PD -95430 IRG4PC40FPbF Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 Industry standard TO-247AC package Lead-Free VCES = 600V VCE(on) typ. = 1.50V G @VGE = 15V, IC = 27A E n-channel Benefits Generation 4 IGBT's offer highest efficiency available IGBT's optimized for specified application conditions Designed to be a "drop-in" replacement for equivalent industry-standard Generation 3 IR IGBT's TO-247AC Absolute Maximum Ratings VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM VGE EARV PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Parameter Max. Units Collector-to-Emitter Breakdown Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Gate-to-Emitter Voltage Reverse Voltage Avalanche Energy Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw. 600 49 27 200 200 ± 20 15 160 65 -55 to + 150 V A V mJ W 300 (0.063 in. (1.6mm from case ) 10 lbfin (1.1Nm) °C Thermal Resistance Parameter RθJC RθCS RθJA Wt www.irf.com Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient, typical socket mount Weight Typ. Max. 0.24 6 (0.21) 0.77 40 Units °C/W g (oz) 1 06/17/04 IRG4PC40FPbF Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Collector-to-Emitter Breakdown Voltage 600 Emitter-to-Collector Breakdown Voltage 18 ∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage 0.70 1.50 VCE(ON) Collector-to-Emitter Saturation Voltage 1.85 1.56 VGE(th) Gate Threshold Voltage 3.0 ∆V GE(th)/∆TJ Temperature Coeff. of Threshold Voltage -12 gfe Forward Transconductance 9.2 12 ICES Zero Gate Voltage Collector Current IGES Gate-to-Emitter Leakage Current V(BR)CES V(BR)ECS Max. Units Conditions V VGE = 0V, IC = 250µA V VGE = 0V, IC = 1.0A V/°C VGE = 0V, IC = 1.0mA VGE = 15V 1.7 IC = 27A IC = 49A See Fig.2, 5 V IC = 27A , TJ = 150°C 6.0 VCE = VGE, IC = 250µA mV/°C VCE = VGE, IC = 250µA S VCE = 100V, IC = 27A 250 VGE = 0V, VCE = 600V µA 2.0 VGE = 0V, VCE = 10V, TJ = 25°C 1000 VGE = 0V, VCE = 600V, TJ = 150°C ±100 n A VGE = ±20V Switching Characteristics @ TJ = 25°C (unless otherwise specified) Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Ets LE Cies Coes Cres Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. Typ. 100 15 35 26 18 240 170 0.37 1.81 2.18 25 21 380 310 3.9 13 2200 140 29 Max. Units Conditions 150 IC = 27A 23 nC VCC = 400V See Fig. 8 53 VGE = 15V TJ = 25°C ns 360 IC = 27A, VCC = 480V 250 VGE = 15V, RG = 10Ω Energy losses include "tail" mJ See Fig. 10, 11, 13, 14 2.8 TJ = 150°C, IC = 27A, VCC = 480V ns VGE = 15V, RG = 10Ω Energy losses include "tail" mJ See Fig. 13, 14 nH Measured 5mm from package VGE = 0V pF VCC = 30V See Fig. 7 = 1.0MHz Notes: Repetitive rating; VGE = 20V, pulse width limited by max. junction temperature. ( See fig. 13b ) VCC = 80%(VCES), VGE = 20V, L = 10µH, RG = 10Ω, (See fig. 13a) Pulse width ≤ 80µs; duty factor ≤ 0.1%. Pulse width 5.0µs, single shot. Repetitive rating; pulse width limited by maximum junction temperature. 2 www.irf.com IRG4PC40FPbF 80 For both: 60 Load Current (A) Triangular wave: Duty cycle: 50% TJ = 125°C T sink = 90°C Gate drive as specified Clamp voltage: 80% of rated Power Dissipation = 35W Square wave: 40 60% of rated voltage 20 Ideal diodes A 0 0.1 1 10 100 f, Frequency (kHz) Fig. 1 - Typical Load Current vs. Frequency (For square wave, I=IRMS of fundamental; for triangular wave, I=IPK) 1000 IC , Collector-to-Emitter Current (A) IC , Collector-to-Emitter Current (A) 1000 TJ = 25°C 100 TJ = 150°C 10 VGE = 15V 20µs