PAM8304

A Product Line of
Diodes Incorporated
PAM8304
3W MONO CLASS D AUDIO AMPLIFIER
Description
Pin Assignments
The PAM8304 is a mono filter-less Class-D amplifier with high SNR
DFN3X3-8L
Top View
and differential input that helps eliminate noise. The PAM8304
supports 2.8V to 6V operation make it idea for up to 4 cells alkaline
battery applications. The PAM8304 is capable of driving speaker
OUT+ 1
power.
PVDD 2
Features like greater than 90% efficiency and small PCB area make
VDD 3
the PAM8304 Class-D amplifier ideal for portable applications. The
output uses a filter-less architecture minimizing the number of
P8304
XXXYW
NEW PRODUCT
loads as low as 3Ω speaker with a 5V supply maximizing the output
IN- 4
8
OUT-
7
GND
6
SD
5
IN+
external components and PCB area whilst providing a high
performance, simple and lower cost system.
MSOP-8L
Top View
The PAM8304 features short circuit protection, thermal shutdown and
under voltage lock-out.
OUT+ 1
PVDD 2
Features
VDD 3

Supply Voltage from 2.8V to 6.0 V

3Ω Driving Capability
IN- 4

3.0W@10% THD Output with a 4Ω Load and 5V Supply

High Efficiency up to 90% @1W with an 8Ω Load
7 GND
6 SD
5 IN+
Applications

Shutdown Current <1μA

Superior Low Noise without Input

Short Circuit Protection

Thermal Shutdown

Available in Space Saving DFN3030-8L and MSOP-8L
Packages

P8 304
XXXYW
The PAM8304 is available in DFN3030-8L and MOP-8L packages.
8 OUT-
Pb-Free Package

