UNISONIC TECHNOLOGIES CO., LTD UD6604-H Power MOSFET 20V COMPLEMENTARY MOSFET DESCRIPTION The UTC UD6604-H is a 20V complementary MOSFET, it uses UTC’s advanced technology to provide the customers a minimum on state resistance, etc. The UTC UD6604-H is suitable for load switch and battery protection applications. FEATURES * 3.4A, 20V, RDS(ON) < 36 mΩ @ VGS=4.5V, ID=3.4A RDS(ON) < 45 mΩ @ VGS=2.5V, ID=3A RDS(ON) < 55 mΩ @ VGS=1.8V, ID=2A -2.5A, -20V, RDS(ON) < 66mΩ @ VGS=-4.5V, ID=-2.5A RDS(ON) < 83 mΩ @ VGS=-2.5V, ID=-2A RDS(ON) < 93 mΩ @ VGS=-1.8V, ID=-1A * Low RDS(ON) SYMBOL ORDERING INFORMATION Ordering Number Note: UD6604G-AG6-R Pin Assignment: G: Gate D: Drain Package SOT-26 Pin Assignment 1 2 3 4 5 6 G1 S2 G2 D2 S1 D1 Packing Tape Reel S: Source www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd 1 of 11 QW-R211-026.C UD6604-H Power MOSFET MARKING UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 11 QW-R211-026.C UD6604-H Power MOSFET ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted) RATINGS UNIT N-CHANNEL P-CHANNEL Drain-Source Voltage VDSS 20 -20 V Gate-Source Voltage VGSS ±8 ±8 V TA=25°C 3.4 -2.5 A ID Continuous Drain Current TA=70°C 2.5 -2 A Pulsed Drain Current (Note 3) IDM 13 -13 A TA=25°C 1.1 1.1 W Power Dissipation (Note 2) PD TA=70°C 0.7 0.7 W Operating Temperature Range TJ -55~150 °C Storage Temperature Range TSTG -55~150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. PARAMETER SYMBOL THERMAL CHARACTERISTICS PARAMETER Junction-to-Ambient (Note 1) Junction-to-Ambient (Note 1, 4) SYMBOL t ≤10s Steady-State UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw θJA TYP 78 106 MAX 110 150 UNIT °C/W °C/W 3 of 11 QW-R211-026.C UD6604-H Power MOSFET ELECTRICAL CHARACTERISTICS (TJ=25°C unless otherwise noted) N-CHANNEL PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage Current Forward Reverse ON CHARACTERISTICS Gate Threshold Voltage On State Drain Current Static Drain-Source On-State Resistance SYMBOL BVDSS IDSS IGSS VGS(TH) ID(ON) RDS(ON) TEST CONDITIONS MIN TYP MAX UNIT ID=250µA, VGS=0V VDS=20V, VGS=0V VDS=20V, VGS=0V, TJ=55°C VGS=+8V, VDS=0V VGS=-8V, VDS=0V 20 VDS=VGS, ID=250µA VGS=4.5V, VDS=5V VGS=4.5V, ID=3.4A VGS=4.5V, ID=3.4A, TJ=125°C VGS=2.5V, ID=3A VGS=1.8V, ID=2A VDS=5V, ID=3.4A 0.4 13 1 5 +100 -100 0.7 1 36 85 45 55 V µA µA nA nA V A mΩ mΩ mΩ mΩ S Forward Transconductance gFS 16 DYNAMIC PARAMETERS Input Capacitance CISS 315 pF VGS=0V, VDS=15V, f=1.0MHz Output Capacitance COSS 50 pF Reverse Transfer Capacitance CRSS 40 pF SWITCHING PARAMETERS Turn-ON Delay Time tD(ON) 2.9 ns Turn-ON Rise Time tR 8.4 ns VDS=10V, VGS=4.5V, ID=1A RG=25Ω Turn-OFF Delay Time tD(OFF) 19.2 ns Turn-OFF Fall-Time tF 5.6 ns Total Gate Charge QG 5.8 nC VGS=4.5V, VDS=10V, ID=4A Gate to Source Charge QGS 0.6 nC Gate to Drain Charge QGD 1.5 nC SOURCE TO DRAIN DIODE SPECIFICATIONS Diode Forward Voltage VSD IS=1A, VGS=0V 0.7 1 V Maximum Body-Diode Continuous Current IS 1.5 A Body Diode Reverse Recovery Time trr 14 19 ns IF=3.4A, dI/dt=100A/µs Body Diode Reverse Recovery Charge Qrr 3.8 nC Notes: 1. The value of θJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The value in any given application depends on the user's specific board design. 2. The power dissipation PD is based on TJ(MAX)=150°C, using≤10s junction-to-ambient thermal resistance. 3. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial TJ=25°C. 4. The θJA is the sum of the thermal impedence from junction to lead θJL and lead to ambient. