DMN6066SSD 60V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET ADVANCE INFORMATION Product Summary V(BR)DSS Features and Benefits RDS(on) ID TA = +25°C 66mΩ @ VGS = 10V 4.4A 97mΩ @ VGS = 4.5V 3.6A 60V Low on-resistance Fast switching speed 100% Unclamped Inductive Switch (UIS) test in production Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability PPAP Capable (Note 4) Description and Applications Mechanical Data This MOSFET is designed to minimize the on-state resistance and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Case: SO-8 Case Material: Molded Plastic, “Green” Molding Compound. Motor Control Moisture Sensitivity: Level 1 per J-STD-020 Backlighting Terminals Connections: See Diagram Below DC-DC Converters Power Management Functions Terminals: Finish - Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.074 grams (Approximate) UL Flammability Classification Rating 94V-0 SO-8 Top View Equivalent Circuit Top View Ordering Information (Notes 4 & 5) Part Number DMN6066SSD-13 DMN6066SSDQ-13 Notes: Compliance Commercial Automotive Case SO-8 SO-8 Packaging 2,500/Tape & Reel 2,500/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally the same, except where specified. For more information, please refer to http://www. diodes.com/quality/product_grade_definitions/. 5. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information SO-8 N6066SD YY WW DMN6066SSD Document Number DS32109 Rev. 4 - 2 = Manufacturer’s Marking N6066SD = Product Type Marking Code YYWW = Date Code Marking YY = Year (ex: 09 = 2009) WW = Week (01 - 53) 1 of 9 www.diodes.com April 2015 © Diodes Incorporated DMN6066SSD ADVANCE INFORMATION Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Drain-Source Voltage Gate-Source Voltage Single Pulsed Avalanche Energy Single Pulsed Avalanche Current Continuous Drain Current VGS = 10V Pulsed Drain Current VGS = 10V Continuous Source Current (Body diode) Pulsed Source Current (Body diode) (Note 6) (Note 13) (Note 13) (Note 8) TA = +70°C (Note 8) (Note 7) (Note 9) (Note 8) (Note 9) Symbol VDSS VGS EAS IAS ID IDM IS ISM Value 60 20 37.5 5.0 4.4 3.5 3.3 17.0 3.2 17.0 Unit V V mJ A Value 1.25 10 1.8 14.3 2.14 17.2 100 70 58 55 -55 to 150 Unit A A A A Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol (Notes 7 & 10) Power Dissipation Linear Derating Factor (Notes 7 & 11) PD (Notes 8 & 10) Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Lead Operating and Storage Temperature Range Notes: (Notes 7 & 10) (Notes 7 & 11) (Notes 8 & 10) (Notes 10 & 12) RJA RJL TJ, TSTG W mW/°C °C/W °C 6. AEC-Q101 VGS maximum is 16V. 7. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is measured when operating in a steady-state condition. 8. Same as note (3), except the device is measured at t 10 sec. 9. Same as note (3), except the device is pulsed with D = 0.02 and pulse width 300µs. The pulse current is limited by the maximum junction temperature. 10. For a dual device with one active die. 11. For a device with two active die running at equal power. 12. Thermal resistance from junction to solder-point (at the end of the drain lead). 13. UIS in production with L = 3.0mH, IAS = 5.0A, RG = 25Ω, VDD = 50V, starting TJ = +25°C. DMN6066SSD Document Number DS32109 Rev. 4 - 2 2 of 9 www.diodes.com April 2015 © Diodes Incorporated DMN6066SSD 2.0 RDS(on) Limited Max Power Dissipation (W) ID Drain Current (A) 10 1 100m DC 1s 100ms 10m 1m 100m 10ms Single Pulse T amb=25°C 1ms 100µs One active die 1 10 VDS Drain-Source Voltage (V) 1.8 1.6 1.4 Two active die 1.2 1.0 0.8 0.6 One active die 0.4 0.2 0.0 0 20 Single Pulse D=0.05 D=0.1 1 10 100 120 140 160 100 1k Single Pulse T amb=25°C One active die 10 1 100µ 1m 10m 100m 1 10 100 1k Pulse Width (s) Transient Thermal Impedance Document Number DS32109 Rev. 4 - 2 80 100 Pulse Width (s) DMN6066SSD 60 Derating Curve Maximum Power (W) 110 T amb=25°C 100 One active die 90 80 70 D=0.5 60 50 40 D=0.2 30 20 10 0 100µ 1m 10m 100m 40 Temperature (°C) Safe Operating