NTE2987 Logic Level MOSFET N–Channel, Enhancement Mode High Speed Switch Features: D Avalanche Rugged Technology D Logic Level Gate Drive D RDS(on) = 0.09Ω Typ. at VGS = 5V D +175°C Operating Temperature D Fast Switching D Low Gate Charge D High Current Capability Absolute Maximum Ratings: Drain Current, ID Continuous TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20A TC = +100°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14A Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80A Total Power Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 105W Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.7W/°C Gate–Source Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±15V Avalanche Current, Repetitive or Non–Repetitive (Note 2), IAR . . . . . . . . . . . . . . . . . . . . . . . . . . . 20A Single Pulsed Avalanche Energy (Note 3), EAS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120mJ Repetitive Avalanche Energy (Note 2), EAR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30mJ Avalanche Current, Repetitive or Non–Repetitive (Note 4), IAR . . . . . . . . . . . . . . . . . . . . . . . . . . . 14A Drain–Source Voltage (VGS = 0), VDS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V Drain–Gate Voltage (RGS = 20kΩ), VDGR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +175°C Maximum Lead Temperature (During Soldering, 1.6mm from case, 10sec), TL . . . . . . . . . . +300°C Thermal Resistance: Maximum Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.43°C/W Typical Case–to–Sink (Mounting surface flat, smooth, and greased), RthCS . . . . . . 0.5°C/W Maximum Junction–to–Ambient (Free Air Operation), RthJA . . . . . . . . . . . . . . . . . . . 62.5°C/W Note Note Note Note 1. 2. 3. 4. Pulse width limited by safe operating area. Pulse width limited by TJ max, Duty Cycle < 1%. VDD = 25V, ID = IAR, Starting TJ = +175°C. TC = +100°C, Pulse width limited by TJ max, Duty Cycle < 1%. Electrical Characteristics: (TC = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit OFF Drain–Source Breakdown Voltage Drain–to–Source Leakage Current BVDSS VGS = 0v, ID = 250µA 100 – – V IDSS VDS = 100V, VGS = 0 – – 1 µA VDS = 80V, VGS = 0V, , TC = +150°C – – 10 µA Gate–Source Leakage Forward IGSS VGS = 15V – – 100 nA Gate–Source Leakage Reverse IGSS VGS = –15V – – –100 nA 1.0 1.6 2.5 V – 0.09 0.12 Ω VDS > ID(on) x RDS(on)max, VGS = 10V 20 – – A 16 – mhos ON (Note 5) Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250µA Static Drain–Source ON Resistance RDS(on) VGS = 5V, ID = 10A On–State Drain Current ID(on) Dynamic Forward Transconductance gfs VDS > ID(on) x RDS(on)max, ID = 10A, Note 5 10 Input Capacitance Ciss VGS = 0V, VDS = 25V, f = 1MHz – 1200 1500 pF Output Capacitance Coss – 250 350 pF Reverse Transfer Capacitance Crss – 60 90 pF – 22 30 nC Switching Total Gate Charge Qg Gate–Source Charge Qgs – 6 – nC Gate–Drain (“Miller”) Charge Qgd – 12 – nC Turn–On Delay Time td(on) VDD = 30V, ID = 10A, RG = 50Ω, VGS = 5V – 50 70 ns – 140 200 ns VDD = 80V, ID = 20A, RG = 50Ω, VGS = 5V – 80 110 ns – 80 110 ns (Body Diode) – – 20 A Rise Time Turn–Off Delay Time Fall Time tr td(off) tf VGS = 5V, ID = 20A, VDD = 80V Source–Drain Diode Ratings and Characteristics Continuous Source Current IS Pulse Source Current ISM (Body Diode) Note 1 – – 80 A Diode Forward Voltage VSD ISD = 20A, VGS = 0V, Note 5 – – 1.5 V Reverse Recovery Time trr – 130 – ns Reverse Recovery Charge Qrr TJ = +150°C, VDD = 50V, ISD = 20A, di/dt = 100A/µs µ – 0.4 – µC Reverse Recovery Current IRRM – 6 – A Note 1. Pulse width limited by safe operating area. Note 5. Pulse Test: Pulse Width = 300µs, Duty Cycle = 1.5%. .420 (10.67) Max .110 (2.79) .147 (3.75) Dia Max .500 (12.7) Max .250 (6.35) Max .500 (12.7) Min .070 (1.78) Max Gate .100 (2.54) Source Drain/Tab