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 11 QW-R211-026.C UD6604-H Power MOSFET ELECTRICAL CHARACTERISTICS (TJ=25°C unless otherwise noted) P-CHANNEL PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage Current ON CHARACTERISTICS Gate Threshold Voltage On State Drain Current Forward Reverse Static Drain-Source On-State Resistance SYMBOL BVDSS IDSS IGSS VGS(TH) ID(ON) RDS(ON) TEST CONDITIONS MIN TYP MAX UNIT ID=-250µA, VGS=0V VDS=-20V, VGS=0V VDS=-20V, VGS=0V, TJ=55°C VGS=+8V, VDS=0V VGS=-8V, VDS=0V -20 VDS=VGS, ID=-250µA VGS=-4.5V, VDS=-5V VGS=-4.5V, ID=-2.5A VGS=-4.5V, ID=-2.5A, TJ=125°C VGS=-2.5V, ID=-2A VGS=-1.8V, ID=-1A VDS=-5V, ID=-2.5A -0.4 -0.65 -13 -1 -5 +100 -100 -1 66 105 83 93 V µA µA nA nA V A mΩ mΩ mΩ mΩ S Forward Transconductance gFS 13 DYNAMIC PARAMETERS Input Capacitance CISS 515 pF VGS=0V, VDS=-10V, f=1.0MHz Output Capacitance COSS 55 pF Reverse Transfer Capacitance CRSS 20 pF SWITCHING PARAMETERS Turn-ON Delay Time tD(ON) 5 ns Turn-ON Rise Time tR 17.4 ns VDS=-10V, VGS=-4.5V, ID=1A RG=25Ω Turn-OFF Delay Time tD(OFF) 40.7 ns Turn-OFF Fall-Time tF 11.4 ns Total Gate Charge QG 6.4 nC VGS=-4.5V, VDS=-10V, ID=-3A Gate to Source Charge QGS 0.9 nC Gate to Drain Charge QGD 1.6 nC SOURCE TO DRAIN DIODE SPECIFICATIONS Diode Forward Voltage VSD IS=-1A, VGS=0V -0.7 -1 V Maximum Body-Diode Continuous Current IS -1.5 A Body Diode Reverse Recovery Time trr 37 49 ns IF=-2.5A, dI/dt=100A/µs Body Diode Reverse Recovery Charge Qrr 27 nC Notes: 1. The value of θJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The value in any given application depends on the user's specific board design. 2. The power dissipation PD is based on TJ(MAX)=150°C, using≤10s junction-to-ambient thermal resistance. 3. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial TJ=25°C. 4. The θJA is the sum of the thermal impedence from junction to lead θJL and lead to ambient. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 11 QW-R211-026.C UD6604-H Power MOSFET TEST CIRCUITS AND WAVEFORMS N-CHANNEL 2 EAS= 1 2 LIAS VDS RG BVDSS BVDSS-VDD BVDSS ID L IAS 10V ID(t) DUT tP VDD VDD VDS(t) tP Unclamped Inductive Switching Test Circuit UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Time Unclamped Inductive Switching Waveforms 6 of 11 QW-R211-026.C UD6604-H Power MOSFET TEST CIRCUITS AND WAVEFORMS (Cont.) + DUT VDS RG L ISD VGS VDD Driver Same Type as DUT dv/dt controlled by RG ISD controlled by pulse period VGS (Driver) D= Gate Pulse Width Gate Pulse Period 10V IFM, Body Diode Forward Current ISD (DUT) di/dt IRM Body Diode Reverse Current VDS (DUT) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop Peak Diode Recovery dv/dt Test Circuit and Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 7 of 11 QW-R211-026.C UD6604-H Power MOSFET TEST CIRCUITS AND WAVEFORMS (Cont.) P-CHANNEL VGS Same Type as DUT 12V QG -10V 200nF 50kΩ VDS 300nF QGS QGD VGS DUT -3mA Charge Gate Charge Test Circuit Gate Charge Waveforms 2 EAS= 1 2 LIAS VDS RG BVDSS BVDSS-VDD BVDSS ID L IAS -10V ID(t) DUT tP VDD VDD VDS(t) tP Unclamped Inductive Switching Test Circuit UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Time Unclamped Inductive Switching Waveforms 8 of 11 QW-R211-026.C UD6604-H Power MOSFET TEST CIRCUITS AND WAVEFORMS (Cont.) + DUT VDS RG L ISD VGS VDD Driver Same Type as DUT dv/dt controlled by RG ISD controlled by pulse period VGS (Driver) D= Gate Pulse Width Gate Pulse Period 10V IFM, Body Diode Forward Current ISD (DUT) di/dt IRM Body Diode Reverse Current VDS (DUT) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop Peak Diode Recovery dv/dt Test Circuit and Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 9 of 11 QW-R211-026.C UD6604-H Power MOSFET TYPICAL CHARACTERISTICS N-Channel: UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 10 of 11 QW-R211-026.C UD6604-H Power MOSFET TYPICAL CHARACTERISTICS P-Channel UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 11 of 11 QW-R211-026.C