3333 package. Measuring only 3.3 mm x 3.3 mm x 1 mm, the devices share the same great switching performance as our Trench-6 LFPAK types but with a 60% smaller footprint. They are ideal for space-constrained designs and high-efficiency power switching applications. Key benefits } High efficiencies in power switching applications due to the optimized RDSon and gate charge (Qg) characteristics of Trench-6 technology } Fast switching - optimized for higher switching frequencies, typically up to 500 KHz } 1 mm package height for low-profile applications } Solder die-attach provides superior thermal performance - Rth(j-mb) } Reduced switching spikes } Avalanche rated and 100% factory tested to ensure high reliability in your application Key features } 30 V devices from 2.9 mΩ(typ) PSMN3R5-30LL to 15 mΩ(typ) PSMN017-30LL } Rated for ID(MAX) up to 40 A } Logic-level GATE threshold voltage } Rugged +/-20 V GATE rating } Devices rated to 150 °C } ROHS compliant and halogen-free Key applications } DC:DC converters – Point-of-Load modules } Battery protection – Li-Ion battery packs } Load switching } Power ORing } Voltage regulator modules (VRMs) NXP already leads the way with its range of Trench 6 MOSFETs in LFPAK (Loss Free PAcKage). By combining the same great Trench 6 technology with the high performance QFN3333 package, our new 30 V devices are perfect for a wide range of space constrained power switching designs. The low RDSon types use a solder die-attach and provide low thermal resistance and high reliability, ideal for the most demanding applications. Typical applications include synchronous buck converters, DC-DC applications, battery protection, load switching and power-ORing. NXP QFN3333 Synchronous-buck evaluation PCB shows efficiency gains and reduced spiking when compared to equivalent LFPAK types. NXP QFN3333 Synchronous-buck evaluation PCB Vin D1 CBoot Q1 Cin PWM and Gate Drive IC L1 Vout Cout Q2 brb292 Synchronous-buck regulator The following graph and table compares the efficiency curve of the NXP 3.5 mΩ PSMN3R5-30LL and the leading competitor’s 3.5 mΩ equivalent part. The Efficiency curves are measured on NXP’s QFN3333 Synchronous-buck evaluation PCB and the MOSFETs are arranged in a 1-high & 1-low configuration. The results show that the NXP part achieves approx 1.1% better average efficiency and 1.2% better peak efficiency compared to the leading competitor’s 3.5 mΩ part. Efficiencies @ Vin: 12V Vout: 1.2V Frequency: 220KHz Efficiency % 85% 80% NXP PSMN3R5-30LL Competitor’s 3.5mR QFN part 75% 70% 0 2 4 6 8 10 12 14 16 Output Current (A) MOSFET type Average efficiency % Peak efficiency % Rdson Max Vg=10 V PSMN3R5-30LL 80.5% 82.8% 3.55 mΩ 2.9 mΩ 37 nC Competitor 3.5 mΩ 79.4% 81.6% 3.5 mΩ 2.9 mΩ 42 nC Rdson Typ Vg=10 V Qg(Tot) Typ @10 V NXP’s space-optimized QFN3333 evaluation PCB demonstrates the usefulness of QFN3333 devices in achieving miniaturized designs. The DC-DC synchronous buck evaluation board, below, measures only 33 mm x 13 mm and delivers a powerful 14 amps output current with 86% peak efficiency (Vin=12 V, Vout=1.2 V, Freq(sw)=500 KHz). With a range of 30 V parts from 3.55 mΩ to 17 mΩ, NXP has the right combination of MOSFETs for your high performance and high efficiency power switching applications. NXP QFN3333 synchronous-buck demonstrator board measuring only 13 mm x 33 mm Type number Package VDS RDSon Max mΩ Vgs=10v RDSon Typ mΩ Vgs=10v Qg(tot) Typ nC Vgs=10v PSMN3R5-30LL QFN3333 30 3.55 2.9 37 PSMN3R8-30LL QFN3333 30 3.7 3 38 PSMN5R8-30LL QFN3333 30 5.8 5 30 PSMN9R0-30LL QFN3333 30 9 8 20.6 PSMN013-30LL QFN3333 30 