PD - 95788B IRG4BC40WSPbF IRG4BC40WLPbF INSULATED GATE BIPOLAR TRANSISTOR Features Designed expressly for Switch-Mode Power Supply and PFC (power factor correction) applications Industry-benchmark switching losses improve efficiency of all power supply topologies 50% reduction of Eoff parameter Low IGBT conduction losses Latest-generation IGBT design and construction offers tighter parameters distribution, exceptional reliability Lead-Free C VCES = 600V VCE(on) typ. = 2.05V G @VGE = 15V, IC = 20A E n-channel Benefits Lower switching losses allow more cost-effective operation than power MOSFETs up to 150 kHz ("hard switched" mode) Of particular benefit to single-ended converters and boost PFC topologies 150W and higher Low conduction losses and minimal minority-carrier recombination make these an excellent option for resonant mode switching as well (up to >>300 kHz) D2 Pak IRG4BC40WSPbF TO-262 IRG4BC40WLPbF Absolute Maximum Ratings VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM VGE EARV PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Parameter Max. Units Collector-to-Emitter Breakdown Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Gate-to-Emitter Voltage Reverse Voltage Avalanche Energy Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds 600 40 20 160 160 ± 20 160 160 65 -55 to + 150 V A V mJ W 300 (0.063 in. (1.6mm) from case ) °C Thermal Resistance Parameter RθJC RθCS RθJA Wt www.irf.com Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient (PCB Mounted steady-state) Weight Typ. Max. 0.5 2.0 (0.07) 0.77 40 Units °C/W g (oz) 1 02/19/10 IRG4BC40WS/LPbF Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V(BR)CES V(BR)ECS ∆V(BR)CES/∆TJ VCE(ON) VGE(th) ∆VGE(th)/∆TJ gfe ICES IGES Parameter Min. Typ. Max. Units Conditions Collector-to-Emitter Breakdown Voltage 600 V VGE = 0V, IC = 250µA Emitter-to-Collector Breakdown Voltage 18 V VGE = 0V, IC = 1.0A Temperature Coeff. of Breakdown Voltage 0.44 V/°C VGE = 0V, IC = 1.0mA 2.05 2.5 IC = 20A VGE = 15V Collector-to-Emitter Saturation Voltage 2.36 IC = 40A See Fig.2, 5 V 1.90 IC = 20A , TJ = 150°C Gate Threshold Voltage 3.0 6.0 VCE = VGE, IC = 250µA Temperature Coeff. of Threshold Voltage 13 mV/°C VCE = VGE, IC = 250µA Forward Transconductance 18 28 S VCE = 100 V, IC =20A 250 VGE = 0V, VCE = 600V Zero Gate Voltage Collector Current µA 2.0 VGE = 0V, VCE = 10V, TJ = 25°C 2500 VGE = 0V, VCE = 600V, TJ = 150°C Gate-to-Emitter Leakage Current ±100 nA VGE = ±20V Switching Characteristics @ TJ = 25°C (unless otherwise specified) Qg Qge Qgc t d(on) tr td(off) tf Eon Eoff E ts td(on) tr t d(off) tf E ts LE Cies Coes Cres Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. Typ. 98 12 36 27 22 100 74 0.11 0.23 0.34 25 23 170 124 0.85 7.5 1900 140 35 Max. Units Conditions 147 IC =20A 18 nC VCC = 400V See Fig.8 54 VGE = 15V TJ = 25°C ns 150 IC = 20A, VCC = 480V 110 VGE = 15V, RG = 10Ω Energy losses include "tail" mJ See Fig. 9,10, 14 0.45 TJ = 150°C, IC = 20A, VCC = 480V ns VGE = 15V, RG = 10Ω Energy losses include "tail" mJ See Fig. 10,11, 14 nH Measured 5mm from package VGE = 0V pF VCC = 30V See Fig. 7 = 1.0MHz Notes: Repetitive rating; VGE = 20V, pulse width limited by max. junction temperature. ( See fig. 13b ) VCC = 80%(VCES), VGE = 20V, L = 10µH, RG = 10Ω, (See fig. 13a) Pulse width ≤ 80µs; duty factor ≤ 0.1%. Pulse width 5.0µs, single shot. Repetitive rating; pulse width limited by maximum junction temperature. 2 www.irf.com IRG4BC40WS/LPbF 50 For both: 40 Load Current ( A ) Triangular wave: Duty cycle: 50% TJ = 125°C Tsink = 90°C Gate drive as specified Power Dissipation = 28W Clamp voltage: 80% of rated 30 Square wave: 60% of rated voltage 20 10 Ideal diodes A 0 0.1 1 10 100 1000 f, Frequency (kHz) Fig. 1 - Typical Load Current vs. Frequency (Load Current = IRMS of fundamental) 1000 TJ = 25 ° C 100 I C , Collector-to-Emitter Current (A) I C , Collector-to-Emitter Current (A) 1000 100 TJ = 150 °C 10 V GE = 15V 80µs PULSE WIDTH 1 1.0 2.0 3.0 4.0 VCE , Collector-to-Emitter Voltage (V) Fig. 2 - Typical Output Characteristics www.irf.com 5.0 TJ = 150 °C 10 1 TJ = 25 °C V CC = 50V 5µs PULSE WIDTH 5 7 9 11 VGE , Gate-to-Emitter Voltage (V) Fig. 3 - Typical Transfer Characteristics 3 IRG4BC40WS/LPbF 3.0 VCE , Collector-to-Emitter Voltage(V) Maximum DC Collector Current(A) 50 40 30 20 10 0 25 50 75 100 125 150 TC , Case Temperature ( °C) VGE = 15V 80 us PULSE WIDTH IC = 40 A 2.5 IC = 20 A 2.0 IC = 10 A 1.5 1.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature ( ° C) Fig. 4 - Maximum Collector Current vs. Case Temperature Fig. 5 - Typical Collector-to-Emitter Voltage vs. Junction Temperature Thermal Response (Z thJC ) 1 D = 0.50 0.20 0.1 0.10 PDM 0.05 t1 0.02 0.01 0.01 0.00001 t2 SINGLE PULSE (THERMAL RESPONSE) 0.0001 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = PDM x Z thJC + TC 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 www.irf.com IRG4BC40WS/LPbF VGE = 0V, f = 1MHz Cies = Cge + Cgc , Cce SHORTED Cres = Cgc Coes = Cce + Cgc 3000 Cies 2000 Coes 1000 0 Cres 1 10 20 VGE , Gate-to-Emitter Voltage (V) C, Capacitance (pF) 4000 16 12 8 4 0 100 VCE , Collector-to-Emitter Voltage (V) Total Switching Losses (mJ) Total Switching Losses (mJ) 10 V CC = 480V V GE = 15V 0.9 TJ = 25 °C I C = 20A 0.8 0.7 0.6 0.5 0.4 20 30 40 50 RG , Gate Resistance (Ω) (Ohm) Fig. 9 - Typical Switching Losses vs. Gate Resistance www.irf.com 20 40 60 80 100 Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage 1.0 10 0 QG , Total Gate Charge (nC) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage 0.3 VCC = 400V I C = 20A 60 RG = 10 10Ohm Ω VGE = 15V VCC = 480V IC = 40 A 1 IC = 20 A IC = 10 A 0.1 -60 -40 -20 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature ( °C ) Fig. 10 - Typical Switching Losses vs. Junction Temperature 5 IRG4BC40WS/LPbF RG TJ VCC VGE 1000 Ω = 10 