TI CSD18503Q5A

CSD18503Q5A
www.ti.com
SLPS358 – JUNE 2012
40V N-Channel NexFET™ Power MOSFETs
Check for Samples: CSD18503Q5A
FEATURES
1
•
•
•
•
•
•
•
•
2
PRODUCT SUMMARY
Ultra Low Qg and Qgd
Low Thermal Resistance
Avalanche Rated
Logic Level
Pb Free Terminal Plating
RoHS Compliant
Halogen Free
SON 5-mm × 6-mm Plastic Package
Typical Values at 25°C
unless otherwise stated
TYPICAL VALUE
UNIT
VDS
Drain to Source Voltage
40
V
Qg
Gate Charge Total (4.5V)
13
nC
Qgd
Gate Charge Gate to Drain
RDS(on)
Drain to Source On Resistance
VGS(th)
Threshold Voltage
4.3
nC
VGS = 4.5V
4.7
mΩ
VGS = 10V
3.4
mΩ
1.8
V
ORDERING INFORMATION
APPLICATIONS
•
•
•
DC-DC Conversion
Secondary Side Synchronous Rectifier
Battery Motor Control
Figure 1. Top View
Qty
Ship
CSD18503Q5A
SON 5-mm × 6-mm
Plastic Package
13-Inch
Reel
2500
Tape and
Reel
8
1
VALUE
UNIT
VDS
Drain to Source Voltage
40
V
VGS
Gate to Source Voltage
±20
V
Continuous Drain Current (Package limited),
TC = 25°C
100
Continuous Drain Current (Silicon limited),
TC = 25°C
145
ID
Continuous Drain Current, TA = 25°C(1)
19
Pulsed Drain Current, TA = 25°C(2)
124
A
3.1
W
S
2
7
D
PD
Power Dissipation(1)
6
D
Operating Junction and Storage
Temperature Range
°C
3
TJ,
TSTG
–55 to 150
S
EAS
Avalanche Energy, single pulse
ID = 56A, L = 0.1mH, RG = 25Ω
157
mJ
G
5
4
D
(1) Typical RθJA = 40°C/W on a 1-inch2, 2-oz. Cu pad on a 0.06inch thick FR4 PCB.
(2) Pulse duration ≤300μs, duty cycle ≤2%
P0093-01
RDS(on) vs VGS
20
GATE CHARGE
10
18
VGS - Gate-to-Source Voltage (V)
TC = 25°C Id = 22A
TC = 125ºC Id = 22A
16
14
12
10
8
6
4
2
0
A
IDM
D
D
RDS(on) - On-State Resistance - mΩ
Media
ABSOLUTE MAXIMUM RATINGS
The NexFET™ power MOSFET has been designed
to minimize losses in power conversion applications.
0
Package
TA = 25°C unless otherwise stated
DESCRIPTION
S
Device
2
4
6
8
10
12
14
16
VGS - Gate-to- Source Voltage - V
18
20
G001
ID = 22A
VDS = 20V
8
6
4
2
0
0
5
10
15
20
Qg - Gate Charge - nC (nC)
25
30
G001
1
2
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
NexFET is a trademark of Texas Instruments.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2012, Texas Instruments Incorporated
CSD18503Q5A
SLPS358 – JUNE 2012
www.ti.com
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise stated)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Static Characteristics
BVDSS
Drain to Source Voltage
VGS = 0V, ID = 250μA
IDSS
Drain to Source Leakage Current
VGS = 0V, VDS = 32V
IGSS
Gate to Source Leakage Current
VDS = 0V, VGS = 20V
VGS(th)
Gate to Source Threshold Voltage
VDS = VGS, ID = 250μA
RDS(on)
Drain to Source On Resistance
gfs
Transconductance
40
1.5
V
1
μA
100
nA
1.8
2.3
V
4.7
6.2
mΩ
VGS = 10V, ID = 22A
3.4
4.3
mΩ
VDS = 20V, ID = 22A
127
VGS = 4.5V, ID = 22A
S
Dynamic Characteristics
Ciss
Input Capacitance
2200
2640
pF
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
510
612
pF
13
16
RG
pF
Series Gate Resistance
1.2
2.4
Ω
Qg
Gate Charge Total (4.5V)
13
16
nC
Qg
Gate Charge Total (10V)
27
32
Qgd
Gate Charge Gate to Drain
Qgs
Qg(th)
Qoss
Output Charge
td(on)
Turn On Delay Time
tr
Rise Time
td(off)
Turn Off Delay Time
tf
Fall Time
VGS = 0V, VDS = 20V, f = 1MHz
VDS = 20V, ID = 22A
4.3
nC
Gate Charge Gate to Source
4.5
nC
Gate Charge at Vth
3.8
nC
30
nC
4.5
ns
8.8
ns
15
ns
2.6
ns
VDS = 20V, VGS = 0V
VDS = 20V, VGS = 10V,
IDS = 22A, RG = 2Ω
Diode Characteristics
VSD
Diode Forward Voltage
Qrr
Reverse Recovery Charge
trr
Reverse Recovery Time
ISD = 22A, VGS = 0V
0.8
VDS= 20V, IF = 22A,
di/dt = 300A/μs
22
1
nC
V
37
ns
THERMAL CHARACTERISTICS
(TA = 25°C unless otherwise stated)
PARAMETER
RθJC
Thermal Resistance Junction to Case (1)
RθJA
Thermal Resistance Junction to Ambient (1) (2)
(1)
(2)
2
MIN
TYP
MAX
UNIT
1
°C/W
50
°C/W
RθJC is determined with the device mounted on a 1-inch2 (6.45-cm2), 2-oz. (0.071-mm thick) Cu pad on a 1.5-inch × 1.5-inch (3.81-cm ×
3.81-cm), 0.06-inch (1.52-mm) thick FR4 PCB. RθJC is specified by design, whereas RθJA is determined by the user’s board design.