PULSE WIDTH A 1 1 10 VCE , Collector-to-Emitter Voltage (V) Fig. 2 - Typical Output Characteristics www.irf.com 100 TJ = 150°C TJ = 25°C 10 V CC = 50V 5µs PULSE WIDTH A 1 5 6 7 8 9 10 11 12 VGE, Gate-to-Emitter Voltage (V) Fig. 3 - Typical Transfer Characteristics 3 IRG4PC40FPbF 2.5 V GE = 15V VCE , Collector-to-Emitter Voltage (V) Maximum DC Collector Current (A) 50 40 30 20 10 0 VGE = 15V 80µs PULSE WIDTH IC = 54A 2.0 I C = 27A 1.5 I C = 14A A 1.0 25 50 75 100 125 150 -60 TC , Case Temperature (°C) Fig. 4 - Maximum Collector Current vs. Case Temperature -40 -20 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature (°C) Fig. 5 - Typical Collector-to-Emitter Voltage vs. Junction Temperature Thermal Response (Z thJC ) 1 D = 0.50 0.20 0.1 0.10 PDM 0.05 0.02 t SINGLE PULSE (THERMAL RESPONSE) Notes: 1. Duty factor D = t / t 1 2 0.01 0.01 0.00001 1 t2 2. Peak TJ = PDM x Z thJC + T C 0.0001 0.001 0.01 0.1 1 10 t 1 , Rectangular Pulse Duration (sec) Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 www.irf.com IRG4PC40FPbF VGE = 0V f = 1 MHz Cies = Cge + Cgc + Cce 20 Cres = Cce Coes = Cce + Cgc 3000 Cies 2000 Coes 1000 Cres A 0 1 VCE = 400V I C = 27A SHORTED VGE , Gate-to-Emitter Voltage (V) C , Capacitance ( pF) 4000 10 16 12 8 4 A 0 0 100 20 Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage 2.30 2.20 I C = 27A I C = 14A 1 R G = 10Ω V GE = 15V V CC = 480V A 2.10 10 20 30 40 50 R G , Gate Resistance (Ω) Fig. 9 - Typical Switching Losses vs. Gate Resistance www.irf.com 120 IC = 54A 2.40 0 100 10 Total Switching Losses (mJ) Total Switchig Losses (mJ) 80 Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage V CC = 480V V GE = 15V T J = 25°C I C = 27A 2.50 60 Qg , Total Gate Charge (nC) VCE, Collector-to-Emitter Voltage (V) 2.60 40 60 0.1 -60 -40 -20 0 20 40 60 80 A 100 120 140 160 TJ , Junction Temperature (°C) Fig. 10 - Typical Switching Losses vs. Junction Temperature 5 IRG4PC40FPbF RG TJ V CC V GE 8 1000 = 10Ω = 150°C = 480V = 15V I C , Collector-to-Emitter Current (A) Total Switching Losses (mJ) 10 6 4 2 A 0 0 10 20 30 40 50 IC , Collector-to-Emitter Current (A) Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current 6 60 VGE = 20V GE TJ = 125°C 100 SAFE OPERATING AREA 10 1 1 10 100 1000 VCE , Collector-to-Emitter Voltage (V) Fig. 12 - Turn-Off SOA www.irf.com IRG4PC40FPbF L D.U.T. RL = VC * 50V 0 - 480V 1000V 480V 4 X IC@ 25°C 480µF 960V c d * Driver same type as D.U.T.; Vc = 80% of Vce(max) * Note: Due to the 50V power supply, pulse width and inductor will increase to obtain rated Id. Fig. 13b - Pulsed Collector Fig. 13a - Clamped Inductive Current Test Circuit Load Test Circuit IC L Driver* D.U.T. Fig. 14a - Switching Loss Test Circuit VC 50V 1000V c d e * Driver same type as D.U.T., VC = 480V c d 90% e VC 10% 90% Fig. 14b - Switching Loss t d(off) 10% I C 5% Waveforms tf tr t d(on) t=5µs E on E off E ts = (Eon +Eoff ) www.irf.com 7 IRG4PC40FPbF TO-247AC Package Outline Dimensions are shown in millimeters (inches) TO-247AC Part Marking Information EXAMPLE: THIS IS AN IRFPE30 WITH AS SEMBLY LOT CODE 5657 ASSEMBLED ON WW 35, 2000 IN THE ASS EMBLY LINE "H" Note: "P" in assembly line position indicates "Lead-Free" PART NUMBER INT ERNATIONAL RECTIFIER LOGO IRFPE30 56 ASS EMBLY LOT CODE 035H 57 DATE CODE YEAR 0 = 2000 WEEK 35 LINE H Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 06/04 8 www.irf.com Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/