PD - 97289
IRG4PC20UPbF
UltraFast Speed IGBT
PROVISIONAL
INSULATED GATE BIPOLAR TRANSISTOR
C
Features
VCES = 600V
UltraFast: optimized for high operating
frequencies 8-40 kHz in hard switching, >200
kHz in resonant mode
Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
Generation 3
Industry standard TO-247AC package
Lead-Free
VCE(on) typ. = 1.85V
G
@VGE = 15V, IC = 6.5A
E
n-channel
Benefits
C
Generation 4 IGBTs offer highest efficiency available
IGBTs optimized for specified application conditions
Designed to be a "drop-in" replacement for equivalent
industry-standard Generation 3 IR IGBTs
E
C
G
TO-247AC
G
Gate
C
Collector
E
Emitter
Absolute Maximum Ratings
Parameter
VCES
IC @ TC = 25°C
Collector-toEmitter Breakdown Voltage
Continuous Collector Current, VGE @ 15V
IC @ TC = 100°C
ICM
Continuous Collector, VGE @ 15V
ILM
VGE
EARV
Clamped Inductive Load Current
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy
PD @TC = 25°C
PD @TC = 100°C
Power Dissipation
Power Dissipation
TJ
TSTG
Operating Junction and
Storage Temperature Range
Soldering Temperature for 10 seconds
Pulsed Collector Current
c
Units
600
V
A
13
6.5
52
52
±20
d
e
Mounting Torque, 6-32 or M3 Screw
Max.
V
mJ
5.0
60
W
24
-55 to + 150
°C
300 (0.063 in.) (1.6mm from case)
10lb in (1.1N m)
x
x
N
Thermal Resistance
Parameter
RθJC
RθCS
RθJA
Wt
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient, typical socket mount
Weight
Typ.
Max.
–––
0.24
–––
6.0 (0.21)
2.1
–––
40
–––
Units
°C/W
g (oz)
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1
07/11/07
PROVISIONAL
IRG4PC20UPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
V(BR)CES
V(BR)ECS
Min.
Typ. Max. Units
600
18
–––
–––
–––
–––
–––
0.69
–––
Collector-to-Emitter Breakdown Voltage
Emitter-to-Collector Breakdown Voltage
∆V(BR)CES/∆TJ Breakdown Voltage Temp. Coefficient
f
–––
VCE(on)
Collector-to-Emitter Saturation Voltage
VGE(th)
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
∆VGE(th)/∆TJ
gfe
ICES
IGES
Forward Transconductance
g
Collector-to-Emitter Leakage Current
Gate-to-Emitter Forward Leakage
Gate-to-Emitter Reverse Leakage
1.85
2.1
2.27
–––
–––
1.87
–––
3.0
–––
–––
-11
6.0
–––
1.4
4.3
–––
–––
–––
250
–––
–––
2.0
–––
–––
1000
–––
–––
–––
–––
100
-100
Conditions
V
V
VGE = 0V, ICE = 250µA
V
VGE = 15V, ICE = 13A
VGE = 0V, ICE = 1.0A
V/°C VGE = 0V, ICE = 1.0mA
VGE = 15V, ICE = 6.5A
VGE = 15V, ICE = 6.5A, TJ = 150°C
VCE = VGE, ICE = 250µA
V
mV/°C
VCE = 100V, ICE = 6.5A
S
µA
VCE = 600V, VGE = 0V
VCE = 10V, VGE = 0V, TJ = 25°C
VCE = 600V, VGE = 0V, TJ = 150°C
nA
VGE = 20V
VGE = -20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Total Gate Charge (turn-on)
–––
27
41
Qge
Qgc
Gate-to-Emitter Charge (turn-on)
–––
4.5
6.8
td(on)
Gate-to-Collector Charge
Turn-On delay time
–––
–––
10
21
16
–––
tr
Rise time
–––
13
–––
td(off)
Turn-Off delay time
–––
86
130
tf
Fall time
–––
120
180
E(on)
Turn-On Switching Loss
–––
0.10
–––
E(off)
Ets
Turn-Off Switching Loss
Total Switching Loss
–––
–––
0.12
0.22
–––
0.4
td(on)
Turn-On delay time
–––
20
–––
tr
Rise time
–––
14
–––
td(off)
Turn-Off delay time
–––
190
–––
tf
Fall time
–––
140
–––
Ets
LE
Total Switching Loss
Internal Emitter Inductance
–––
–––
0.42
7.5
–––
–––
Cies
Input Capacitance
–––
530
–––
Coes
Output Capacitance
–––
39
–––
Cres
Reverse Transfer Capacitance
–––
7.4
–––
Notes:
Repetitive rating; VGE = 20V, pulse width limited by
max. junction temperature.
VCC = 80%(VCES), VGE = 20V, L = 10µH, RG = 50Ω.
Repetitive rating; pulse width limited by maximum
junction temperature.
2
VCE = 400V
nC
IC = 6.5A
e
VGE = 15V
ns
IC = 6.5A, VCC = 480V
VGE = 15V, RG = 50Ω
TJ = 25°C
Energy losses include "tail"
mJ
IC = 6.5A, VCC = 480V
ns
VGE = 15V, RG = 50Ω
TJ = 150°C
Energy losses include "tail"
mJ
nH
pF
Measured 5mm from package
VGE = 0V
VCE = 30V
ƒ = 1.0MHz
Pulse width ≤ 80µs; duty factor ≤ 0.1%.
