DMN61D8LVTQ

DMN61D8LVTQ
Product Summary
V(BR)DSS

ID max
TA = +25°C
RDS(ON) max
1.8Ω @ VGS = 5V
60V
PRODUCT
INFORMATION
ADVANCED NEW
Features and Benefits

470mA
2.4Ω @ VGS = 3V
Description and Applications
DMN61D8LVT provides a single component solution for switching
inductive loads such as relays, solenoids, and small DC motors in
automotive applications, without the need of a freewheeling diode.
DMN61D8LVT accepts logic level inputs, thus allowing it to be driven
by logic gates, inverters and microcontrollers. It is ideally suited for
door, window and antenna relay coils.





Mechanical Data






ESD Protected
Provides a reliable and robust interface between sensitive logic
and DC relay coils
Replaces 3 to 4 discrete components enabling PCB footprint to
be reduced
Internal active clamp removes the need for external zener diode
Totally Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 standards for High Reliability
PPAP Capable (Note 4)
Case: TSOT26
Case Material: Molded Plastic, “Green” Molding Compound;
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals Connections: See Diagram
Terminals: Finish – Matte Tin Annealed over Copper Leadframe;
Solderable per MIL-STD-202, Method 208 e3
Weight: 0.013 grams (Approximate)
TSOT26
Top View
Internal Schematic
Top View
Equivalent Circuit
Ordering Information (Note 5)
Notes:
Part Number
Case
Packaging
DMN61D8LVTQ-7
TSOT26
3,000/Tape & Reel
DMN61D8LVTQ-13
TSOT26
10,000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally the
same, except where specified. For more information, please refer to http://www.diodes.com/quality/product_grade_definitions/.
5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
TSOT26
1D8 = Product Type Marking Code
YM = Date Code Marking
Y or = Year (ex: B= 2014)
M = Month (ex: 9 = September)
Date Code Key
Year
Code
Month
Code
2014
B
Jan
1
2015
C
Feb
2
DMN61D8LVTQ
Document number: DS37822 Rev. 2 - 2
Mar
3
2016
D
Apr
4
May
5
2017
E
Jun
6
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2018
F
Jul
7
Aug
8
2019
G
Sep
9
Oct
O
2020
H
Nov
N
Dec
D
September 2015
© Diodes Incorporated
DMN61D8LVTQ
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
PRODUCT
INFORMATION
ADVANCED NEW
Characteristic
Symbol
Value
Units
Drain-Source Voltage
VDSS
60
V
Gate-Source Voltage
VGSS
±12
V
ID
630
500
mA
Maximum Continuous Body Diode Forward Current (Note 7)
IS
0.5
A
Single Pulse Drain-to-Source Avalanche Energy
(For Relay’s Coils/Inductive Loads of 80Ω or Higher) (TJ Initial = +85°C)
EZ
200
mJ
Peak Power Dissipation, Drain−to−Source (Non repetitive current square
pulse 1.0 ms duration) (TJ Initial = +85°C)
PPK
20
W
Load Dump Pulse, Drain−to−Source, RSOURCE = 0.5Ω, T = 300 ms)
(For Relay’s Coils/Inductive Loads of 80Ω or Higher) (TJ Initial = +85°C)
ELD1
60
V
Inductive Switching Transient 1, Drain−to−Source
(Waveform: RSOURCE = 10Ω, T = 2.0 ms)
(For Relay’s Coils/Inductive Loads of 80Ω or Higher) (TJ Initial = +85°C)
ELD2
100
V
Inductive Switching Transient 2, Drain−to−Source
(Waveform: RSOURCE = 4.0Ω, T = 50 µs)
(For Relay’s Coils/Inductive Loads of 80Ω or Higher) (TJ Initial = +85°C)
ELD3
300
V
Reverse Battery, 10 Minutes (Drain−to−Source)
(For Relay’s Coils/Inductive Loads of 80Ω or more)
Rev−Bat
-14
V
Dual Voltage Jump Start, 10 Minutes (Drain-to-Source)
Dual−Volt
28
V
ESD
4,000
V
Symbol
Value
Units
PD
820
mW
RθJA
154
°C/W
PD
1,090
mW
RθJA
116
°C/W
TJ, TSTG
-55 to +150
°C
Continuous Drain Current (Note 7)
Steady
State
TA = +25°C
TA = +70°C
ESD Human Body Model (HBM)
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Steady State
Total Power Dissipation (Note 7)
Thermal Resistance, Junction to Ambient (Note 7)
Steady State
Operating and Storage Temperature Range
Notes:
6. Device mounted on FR-4 PCB, with minimum recommended pad layout.
7. Device mounted on 1” x 1” FR-4 PCB with high coverage 2oz. copper, single sided.
DMN61D8LVTQ
Document number: DS37822 Rev. 2 - 2
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DMN61D8LVTQ
Electrical Characteristics
(@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 8)
Symbol
Min
Typ
BVDSS
60
Unit
Test Condition


