ETC NUD3124/D

NUD3124
Automotive Inductive Load
Driver
This MicroIntegration part provides a single component solution
to switch inductive loads such as relays, solenoids, and small DC
motors without the need of a free−wheeling diode. It accepts logic
level inputs, thus allowing it to be driven by a large variety of devices
including logic gates, inverters, and microcontrollers.
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Features
• Provides Robust Interface between D.C. Relay Coils and Sensitive
•
•
•
•
MARKING DIAGRAMS
Logic
Capable of Driving Relay Coils Rated up to 150 mA at 12 Volts
Replaces 3 or 4 Discrete Components for Lower Cost
Internal Zener Eliminates Need for Free−Wheeling Diode
Meets Load Dump and other Automotive Specs
3
JW6 D
1
2
SOT−23
CASE 318
STYLE 21
Typical Applications
JW6 = Specific Device Code
D
= Date Code
• Automotive and Industrial Environment
• Drives Window, Latch, Door, and Antenna Relays
JW6 D
6
Benefits
•
•
•
•
1
Reduced PCB Space
Standardized Driver for Wide Range of Relays
Simplifies Circuit Design and PCB Layout
Compliance with Automotive Specifications
SC−74
CASE 318F
STYLE 7
JW6 = Specific Device Code
D
= Date Code
INTERNAL CIRCUIT DIAGRAMS
Drain (3)
Gate (1)
Gate (2)
10 k
100 K
Drain (3)
Drain (6)
100 K
100 K
Source (2)
Source (4)
Source (1)
CASE 318
Gate (5)
10 k
10 k
CASE 318F
ORDERING INFORMATION
Device
NUD3124LT1
NUD3124DMT1
 Semiconductor Components Industries, LLC, 2003
August, 2003 − Rev. 5
1
Package
Shipping
SOT−23
3000/Tape & Reel
SC−74
3000/Tape & Reel
Publication Order Number:
NUD3124/D
NUD3124
MAXIMUM RATINGS (TJ = 25°C unless otherwise specified)
Symbol
Value
Unit
VDSS
Drain−to−Source Voltage – Continuous
(TJ = 125°C)
28
V
VGSS
Gate−to−Source Voltage – Continuous
(TJ = 125°C)
12
V
ID
Drain Current – Continuous
(TJ = 125°C)
150
mA
EZ
Single Pulse Drain−to−Source Avalanche Energy
(For Relay’s Coils/Inductive Loads of 80 or Higher)
(TJ Initial = 85°C)
250
mJ
PPK
Peak Power Dissipation, Drain−to−Source (Notes 1 and 2)
(TJ Initial = 85°C)
20
W
ELD1
Load Dump Suppressed Pulse, Drain−to−Source (Notes 3 and 4)
(Suppressed Waveform: Vs = 45 V, RSOURCE = 0.5 , T = 200 ms)
(For Relay’s Coils/Inductive Loads of 80 or Higher)
(TJ Initial = 85°C)
80
V
ELD2
Inductive Switching Transient 1, Drain−to−Source
(Waveform: RSOURCE = 10 , T = 2.0 ms)
(For Relay’s Coils/Inductive Loads of 80 or Higher)
(TJ Initial = 85°C)
100
V
ELD3
Inductive Switching Transient 2, Drain−to−Source
(Waveform: RSOURCE = 4.0 , T = 50 s)
(For Relay’s Coils/Inductive Loads of 80 or Higher)
(TJ Initial = 85°C)
300
V
Rev−Bat
Reverse Battery, 10 Minutes (Drain−to−Source)
(For Relay’s Coils/Inductive Loads of 80 or more)
−14
V
Dual−Volt
Dual Voltage Jump Start, 10 Minutes (Drain−to−Source)
28
V
2,000
V
Value
Unit
ESD
1.
2.
3.
4.
Rating
Human Body Model (HBM)
According to EIA/JESD22/A114 Specification
Nonrepetitive current square pulse 1.0 ms duration.
