DMN6066SSS 60V N-CHANNEL ENHANCEMENT MODE MOSFET ADVANCE INFORMATION Product Summary V(BR)DSS 60V Features and Benefits ID RDS(on) TA = +25°C 66mΩ @ VGS = 10V 5.0A 97mΩ @ VGS = 4.5V 4.1A • Low on-resistance • Fast switching speed • • • • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability PPAP Capable (Note 4) Description and Applications Mechanical Data This MOSFET is designed to minimize the on-state resistance and yet maintain superior switching performance, making it ideal for high efficiency power management applications. • • • • • • Motor Control • Backlighting • DC-DC Converters • Power Management Functions • Case: SO-8 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals Connections: See Diagram Below Terminals: Finish – Tin Finish Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.074 grams (Approximate) D SO-8 G S Top View Top View Equivalent Circuit Ordering Information (Notes 4 & 5) Part Number DMN6066SSS-13 DMN6066SSSQ-13 Notes: Compliance Commercial Automotive Case SO-8 SO-8 Packaging 2,500/Tape & Reel 2,500/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally the same, except where specified. For more information, please refer to http://www.diodes.com/quality/product_grade_definitions/. 5. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information SO-8 N6066SS YY WW DMN6066SSS Document Number DS33047 Rev. 3 - 2 = Manufacturer’s Marking N6066SS = Product Type Marking Code YYWW = Date Code Marking YY = Year (ex: 09 = 2009) WW = Week (01 - 53) 1 of 9 www.diodes.com April 2015 © Diodes Incorporated DMN6066SSS ADVANCE INFORMATION Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Drain-Source Voltage Gate-Source Voltage Single Pulsed Avalanche Energy Single Pulsed Avalanche Current Continuous Drain Current VGS = 10V Pulsed Drain Current VGS = 10V Continuous Source Current (Body diode) Pulsed Source Current (Body diode) (Note 6) (Note 11) (Note 11) (Note 8) TA = +70°C (Note 8) (Note 7) (Note 9) (Note 8) (Note 9) Symbol VDSS VGS EAS IAS ID IDM IS ISM Value 60 ±20 37.5 5.0 5.0 4.0 3.7 23 4.0 23 Unit V V mJ A Value 1.56 12.5 2.81 22.5 80.0 44.5 37.0 -55 to 150 Unit A A A A Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Power Dissipation Linear Derating Factor Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Lead Operating and Storage Temperature Range Notes: Symbol (Note 7) PD (Note 8) (Note 7) (Note 8) (Note 10) RθJA RθJL TJ, TSTG W mW/°C °C/W °C 6. AEC-Q101 VGS maximum is ±16V. 7. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is measured when operating in a steady-state condition. 8. Same as note (7), except the device is measured at t ≤ 10 sec. 9. Same as note (7), except the device is pulsed with D= 0.02 and pulse width 300 µs. The pulse current is limited by the maximum junction temperature. 10. Thermal resistance from junction to solder-point (at the end of the drain lead). 11. UIS in production with L = 3.0mH, IAS = 5.0A, RG = 25Ω, VDD=50V, starting TJ = +25°C. DMN6066SSS Document Number DS33047 Rev. 3 - 2 2 of 9 www.diodes.com April 2015 © Diodes Incorporated DMN6066SSS 1.6 RDS(on) Limited Max Power Dissipation (W) ID Drain Current (A) 10 1 DC 100m 1s 100ms 10m 10ms Single Pulse T amb=25°C 1m 100m 1ms 100µs 1 10 VDS Drain-Source Voltage (V) 1.4 25mm x 25mm 1oz FR4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0 20 70 T amb=25°C 60 50 D=0.5 40 30 20 Single Pulse D=0.2 D=0.05 10 0 100µ D=0.1 1m 10m 100m 1 10 100 120 140 160 100 1k Single Pulse T amb=25°C 10 1 100µ 1m 10m 100m 1 10 100 1k Pulse Width (s) Transient Thermal Impedance Document Number DS33047 Rev. 3 - 2 80 100 Pulse Width (s) DMN6066SSS 60 Derating Curve Maximum Power (W) 80 40 Temperature (°C) Safe Operating Area Thermal Resistance (°C/W) ADVANCE INFORMATION Thermal Characteristics Pulse Power Dissipation 3 of 9 www.diodes.com April 2015 © Diodes Incorporated DMN6066SSS ADVANCE INFORMATION Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS Symbol Min Typ Max Unit Test Condition Drain-Source Breakdown Voltage BVDSS 60 V ID = 250µA, VGS = 0V Zero Gate Voltage Drain Current IDSS 