Device mounted on FR4 material with 1-inch2 (6.45-cm2), 2-oz. (0.071-mm thick) Cu.
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CSD18503Q5A
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GATE
SLPS358 – JUNE 2012
GATE
Source
N-Chan 5x6 QFN TTA MIN Rev3
N-Chan 5x6 QFN TTA MAX Rev3
Max RθJA = 50°C/W
when mounted on
1 inch2 (6.45 cm2) of 2oz. (0.071-mm thick)
Cu.
Source
Max RθJA = 121°C/W
when mounted on a
minimum pad area of
2-oz. (0.071-mm thick)
Cu.
DRAIN
DRAIN
M0137-02
M0137-01
TYPICAL MOSFET CHARACTERISTICS
(TA = 25°C unless otherwise stated)
Figure 2. Transient Thermal Impedance
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SLPS358 – JUNE 2012
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TYPICAL MOSFET CHARACTERISTICS (continued)
(TA = 25°C unless otherwise stated)
TEXT ADDED FOR SPACING
100
90
90
IDS - Drain-to-Source Current - A
IDS - Drain-to-Source Current - A
TEXT ADDED FOR SPACING
100
80
70
60
50
40
30
VGS =10V
VGS =6.5V
VGS =4.5V
20
10
0
0
0.5
1
VDS - Drain-to-Source Voltage - V
80
70
60
50
40
30
TC = 125°C
TC = 25°C
TC = −55°C
20
10
0
1.5
VDS = 5V
0
1
G001
Figure 3. Saturation Characteristics
TEXT ADDED FOR SPACING
TEXT ADDED FOR SPACING
8
10000
C − Capacitance − pF
VGS - Gate-to-Source Voltage (V)
Ciss = Cgd + Cgs
Coss = Cds + Cgd
Crss = Cgd
6
4
2
1000
100
10
0
5
10
15
20
Qg - Gate Charge - nC (nC)
25
1
30
0
4
8
G001
Figure 5. Gate Charge
12
16
20
24
28
32
VDS - Drain-to-Source Voltage - V
36
40
G001
Figure 6. Capacitance
TEXT ADDED FOR SPACING
TEXT ADDED FOR SPACING
2.5
20
RDS(on) - On-State Resistance - mΩ
ID = 250uA
VGS(th) - Threshold Voltage - V
G001
100000
ID = 22A
VDS = 20V
0
5
Figure 4. Transfer Characteristics
10
2.2
1.9
1.6
1.3
1
−75
−25
25
75
125
TC - Case Temperature - ºC
Figure 7. Threshold Voltage vs. Temperature
4
2
3
4
VGS - Gate-to-Source Voltage - V
175
TC = 25°C Id = 22A
TC = 125ºC Id = 22A
18
16
14
12
10
8
6
4
2
0
0
2
G001
4
6
8
10
12
14
16
VGS - Gate-to- Source Voltage - V
18
20
G001
Figure 8. On-State Resistance vs. Gate-to-Source Voltage
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SLPS358 – JUNE 2012
TYPICAL MOSFET CHARACTERISTICS (continued)
(TA = 25°C unless otherwise stated)
TEXT ADDED FOR SPACING
TEXT ADDED FOR SPACING
100
VGS = 4.5V
VGS = 10V
2.1
ID =22A
ISD − Source-to-Drain Current - A
Normalized On-State Resistance
2.4
1.8
1.5
1.2
0.9
0.6
0.3
−75
−25
25
75
125
TC - Case Temperature - ºC
175
TC = 25°C
TC = 125°C
10
1
0.1
0.01
0.001
0.0001
0
0.2
0.4
0.6
0.8
VSD − Source-to-Drain Voltage - V
G001
Figure 9. Normalized On-State Resistance vs. Temperature
1ms
10ms
100ms
1s
DC
− IAV - Peak Avalanche Current- A
IDS - Drain-to-Source Current - A
TEXT ADDED FOR SPACING
100
100
10
1
0.1
G001
Figure 10. Typical Diode Forward Voltage
TEXT ADDED FOR SPACING
2000
1000
1
Single Pulse
Typical RthetaJA =97ºC/W(min Cu)
0.01
0.01
0.1
1
10
VDS - Drain-to-Source Voltage - V
50
TC = 25ºC
TC = 125ºC
10
5
0.01
0.1
TAV - Time in Avalanche - mS
G001
Figure 11. Maximum Safe Operating Area
1
G001
Figure 12. Single Pulse Unclamped Inductive Switching
TEXT ADDED FOR SPACING
− IDS - Drain- to- Source Current - A
120
100
80
60
40
20
0
−50
−25
0
25
50
75
100 125
TC - Case Temperature - ºC
150
175
G001
