DMN2027UPS 20V N-CHANNEL ENHANCEMENT MODE MOSFET NEW PRODUCT INFORMATION ADVANCED ADVANCE INFORMATION Product Summary Features and Benefits V(BR)DSS RDS(ON) Max 20V 12.5mΩ @ VGS= 4.5V 19mΩ @ VGS= 2.5V ID Max TC = +25°C 36A 30A Low RDS(ON) – Ensures On-State Losses Are Minimized Small Form Factor Thermally Efficient Package Enables Higher Density End Products Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 standards for High Reliability Description This MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high-efficiency power management applications. Applications Mechanical Data Case: POWERDI 5060-8 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram Below Weight: 0.097 grams (Approximate) Backlighting Power Management Functions DC-DC Converters ® POWERDI5060-8 S D S D S D G D Pin 1 S S S G D D D D Top View Internal Schematic Bottom View Top View Ordering Information (Note 4) Part Number DMN2027UPS-13 Notes: Case POWERDI5060-8 Packaging 2,500/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. POWERDI is a registered trademark of Diodes Incorporated. DMN2027UPS Document number: DS37940 Rev. 2 - 2 1 of 8 www.diodes.com September 2015 © Diodes Incorporated DMN2027UPS Marking Information NEW PRODUCT INFORMATION ADVANCED ADVANCE INFORMATION D D D D = Manufacturer’s Marking N2027UP = Product Type Marking Code YYWW = Date Code Marking YY = Year (ex: 15 = 2015) WW = Week (01 - 53) N2027UP YY WW S S S G Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage TA = +25°C TA = +70°C Continuous Drain Current (Note 6) VGS = 4.5V Steady TC = +25°C State TC = +70°C Steady TA = +25°C State TA = +70°C Continuous Drain Current (Note 6) VGS = 2.5V TC = +25°C Steady State TC = +70°C Maximum Continuous Body Diode Forward Current (Infinite Heatsink) Pulsed Drain Current (380µs Pulse, Duty Cycle = 1%) Avalanche Current (Note 7) L = 0.1mH Avalanche Energy (Note 7) L = 0.1mH Steady State ID Value 20 12 10 8 ID 36 29 A ID 8.2 6.6 A ID IS IDM IAS EAS 30 23 60 60 6.8 2.3 Units V V A A A A A mJ Thermal Characteristics Characteristic Symbol PD Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient (Note 5) Steady State t<10s Total Power Dissipation (Note 6) Thermal Resistance, Junction to Ambient (Note 6) PD Steady State t<10s Thermal Resistance, Junction to Case Operating and Storage Temperature Range Notes: RθJA RθJA RθJC TJ, TSTG Value 1.1 112 58 1.9 65 34 5 -55 to +150 Units W °C/W °C/W W °C/W °C/W °C/W °C 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper plate. 7. IAS and EAS rating are based on low frequency and duty cycles to keep TJ = +25°C. DMN2027UPS Document number: DS37940 Rev. 2 - 2 2 of 8 www.diodes.com September 2015 © Diodes Incorporated DMN2027UPS NEW PRODUCT INFORMATION ADVANCED ADVANCE INFORMATION Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 8) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS 20 — — — — — — 1.0 ±100 V µA nA VGS = 0V, ID = 250μA VDS = 20V, VGS = 0V VGS = ±12V, VDS = 0V VGS(TH) RDS(ON) VSD — — — 0.7 1.3 12.5 19 1.3 V Static Drain-Source On-Resistance 0.7 — — — VDS = VGS, ID = 250μA VGS = 4.5V, ID = 9.4A VGS = 2.5V, ID = 8.3A VGS = 0V, IS = 1.3A Ciss Coss Crss Rg Qg Qg Qgs Qgd tD(ON) tR tD(OFF) tF tRR QRR — — — — — — — — — — — — — — 1091 163 148 1.5 7.0 11.6 2.5 3.5 