MP4/MP3

GPS

Set-Top-Box

Tablets/Digital Photo Frame

Electronic Dictionary

Portable Game Machines
Typical Applications Circuit
V DD
1μ F
P V DD
V DD
0 .1 μ F
V IN
IN+
0 .1 μ F
/S D
IN-
OU T +
PA M 8 3 0 4
/SD
OU T -
P GN D
PAM8304
Document number: DS36589 Rev. 1 - 2
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GN D
October 2013
© Diodes Incorporated
A Product Line of
Diodes Incorporated
PAM8304
NEW PRODUCT
Pin Descriptions
Pin Name
OUT+
PVDD
VDD
ININ+
MSOP-8L/DFN3x3-8L
1
2
3
4
5
/SD
GND
OUTExposed Pad
6
7
8
—
Function
Positive BTL Output
Power Supply
Analog Power Supply
Negative Differential Input
Positive Differential Input
Shutdown Terminal, Active Low
Ground
Negative BTL Output
NC
Functional Block Diagram
VDD
IN+
PWM
Modulator
+
IN-
SD
SD
Bias and
Vref
OSC
PVDD
Gate
Driv e
OUT+
Gate
Driv e
OUT-
UVLO
SC
Protec t
Startup
Protec tion
OTP
GND
Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Parameter
Supply Voltage (VDD)
Input Voltage (IN+, IN-, /SD)
Storage Temperature
Maximum Junction Temperature
Rating
6.5
Unit
V
-0.3 to VDD +0.3
-65 to +150
150
V
°C
°C
Recommended Operating Conditions (@TA = +25°C, unless otherwise specified.)
Symbol
Parameter
Min
Max
VDD
Supply Voltage
2.8
6.0
V
TA
Operating Ambient Temperature Range
-40
+85
°C
TJ
Junction Temperature Range
-40
+125
°C
PAM8304
Document number: DS36589 Rev. 1 - 2
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Unit
October 2013
© Diodes Incorporated
A Product Line of
Diodes Incorporated
PAM8304
Electrical Characteristics (@TA=25°C, VDD=5V, Gain=18dB, RL=L(33μH)+R+L(33μH), unless otherwise noted.)
Symbol
VDD
Parameter
Supply Voltage
Test Conditions
NEW PRODUCT
THD+N = 10%, f = 1kHz,
R = 4Ω
THD+N = 1%, f = 1kHz,
R = 4Ω
Po
Output Power
THD+N = 10%, f = 1kHz,
R = 8Ω
THD+N = 1%, f = 1kHz,
R = 8Ω
THD+N
Total Harmonic
Distortion Plus
Noise
VDD = 5.0V, Po = 1W, R = 8Ω
VDD = 3.6V, Po = 0.1W, R = 8Ω
VDD = 3.2V, Po =0.1W, R = 8Ω
VDD = 5.0V, Po = 0.5W, R = 4Ω
VDD = 3.6V, Po = 0.2W, R = 4Ω
Min
2.8
VDD = 5.0V
VDD = 3.6V
VDD = 3.2V
VDD = 5.0V
3.0
1.5
1.2
2.4
VDD = 3.6V
VDD = 3.2V
VDD = 5.0V
VDD = 3.6V
VDD = 3.2V
VDD = 5.0V
VDD = 3.6V
1.25
1.0
1.75
0.90
0.70
1.40
0.72
VDD = 3.2V
0.60
0.17
0.16
0.14
0.14
0.16
f = 1kHz
f = 1kHz
VDD = 3.2V, Po = 0.1W, R = 4Ω
Power Supply Ripple
Rejection
VDD = 3.6V, Inputs ac-grounded
with C = 1μF
Dyn
Dynamic Range
VDD = 5V,THD = %, R = 8Ω
Vn
Output Noise
Inputs ac-grounded
PSRR
IQ
Isd
Rdson
fsw
Gv
Vos
VIH
VIL
Efficiency
Quiescent Current
Shutdown Current
Static Drain-to Source Onstate Resistor
Switching Frequency
Closed-loop Gain
Output Offset Voltage
SD Input High Voltage
SD Input Low Voltage
PAM8304
Document number: DS36589 Rev. 1 - 2
RL = 8Ω,THD = 10%
RL = 4Ω,THD = 10%
VDD = 5V
VDD = 2.8V to 5V
High Side PMOS,I = 500mA
Low Side NMOS,I = 500mA
VDD = 2.8V to 5V
VDD = 2.8V to 5V
Input ac-ground, VDD = 5V
VDD = 5V
VDD = 5V
f=217Hz
f=1kHz
f=10kHz
f=1kHz
No A
weighting
W
W
W
%
%
dB
dB
μV
130
93
86
5
No Load
/SD=0V
%
1
mA
μA
50
mΩ
mΩ
kHz
V/V
mV
325
200
400
300K/Rin
VDD=5.0V
VDD=5.0V
Unit
V
W
170
f=1kHz
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Max
6.0
0.17
-68
-70
-67
95
A-weighting
η
Typ
1.4
1.0
V
October 2013
© Diodes Incorporated
A Product Line of
Diodes Incorporated
PAM8304
Performance Characteristics (@TA=25°C, VDD=5V, Gain=18dB, RL=L(33μH)+R+L(33μH), unless otherwise noted.)
THD+N Vs. Output Power (RL=4Ω)
THD+N Vs. Output Power (RL=8Ω)
20
20
NEW PRODUCT
10
10
VDD=5.0V
5
VDD=5.0V
5
2
2
%
1
0.5
0.5
0.2
0.2
0.1
1m
2m
5m
10m
20m
50m
100m
VDD=3.6V
%
VDD=3.6V
1
200m
500m
1
2
0.1
1m
5
W
2m
5m
10m
20m
50m
100m
200m
500m
1
2
3
W
THD+N Vs. Frequency
PSRR Vs. Frequency
10
+0
Po=300mW
T
-5
5
-10
-15
VDD=5.0V
2
VDD=5.0V
-20
-25
1
-30
-35
VDD=3.6V
0 .5
%
d
B
-40
-45
-50
0 .2
-55
0 .1
-60
-65
0 .0 5
-70
-75
0 .0 2
20
50
100
200
500
1k
2k
5k
10k
-80
20
20k
50
100
200
500
Hz
1k
2k
5k
10k
20k
1k
2k
5k
10k
20k
Hz
Frequency Response
Noise Floor
+ 20
+ 20
+ 19.5
+ 10
+ 19
+ 18.5
+0
+ 18
-10
VDD=5.0V