For different square pulse durations, see Figure 2.
Nonrepetitive load dump suppressed pulse per Figure 3.
For relay’s coils/inductive loads higher than 80 , see Figure 4.
THERMAL CHARACTERISTICS
Symbol
Rating
TA
Operating Ambient Temperature
−40 to 125
°C
TJ
Maximum Junction Temperature
150
°C
−65 to 150
°C
TSTG
Storage Temperature Range
PD
Total Power Dissipation (Note 5)
Derating above 25°C
SOT−23
225
1.8
mW
mW/°C
PD
Total Power Dissipation (Note 5)
Derating above 25°C
SC−74
380
1.5
mW
mW/°C
SOT−23
SC−74
556
329
°C/W
RJA
Thermal Resistance Junction–to–Ambient (Note 5)
5. Mounted onto minimum pad board.
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2
NUD3124
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Characteristic
Symbol
Min
Typ
Max
Unit
VBRDSS
28
34
38
V
−
−
−
−
−
−
−
−
0.5
1.0
50
80
−
−
−
−
−
−
−
−
60
80
90
110
1.3
1.3
1.8
−
2.0
2.0
−
−
−
−
−
−
−
−
1.4
1.7
0.8
1.1
150
140
200
−
−
−
gFS
−
500
−
mmho
Input Capacitance
(VDS = 12 V, VGS = 0 V, f = 10 kHz)
Ciss
−
32
−
pf
Output Capacitance
(VDS = 12 V, VGS = 0 V, f = 10 kHz)
Coss
−
21
−
pf
Transfer Capacitance
(VDS = 12 V, VGS = 0 V, f = 10 kHz)
Crss
−
8.0
−
pf
tPHL
tPLH
−
−
890
912
−
−
tPHL
tPLH
−
−
324
1280
−
−
tf
tr
−
−
2086
708
−
−
tf
tr
−
−
556
725
−
−
OFF CHARACTERISTICS
Drain to Source Sustaining Voltage
(ID = 10 mA)
Drain to Source Leakage Current
(VDS = 12 V, VGS = 0 V)
(VDS = 12 V, VGS = 0 V, TJ = 125°C)
(VDS = 28 V, VGS = 0 V)
(VDS = 28 V, VGS = 0 V, TJ = 125°C)
IDSS
Gate Body Leakage Current
(VGS = 3.0 V, VDS = 0 V)
(VGS = 3.0 V, VDS = 0 V, TJ = 125°C)
(VGS = 5.0 V, VDS = 0 V)
(VGS = 5.0 V, VDS = 0 V, TJ = 125°C)
IGSS
A
A
ON CHARACTERISTICS
Gate Threshold Voltage
(VGS = VDS, ID = 1.0 mA)
(VGS = VDS, ID = 1.0 mA, TJ = 125°C)
VGS(th)
Drain to Source On−Resistance
(ID = 150 mA, VGS = 3.0 V)
(ID = 150 mA, VGS = 3.0 V, TJ = 125°C)
(ID = 150 mA, VGS = 5.0 V)
(ID = 150 mA, VGS = 5.0 V, TJ = 125°C)
RDS(on)
Output Continuous Current
(VDS = 0.25 V, VGS = 3.0 V)
(VDS = 0.25 V, VGS = 3.0 V, TJ = 125°C)
IDS(on)
Forward Transconductance
(VDS = 12 V, ID = 150 mA)
V
mA
DYNAMIC CHARACTERISTICS
SWITCHING CHARACTERISTICS
Propagation Delay Times:
High to Low Propagation Delay; Figure 1, (VDS = 12 V, VGS = 3.0 V)
Low to High Propagation Delay; Figure 1, (VDS = 12 V, VGS = 3.0 V)
High to Low Propagation Delay; Figure 1, (VDS = 12 V, VGS = 5.0 V)
Low to High Propagation Delay; Figure 1, (VDS = 12 V, VGS = 5.0 V)
Transition Times:
Fall Time; Figure 1, (VDS = 12 V, VGS = 3.0 V)
Rise Time; Figure 1, (VDS = 12 V, VGS = 3.0 V)
ns
ns
Fall Time; Figure 1, (VDS = 12 V, VGS = 5.0 V)
Rise Time; Figure 1, (VDS = 12 V, VGS = 5.0 V)
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NUD3124
TYPICAL PERFORMANCE CURVES
(TJ = 25°C unless otherwise noted)
VCC
Vin
50%
GND
tPLH
tPHL
VZ
VCC
90%
50%
10%
Vout
GND
tr
tf
Figure 1. Switching Waveforms
Ppk, PEAK SURGE POWER (W)
25
20
15
10
5
0
1
10
100
PW, PULSE WIDTH (ms)
Figure 2. Maximum Non−repetitive Surge
Power versus Pulse Width
Load Dump Pulse Not Suppressed:
VR = 13.5 V Nominal ±10%
VS = 60 V Nominal ±10%
T = 300 ms Nominal ±10%
TR = 1 − 10 ms ±10%
Load Dump Pulse Suppressed:
NOTE: Max. Voltage DUT is exposed to is
NOTE: approximately 45 V.
