A PRODUCT LINE OF DIODES INCORPORATED PAM8013/PAM8015 3W MONO CLASS D AUDIO AMPLIFIER Description Pin Assignments The PAM8013/PAM8015 is a 3W mono filter-less class-D amplifier U-FLGA1515-9 with high PSRR and differential input that eliminate noise and IN+ GND OUT- A1 A2 A3 VDD PVDD B1 B2 B3 number of external components and PCB area whilst providing a high IN- SD OUT+ performance, simple and lower cost system. C1 C2 C3 RF rectification. NEW PRODUCT Features like greater than 90% efficiency and small PCB area make the PAM8013/PAM8015 Class-D amplifier ideal for portable applications. The output uses a filter-less architecture minimizing the The PAM8013/PAM8015 features short circuit protection and thermal PGND PAM8013 shutdown. IN+ PVDD OUT- A1 A2 A3 GND GND B1 B2 B3 IN- SD OUT+ C1 C2 C3 The PAM8013/PAM8015 is available in U-FLGA1515-9 packages. Features • Ultra Low EMI, -20dB Better Than FCC Class-B @ 300MHz • High Efficiency up to 90% @1W with an 8Ω Speaker • Shutdown Current <1μA • 3W@10% THD Output with a 4Ω Load at 5V Supply • Demanding Few External Components • Superior Low Noise without Input • Supply Voltage from 2.8V to 5.5V • Short Circuit Protection • Thermal Shutdown • Available in Space Saving U-FLGA1515-9 Packages • Pb-Free Package PGND PAM8015 Applications • Cellular Phones/Smart Phones • MP4/MP3 • GPS • Digital Photo Frame • Electronic Dictionary • Portable Game Machines Typical Applications Circuit V DD 1μ F P V D D V D D ( PA M 8 0 1 3 ) 0 .1 μ F V IN IN+ 0 .1 μ F SD OU T+ IN- SD OU T - P GN D PAM8013/PAM8015 Document number: DS36979 Rev. 2 - 2 GN D 1 of 9 www.diodes.com May 2014 © Diodes Incorporated A PRODUCT LINE OF DIODES INCORPORATED PAM8013/PAM8015 NEW PRODUCT Pin Descriptions Pin Name IN+ GND OUTVDD PVDD PAM8013 A1 A2 A3 B1 B2 PAM8015 A1 B1/B2 A3 — A2 PGND INSD OUT+ B3 C1 C2 C3 B3 C1 C2 C3 Function Positive Differential Input Ground Negative BTL output Power Supply Power Supply Power Ground Negative Differential Input SD Terminal to Disable the Chip Positive BTL Output Functional Block Diagram VDD (PAM8013) IN+ - IN- SD PWM Modulator + Bias and Vref OSC OUT+ Gate Drive OUT- UVLO SC Protec t Startup Protec tion OTP SD PVDD Gate Drive GND Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.) Parameter Supply Voltage (VDD) Rating 6.0 Input Voltage(IN+, IN-, SD) -0.3 to VDD+0.3 V -65 to +150 150 °C °C Storage Temperature Maximum Junction Temperature Unit V Recommended Operating Conditions (@TA = +25°C, unless otherwise specified.) Symbol VDD TA TJ Parameter Supply Voltage Operating Ambient Temperature Range Junction Temperature PAM8013/PAM8015 Document number: DS36979 Rev. 2 - 2 2 of 9 www.diodes.com Min 2.8 -25 -40 Max 5.5 85 +125 Unit V °C °C May 2014 © Diodes Incorporated A PRODUCT LINE OF DIODES INCORPORATED PAM8013/PAM8015 Electrical Characteristics (@TA = +25°C, VDD = 5V, Gain = 18dB, RL = L(33μH)+R+L(33μH), unless otherwise noted.) Symbol VDD Parameter Supply Voltage Test Conditions NEW PRODUCT THD+N = 10%, f = 1kHz, R = 4Ω THD+N = 1%, f = 1kHz, R = 4Ω Po Output Power THD+N = 10%, f = 1kHz, R = 8Ω THD+N = 1%, f = 1kHz, R = 8Ω Min 2.8 VDD = 5.0V 3.0 VDD = 