Pulse width 5.0µs, single shot.
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PROVISIONAL
IRG4PC20UPbF
25
For both:
Triangular wave:
Duty cycle: 50%
TJ = 125°C
Tsink = 90°C
Gate drive as specified
20
I
Load Current ( A )
Power Dissipation = 13W
Clamp voltage:
80% of rated
15
Square wave:
60% of rated
voltage
10
I
5
Ideal diodes
A
0
0.1
1
10
100
f, Frequency (kHz)
Fig. 1 - Typical Load Current vs. Frequency
(For square wave, I=IRMS of fundamental; for triangular wave, I=IPK)
100
TJ = 25°C
TJ = 150°C
10
1
VGE = 15V
20µs PULSE WIDTH
0.1
0.1
1
10
IC , Collector-to-Emitter Current (A)
IC , Collector-to-Emitter Current (A)
100
TJ = 150°C
10
TJ = 25°C
1
V CC = 10V
5µs PULSE WIDTH A
0.1
4
6
8
10
VCE , Collector-to-Emitter Voltage (V)
VGE , Gate-to-Emitter Voltage (V)
Fig. 2 - Typical Output Characteristics
Fig. 3 - Typical Transfer Characteristics
12
A
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3
PROVISIONAL
IRG4PC20UPbF
VGE = 15V
12
10
8
6
4
2
2.6
VCE , Collector-to-Emitter Voltage (V)
Maximum DC Collector Current (A)
14
0
25
50
75
100
125
VGE = 15V
80µs PULSE WIDTH
IC = 13A
2.2
1.8
IC = 6.5A
1.4
I C = 3.3A
A
1.0
150
-60
TC , Case Temperature (°C)
-40
-20
0
20
40
60
80
100 120 140 160
TJ , Junction Temperature (°C)
Fig. 4 - Maximum Collector Current vs. Case
Temperature
Fig. 5 - Collector-to-Emitter Voltage vs.
Junction Temperature
Thermal Response (Z thJC )
10
1
D = 0.50
0.20
0.10
PDM
0.05
0.1
0.02
0.01
t
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D = t
0.01
0.00001
1
/t
1
t2
2
2. Peak TJ = P DM x Z thJC + T C
0.0001
0.001
0.01
0.1
1
10
t 1 , Rectangular Pulse Duration (sec)
Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
4
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PROVISIONAL
IRG4PC20UPbF
800
Cies
20
V GE = 0V,
f = 1MHz
C ies = C ge + C gc , Cce SHORTED
C res = C gc
C oes = C ce + C gc
VGE , Gate-to-Emitter Voltage (V)
C, Capacitance (pF)
1000
600
Coes
400
Cres
200
A
0
1
10
100
VCE, Collector-to-Emitter Voltage (V)
Total Switching Losses (mJ)
VCC
VGE
TJ
IC
16
12
8
4
A
0
0
5
10
15
20
25
30
Qg , Total Gate Charge (nC)
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
0.23
VCE = 400V
I C = 6.5A
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
= 480V
= 15V
= 25°C
= 6.5A
0.22
0.21
A
0.20
0
10
20
30
40
50
60
R G , Gate Resistance (Ω)
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
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Fig. 10 - Typical Switching Losses vs.
Junction Temperature
5
PROVISIONAL
IRG4PC20UPbF
RG
TJ
V CC
V GE
0.8
1000
= 50 Ω
= 150°C
= 480V
= 15V
I C , Collector-to-Emitter Current (A)
Total Switching Losses (mJ)
1.0
0.6
0.4
0.2
A
0.0
0
2
4
6
8
10
12
I C , Collector-to-Emitter Current (A)
Fig. 11 - Typical Switching Losses vs.
Collector-to-Emitter Current
6
14
VGE
= 20V
GE
TJ = 125°C
100
SAFE OPERATING AREA
10
1
0.1
1
10
100
1000
VCE , Collector-to-Emitter Voltage (V)
Fig. 12 - Turn-Off SOA
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PROVISIONAL
IRG4PC20UPbF
L
D.U.T.
VC *
50V
RL =
0 - 480V
1000V
c
480V
4 X IC@ 25°C
480µF
960V
d
* Driver same type as D.U.T.; Vc = 80% of Vce(max)
* Note: Due to the 50V power supply, pulse width and inductor
will increase to obtain rated Id.
Fig. 13b - Pulsed Collector
Fig. 13a - Clamped Inductive
Current Test Circuit
Load Test Circuit
IC
L
Driver*
D.U.T.
VC
Loss Test Circuit
50V
1000V
c
Fig. 14a - Switching
d
e
* Driver same type
as D.U.T., VC = 480V
c
d
90%
e
VC
10%
90%
Fig. 14b - Switching Loss
t d(off)
10%
I C 5%
Waveforms
tf
tr
t d(on)
t=5µs
E on
E off
E ts = (Eon +Eoff )
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PROVISIONAL
IRG4PC20UPbF
TO-247AC Package Outline
Dimensions are shown in millimeters (inches)
TO-247AC Part Marking Information
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TO-247AC package is not recommended for Surface Mount Application.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
Data and specifications subject to change without notice.
This product has been designed and qualified for Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 07/07
8
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