VS = 30 V ±20%
T = 150 ms ±20%
TR
90%
10% of Peak;
Reference = VR, IR
10%
VR, IR
Figure 3. Load Dump Waveform Definition
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4
VS
T
NUD3124
14
IDSS, DRAIN LEAKAGE (A)
VS, LOAD DUMP (VOLTS)
140
120
100
80
60
140
170
200
230
260
290
320 350
VDS = 28 V
8
6
4
2
−25
0
25
50
100
75
RELAY’S COIL ()
TJ, JUNCTION TEMPERATURE (°C)
Figure 4. Load Dump Capability versus
Relay’s Coil dc Resistance
Figure 5. Drain−to−Source Leakage versus
Junction Temperature
125
34.8
BVDSS BREAKDOWN VOLTAGE (V)
80
IGSS GATE LEAKAGE (A)
10
0
−50
40
80 110
12
70
60
VGS = 5 V
50
40
VGS = 3 V
30
20
−50
1
−25
0
25
75
50
100
34.6
34.4
34.2
ID = 10 mA
34.0
33.8
33.6
33.4
−50
125
−25
25
0
50
75
100
125
TJ, JUNCTION TEMPERATURE (°C)
TJ, JUNCTION TEMPERATURE (°C)
Figure 6. Gate−to−Source Leakage versus
Junction Temperature
Figure 7. Breakdown Voltage versus Junction
Temperature
1
VGS = 5 V
VGS = 3 V
VGS = 2.5 V
ID DRAIN CURRENT (A)
ID DRAIN CURRENT (A)
0.1
0.01
VGS = 2 V
1E−04
125 °C
0.01
0.001
85 °C
1E−04
1E−06
1E−08
25 °C
1E−05
VGS = 1 V
−40 °C
1E−06
1E−10
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
1E−07
0.5
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
1.0
1.5
2.0
2.5
3.0
3.5
4.0
VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 8. Output Characteristics
Figure 9. Transfer Function
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5
4.5
5.0
1800
ID = 0.25 A
VGS = 3.0 V
1600
1400
1200
ID = 0.15 A
VGS = 3.0 V
1000
800
ID = 0.15 A
VGS = 5.0 V
600
400
−50
−25
0
25
50
100
75
125
TJ, JUNCTION TEMPERATURE (°C)
Figure 10. On Resistance Variation versus
Junction Temperature
RDS(ON), DRAIN−TO−SOURCE RESISTANCE ()
RDS(ON), DRAIN−TO−SOURCE RESISTANCE (m)
NUD3124
0.20
0.18
ID = 250 A
0.16
0.14
0.12
125 °C
0.10
85 °C
25 °C
−40 °C
0.08
0.06
0.04
0.02
0.00
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 11. On Resistance Variation versus
Gate−to−Source Voltage
VZ ZENER CLAMP VOLTAGE (V)
36.0
35.5
35.0
34.5
34.0
−40 °C
25 °C
85 °C
33.5
33.0
125 °C
32.5
32.0
0.1
1.0
10
100
1000
IZ, ZENER CURRENT (mA)
Figure 12. Zener Clamp Voltage versus Zener
Current
r(t), TRANSIENT THERMAL
RESISTANCE (NORMALIZED)
1.0
D = 0.5
0.2
0.1
0.1
0.05
Pd(pk)
0.02
0.01
0.01
0.001
0.01
PW
t1
t2
DUTY CYCLE = t1/t2
SINGLE PULSE
0.1
PERIOD
1.0
10
100
1000
10,000
t1, PULSE WIDTH (ms)
Figure 13. Transient Thermal Response for NUD3124LT1
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100,000
1,000,000
NUD3124
APPLICATIONS INFORMATION
12 V Battery
−
+
NC
NO
Relay, Vibrator,
or
Inductive Load
Drain (3)
Gate (1)
Micro
Processor
Signal
for
Relay
10 k
100 K
NUD3124
Source (2)
Figure 14. Applications Diagram
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NUD3124
INFORMATION FOR USING THE SOT−23 SURFACE MOUNT PACKAGE
MINIMUM RECOMMENDED FOOTPRINT FOR
SURFACE MOUNTED APPLICATIONS
Surface mount board layout is a critical portion of the total