+ 17.5
-20
+ 17
-30
+ 16.5
+ 16
d
B
g
A
+ 15.5
+ 15
+ 14.5
d
B
r
-40
A
-60
+ 14
-50
-70
+ 13.5
-80
+ 13
+ 12.5
-90
+ 12
+ 11.5
-100
VDD=5.0V
+ 11
-110
+ 10.5
+ 10
20
50
100
200
500
1k
2k
5k
10k
20k
Hz
PAM8304
Document number: DS36589 Rev. 1 - 2
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-120
20
50
100
200
500
Hz
October 2013
© Diodes Incorporated
A Product Line of
Diodes Incorporated
PAM8304
Performance Characteristics (@TA=25°C, VDD=5V, Gain=18dB, RL=L(33μH)+R+L(33μH), unless otherwise noted.)
Efficiency Vs. Output Power (RL=8Ω)
NEW PRODUCT
Efficiency Vs. Output Power (RL=4Ω)
Quiescent Current Vs. Supply Voltage
OSC Frequency Vs. Supply Voltage
Start-up Response
PAM8304
Document number: DS36589 Rev. 1 - 2
Shutdown Response
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© Diodes Incorporated
A Product Line of
Diodes Incorporated
PAM8304
Application Information
Input Capacitors (Ci )
In the typical application an input capacitor Ci is required to allow the amplifier to bias the input signal to the proper DC level for optimum
operation. In this case, Ci and the minimum input impedance Ri form a high-pass filter with the corner frequency determined in the follow equation:
NEW PRODUCT
fC 
1
 2 RiCi
It is important to consider the value of Ci as it directly affects the low frequency performance of the circuit. For example, when Ri is 150kΩ and the
specification calls for a flat bass response down to 150Hz. The equation is reconfigured as followed to determine the value of Ci:
Ci 
1
 2 Rifc 
When input resistance variation is considered, if Ci is 7nF one would likely choose a value of 10nF. A further consideration for this capacitor is the
leakage path from the input source through the input network (Ci, Ri and Rf) to the load. This leakage current creates a DC offset voltage at the
input to the amplifier that reduces useful headroom, especially in high gain applications. For this reason, a low-leakage tantalum or ceramic
capacitor is the best choice. When polarized capacitors are used the positive side of the capacitor should face the amplifier input in most
applications as the DC level is held at VDD/2, which is likely higher than the source DC level. Please note that it is important to confirm the
capacitor polarity in the application.
Decoupling Capacitor (CS )
The PAM8304 is a high-performance CMOS audio amplifier that requires adequate power supply decoupling to ensure the output total harmonic
distortion (THD) as low as possible. Power supply decoupling also prevents the oscillations causing by long lead length between the amplifier and
the speaker.
Optimum decoupling is achieved by using two different types of capacitors that target different types of noise on the power supply leads. Higher
frequency transients, spikes or digital hash should be filtered with a good low equivalent-series-resistance (ESR) ceramic capacitor with a value of
typically 1μF. This capacitor should be placed as close as possible to the VDD pin of the device. Lower frequency noise signals should be filtered
with a large ceramic capacitor of 10μF or greater. It's recommended to place this capacitor near the audio power amplifier.
How to Reduce EMI
Most applications require a ferrite bead filter for EMI elimination as shown in Figure 1. The ferrite filter reduces EMI around 1MHz and higher.
When selecting a ferrite bead it should be chosen with high impedance at high frequencies but low impedance at low frequencies.
Ferrite Bead
OUT+
200pF
Ferrite Bead
OUT-
200pF
Figure 1 Ferrite Bead Filter to Reduce EMI
PAM8304
Document number: DS36589 Rev. 1 - 2
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© Diodes Incorporated
A Product Line of
Diodes Incorporated
PAM8304
Application Information (cont.)
Shutdown Operation
In order to reduce power consumption while not in use the PAM8304 contains amplifier shutdown circuitry. When a logic low or ground is applied
