DMP4015SPSQ 40V P-CHANNEL ENHANCEMENT MODE MOSFET ® PowerDI Green Product Summary NEW PRODUCT V(BR)DSS Features and Benefits ID RDS(ON) Max TA = +25°C 11mΩ @ VGS = -10V -17.0A 15mΩ @ VGS = -4.5V -14.5A -40V 100% Unclamped Inductive Switch (UIS) Test in Production Low On-Resistance Fast Switching Speed Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability PPAP Capable (Note 4) Description Mechanical Data This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, Case: PowerDI 5060-8 Case Material: Molded Plastic, “Green” Molding Compound. making it ideal for high efficiency power management applications. Applications DC-DC Converters Power Management Functions Analog Switch ® UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish – 100% Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.097 grams (Approximate) D PowerDI5060-8 Pin1 S D S D S D G D G S Top View Top View Pin Configuration Bottom View Internal Schematic Ordering Information (Note 5) Part Number DMP4015SPSQ-13 Notes: Compliance Automotive Case PowerDI5060-8 Packaging 2,500/Tape & Reel 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. Automotive products are AEC-Q101 qualified and are PPAP capable. Refer to http://www.diodes.com/quality/product_compliance_definitions/. 5. For packaging details, go to our website at http://www.diodes.com/products/packages.html. PowerDI is a registered trademark of Diodes Incorporated. DMP4015SPSQ Document number: DS36681 Rev. 3 - 2 1 of 8 www.diodes.com November 2015 © Diodes Incorporated DMP4015SPSQ Marking Information NEW PRODUCT D D D D = Manufacturer’s Marking P4015SP = Product Type Marking Code YYWW = Date Code Marking YY = Year (ex: 13 = 2013) WW = Week (01 - 53) P4015SP YY WW S S S G Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 6) VGS = -10V Steady State t<10s Continuous Drain Current (Note 7) VGS = -10V Steady State t<10s TA = +25°C TA = +70°C TA = +25°C TA = +70°C TA = +25°C TA = +70°C TA = +25°C TA = +70°C Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%) Maximum Body Diode Continuous Current (Note 7) Avalanche Current (Note 8) Avalanche Energy (Note 8) ID Value -40 ±25 -8.5 -6.8 ID -13.0 -10.5 A ID -11.0 -8.7 A -17.0 -13.5 -100 -3.5 -22 242 ID IDM IS IAS EAS Units V V A A A A A mJ Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Total Power Dissipation (Note 6) Thermal Resistance, Junction to Ambient (Note 6) Total Power Dissipation (Note 7) Thermal Resistance, Junction to Ambient (Note 7) Symbol TA = +25°C TA = +70°C Steady State t<10s TA = +25°C TA = +70°C Steady State t<10s Thermal Resistance, Junction to Case (Note 7) Operating and Storage Temperature Range Notes: PD RθJA PD RθJA RθJC TJ, TSTG Value 1.3 0.8 96.4 40.6 2.1 1.4 55.0 24.0 4.15 -55 to +150 Units W °C/W °C/W W °C/W °C/W °C/W °C 6. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 7. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate. 8. UIS in production with L = 0.1mH, TJ = +25°C. DMP4015SPSQ Document number: DS36681 Rev. 3 - 2 2 of 8 www.diodes.com November 2015 © Diodes Incorporated DMP4015SPSQ NEW PRODUCT Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 9) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 9) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS -40 -1 100 V µA nA VGS = 0V, ID = -250μA VDS = -40V, VGS = 0V VGS = 25V, VDS = 0V VGS(th) RDS(ON) |Yfs| VSD -2 7 9 26 -0.7 -2.5 11 15 -1 V Static Drain-Source On-Resistance -1.5 VDS = VGS, ID = -250μA VGS = -10V, ID = -9.8A VGS = -4.5V, ID = -9.8A VDS = -20V, ID = -9.8A VGS = 0V, IS = -1A Ciss Coss Crss RG Qg Qgs Qgd tD(on) tr tD(off) tf 4,234 1,036 526 7.77 47.5 14.2 13.5 13.2 10 302.7 137.9 Forward Transfer Admittance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 10) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Notes: mΩ S V Test Condition pF VDS = -20V, VGS = 0V f = 1MHz Ω VDS = 0V, VGS = 0V, f = 1MHz nC VDS = -20V, VGS = -5V ID = -9.8A ns VGS = -10V, VDD = -20V, RG = 6Ω, ID = -1A, RL = 20Ω 9. Short duration pulse test used to minimize self-heating effect. 