3.6V 1.5 VDD = 3.2V 1.2 VDD = 5.0V 2.4 VDD = 3.6V 1.25 VDD = 3.2V 1.0 VDD = 5.0V 1.75 VDD = 3.6V 0.90 VDD = 3.2V 0.70 VDD = 5.0V 1.40 VDD = 3.6V 0.72 VDD = 3.2V 0.60 VDD = 3.6V, PO = 0.1W, R = 8Ω THD+N Unit V W W W W 0.16 f = 1kHz % 0.14 VDD = 3.2V, PO = 0.1W, R = 8Ω 0.14 VDD = 5.0V, PO = 0.5W, R = 4Ω VDD = 3.6V, PO = 0.2W, R = 4Ω Max 5.5 0.17 VDD = 5.0V, PO = 1W, R = 8Ω Total Harmonic Distortion Plus Noise Typ 0.16 f = 1kHz % 0.17 VDD = 3.2V, PO = 0.1W, R = 4Ω f = 217Hz f = 1kHz f = 10kHz -68 -70 -67 dB f = 1kHz 95 dB Inputs AC-grounded No A weighting A-weighting Efficiency RL= 8Ω, THD = 10% RL= 4Ω, THD = 10% f = 1kHz 170 130 93 86 IQ Quiescent Current VDD = 5V No Load Isd Shutdown Current VDD = 2.8V to 5V Rdson Static Drain-to Source On-state Resistor High Side PMOS, I = 500mA VDD = 5.0V 325 Low Side NMOS, I = 500mA VDD = 5.0V 200 mΩ fsw Switching Frequency VDD = 2.8V to 5V 400 kHz V/V PSRR Dyn Vn η Power Supply Ripple Rejection VDD = 3.6V, Inputs ac-grounded with C = 1μF Dynamic Range VDD = 5V,THD = 1%, R = 8Ω Output Noise mA 1 SD = 0V Gv Closed-loop Gain VDD = 2.8V to 5V 300K/RIN Input Impedance VDD = 2.8V to 5V 28.5 Vos Output Offset Voltage Input AC-ground, VDD = 5V VIH SD Input High Voltage VDD = 5V VIL SD Input Low Voltage VDD = 5V Document number: DS36979 Rev. 2 - 2 % 5 RIN PAM8013/PAM8015 μV mΩ KΩ 20 1.4 1.0 3 of 9 www.diodes.com μA mV V May 2014 © Diodes Incorporated A PRODUCT LINE OF DIODES INCORPORATED PAM8013/PAM8015 Performance Characteristics (@TA = +25°C, VDD = 5V, Gain = 18dB, RL = L(33μH)+R+L(33μH), unless otherwise noted.) THD+N Vs. Output Power (RL = 4Ω) THD+N Vs. Output Power (RL = 8Ω) 20 NEW PRODUCT 10 20 VDD = 5.0V/3.6V 5 5 2 2 1 % VDD = 5.0V/3.6V 10 1 % 0.5 0.5 0.2 0.2 0.1 0.1 0.06 1m 2m 5m 10m 20m 50m 100m 200m 500m 1 2 0.04 1m 5 2m 5m 10m 20m W 50 m 100m 200m 500m 1 2 3 W THD+N vs. Frequency PSRR vs. Frequency 10 +0 5 2 T -5 VDD = 5.0V/3.6V PO = 300mW -10 -15 -20 -25 1 -30 0.5 -35 d B % -40 0.2 -45 -50 0.1 -55 -60 0 .05 -65 -70 0 .02 0 .01 20 -75 50 100 200 500 1k 2k 5k 10k -80 20 20k 50 100 200 500 1k 2k 5k 10k 2k 5k 10k 20k Hz Hz Frequency Response Noise Floor + 24 +0 + 22 -10 -20 + 20 -30 + 18 -40 -50 + 16 d B g A + 14 + 12 d B r + 10 A -60 -70 -80 -90 -100 +8 -110 +6 -120 +4 -130 -140 +2 -0 20 50 100 200 500 1k 2k 5k 10k 20k Hz PAM8013/PAM8015 Document number: DS36979 Rev. 2 - 2 4 of 9 www.diodes.com -150 20 50 100 200 500 1k 20k Hz May 2014 © Diodes Incorporated A PRODUCT LINE OF DIODES INCORPORATED PAM8013/PAM8015 Performance Characteristics (cont.) (@TA = +25°C, VDD = 5V, Gain = 18dB, RL = L(33μH)+R+L(33μH), unless otherwise noted.) Efficiency vs. Output Power (RL = 8Ω) NEW PRODUCT Efficiency vs. Output Power (RL = 4Ω) Quiescent Current Vs. Supply Voltage OSC Frequency Vs. Supply Voltage Start-up Response PAM8013/PAM8015 Document number: DS36979 Rev. 2 - 2 Shutdown Response 5 of 9 www.diodes.com May 2014 © Diodes Incorporated A PRODUCT LINE OF DIODES INCORPORATED PAM8013/PAM8015 Application Information Input Capacitors (Ci) In the typical application, an input capacitor, Ci, is required to allow the amplifier to bias the input signal to the proper DC