NUD3124 Automotive Inductive Load Driver This MicroIntegrationt part provides a single component solution to switch inductive loads such as relays, solenoids, and small DC motors without the need of a free−wheeling diode. It accepts logic level inputs, thus allowing it to be driven by a large variety of devices including logic gates, inverters, and microcontrollers. http://onsemi.com MARKING DIAGRAMS Features 3 • Provides Robust Interface between D.C. Relay Coils and Sensitive • • • • • 1 Logic Capable of Driving Relay Coils Rated up to 150 mA at 12 Volts Replaces 3 or 4 Discrete Components for Lower Cost Internal Zener Eliminates Need for Free−Wheeling Diode Meets Load Dump and other Automotive Specs Pb−Free Packages are Available 2 JW6 MG G JW6 = Specific Device Code M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) Typical Applications SC−74 CASE 318F STYLE 7 6 • Automotive and Industrial Environment • Drives Window, Latch, Door, and Antenna Relays 1 JW6 MG G JW6 = Specific Device Code M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) Benefits • • • • SOT−23 CASE 318 STYLE 21 Reduced PCB Space Standardized Driver for Wide Range of Relays Simplifies Circuit Design and PCB Layout Compliance with Automotive Specifications ORDERING INFORMATION Device NUD3124LT1 NUD3124LT1G NUD3124DMT1 Package Shipping† SOT−23 SOT−23 (Pb−Free) 3000/Tape & Reel SC−74 3000/Tape & Reel SC−74 NUD3124DMT1G (Pb−Free) 3000/Tape & Reel 3000/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. INTERNAL CIRCUIT DIAGRAMS Drain (3) Gate (1) Gate (2) 10 k 100 K 10 k 10 k Source (1) CASE 318 © Semiconductor Components Industries, LLC, 2005 Gate (5) 100 K 100 K Source (2) November, 2005 − Rev. 10 Drain (3) Drain (6) Source (4) CASE 318F 1 Publication Order Number: NUD3124/D NUD3124 MAXIMUM RATINGS (TJ = 25°C unless otherwise specified) Rating Symbol Value Unit VDSS Drain−to−Source Voltage – Continuous (TJ = 125°C) 28 V VGSS Gate−to−Source Voltage – Continuous (TJ = 125°C) 12 V ID Drain Current – Continuous (TJ = 125°C) 150 mA EZ Single Pulse Drain−to−Source Avalanche Energy (For Relay’s Coils/Inductive Loads of 80 W or Higher) (TJ Initial = 85°C) 250 mJ PPK Peak Power Dissipation, Drain−to−Source (Notes 1 and 2) (TJ Initial = 85°C) 20 W ELD1 Load Dump Suppressed Pulse, Drain−to−Source (Notes 3 and 4) (Suppressed Waveform: Vs = 45 V, RSOURCE = 0.5 W, T = 200 ms) (For Relay’s Coils/Inductive Loads of 80 W or Higher) (TJ Initial = 85°C) 80 V ELD2 Inductive Switching Transient 1, Drain−to−Source (Waveform: RSOURCE = 10 W, T = 2.0 ms) (For Relay’s Coils/Inductive Loads of 80 W or Higher) (TJ Initial = 85°C) 100 V ELD3 Inductive Switching Transient 2, Drain−to−Source (Waveform: RSOURCE = 4.0 W, T = 50 ms) (For Relay’s Coils/Inductive Loads of 80 W or Higher) (TJ Initial = 85°C) 300 V Rev−Bat Reverse Battery, 10 Minutes (Drain−to−Source) (For Relay’s Coils/Inductive Loads of 80 W or more) −14 V Dual−Volt Dual Voltage Jump Start, 10 Minutes (Drain−to−Source) 28 V 2,000 V ESD Human Body Model (HBM) According to EIA/JESD22/A114 Specification Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. Nonrepetitive current square pulse 1.0 ms duration. 2. For different square pulse durations, see Figure 2. 3. Nonrepetitive load dump suppressed pulse per Figure 3. 