V
VGS = 0V, ID = 10mA
µA
VDS = 60V, VGS = 0V
VDS = 12V, VGS = 0V
Zero Gate Voltage Drain Current
IDSS


50
0.5
Gate-Source Leakage
IGSS


±90
±60
µA
VGS = ±5V, VDS = 0V
VGS = ±3V, VDS = 0V
Gate Threshold Voltage
VGS(th)
1.3

2.0
V
VDS = VGS, ID = 1mA
Static Drain-Source On-Resistance
RDS(ON)

1.1
1.4
1.8
2.4
Ω
Forward Transfer Admittance
|Yfs|
80


ms
VDS =12V, ID = 0.15A
Diode Forward Voltage
VSD


1.2
V
VGS = 0V, IS = 0.15A
Input Capacitance
Ciss

12.9

pF
Output Capacitance
Coss

17

pF
Reverse Transfer Capacitance
Crss

0.84

pF
Total Gate Charge
Qg

0.74

nC
Gate-Source Charge
Qgs

0.19

nC
Gate-Drain Charge
Qgd

0.16

nC
Turn-On Delay Time
tD(on)

131

ns
Turn-On Rise Time
tr

301

ns
Turn-Off Delay Time
tD(off)

582

ns
tf

440

ns
ON CHARACTERISTICS (Note 8)
VGS =5V, ID = 0.15A
VGS = 3V, ID = 0.15A
DYNAMIC CHARACTERISTICS (Note 9)
Turn-Off Fall Time
Notes:
VDS = 12V, VGS = 0V
f = 1.0MHz
VGS = 5V, VDS = 12V,
ID =150mA
VDD = 12V, VGS = 5V.
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing
1
VGS = 10V
1
VGS = 3.0V
VDS = 5.0V
VGS = 4.0V
VGS = 4.5V
0.8
0.8
VGS = 5.0V
0.6
ID, DRAIN CURRENT (A)
ID , DRAIN CURRENT (A)
PRODUCT
INFORMATION
ADVANCED NEW
Drain-Source Breakdown Voltage
Max
VGS = 2.5V
0.4
0.6
T A = 150°C
0.4
T A = 85°C
0.2
0.2
TA = 125°C
TA = 25°C
VGS = 2.0V
0
0
VGS = 1.8V
1
2
3
4
V DS, DRAIN-SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristic
DMN61D8LVTQ
Document number: DS37822 Rev. 2 - 2
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0
1
TA = -55°C
1.5
2
2.5
3
VGS, GATE-SOURCE VOLTAGE (V)
Figure 2 Typical Transfer Characteristics
3.5
September 2015
© Diodes Incorporated
1.8
1.6
VGS = 3V
1.4
1.2
VGS = 5V
1
0.8
0.6
0.4
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
RDS(ON), DRAIN-SOURCE ON-RESISTANCE ( )
RDS(ON), DRAIN-SOURCE ON-RESISTANCE ()
2
5
4
3
ID = 150mA
2
1
0
0
3
2
4
6
8
10
VGS, GATE-SOURCE VOLTAGE (V)
Figure 4 Typical Transfer Characteristic
12
2
VGS = 5V
RDS(ON), DRAI N-SOURCE
ON-RESISTANCE (NORMALIZED)
RD S(ON ), DRAIN-SOURCE ON-RESISTANCE ( )
ID , DRAIN-SOURCE CURRENT (A)
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
2.5
T A = 150°C
2
TA = 125°C
1.5
TA = 85°C
1
T A = 25°C
T A = -55°C
0.5
1.8
VGS = 5V
I D = 150mA
1.6
VGS = 3V
I D = 150mA
1.4
1.2
1
0.8
0
0
0.2
0.4
0.6
0.8
ID , DRAIN CURRENT (A)
Figure 5 Typical On-Resistance vs.
Drain Current and Temperature
1
0.6
-50
100 125 150
0
25
50
75
TJ, JUNCTION TEMPERATURE ( C)
Figure 6 On-Resistance Variation with Temperature
-25
1.8
VGS(th), GATE THRESHOLD VOLTAG E (V)