10Ohm = 150 ° C = 480V = 15V I C , Collector-to-Emitter Current (A) Total Switching Losses (mJ) 2.0 1.5 1.0 100 0.5 0.0 5 15 25 35 I C , Collector-to-emitter Current (A) Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current 6 VGE = 20V T J = 125 oC 45 10 SAFE OPERATING AREA 1 10 100 1000 VCE , Collector-to-Emitter Voltage (V) Fig. 12 - Turn-Off SOA www.irf.com IRG4BC40WS/LPbF RL = VCC ICM L D.U.T. VC * 50V 1000V 0 - VCC c 480µF d * Driver same type as D.U.T.; Vc = 80% of Vce(max) * Note: Due to the 50V power supply, pulse width and inductor will increase to obtain rated Id. Pulsed Collector Current Test Circuit Fig. 13a - Clamped Inductive Fig. 13b - Pulsed Collector Load Test Circuit Current Test Circuit IC L Driver* D.U.T. VC Test Circuit 50V 1000V c Fig. 14a - Switching Loss d e * Driver same type as D.U.T., VC = 480V c d 90% e VC 10% 90% Fig. 14b - Switching Loss t d(off) 10% I C 5% Waveforms tf tr t d(on) t=5µs E on E off E ts = (Eon +Eoff ) www.irf.com 7 IRG4BC40WS/LPbF D2Pak Package Outline Dimensions are shown in millimeters (inches) D2Pak Part Marking Information 7+,6,6$1,5)6:,7+ /27&2'( $66(0%/('21:: ,17+($66(0%/</,1(/ 1RWH3LQDVVHPEO\OLQH SRVLWLRQLQGLFDWHV/HDG)UHH OR ,17(51$7,21$/ 5(&7,),(5 /2*2 3$57180%(5 )6 '$7(&2'( <($5 :((. /,1(/ $66(0%/< /27&2'( ,17(51$7,21$/ 5(&7,),(5 /2*2 $66(0%/< /27&2'( 3$57180%(5 )6 '$7(&2'( 3 '(6,*1$7(6/($')5(( 352'8&7237,21$/ <($5 :((. $ $66(0%/<6,7(&2'( Note: For the most current drawing please refer to IR website at http://www.irf.com/package/pkigbt.html 8 www.irf.com IRG4BC40WS/LPbF TO-262 Package Outline Dimensions are shown in millimeters (inches) TO-262 Part Marking Information (;$03/( 7+,6,6$1,5// /27&2'( $66(0%/('21:: ,17+($66(0%/</,1(& 1RWH3LQDVVHPEO\OLQH SRVLWLRQLQGLFDWHV/HDG)UHH ,17(51$7,21$/ 5(&7,),(5 /2*2 $66(0%/< /27&2'( 3$57180%(5 '$7(&2'( <($5 :((. /,1(& OR ,17(51$7,21$/ 5(&7,),(5 /2*2 $66(0%/< /27&2'( 3$57180%(5 '$7(&2'( 3 '(6,*1$7(6/($')5(( 352'8&7237,21$/ <($5 :((. $ $66(0%/<6,7(&2'( Note: For the most current drawing please refer to IR website at http://www.irf.com/package/pkigbt.html www.irf.com 9 IRG4BC40WS/LPbF D2Pak Tape & Reel Information Dimensions are shown in millimeters (inches) TRR 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) FEED DIRECTION 1.85 (.073) 1.65 (.065) 1.60 (.063) 1.50 (.059) 11.60 (.457) 11.40 (.449) 0.368 (.0145) 0.342 (.0135) 15.42 (.609) 15.22 (.601) 24.30 (.957) 23.90 (.941) TRL 10.90 (.429) 10.70 (.421) 1.75 (.069) 1.25 (.049) 4.72 (.136) 4.52 (.178) 16.10 (.634) 15.90 (.626) FEED DIRECTION 13.50 (.532) 12.80 (.504) 27.40 (1.079) 23.90 (.941) 4 330.00 (14.173) MAX. NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE. 60.00 (2.362) MIN. 30.40 (1.197) MAX. 26.40 (1.039) 24.40 (.961) 3 4 Note: For the most current drawing please refer to IR website at http://www.irf.com/package/pkigbt.html IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 02/2010 10 www.irf.com