NTE2950 MOSFET N−Channel, Enhancement Mode High Speed Switch TO−262 Type Package Features: D Low RDSON Reduces Losses D Low Gate Charge Improves the Switching Performance D Improved Diode Recovery Improves Switching & EMI Performance D 30V Gate Voltage Rating Improves Robustness D Fully Characterized Avalanche SOA Applications D Motion Control Applications D High Efficiency Synchronous Rectification in SMPS D Uninterruptible Power Supply D Hard Switched and High Frequency Circuits D G S Absolute Maximum Ratings: Continuous Drain Current (VGS = 10V), ID TC = +25C (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 85A TC = +100C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60A Pulsed Drain Current (Note 2), IDM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 330A Maximum Power Dissipation (TC = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350W Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.3W/C Gate−to−Source Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±30V Single Pulse Avalanche Energy (Thermally Limited, Note 3), EAS . . . . . . . . . . . . . . . . . . . . . . 120mJ Operating Junction Temperature Range, Topr . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55 to +175C Storage Temperature Range, TSTG . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55 to +175C Lead Temperature (During soldering, 10 sec. max, 1.6mm from case), TL . . . . . . . . . . . . . . . +300C Thermal Resistance, Junction−to−Case (Note 4, Note 5), RthJC . . . . . . . . . . . . . . . . . . . . . 0.43C/W Thermal Resistance, Junction−to−Ambient (Note 4), RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . 40C/W Note 1. Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 75A Note 2. Repetitive rating: pulse width limited by max. junction temperature. Note 3. Limited by TJmax, starting TJ = +25C, L = 0.096mH, RG = 25W, IAS = 50A, VGS = 10V. Device not recommended for use above this value. Note 4. Thermal resistance is measured at TJ approximately +90C. Note 5. RthJC (end of life) = 0.65C/W. This is the maximum measured value after 1000 temperature cycles from −55 to +15C and is accounted for by the physical wearout of the die attach medium. Electrical Characteristics: Parameter Symbol Test Conditions Min Typ Max Unit 150 − − V Breakdown Voltage Temp. Coefficient DV(BR)DSS/ Reference to +25°C, ID = 1mA, − 150 − mV/°C Static Drain−to−Source On−Resistance RDS(on) VGS = 10V, ID = 33A, Note 6 − 12 15 mW Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250mA 3.0 − 5.0 V − − 20 mA − − 1.0 mA − − ±100 nA − 0.8 − W Static (TJ = +25°C unless otherwise specified) Drain−to−Source Breakdown Voltage V(BR)DSS DTJ Drain−to−Source Leakage Current Gate−to−Source Leakage Current Internal Gate Resistance IDSS IGSS VGS = 0V,ID = 250mA Note 2 VDS = 150V, VGS = 0V TJ = +125°C VGS = ±20V RG(int) Dynamic (TJ = +25°C unless otherwise specified) Forward Transconductance gfs VDS = 25V, ID = 50A 130 − − S Total Gate Charge Qg − 71 110 nC Gate−to−Source Charge Qgs ID = 50A, VDS = 75V, VGS = 10V, Note 6 − 24 − nC Gate−to−Drain (“Miller”) Charge Qgd − 21 − nC Turn−On Delay Time td(on) − 18 − ns − 60 − ns td(off) − 25 − ns tf − 35 − ns − 4460 − pF Rise Time Turn−Off Delay Time Fall Time tr VDD = 98V, ID = 50A, RG = 2.5W, VGS = 10V, Note 6 Input Capacitance Ciss Output Capacitance Coss − 390 − pF Reverse Transfer Capacitance Crss − 82 − pF VGS = 0V, VDS = 50V, f = 1MHz Diode Characteristics Continuous Source Current (Body Diode) IS Note 1 − − 85 A Pulsed Source Current (Body Diode) ISM Note 2 − − 330 A Diode Forward Voltage VSD IS = 50A, VGS = 0V, TJ = +25°C, Note 6 − − 1.3 V Reverse Recovery Time trr − 89 130 ns Reverse Recovery Charge Qrr ID = 50A, VR = 128V, di/dt = 100A/ms, Note 6 − 300 450 nC Reverse Recovery Current IRRM − 6.5 − A Forward Turn−On Time ton Intrinsic turn−on time is negligible (turn−on is dominated by LS+LD) Note 1. Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 75A Note 2. Repetitive rating: pulse width limited by max. junction temperature. Note 6. Pulse width £ 400ms; duty cycle £ 2%. .035 (0.9) .402 (10.2) .177 (4.5) .051 (1.3) .346 (8.8) G D S .433 (11.0) .019 (0.5) .100 (2.54)