design. The footprint for the semiconductor packages must
be the correct size to insure proper solder connection
interface between the board and the package. With the
correct pad geometry, the packages will self align when
subjected to a solder reflow process.
The 556°C/W for the SOT−23 package assumes the use of
the recommended footprint on a glass epoxy printed circuit
board to achieve a power dissipation of 225 milliwatts.
There are other alternatives to achieving higher power
dissipation from the SOT−23 package. Another alternative
would be to use a ceramic substrate or an aluminum core
board such as Thermal Clad. Using a board material such
as Thermal Clad, an aluminum core board, the power
dissipation can be doubled using the same footprint.
0.037
0.95
0.037
0.95
SOLDERING PRECAUTIONS
The melting temperature of solder is higher than the rated
temperature of the device. When the entire device is heated
to a high temperature, failure to complete soldering within
a short time could result in device failure. Therefore, the
following items should always be observed in order to
minimize the thermal stress to which the devices are
subjected.
• Always preheat the device.
• The delta temperature between the preheat and
soldering should be 100°C or less.*
• When preheating and soldering, the temperature of the
leads and the case must not exceed the maximum
temperature ratings as shown on the data sheet. When
using infrared heating with the reflow soldering
method, the difference should be a maximum of 10°C.
• The soldering temperature and time should not exceed
260°C for more than 10 seconds.
• When shifting from preheating to soldering, the
maximum temperature gradient should be 5°C or less.
• After soldering has been completed, the device should
be allowed to cool naturally for at least three minutes.
Gradual cooling should be used as the use of forced
cooling will increase the temperature gradient and
result in latent failure due to mechanical stress.
• Mechanical stress or shock should not be applied
during cooling
0.079
2.0
0.035
0.9
0.031
0.8
inches
mm
SOT−23
SOT−23 POWER DISSIPATION
The power dissipation of the SOT−23 is a function of the
pad size. This can vary from the minimum pad size for
soldering to a pad size given for maximum power
dissipation. Power dissipation for a surface mount device is
determined by TJ(max), the maximum rated junction
temperature of the die, RJA, the thermal resistance from the
device junction to ambient, and the operating temperature,
TA. Using the values provided on the data sheet for the
SOT−23 package, PD can be calculated as follows:
PD =
TJ(max) − TA
RJA
The values for the equation are found in the maximum
ratings table on the data sheet. Substituting these values into
the equation for an ambient temperature TA of 25°C, one can
calculate the power dissipation of the device which in this
case is 225 milliwatts.