4. For relay’s coils/inductive loads higher than 80 W, see Figure 4. THERMAL CHARACTERISTICS Symbol Value Unit TA Operating Ambient Temperature −40 to 125 °C TJ Maximum Junction Temperature 150 °C −65 to 150 °C TSTG Rating Storage Temperature Range PD Total Power Dissipation (Note 5) Derating above 25°C SOT−23 225 1.8 mW mW/°C PD Total Power Dissipation (Note 5) Derating above 25°C SC−74 380 3.0 mW mW/°C SOT−23 SC−74 556 329 °C/W RqJA Thermal Resistance Junction–to–Ambient (Note 5) 5. Mounted onto minimum pad board. http://onsemi.com 2 NUD3124 ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Symbol Min Typ Max Unit VBRDSS 28 34 38 V − − − − − − − − 0.5 1.0 50 80 − − − − − − − − 60 80 90 110 1.3 1.3 1.8 − 2.0 2.0 − − − − − − − − 1.4 1.7 0.8 1.1 150 140 200 − − − gFS − 500 − mmho Input Capacitance (VDS = 12 V, VGS = 0 V, f = 10 kHz) Ciss − 32 − pf Output Capacitance (VDS = 12 V, VGS = 0 V, f = 10 kHz) Coss − 21 − pf Transfer Capacitance (VDS = 12 V, VGS = 0 V, f = 10 kHz) Crss − 8.0 − pf tPHL tPLH − − 890 912 − − tPHL tPLH − − 324 1280 − − tf tr − − 2086 708 − − tf tr − − 556 725 − − Characteristic OFF CHARACTERISTICS Drain to Source Sustaining Voltage (ID = 10 mA) Drain to Source Leakage Current (VDS = 12 V, VGS = 0 V) (VDS = 12 V, VGS = 0 V, TJ = 125°C) (VDS = 28 V, VGS = 0 V) (VDS = 28 V, VGS = 0 V, TJ = 125°C) IDSS Gate Body Leakage Current (VGS = 3.0 V, VDS = 0 V) (VGS = 3.0 V, VDS = 0 V, TJ = 125°C) (VGS = 5.0 V, VDS = 0 V) (VGS = 5.0 V, VDS = 0 V, TJ = 125°C) IGSS mA mA ON CHARACTERISTICS Gate Threshold Voltage (VGS = VDS, ID = 1.0 mA) (VGS = VDS, ID = 1.0 mA, TJ = 125°C) VGS(th) Drain to Source On−Resistance (ID = 150 mA, VGS = 3.0 V) (ID = 150 mA, VGS = 3.0 V, TJ = 125°C) (ID = 150 mA, VGS = 5.0 V) (ID = 150 mA, VGS = 5.0 V, TJ = 125°C) RDS(on) Output Continuous Current (VDS = 0.25 V, VGS = 3.0 V) (VDS = 0.25 V, VGS = 3.0 V, TJ = 125°C) IDS(on) Forward Transconductance (VDS = 12 V, ID = 150 mA) V W mA DYNAMIC CHARACTERISTICS SWITCHING CHARACTERISTICS Propagation Delay Times: High to Low Propagation Delay; Figure 1, (VDS = 12 V, VGS = 3.0 V) Low to High Propagation Delay; Figure 1, (VDS = 12 V, VGS = 3.0 V) High to Low Propagation Delay; Figure 1, (VDS = 12 V, VGS = 5.0 V) Low to High Propagation Delay; Figure 1, (VDS = 12 V, VGS = 5.0 V) Transition Times: Fall Time; Figure 1, (VDS = 12 V, VGS = 3.0 V) Rise Time; Figure 1, (VDS = 12 V, VGS = 3.0 V) ns ns Fall Time; Figure 1, (VDS = 12 V, VGS = 5.0 V) Rise Time; Figure 1, (VDS = 12 V, VGS = 5.0 V) http://onsemi.com 3 NUD3124 TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted) VIH Vin 50% 0V tPHL tPLH VOH 90% Vout 50% 10% VOL tr tf Figure 1. Switching Waveforms Ppk, PEAK SURGE POWER (W) 25 20 15 10 5 0 1 10 100 PW, PULSE WIDTH (ms) Figure 2. Maximum Non−repetitive Surge Power versus Pulse Width Load Dump Pulse Not Suppressed: VR = 13.5 V Nominal ±10% VS = 60 V Nominal ±10% T = 300 ms Nominal ±10% TR = 1 − 10 ms ±10% Load Dump Pulse Suppressed: NOTE: Max. Voltage DUT is exposed to is NOTE: approximately 45 V. VS = 30 V ±20% T = 150 ms ±20% TR 90% 10% of Peak; Reference = VR, IR 10% VR, IR Figure 3. Load Dump Waveform Definition http://onsemi.com 4 VS T NUD3124 14 IDSS, DRAIN LEAKAGE (mA) VS, LOAD DUMP (VOLTS) 140 120 100 80 60 140 170 200 230 260 290 320 350 VDS = 28 V 8 6 4 2 −25 0 25 50 75 100 RELAY’S COIL (W) TJ, JUNCTION TEMPERATURE (°C) Figure 4. Load Dump Capability versus Relay’s Coil dc Resistance Figure 5. Drain−to−Source Leakage versus Junction Temperature 125 34.8 BVDSS BREAKDOWN VOLTAGE (V) 80 IGSS GATE LEAKAGE (mA) 10 0 −50 40 80 110 12 70 60 VGS = 5 V 50 40 VGS = 3 V 30 20 −50 1 −25 0 25 50 100 75 34.6 34.4 34.2 ID = 10 mA 34.0 33.8 33.6 33.4 −50 125 −25 25 0 50 75 100 125 TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C) Figure 6. Gate−to−Source Leakage versus Junction Temperature Figure 7. Breakdown Voltage