level for optimum operation. In this case, Ci and the minimum input impedance Ri form is a high-pass filter with the corner frequency determined in the follow equation: NEW PRODUCT fC = 1 ( 2π RiCi) It is important to consider the value of Ci as it directly affects the low frequency performance of the circuit. For example, when Ri is 150kΩ and the specification calls for a flat bass response are down to 150Hz. Equation is reconfigured as followed: Ci = 1 ( 2π Rifc ) When input resistance variation is considered, the Ci is 7nF, so one would likely choose a value of 10nF. A further consideration for this capacitor is the leakage path from the input source through the input network (Ci, Ri + Rf) to the load. This leakage current creates a DC offset voltage at the input to the amplifier that reduces useful headroom, especially in high gain applications. For this reason, a low-leakage tantalum or ceramic capacitor is the best choice. When polarized capacitors are used, the positive side of the capacitor should face the amplifier input in most applications as the DC level is held at VDD/2, which is likely higher than the source DC level. Please note that it is important to confirm the capacitor polarity in the application. Decoupling Capacitor (CS) The PAM8013/PAM8015 is a high-performance CMOS audio amplifier that requires adequate power supply decoupling to ensure the output total harmonic distortion (THD) as low as possible. Power supply decoupling also prevents the oscillations causing by long lead length between the amplifier and the speaker. The optimum decoupling is achieved by using two different types of capacitors that target on different types of noise on the power supply leads. For higher frequency transients, spikes, or digital hash on the line, a good low equivalent-series-resistance (ESR) ceramic capacitor, typically 1μF, is placed as close as possible to the device VDD pin for the best operation. For filtering lower frequency noise signals, a large ceramic capacitor of 10μF or greater placed near the audio power amplifier is recommended. How to Reduce EMI Most applications require a ferrite bead filter for EMI elimination shown at Figure 1. The ferrite filter reduces EMI around 1MHz and higher. When selecting a ferrite bead, choose one with high impedance at high frequencies, but low impedance at low frequencies. Ferrite Bead OUT+ 200pF Ferrite Bead OUT- 200pF Figure 1 Ferrite Bead Filter to Reduce EMI PAM8013/PAM8015 Document number: DS36979 Rev. 2 - 2 6 of 9 www.diodes.com May 2014 © Diodes Incorporated A PRODUCT LINE OF DIODES INCORPORATED PAM8013/PAM8015 Application Information (cont.) Shutdown Operation In order to reduce power consumption while not in use, the PAM8013/PAM8015 contains shutdown circuitry amplifier off when logic low is placed on the SD pin. By switching the shutdown pin connected to GND, the PAM8013/ PAM8015 supply current draw will be minimized in idle mode. Under Voltage Lock-out (UVLO) NEW PRODUCT The PAM8013/PAM8015 incorporates circuitry designed to detect low supply voltage. When the supply voltage drops to 2.0V or below, the PAM8013/PAM8015 goes