to the /SD pin the PAM8304 will enter a standby mode and supply current drawn will be minimized.
Under Voltage Lock-out (UVLO)
NEW PRODUCT
The PAM8304 incorporates circuitry designed to detect low supply voltage. When the supply voltage drops to 2.0V or below, the PAM8304 goes
into a state of shutdown. The device returns to normal operation only when VDD is higher than 2.5V.
Short Circuit Protection (SCP)
The PAM8304 has short circuit protection circuitry on the outputs to prevent the device from damage when output-to-output shorts or output-toGND shorts occur. When a short circuit occurs, the device immediately goes into shutdown state. Once the short is removed the device will be
reactivated.
Over Temperature Protection (OTP)
Thermal protection prevents the device from damage. When the internal die temperature exceeds a typical of 150°C the device will enter a
shutdown state and the outputs are disabled. This is not a latched fault, once the thermal fault is cleared and the temperature of the die decreased
by 40°C the device will restart with no external system interaction.
Anti-POP and Anti-Click Circuitry
The PAM8304 contains circuitry to minimize turn-on and turn-off transients or “click and pops”, where turn-on refers to either power supply turn-on
or device recover from shutdown mode. When the device is turned on, the amplifiers are internally muted. An internal current source ramps up the
internal reference voltage. The device will remain in mute mode until the reference voltage reach half supply voltage. As soon as the reference
voltage is stable, the device will begin full operation. For the best power-off pop performance, the amplifier should be set in shutdown mode prior
to removing the power supply voltage.
PAM8304
Document number: DS36589 Rev. 1 - 2
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October 2013
© Diodes Incorporated
A Product Line of
Diodes Incorporated
PAM8304
Ordering Information
PAM8304 X X X
NEW PRODUCT
Pin Configuration
A: 8 Pin
Package Type
Y: DFN3030
S: MSOP
Shipping Package
R: Tape & Real
Part Number
PAM8304AYR
Package
DFN3030-8L
Standard Package
3,000Units/Tape&Real
PAM8304ASR
MSOP-8L
2,500Units/Tape&Real
Marking Information
DFN3030 /MOP8
PAM8304: Product Code
X: Internal Code
Y: Year
W: Week
PAM8304
Document number: DS36589 Rev. 1 - 2
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© Diodes Incorporated
A Product Line of
Diodes Incorporated
PAM8304
Package Outline Dimensions (All dimensions in mm.)
NEW PRODUCT
Package: DFN3030
DFN
Unit: Millimeter
PAM8304
Document number: DS36589 Rev. 1 - 2
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A Product Line of
Diodes Incorporated
PAM8304
Package Outline Dimensions (All dimensions in mm.)
NEW PRODUCT
Package: MSOP
REF
Millimeter
Min
Max
A
--
1.10
A1
0.05
0.15
A2
0.78
0.94
b
0.22
0.38
c
0.08
0.23
D
2.90
3.10
E
2.90
3.10
E1
4.75
5.05
e
L
PAM8304
Document number: DS36589 Rev. 1 - 2
0.65BSC
0.40
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0.70
October 2013
© Diodes Incorporated
A Product Line of
Diodes Incorporated
PAM8304
IMPORTANT NOTICE
NEW PRODUCT
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
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website, harmless against all damages.
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Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
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This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
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Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
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failure of the life support device or to affect its safety or effectiveness.
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Copyright © 2013, Diodes Incorporated
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PAM8304
Document number: DS36589 Rev. 1 - 2
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October 2013
© Diodes Incorporated