IRG4BC40K Data Sheet (279 KB, EN)

PD -95174A
IRG4BC40KPbF
Short Circuit Rated
UltraFast IGBT
INSULATED GATE BIPOLAR TRANSISTOR
Features
C
• Short Circuit Rated UltraFast: optimized for high
operating frequencies >5.0KHz , and Short Circuit
Rated to 10µs @ 125°C, VGE = 15V
• Generation 4 IGBT design provides higher efficiency
than Generation 3
• Industry standard TO-247AC package
• Lead-Free
VCES = 600V
VCE(on) typ. = 2.1V
G
@VGE = 15V, IC = 25A
E
n-channel
Benefits
• Generation 4 IGBTs offer highest efficiency available
• IGBTs optimized for specified application conditions
TO-220AB
Absolute Maximum Ratings
Parameter
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
tsc
VGE
EARV
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current 
Clamped Inductive Load Current ‚
Short Circuit Withstand Time
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy ƒ
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting torque, 6-32 or M3 screw.
Max.
Units
600
42
25
84
84
10
±20
15
160
65
-55 to +150
V
A
µs
V
mJ
W
°C
300 (0.063 in. (1.6mm) from case)
10 lbf•in (1.1N•m)
Thermal Resistance
Parameter
RθJC
RθCS
RθJA
Wt
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Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient, typical socket mount
Weight
Typ.
Max.
–––
0.50
–––
2 (0.07)
0.77
–––
80
–––
Units
°C/W
g (oz)
1
02/17/10
IRG4BC40KPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)CES
V(BR)ECS
∆V(BR)CES/∆TJ
VCE(ON)
VGE(th)
∆VGE(th)/∆TJ
gfe
ICES
IGES
Parameter
Min. Typ.
Collector-to-Emitter Breakdown Voltage
600 —
Emitter-to-Collector Breakdown Voltage „ 18
—
Temperature Coeff. of Breakdown Voltage — 0.46
— 2.10
Collector-to-Emitter Saturation Voltage
— 2.70
— 2.14
Gate Threshold Voltage
3.0
—
Temperature Coeff. of Threshold Voltage
—
-13
Forward Transconductance …
7.0
14
—
—
Zero Gate Voltage Collector Current
—
—
—
—
Gate-to-Emitter Leakage Current
—
—
Max. Units
Conditions
—
V
VGE = 0V, IC = 250µA
—
V
VGE = 0V, IC = 1.0A
—
V/°C VGE = 0V, IC = 1.0mA
2.6
IC = 25A
VGE = 15V
—
IC = 42A
See Fig.2, 5
V
—
IC = 25A , TJ = 150°C
6.0
VCE = VGE, IC = 250µA
— mV/°C VCE = VGE, IC = 250µA
—
S
VCE = 100 V, IC = 25A
250
VGE = 0V, VCE = 600V
µA
2.0
VGE = 0V, VCE = 10V, TJ = 25°C
2000
VGE = 0V, VCE = 600V, TJ = 150°C
±100 n A VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Qge
Qgc
t d(on)
tr
td(off)
tf
Eon
Eoff
Ets
t sc
t d(on)
tr
t d(off)
tf
E ts
LE
Cies
Coes
Cres
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Short Circuit Withstand Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
—
—
—
—
—
—
—
—
—
—
10
Typ.
120
16
51
30
15
140
140
0.62
0.33
0.95
—
—
—
—
—
—
—
—
—
—
30
18
190
150
1.9
13
1600
130
55
Max. Units
Conditions
180
IC = 25A
24
nC
VCC = 400V
See Fig.8
77
VGE = 15V
—
—
TJ = 25°C
ns
210
IC = 25A, VCC = 480V
210
VGE = 15V, RG = 10Ω
—
Energy losses include "tail"
—
mJ See Fig. 9,10,14
1.4
—
µs
VCC = 400V, TJ = 125°C
VGE = 15V, RG = 10Ω , VCPK < 500V
—
TJ = 150°C,
—
IC = 25A, VCC = 480V
ns
—
VGE = 15V, RG = 10Ω
—
Energy losses include "tail"
—
mJ See Fig. 11,14
—
nH
Measured 5mm from package
—
VGE = 0V
—
pF
VCC = 30V
See Fig. 7
—
ƒ = 1.0MHz
Notes:
 Repetitive rating; VGE = 20V, pulse width limited by
ƒ Repetitive rating; pulse width limited by maximum
‚ VCC = 80%(VCES), VGE = 20V, L = 10µH, RG = 10Ω,
„ Pulse width ≤ 80µs; duty factor ≤ 0.1%.
max. junction temperature. ( See fig. 13b )
(See fig. 13a)
2
junction temperature.
… Pulse width 5.0µs, single shot.