Area Thermal Resistance (°C/W) ADVANCE INFORMATION Thermal Characteristics Pulse Power Dissipation 3 of 9 www.diodes.com April 2015 © Diodes Incorporated DMN6066SSD ADVANCE INFORMATION Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS 60 0.5 100 V µA nA ID = 250µA, VGS= 0V VDS= 60V, VGS= 0V VGS= 20V, VDS= 0V VGS(th) 1.0 RDS (ON) Forward Transconductance (Notes 14 & 15) Diode Forward Voltage (Note 14) Reverse recovery time (Note 15) Reverse recovery charge (Note 15) DYNAMIC CHARACTERISTICS (Note 15) Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge (Note 16) Total Gate Charge (Note 16) Gate-Source Charge (Note 16) Gate-Drain Charge (Note 16) Turn-On Delay Time (Note 16) Turn-On Rise Time (Note 16) Turn-Off Delay Time (Note 16) Turn-Off Fall Time (Note 16) gfs VSD trr Qrr 3.0 0.066 0.097 1.15 V Static Drain-Source On-Resistance (Note 14) 0.048 0.068 19.2 0.89 22.2 16.9 S V ns nC ID= 250µA, VDS= VGS VGS= 10V, ID= 4.5A VGS= 4.5V, ID= 3.5A VDS= 15V, ID= 6A IS= 4.5A, VGS= 0V Ciss Coss Crss Qg Qg Qgs Qgd tD(on) tr tD(off) tf 502 45.7 27.1 5.4 10.3 1.7 3.2 2.7 2.4 14.7 5.4 pF pF pF nC nC nC nC ns ns ns ns Notes: Ω Test Condition IS= 1.9A, di/dt= 100A/µs VDS= 30V, VGS= 0V f= 1MHz VGS= 4.5V VGS= 10V VDS= 30V ID= 4.5A VDD= 30V, VGS= 10V ID= 1A, RG 6.0Ω 14. Measured under pulsed conditions. Pulse width 300µs; duty cycle 2%. 15. For design aid only, not subject to production testing. 16. Switching characteristics are independent of operating junction temperatures. DMN6066SSD Document Number DS32109 Rev. 4 - 2 4 of 9 www.diodes.com April 2015 © Diodes Incorporated DMN6066SSD 10V T = 150°C 4.5V 10 ID Drain Current (A) ID Drain Current (A) T = 25°C 4V 3.5V 1 0.1 3V VGS 0.01 3.5V 1 3V 2.5V 0.1 VGS 2V 1 10 0.1 T = 150°C T = 25°C 0.01 1E-3 2 3 4 5 VGS Gate-Source Voltage (V) Typical Transfer Characteristics Normalised R DS(on) and V GS(th) 1 1 10 Output Characteristics VDS = 10V 0.1 1 VDS Drain-Source Voltage (V) Output Characteristics 2.0 VGS = 10V 1.8 ID = 12A 1.6 RDS(on) 1.4 1.2 1.0 0.8 VGS = VDS 0.6 ID = 250uA 0.4 -50 0 VGS(th) 50 100 150 Tj Junction Temperature (°C) Normalised Curves v Temperature 100 3V VGS 10 3.5V 1 4V 4.5V 0.1 10V T = 25°C 0.01 0.01 0.1 1 10 ID Drain Current (A) On-Resistance v Drain Current DMN6066SSD Document Number DS32109 Rev. 4 - 2 ISD Reverse Drain Current (A) ID Drain Current (A) 4.5V 4V 10 VDS Drain-Source Voltage (V) 10 10V 0.01 0.1 RDS(on) Drain-Source On-Resistance () ADVANCE INFORMATION Typical Characteristics 10 T = 150°C 1 T = 25°C 0.1 Vgs = 0V 0.01 0.2 0.4 0.6 0.8 1.0 VSD Source-Drain Voltage (V) Source-Drain Diode Forward Voltage 5 of 9 www.diodes.com April 2015 © Diodes Incorporated DMN6066SSD VGS = 0V 600 400 f = 1MHz CISS COSS CRSS 200 0 0.1 1 10 VGS Gate-Source Voltage (V) 10 C Capacitance (pF) ADVANCE INFORMATION Typical Characteristics (continued) 8 6 4 0 VDS - Drain - Source Voltage (V) Capacitance v Drain-Source Voltage DMN6066SSD Document Number DS32109 Rev. 4 - 2 VDS = 30V 2 ID = 4.5A 0 2 4 6 8 10 Q - Charge (nC) Gate-Source Voltage v Gate Charge 6 of 9 www.diodes.com April 2015 © Diodes Incorporated DMN6066SSD ADVANCE INFORMATION Test Circuits DMN6066SSD Document Number DS32109 Rev. 4 - 2 7 of 9 www.diodes.com April 2015 © Diodes Incorporated DMN6066SSD Package Outline Dimensions 0.254 ADVANCE INFORMATION Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. E1 E A1 L Gauge Plane Seating Plane Detail ‘A’ 7°~9° h 45° Detail ‘A’ A2 A A3 b e D SO-8 Dim Min Max A 1.75 A1 0.10 0.20 A2 1.30 1.50 A3 0.15 0.25 b 0.3 0.5 D 4.85 4.95 E 5.90 6.10 E1 3.85 3.95 e 1.27 Typ h 0.35 L 0.62 0.82 Θ 0 8 All Dimensions in mm Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. X C1 C2 Dimensions X Y C1 C2 Value (in mm) 0.60 1.55 5.4 1.27 Y DMN6066SSD Document Number DS32109 Rev. 4 - 2 8 of 9 www.diodes.com April 2015 © Diodes Incorporated DMN6066SSD ADVANCE INFORMATION IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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