into a state of shutdown, and the device comes out of its shutdown state and restore to normal function only when VDD higher than 2.2V. Short Circuit Protection (SCP) The PAM8013/PAM8015 has short circuit protection circuitry on the outputs to prevent the device from damage when output-to-output shorts or output-to-GND shorts occur. When a short circuit occurs, the device immediately goes into shutdown state. Once the short is removed, the device will be reactivated. Over Temperature Protection (OTP) Thermal protection on the PAM8013/PAM8015 prevents the device from damage when the internal die temperature exceeds 150°C. There is a 15°C tolerance on this trip point from device to device. Once the die temperature exceeds the set point, the device will enter the shutdown state and the outputs are disabled. This is not a latched fault. The thermal fault is cleared once the temperature of the die decreased by 40°C. This large hysteresis will prevent motor boating sound well and the device begins normal operation at this point with no external system interaction. POP and Click Circuitry The PAM8013/PAM8015 contains circuitry to minimize turn-on and turn-off transients or “click and pops”, where turn-on refers to either power supply turn-on or device recover from shutdown mode. When the device is turned on, the amplifiers are internally muted. An internal current source ramps up the internal reference voltage. The device will remain in mute mode until the reference voltage reach half supply voltage, 1/2 VDD. As soon as the reference voltage is stable, the device will begin full operation. For the best power-off pop performance, the amplifier should be set in shutdown mode prior to removing the power supply voltage. Ordering Information PAM8013/PAM8015 X X X Pin Configuration A: 9 Pin Part Number PAM8013AKR PAM8015AKR PAM8013/PAM8015 Document number: DS36979 Rev. 2 - 2 Package Type K: U-FLGA1515-9 Package U-FLGA1515-9 U-FLGA1515-9 7 of 9 www.diodes.com Shipping Package R: Tape & Real Standard Package 3,000Units/Tape&Real 3,000Units/Tape&Real May 2014 © Diodes Incorporated A PRODUCT LINE OF DIODES INCORPORATED PAM8013/PAM8015 Marking Information PAM8013- U-FLGA1515-9 NEW PRODUCT BU YW BU: PAM8013 Product Code Y: Year W: Week PAM8015- U-FLGA1515-9 BV YW BV: PAM8015 Product Code Y: Year W: Week Package Outline Dimensions (All dimensions in mm.) Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. 3 A 1 A A e n a l P g n i t a e S D e 1 . 0 R E ︶ e D I 1 # n i P ︵ U-FLGA1515-9 Dim Min Max Typ A 0.55 0.65 0.60 A1 0 0.05 0.02 A3 0.13 BSC b 0.20 0.30 0.25 D 1.45 1.55 1.50 E 1.45 1.55 1.50 e 0.50 BSC Z 0.125 BSC All Dimensions in mm Z . Q S b PAM8013/PAM8015 Document number: DS36979 Rev. 2 - 2 8 of 9 www.diodes.com May 2014 © Diodes Incorporated A PRODUCT LINE OF DIODES INCORPORATED PAM8013/PAM8015 Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. 1 X X Y C G G1 X X1 X2 Y Y1 Y2 1 Y 2 Y NEW PRODUCT G Dimensions 1 G C Value (in mm) 0.587 0.150 0.150 0.525 0.350 1.700 0.525 0.350 1.700 2 X IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. 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