13 11 12.2 PSMN017-30LL QFN3333 30 17 15 10 PSMN7R0-40LS QFN3333 40 7 - - PSMN014-60LS QFN3333 60 14 - - PSMN023-80LS QFN3333 80 23 - - PSMN035-100LS QFN3333 100 35 - 105 PSMN1R2-25YL LFPAK 25 1.2 0.9 PSMN1R5-25YL LFPAK 25 1.5 1.13 76 PSMN1R3-30YL LFPAK 30 1.3 1.04 100 PSMN1R5-30YL LFPAK 30 1.5 1.29 77.9 PSMN1R6-30YL LFPAK 30 1.6 1.29 77.9 PSMN1R7-30YL LFPAK 30 1.7 1.29 77.9 PSMN2R0-30YL LFPAK 30 2 1.55 64 PSMN2R5-30YL LFPAK 30 2.4 1.79 57 PSMN3R0-30YL LFPAK 30 3 2.19 45.8 PSMN3R5-30YL LFPAK 30 3.5 2.43 41 PSMN4R0-30YL LFPAK 30 4 2.72 36.6 29 PSMN5R0-30YL LFPAK 30 5 3.63 PSMN6R0-30YL LFPAK 30 6 4.26 24 PSMN7R0-30YL LFPAK 30 7 4.92 22 PSMN9R0-30YL LFPAK 30 8 6.16 17.8 PSMN2R6-40YS LFPAK 40 2.8 2 63 PSMN3R3-40YS LFPAK 40 3.3 2.6 49 PSMN4R0-40YS LFPAK 40 4.2 3.2 38 PSMN5R8-40YS LFPAK 40 5.7 4.4 28.8 PSMN8R3-40YS LFPAK 40 8.6 6.6 20 PSMN014-40YS LFPAK 40 14 11 12 PSMN5R5-60YS LFPAK 60 5.2 3.6 56 45 PSMN7R0-60YS LFPAK 60 6.4 4.95 PSMN8R5-60YS LFPAK 60 8 5.6 39 PSMN012-60YS LFPAK 60 11.1 8 28.4 20 PSMN017-60YS LFPAK 60 15.7 12.3 PSMN030-60YS LFPAK 60 24.7 19.1 13 PSMN8R2-80YS LFPAK 80 8.5 5.8 56 PSMN011-80YS LFPAK 80 11 8 45 PSMN013-80YS LFPAK 80 12.9 9.7 37 PSMN018-80YS LFPAK 80 18 - - PSMN026-80YS LFPAK 80 27.5 20 20 PSMN045-80YS LFPAK 80 45 37 12.5 PSMN012-100YS LFPAK 100 12.8 10 64 PSMN016-100YS LFPAK 100 16.3 12.7 54 PSMN020-100YS LFPAK 100 20.5 15 41 PSMN028-100YS LFPAK 100 27.5 21.4 33 PSMN039-100YS LFPAK 100 39.5 30.8 23 PSMN069-100YS LFPAK 100 69 - - PSMN1R6-30PL TO-220 30 1.7 1.4 212 PSMN1R8-30PL TO-220 30 1.8 1.5 170 PSMN2R0-30PL TO-220 30 2.1 1.7 117 PSMN2R7-30PL TO-220 30 2.7 2.3 32 PSMN3R4-30PL TO-220 30 3.4 - - PSMN4R3-30PL TO-220 30 4.3 3.5 41.5 PSMN022-30PL TO-220 30 22 - - Types in bold red represent new products Types in red italic underline are planned for release in Q2-2010 RDSon Max mΩ Vgs=10v RDSon Typ mΩ Vgs=10v Qg(tot) Typ nC Vgs=10v 40 2.1 1.75 130 40 2.8 - - TO-220 40 4.6 3.9 42.3 PSMN8R0-40PS TO-220 40 7.6 6.2 21 PSMN3R0-60PS TO-220 60 3 2.4 130 PSMN4R6-60PS TO-220 60 4.6 3.5 70.8 PSMN7R6-60PS TO-220 60 7.8 6.8 39 PSMN015-60PS TO-220 60 14.8 12.6 20.9 Type number Package VDS PSMN2R2-40PS TO-220 PSMN2R8-40PS TO-220 PSMN4R5-40PS PSMN4R4-80PS TO-220 80 4.1 3.3 125 PSMN5R0-80PS TO-220 80 4.7 3.7 101 PSMN6R5-80PS TO-220 80 6.5 - - PSMN8R7-80PS TO-220 80 8.7 - - PSMN012-80PS TO-220 80 11 9 43 PSMN017-80PS TO-220 80 17 - - PSMN050-80PS TO-220 80 51 37 11 PSMN5R6-100PS TO-220 100 5.6 4.3 141 PSMN7R0-100PS TO-220 100 6.8 5.2 125 PSMN9R5-100PS TO-220 100 9.6 8.16 82 PSMN013-100PS TO-220 100 13.9 11 59 PSMN016-100PS TO-220 100 16 13 49 PSMN027-100PS TO-220 100 26.8 21 30 PSMN034-100PS TO-220 100 34.5 29.3 23.8 PSMN7R0-100ES I2PAK 100 6.8 5.4 125 PSMN013-100ES I2PAK 100 13.9 11 59 Types in bold red represent new products Types in red italic underline are planned for release in Q2-2010 Part numbering for NXP Trench 6 MOSFETs p s m MOSFET Brand name Power Silicon Max n 1 r 7 - 3 0 y s MOSFET type N -ch or P -ch MOSFET on resistance RDSon - MOSFET voltage BVDSS Package type Gate threshold voltage N = N -ch R95 = 0.95 mΩ - 25 = 25 V B = D2PAK SOT404 X = Extremely low P = P -ch 1R7 = 1.7 mΩ - 30 = 30 V D = D2PAK SOT428 L = logic level X = Dual N -ch 014 = 14 mΩ - 40 = 40 V E = I2PAK SOT226 S = standard level X = Dual P -ch 125 = 125 mΩ - 60 = 60 V K = SO8 SOT96 - 80 = 80 V L = QFN3333 SOT873 - 100 = 100 V P = TO220 SOT78 - 110 = 110 V Y = LFPAK SOT669 & SOT1023 Z = N -ch + P -ch www.nxp.com ©2010 NXP B.V. All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: May 2010 Document order number: 9397 750 16926 Printed in the Netherlands