0.5 µA VDS = 60V, VGS = 0V Gate-Source Leakage IGSS ±100 nA VGS = ±20V, VDS = 0V VGS(th) 1.0 3.0 V ID = 250µA, VDS = VGS Static Drain-Source On-Resistance (Note 12) RDS (ON) Forward Transconductance (Notes 12 & 13) gfs Diode Forward Voltage (Note 12) VSD Reverse Recovery Time (Note 13) trr Reverse Recovery Charge (Note 13) Qrr Input Capacitance ON CHARACTERISTICS Gate Threshold Voltage 0.048 0.066 0.068 0.097 19.2 S VDS = 15V, ID = 6A 0.89 1.15 V IS = 4.5A, VGS = 0V 23 ns 19.7 nC Ciss 502 pF Output Capacitance Coss 45.7 pF Reverse Transfer Capacitance Crss 27.1 pF Total Gate Charge (Note 14) Qg 5.4 nC Total Gate Charge (Note 14) Qg 10.3 nC Gate-Source Charge (Note 14) Qgs 1.7 nC Ω VGS = 10V, ID = 4.5A VGS = 4.5V, ID = 3.5A IS = 2.4A, di/dt = 100A/µs DYNAMIC CHARACTERISTICS (Note 13) Gate-Drain Charge (Note 14) Qgd 3.2 nC Turn-On Delay Time (Note 14) tD(on) 2.7 ns ns Turn-On Rise Time (Note 14) tr 2.4 Turn-Off Delay Time (Note 14) tD(off) 14.7 ns tf 5.4 ns Turn-Off Fall Time (Note 14) Notes: VDS = 30V, VGS = 0V f = 1MHz VGS = 4.5V VGS = 10V VDS = 30V ID = 4.5A VDD = 30V, VGS = 10V ID = 1A, RG ≅ 6.0Ω 12. Measured under pulsed conditions. Pulse width ≤ 300µs; duty cycle ≤ 2%. 13. For design aid only, not subject to production testing. 14. Switching characteristics are independent of operating junction temperatures. DMN6066SSS Document Number DS33047 Rev. 3 - 2 4 of 9 www.diodes.com April 2015 © Diodes Incorporated DMN6066SSS 10V T = 150°C 4.5V 10 ID Drain Current (A) ID Drain Current (A) T = 25°C 4V 3.5V 1 0.1 3V VGS 0.01 0.1 1 1 VGS 2V 2 3 4 5 VGS Gate-Source Voltage (V) Typical Transfer Characteristics Normalised RDS(on) and VGS(th) T = 25°C 0.01 1 10 2.0 VGS = 10V 1.8 ID = 12A 1.6 RDS(on) 1.4 1.2 1.0 0.8 VGS = VDS 0.6 ID = 250uA 0.4 -50 0 VGS(th) 50 100 150 Tj Junction Temperature (°C) Normalised Curves v Temperature 100 3V VGS 10 3.5V 1 4V 4.5V 0.1 10V T = 25°C 0.01 0.01 0.1 1 10 ID Drain Current (A) On-Resistance v Drain Current DMN6066SSS Document Number DS33047 Rev. 3 - 2 ISD Reverse Drain Current (A) ID Drain Current (A) T = 150°C 1 0.1 Output Characteristics 1 1E-3 2.5V VDS Drain-Source Voltage (V) VDS = 10V 0.1 3V 0.1 Output Characteristics 10 4.5V 4V 3.5V 0.01 10 10V 10 VDS Drain-Source Voltage (V) RDS(on) Drain-Source On-Resistance (Ω) ADVANCE INFORMATION Typical Characteristics 10 T = 150°C 1 T = 25°C 0.1 Vgs = 0V 0.01 0.2 0.4 0.6 0.8 1.0 VSD Source-Drain Voltage (V) Source-Drain Diode Forward Voltage 5 of 9 www.diodes.com April 2015 © Diodes Incorporated DMN6066SSS VGS = 0V 600 400 f = 1MHz CISS COSS CRSS 200 0 0.1 1 10 VGS Gate-Source Voltage (V) 10 C Capacitance (pF) ADVANCE INFORMATION Typical Characteristics (continued) 8 6 4 0 VDS - Drain - Source Voltage (V) Capacitance v Drain-Source Voltage DMN6066SSS Document Number DS33047 Rev. 3 - 2 VDS = 30V 2 ID = 4.5A 0 2 4 6 8 10 Q - Charge (nC) Gate-Source Voltage v Gate Charge 6 of 9 www.diodes.com April 2015 © Diodes Incorporated DMN6066SSS Test Circuits Current regulator ADVANCE INFORMATION QG 50k 12V VG QGS Sameas D.U.T QGD VDS IG D.U.T ID VGS Charge Basic gate charge waveform Gate charge test circuit VDS 90% RD VGS VDS RG VDD 10% VGS t d(on) tr t (on) t d(off) tr t (on) Switching time waveforms DMN6066SSS Document Number DS33047 Rev. 3 - 2 Switching time test circuit 7 of 9 www.diodes.com April 2015 © Diodes Incorporated DMN6066SSS Package Outline Dimensions 0.254 ADVANCE INFORMATION Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. E1 E A1 L Gauge Plane Seating Plane Detail ‘A’ 7°~9° h 45° Detail ‘A’ A2 A A3 b e D SO-8 Dim Min Max A 1.75 A1 0.10 0.20 A2 1.30 1.50 A3 0.15 0.25 b 0.3 0.5 D 4.85 4.95 E 5.90 6.10 E1 3.85 3.95 e 1.27 Typ h 0.35 L 0.62 0.82 Θ 0° 8° All Dimensions in mm Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. X C1 C2 Dimensions X Y C1 C2 Value (in mm) 0.60 1.55 5.4 1.27 Y DMN6066SSS Document Number DS33047 Rev. 3 - 2 8 of 9 www.diodes.com April 2015 © Diodes Incorporated DMN6066SSS ADVANCE INFORMATION IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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