PD =
150°C − 25°C
556°C/W
* Soldering a device without preheating can cause
excessive thermal shock and stress which can result in
damage to the device.
= 225 milliwatts
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NUD3124
INFORMATION FOR USING THE SC-74 SURFACE MOUNT PACKAGE
MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS
Surface mount board layout is a critical portion of the
total design. The footprint for the semiconductor packages
must be the correct size to ensure proper solder connection
interface between the board and the package. With the
correct pad geometry, the packages will self-align when
subjected to a solder reflow process.
0.094
2.4
0.037
0.95
0.074
1.9
0.037
0.95
0.028
0.7
0.039
1.0
inches
mm
SC-74
SC-74 POWER DISSIPATION
one can calculate the power dissipation of the device which
in this case is 380 milliwatts.
The power dissipation of the SC-74 is a function of the
pad size. This can vary from the minimum pad size for
soldering to a pad size given for maximum power
dissipation. Power dissipation for a surface mount device is
determined by TJ(max), the maximum rated junction
temperature of the die, RθJA, the thermal resistance from
the device junction to ambient, and the operating
temperature, TA. Using the values provided on the data
sheet for the SC-74 package, PD can be calculated as
follows:
PD =
PD =
150°C − 25°C
= 380 milliwatts
329°C/W
The 329°C/W for the SC-74 package assumes the use of
the recommended footprint on a glass epoxy printed circuit
board to achieve a power dissipation of 380 milliwatts.
There are other alternatives to achieving higher power
dissipation from the SC-74 package. Another alternative
would be to use a ceramic substrate or an aluminum core
board such as Thermal Clad. Using a board material such
as Thermal Clad, an aluminum core board, the power
dissipation can be doubled using the same footprint.
TJ(max) − TA
RθJA
The values for the equation are found in the maximum
ratings table on the data sheet. Substituting these values
into the equation for an ambient temperature TA of 25°C,
SOLDER STENCIL GUIDELINES
SC-59, SC-74, SC-70/SOT-323, SOD-123, SOT-23,
SOT-143, SOT-223, SO-8, SO-14, SO-16, and SMB/SMC
diode packages, the stencil opening should be the same as
the pad size or a 1:1 registration.
Prior to placing surface mount components onto a printed
circuit board, solder paste must be applied to the pads.
Solder stencils are used to screen the optimum amount.
These stencils are typically 0.008 inches thick and may be
made of brass or stainless steel. For packages such as the
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NUD3124
SOLDERING PRECAUTIONS
• The soldering temperature and time should not exceed
260°C for more than 10 seconds.
• When shifting from preheating to soldering, the
maximum temperature gradient should be 5°C or less.
• After soldering has been completed, the device should
be allowed to cool naturally for at least three minutes.
Gradual cooling should be used since the use of forced
cooling will increase the temperature gradient and will
result in latent failure due to mechanical stress.
• Mechanical stress or shock should not be applied
during cooling.
The melting temperature of solder is higher than the rated
temperature of the device. When the entire device is heated
to a high temperature, failure to complete soldering within
a short time could result in device failure. Therefore, the
following items should always be observed in order to
minimize the thermal stress to which the devices are
subjected.
• Always preheat the device.
• The delta temperature between the preheat and
soldering should be 100°C or less.*
• When preheating and soldering, the temperature of the
leads and the case must not exceed the maximum
temperature ratings as shown on the data sheet. When
using infrared heating with the reflow soldering
method, the difference should be a maximum of 10°C.
* Soldering a device without preheating can cause excessive
thermal shock and stress which can result in damage to the
device.
TYPICAL SOLDER HEATING PROFILE
temperature versus time. The line on the graph shows the
actual temperature that might be experienced on the surface
of a test board at or near a central solder joint. The two
profiles are based on a high density and a low density
board. The Vitronics SMD310 convection/infrared reflow
soldering system was used to generate this profile. The type
of solder used was 62/36/2 Tin Lead Silver with a melting
point between 177 −189°C. When this type of furnace is
used for solder reflow work, the circuit boards and solder
joints tend to heat first. The components on the board are
then heated by conduction. The circuit board, because it has
a large surface area, absorbs the thermal energy more
efficiently, then distributes this energy to the components.