versus Junction Temperature 1 VGS = 5 V VDS = 0.8 V 0.01 VGS = 3 V VGS = 2.5 V ID DRAIN CURRENT (A) ID DRAIN CURRENT (A) 0.1 VGS = 2 V 1E−04 125 °C 0.01 0.001 85 °C 1E−04 1E−06 1E−08 25 °C 1E−05 VGS = 1 V −40 °C 1E−06 1E−10 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 1E−07 0.5 VDS, DRAIN−TO−SOURCE VOLTAGE (V) 1.0 1.5 2.0 2.5 3.0 3.5 4.0 VGS, GATE−TO−SOURCE VOLTAGE (V) Figure 8. Output Characteristics Figure 9. Transfer Function http://onsemi.com 5 4.5 5.0 1800 ID = 0.25 A VGS = 3.0 V 1600 1400 1200 ID = 0.15 A VGS = 3.0 V 1000 800 ID = 0.15 A VGS = 5.0 V 600 400 −50 −25 0 25 50 100 75 125 TJ, JUNCTION TEMPERATURE (°C) Figure 10. On Resistance Variation versus Junction Temperature RDS(ON), DRAIN−TO−SOURCE RESISTANCE (W) RDS(ON), DRAIN−TO−SOURCE RESISTANCE (mW) NUD3124 0.20 0.18 ID = 250 mA 0.16 0.14 0.12 125 °C 0.10 85 °C 25 °C −40 °C 0.08 0.06 0.04 0.02 0.00 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 VGS, GATE−TO−SOURCE VOLTAGE (V) Figure 11. On Resistance Variation versus Gate−to−Source Voltage VZ ZENER CLAMP VOLTAGE (V) 36.0 35.5 35.0 34.5 34.0 −40 °C 25 °C 85 °C 33.5 33.0 125 °C 32.5 32.0 0.1 1.0 10 100 1000 IZ, ZENER CURRENT (mA) Figure 12. Zener Clamp Voltage versus Zener Current r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1.0 D = 0.5 0.2 0.1 0.1 0.05 Pd(pk) 0.02 0.01 0.01 0.001 0.01 PW t1 t2 DUTY CYCLE = t1/t2 SINGLE PULSE 0.1 PERIOD 1.0 10 100 1000 10,000 t1, PULSE WIDTH (ms) Figure 13. Transient Thermal Response for NUD3124LT1 http://onsemi.com 6 100,000 1,000,000 NUD3124 APPLICATIONS INFORMATION 12 V Battery − + NC NO Relay, Vibrator, or Inductive Load Drain (3) Gate (1) Micro Processor Signal for Relay 10 k 100 K NUD3124 Source (2) Figure 14. Applications Diagram http://onsemi.com 7 NUD3124 PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AN NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318−01 THRU −07 AND −09 OBSOLETE, NEW STANDARD 318−08. D SEE VIEW C 3 HE E c 1 DIM A A1 b c D E e L L1 HE 2 b 0.25 e q A L A1 MIN 0.89 0.01 0.37 0.09 2.80 1.20 1.78 0.10 0.35 2.10 MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.13 0.18 2.90 3.04 1.30 1.40 1.90 2.04 0.20 0.30 0.54 0.69 2.40 2.64 STYLE 21: PIN 1. GATE 2. SOURCE 3. DRAIN L1 VIEW C SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 0.8 0.031 SCALE 10:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 8 MIN 0.035 0.001 0.015 0.003 0.110 0.047 0.070 0.004 0.014 0.083 INCHES NOM 0.040 0.002 0.018 0.005 0.114 0.051 0.075 0.008 0.021 0.094 MAX 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.012 0.029 0.104 NUD3124 PACKAGE DIMENSIONS SC−74 CASE 318F−05 ISSUE L NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318F−01, −02, −03 OBSOLETE. NEW STANDARD 318F−04. D 6 5 4 2 3 E HE 1 DIM A A1 b c D E e L HE q b e C A 0.05 (0.002) q L A1 MIN 0.90 0.01 0.25 0.10 2.90 1.30 0.85 0.20 2.50 0° MILLIMETERS NOM MAX 1.00 1.10 0.06 0.10 0.37 0.50 0.18 0.26 3.00 3.10 1.50 1.70 0.95 1.05 0.40 0.60 2.75 3.00 10° − MIN 0.035 0.001 0.010 0.004 0.114 0.051 0.034 0.008 0.099 0° INCHES NOM 0.039 0.002 0.015 0.007 0.118 0.059 0.037 0.016 0.108 − MAX 0.043 0.004 0.020 0.010 0.122 0.067 0.041 0.024 0.118 10° STYLE 7: PIN 1. SOURCE 1 2. GATE 1 3. DRAIN 2 4. SOURCE 2 5. GATE 2 6. DRAIN 1 SOLDERING FOOTPRINT* 2.4 0.094 0.95 0.037 1.9 0.074 0.95 0.037 0.7 0.028 1.0 0.039 SCALE 10:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. MicroIntegration is a trademark of Semiconductor Components Industries, LLC (SCILLC) ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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