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IRG4BC40KPbF
50
For both:
Triangular wave:
Duty cycle: 50%
TJ = 125°C
Tsink = 90°C
Gate drive as specified
40
Clamp voltage:
80% of rated
Load Current (A)
Power Dissipation = 28W
30
Square wave:
60% of rated
voltage
20
10
Ideal diodes
A
0
0.1
1
10
100
f, Frequency (kHz)
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)
100
TJ = 150 o C
10
TJ = 25 oC
V GE = 15V
20µs PULSE WIDTH
1
0.1
1
VCE , Collector-to-Emitter Voltage (V)
Fig. 2 - Typical Output Characteristics
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10
IC , Collector-to-Emitter Current (A)
I C , Collector-to-Emitter Current (A)
100
TJ = 150°C
TJ = 25°C
10
V CC = 50V
5µs PULSE WIDTH A
1
5
7
9
11
VGE, Gate-to-Emitter Voltage (V)
Fig. 3 - Typical Transfer Characteristics
3
IRG4BC40KPbF
5.0
VCE , Collector-to-Emitter Voltage(V)
Maximum DC Collector Current(A)
50
40
30
20
10
0
25
50
75
100
125
150
TC , Case Temperature ( ° C)
VGE = 15V
80 us PULSE WIDTH
IC = 50 A
4.0
3.0
IC = 25 A
IC =12.5 A
2.0
1.0
-60 -40 -20
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature ( ° C)
Fig. 4 - Maximum Collector Current vs. Case
Temperature
Fig. 5 - Typical Collector-to-Emitter Voltage
vs. Junction Temperature
Thermal Response (Z thJC )
1
0.50
0.20
0.1
0.10
PDM
0.05
0.02
0.01
0.01
0.00001
t1
t2
SINGLE PULSE
(THERMAL RESPONSE)
0.0001
Notes:
1. Duty factor D = t 1 / t 2
2. Peak TJ = PDM x Z thJC + TC
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
4
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IRG4BC40KPbF
3000
VGE , Gate-to-Emitter Voltage (V)
2500
C, Capacitance (pF)
20
VGE = 0V,
f = 1MHz
Cies = Cge + Cgc , Cce SHORTED
Cres = Cgc
Coes = Cce + Cgc
2000
Cies
1500
1000
500
Coes
Cres
0
1
10
16
12
8
4
0
100
VCE , Collector-to-Emitter Voltage (V)
Total Switching Losses (mJ)
Total Switching Losses (mJ)
10
V CC = 480V
V GE = 15V
TJ = 25 ° C
1.60 I C = 25A
1.40
1.20
1.00
10
20
30
40
RG , Gate Resistance (Ohm)
Ω
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
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20
40
60
80
100
120
140
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
1.80
0
0
QG , Total Gate Charge (nC)
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
0.80
VCC = 400V
I C = 25A
50
RG = 10Ohm
Ω
VGE = 15V
VCC = 480V
IC = 50 A
IC = 25 A
IC = 12.5 A
1
0.1
-60 -40 -20
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature ( °C )
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
5
IRG4BC40KPbF
RG
TJ
VCC
4.0 VGE
1000
= 10Ohm
Ω
= 150 ° C
= 480V
= 15V
I C , Collector-to-Emitter Current (A)
Total Switching Losses (mJ)
5.0
VGE = 20V
T J = 125 oC
100
3.0
2.0
1.0
0.0
0
10
20
30
40
I C , Collector-to-emitter Current (A)
Fig. 11 - Typical Switching Losses vs.
Collector-to-Emitter Current
6
50
10
1
SAFE OPERATING AREA
1
10
100
1000
VCE , Collector-to-Emitter Voltage (V)
Fig. 12 - Turn-Off SOA
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IRG4BC40KPbF
RL = VCC
ICM
L
D.U.T.
VC *
50V
0 - VCC
1000V
c
480µF
d
* Driver same type as D.U.T.; Vc = 80% of Vce(max)
* Note: Due to the 50V power supply, pulse width and inductor
will increase to obtain rated Id.
Pulsed Collector Current
Test Circuit
Fig. 13b - Pulsed Collector
Fig. 13a - Clamped Inductive
Current Test Circuit
Load Test Circuit
IC
L
Driver*
D.U.T.
VC
Test Circuit
50V
1000V
c
Fig. 14a - Switching Loss
d
e
* Driver same type
as D.U.T., VC = 480V
c
d
90%
e
VC
10%
90%
Fig. 14b - Switching Loss
t d(off)
10%
I C 5%
Waveforms
tf
tr
t d(on)
t=5µs
E on
E off
E ts = (Eon +Eoff )
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IRG4BC40KPbF
TO-220AB Package Outline (Dimensions are shown in millimeters (inches))
TO-220AB Part Marking Information
(;$03/( 7+,6,6$1,5)
/27&2'(
$66(0%/('21::
,17+($66(0%/</,1(&
Note: "P" in assembly line
position indicates "Lead-Free"
,17(51$7,21$/
5(&7,),(5
/2*2
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Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 02/2010
8
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