Because of this effect, the main body of a component may
be up to 30 degrees cooler than the adjacent solder joints.
For any given circuit board, there will be a group of
control settings that will give the desired heat pattern. The
operator must set temperatures for several heating zones
and a figure for belt speed. Taken together, these control
settings make up a heating “profile” for that particular
circuit board. On machines controlled by a computer, the
computer remembers these profiles from one operating
session to the next. Figure 15 shows a typical heating
profile for use when soldering a surface mount device to a
printed circuit board. This profile will vary among
soldering systems, but it is a good starting point. Factors
that can affect the profile include the type of soldering
system in use, density and types of components on the
board, type of solder used, and the type of board or
substrate material being used. This profile shows
STEP 1
PREHEAT
ZONE 1
RAMP"
200°C
STEP 2 STEP 3
VENT
HEATING
SOAK" ZONES 2 & 5
RAMP"
STEP 4
HEATING
ZONES 3 & 6
SOAK"
STEP 5
HEATING
ZONES 4 & 7
SPIKE"
STEP 6
VENT
205° TO 219°C
PEAK AT
SOLDER JOINT
170°C
DESIRED CURVE FOR HIGH
MASS ASSEMBLIES
160°C
150°C
150°C
140°C
100°C
100°C
SOLDER IS LIQUID FOR
40 TO 80 SECONDS
(DEPENDING ON
MASS OF ASSEMBLY)
DESIRED CURVE FOR LOW
MASS ASSEMBLIES
50°C
TIME (3 TO 7 MINUTES TOTAL)
TMAX
Figure 15. Typical Solder Heating Profile
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10
STEP 7
COOLING
NUD3124
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−09
ISSUE AH
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIUMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE
MATERIAL.
4. 318−01, −02, AND −06 OBSOLETE, NEW
STANDARD 318−09.
A
L
3
1
B
2
V
S
DIM
A
B
C
D
G
H
J
K
L
S
V
G
C
H
D
K
J
INCHES
MIN
MAX
0.1102 0.1197
0.0472 0.0551
0.0385 0.0498
0.0140 0.0200
0.0670 0.0826
0.0040 0.0098
0.0034 0.0070
0.0180 0.0236
0.0350 0.0401
0.0830 0.0984
0.0177 0.0236
MILLIMETERS
MIN
MAX
2.80
3.04
1.20
1.40
0.99
1.26
0.36
0.50
1.70
2.10
0.10
0.25
0.085
0.177
0.45
0.60
0.89
1.02
2.10
2.50
0.45
0.60
STYLE 21:
PIN 1. GATE
2. SOURCE
3. DRAIN
SC−74
CASE 318F−04
ISSUE J
NOTES:
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES
LEAD FINISH THICKNESS. MINIMUM
LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. 318F−01, −02, −03 OBSOLETE. NEW
STANDARD 318F−04.
A
L
6
5
4
2
3
B
S
1
D
G
M
J
C
0.05 (0.002)
H
K
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11
DIM
A
B
C
D
G
H
J
K
L
M
S
INCHES
MIN
MAX
0.1142 0.1220
0.0512 0.0669
0.0354 0.0433
0.0098 0.0197
0.0335 0.0413
0.0005 0.0040
0.0040 0.0102
0.0079 0.0236
0.0493 0.0649
0
10 0.0985 0.1181
MILLIMETERS
MIN
MAX
2.90
3.10
1.30
1.70
0.90
1.10
0.25
0.50
0.85
1.05
0.013
0.100
0.10
0.26
0.20
0.60
1.25
1.65
0
10 2.50
3.00
NUD3124
Thermal Clad is a registered trademark of the Bergquist Company
MicroIntegration is a trademark of Semiconductor Components Industries, LLC (SCILLC)
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