3
R DS(ON), DRAIN-SOURCE ON-RESISTANCE ( )
PRODUCT
INFORMATION
ADVANCED NEW
DMN61D8LVTQ
2.5
VGS = 3V
2
I D = 150mA
1.5
VGS = 5V
ID = 150mA
1
0.5
0
-50
-25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE ( C)
Figure 7 On-Resistance Variation with Temperature
DMN61D8LVTQ
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1.7
1.6
ID = 1mA
1.5
1.4
ID = 250µA
1.3
1.2
1.1
1
0.9
-50
25
-25
0
50
75 100 125 150
TJ, JUNCTION TEMPERATURE ( C)
Figure 8 Gate Threshold Variation vs. Ambient Temperature
September 2015
© Diodes Incorporated
DMN61D8LVTQ
100
1
CT , JUNCTION CAPACITANCE (pF)
IS, SOURCE CURRENT (A)
0.8
T A = 150°C
TA = 125°C
T A = 85°C
0.6
0.4
T A = 25°C
0.2
0
0
T A = -55°C
0.3
0.6
0.9
1.2
V SD, SOURCE-DRAIN VOLTAGE (V)
Figure 9 Diode Forward Voltage vs. Current
1.5
Ciss
10
Coss
1
C rss
0
0
5
10
15
20
25
30
35
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 10 Typical Junction Capacitance
40
7
VGS GATE THRESHOLD VOLTAGE (V)
6
5
4
VDS = 12V
3
I D = 150mA
2
1
0
0
0.2
0.4
0.6
0.8
1
1.2
Qg, TOTAL GATE CHARGE (nC)
Figure 11 Gate Charge
1
r(t), TRANSIENT THERMAL RESISTANCE
PRODUCT
INFORMATION
ADVANCED NEW
f = 1MHz
1.4
D = 0.9
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.05
D = 0.02
0.01
D = 0.01
D = 0.005
Rthja (t) = r(t) * Rthja
RJA = 154°C/W
Duty Cycle, D = t1/ t2
D = Single Pulse
0.001
0.00001
DMN61D8LVTQ
Document number: DS37822 Rev. 2 - 2
0.0001
0.001
0.01
0.1
1
t1, PULSE DURATION TIME (sec)
Figure 13 Transient Thermal Resistance
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10
100
1000
September 2015
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DMN61D8LVTQ
Package Outline Dimensions
PRODUCT
INFORMATION
ADVANCED NEW
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version.
TSOT26
D
Dim
e1
A

1.00

A1
0.01
0.10

A2
0.84
0.90

D


2.90
E


2.80
E
E1
L2
c
4x1
e
L

6x b
A
A2
A1
Min
Max
Typ
E1


1.60
b
0.30
0.45

c
0.12
0.20

e


0.95
e1


1.90
L
0.30
0.50
L2


0.25
θ
0°
8°
4°
θ1
4°
12°

All Dimensions in mm
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
C
C
Dimensions Value (in mm)
C
0.950
X
0.700
Y
1.000
Y1
3.199
Y1
Y (6x)
X (6x)
DMN61D8LVTQ
Document number: DS37822 Rev. 2 - 2
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DMN61D8LVTQ
IMPORTANT NOTICE
PRODUCT
INFORMATION
ADVANCED NEW
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2015, Diodes Incorporated
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DMN61D8LVTQ
Document number: DS37822 Rev. 2 - 2
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