Figure 13. Maximum Drain Current vs. Temperature
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CSD18503Q5A
SLPS358 – JUNE 2012
www.ti.com
MECHANICAL DATA
Q5A Package Dimensions
L
E2
H
K
7
D2
3
4
b
4
5
5
6
3
6
e
D1
7
2
2
8
8
1
1
q
L1
Top View
Bottom View
Side View
c
A
q
E1
E
Front View
M0135-01
DIM
6
MILLIMETERS
MIN
NOM
MAX
A
0.90
1.00
1.10
b
0.33
0.41
0.51
c
0.20
0.25
0.34
D1
4.80
4.90
5.00
D2
3.61
3.81
4.02
E
5.90
6.00
6.10
E1
5.70
5.75
5.80
E2
3.38
3.58
3.78
e
1.17
1.27
1.37
H
0.41
0.56
0.71
K
1.10
L
0.51
0.61
0.71
L1
0.06
0.13
0.20
θ
0°
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12°
Copyright © 2012, Texas Instruments Incorporated
Product Folder Link(s): CSD18503Q5A
CSD18503Q5A
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SLPS358 – JUNE 2012
Figure 14. Recommended PCB Pattern
DIM
F1
F7
F3
8
1
F2
F11
F5
F9
5
4
F6
MILLIMETERS
INCHES
MIN
MAX
MIN
MAX
F1
6.205
6.305
0.244
0.248
F2
4.46
4.56
0.176
0.18
F3
4.46
4.56
0.176
0.18
F4
0.65
0.7
0.026
0.028
F5
0.62
0.67
0.024
0.026
F6
0.63
0.68
0.025
0.027
F7
0.7
0.8
0.028
0.031
F8
0.65
0.7
0.026
0.028
F9
0.62
0.67
0.024
0.026
F10
4.9
5
0.193
0.197
F11
4.46
4.56
0.176
0.18
F8
F4
F10
M0139-01
For recommended circuit layout for PCB designs, see application note SLPA005 – Reducing Ringing Through
PCB Layout Techniques.
K0
4.00 ±0.10 (See Note 1)
0.30 ±0.05
2.00 ±0.05
+0.10
–0.00
12.00 ±0.30
Ø 1.50
1.75 ±0.10
Q5A Tape and Reel Information
5.50 ±0.05
B0
R 0.30 MAX
A0
8.00 ±0.10
Ø 1.50 MIN
A0 = 6.50 ±0.10
B0 = 5.30 ±0.10
K0 = 1.40 ±0.10
R 0.30 TYP
M0138-01
Notes:
1. 10-sprocket hole-pitch cumulative tolerance ±0.2
2. Camber not to exceed 1mm in 100mm, noncumulative over 250mm
3. Material: black static-dissipative polystyrene
4. All dimensions are in mm (unless otherwise specified)
5. A0 and B0 measured on a plane 0.3mm above the bottom of the pocket
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PACKAGE OPTION ADDENDUM
www.ti.com
2-Jul-2012
PACKAGING INFORMATION
Orderable Device
CSD18503Q5A
Status
(1)
ACTIVE
Package Type Package
Drawing
SON
DQJ
Pins
Package Qty
8
2500
Eco Plan
(2)
Pb-Free (RoHS
Exempt)
Lead/
Ball Finish
CU SN
MSL Peak Temp
(3)
Samples
(Requires Login)
Level-1-260C-UNLIM
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability
information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that
lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between
the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight
in homogeneous material)
(3)
MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
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provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
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In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
Addendum-Page 1
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pertaining to warranty, patent infringement, and limitation of liability.
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accordance with TI’s standard warranty. Testing and other quality control techniques are utilized to the extent
TI deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily
performed, except those mandated by government requirements.
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