10. Guaranteed by design. Not subject to production testing. DMP4015SPSQ Document number: DS36681 Rev. 3 - 2 3 of 8 www.diodes.com November 2015 © Diodes Incorporated DMP4015SPSQ 30 30 -VGS=4.0V 20 -ID, DRAIN CURRENT (A) -ID, DRAIN CURRENT (A) 25 -VGS=3.5V -VGS=4.5V 15 -VGS=10V 10 -VGS=3.0V 5 0 0.5 1 1.5 -VDS, DRAIN -SOURCE VOLTAGE(V) Fig. 1 Typical Output Characteristics 15 10 R DS(ON), DRAIN-SOURCE ON-RESISTANCE() 0.015 0.01 0.005 0 0 0 2 0.02 RDS(ON),DRAIN-SOURCE ON-RESISTANCE() 20 5 0 0 5 10 15 20 25 -ID, DRAIN SOURCE CURRENT Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 1.2 1 0.8 0.6 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE ( C) Fig. 5 On-Resistance Variation with Temperature Document number: DS36681 Rev. 3 - 2 0.02 5 TA = 150 C -VGS= 4.5V TA = 125C 0.015 TA = 85C TA = 25C 0.01 TA = -55 C 0.005 5 10 15 20 25 30 -ID, DRAIN SOURCE CURRENT (A) Fig. 4 Typical On-Resistance vs. Drain Current and Temperature 1.4 DMP4015SPSQ 0.5 1 1.5 2 2.5 3 3.5 4 4.5 -VGS, GATE-SOURCE VOLTAGE (V) Fig. 2 Typical Transfer Characteristics 0 0 30 1.6 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Normalized) NEW PRODUCT 25 4 of 8 www.diodes.com 0.02 -VGS = 4.5V -I D = 5.0A 0.016 0.012 0.008 VGS = 10V ID = 10A 0.004 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Fig. 6 On-Resistance Variation with Temperature November 2015 © Diodes Incorporated 30 2 25 -IS, SOURCE CURRENT (A) -V GS(TH), GATE THRESHOLD VOLTAGE (V) 2.4 1.6 1.2 0.8 20 15 10 5 0.4 0 -50 0 0 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 7 Gate Threshold Variation vs. Ambient Temperature -25 0.2 0.4 0.6 0.8 1 1.2 -VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 8 Diode Forward Voltage vs. Current 1.4 10000 10000 f=1MHz T A =150°C -IDSS, LEAKAGE CURRENT (nA) CT , JUNCTION CAPACITANCE (pF) Ciss Coss 1000 C rss 100 1000 5 10 15 20 25 VDS , DRAIN-SOURCE VOLTAGE (V) Fig. 9 Typical Junction Capacitance TA =125°C TA =85°C 100 10 TA =25°C 1 0.1 0 5 10 15 20 25 30 -V DS, DRAIN-SOURCE VOLTAGE(V) Fig. 10 Typical Drain-Source Leakage Current vs. Voltage 30 10 0 90 600 8 6 4 2 80 500 70 EAS 400 60 50 300 40 IAS 200 30 20 100 IAS, AVALANCHE CURRENT (A) EAS, AVALANCHE ENERGY (mJ) Starting Temperature (TJ) = 25°C VGS, GATE-SOURCE VOLTAGE (V) NEW PRODUCT DMP4015SPSQ 10 0 0 20 40 60 80 100 Qg, TOTAL GATE CHARGE (nC) Fig. 11 Gate-Charge Characteristics DMP4015SPSQ Document number: DS36681 Rev. 3 - 2 120 5 of 8 www.diodes.com 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 INDUCTOR (mH) Fig. 12 Single-Pulse Avalanche Tested 0 November 2015 © Diodes Incorporated DMP4015SPSQ D = 0.7 r(t), TRANSIENT THERMAL RESISTANCE NEW PRODUCT 1 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.9 RJA(t) = r(t) * RJA RJA = 97°C/W D = 0.05 D = 0.02 0.01 P(pk) D = 0.01 t2 TJ - TA = P * RJA(t) Duty Cycle, D = t 1/t2 D = 0.005 DUT mounted on FR-4 PCB with minimum recommended pad layout D = Single Pulse 0.001 0.001 DMP4015SPSQ Document number: DS36681 Rev. 3 - 2 t1 0.01 0.1 1 10 t1, PULSE DURATION TIME (s) Fig. 13 Transient Thermal Response 6 of 8 www.diodes.com 100 1,000 November 2015 © Diodes Incorporated DMP4015SPSQ Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. PowerDI5060-8 D Detail A NEW PRODUCT D1 0(4X) c A1 E1 E e 01 (4X) 1 b (8X) e/2 1 L b2 (4X) D3 A K D2 E3 E2 M b3 (4X) M1 Detail A L1 G PowerDI5060-8 Dim Min Max Typ A 0.90 1.10 1.00 A1 0.00 0.05 b 0.33 0.51 0.41 b2 0.200 0.350 0.273 b3 0.40 0.80 0.60 c 0.230 0.330 0.277 D 5.15 BSC D1 4.70 5.10 4.90 D2 3.70 4.10 3.90 D3 3.90 4.30 4.10 E 6.15 BSC E1 5.60 6.00 5.80 E2 3.28 3.68 3.48 E3 3.99 4.39 4.19 e 1.27 BSC G 0.51 0.71 0.61 K 0.51 L 0.51 0.71 0.61 L1 0.100 0.200 0.175 M 3.235 4.035 3.635 M1 1.00 1.40 1.21 Θ 10° 12° 11° Θ1 6° 8° 7° All Dimensions in mm Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. PowerDI5060-8 X4 Y2 X3 Y3 Y5 Y1 X2 Y4 X1 Y7 Y6 G1 C X DMP4015SPSQ Document number: DS36681 Rev. 3 - 2 G Y(4x) 7 of 8 www.diodes.com Dimensions C G G1 X X1 X2 X3 X4 Y Y1 Y2 Y3 Y4 Y5 Y6 Y7 Value (in mm) 1.270 0.660 0.820 0.610 4.100 0.755 4.420 5.610 1.270 0.600 1.020 0.295 1.825 3.810 0.180 6.610 November 2015 © Diodes Incorporated DMP4015SPSQ IMPORTANT NOTICE NEW PRODUCT DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. 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