6.6 8.4 26.6 12.6 13.2 7.6 — — — 3.2 — — — — — — — — — — Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge (VGS = 2.5V) Total Gate Charge (VGS = 4.5V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Reverse Recovery Time Reverse Recovery Charge Notes: mΩ V Test Condition pF VDS = 10V, VGS = 0V, f = 1.0MHz Ω VDS = 0V, VGS = 0V, f = 1MHz nC VDS = 10V, ID = 9.4A nS VGS = 4.5V, VDS = 10V, RG = 6Ω , ID = 1A nS nC IF = 12A, di/dt = 500A/µs 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing. DMN2027UPS Document number: DS37940 Rev. 2 - 2 3 of 8 www.diodes.com September 2015 © Diodes Incorporated DMN2027UPS 30 40.0 VDS= 5V VGS=2.5V 35.0 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 30.0 VGS=3.5V 25.0 VGS=4.0V 20.0 VGS=4.5V VGS=2.0V 15.0 10.0 20 15 10 150℃ 5 VGS=1.5V 25℃ VGS=1.2V -55℃ 0.0 0 0 0.5 1 1.5 2 2.5 3 0 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1. Typical Output Characteristic 0.5 1 1.5 2 2.5 VGS, GATE-SOURCE VOLTAGE (V) Figure 2. Typical Transfer Characteristic 0.02 0.1 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 85℃ 125℃ 5.0 0.018 0.016 0.014 VGS=2.5V 0.012 0.01 VGS=4.5V 0.008 0.006 0.004 0.002 0.09 0.08 0.07 0 5 10 15 20 25 ID=9.4A 0.06 0.05 0.04 0.03 0.02 ID=8.3A 0.01 0 0 0 30 2 4 6 8 10 12 VGS, GATE-SOURCE VOLTAGE (V) Figure 4. Typical Transfer Characteristic ID, Drain-Source Current (A) Figure 3. Typical On-Resistance vs Drain Current and Gate Voltage 0.02 2.5 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) NEW PRODUCT INFORMATION ADVANCED ADVANCE INFORMATION 25 VGS=3.0V VGS=4.5V 0.018 125℃ 150℃ 0.016 0.014 0.012 85℃ 0.01 0.008 25℃ 0.006 -55℃ 0.004 0.002 0 0 2 4 6 8 10 12 14 16 18 2 1 VGS=2.5V, ID=8.3A 0.5 20 ID, DRAIN CURRENT (A) Figure 5. Typical On-Resistance vs Drain Current and Junction Temperature DMN2027UPS Document number: DS37940 Rev. 2 - 2 VGS=4.5V, ID=9.4A 1.5 4 of 8 www.diodes.com 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (℃) Figure 6. On-Resistance Variation with Junction Temperature September 2015 © Diodes Incorporated 0.03 1.5 VGS(TH), GATE THRESHOLD VOLTAGE (V) NEW PRODUCT INFORMATION ADVANCED ADVANCE INFORMATION RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) DMN2027UPS 0.025 0.02 VGS=2.5V, ID=8.3A 0.015 0.01 VGS=4.5V, ID=9.4A 0.005 1.2 ID=1mA 0.9 ID=250µA 0.6 0.3 0 0 -50 -25 0 25 50 75 100 125 -50 150 TJ, JUNCTION TEMPERATURE (℃) -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (℃) Figure 7. On-Resistance Variation with Junction Temperature Figure 8. Gate Threshold Variation vs Junction Temperature 10000 30 IDSS, LEAKAGE CURRENT (nA) VGS=0V IS, SOURCE CURRENT (A) 25 20 15 TJ=150℃ TJ=125℃ 10 TJ=85℃ 125℃ 100 85℃ 10 1 5 TJ=25℃ 150℃ 1000 25℃ TJ=-55℃ 0.1 0 0 0.3 0.6 0.9 0 1.2 10 15 20 4.5 100000 f=1MHz 4 3.5 10000 3 Ciss 1000 100 VGS (V) CT, JUNCTION CAPACITANCE (pF) 5 VDS, Drain-SOURCE VOLTAGE (V) Figure 10. Typical Drain-Source Leakge Current vs Voltage VSD, SOURCE-DRAIN VOLTAGE (V) Figure 9. Diode Forward Voltage vs Current 2.5 2 Coss 1.5 Crss 1 VDS=10V, ID=9.4A 0.5 0 10 0 5 10 15 20 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 11. Typical Junction Capacitance DMN2027UPS Document number: DS37940 Rev. 2 - 2 0 2 4 6 8 10 12 Qg (nC) Figure 12. Gate Charge 5 of 8 www.diodes.com September 2015 © Diodes Incorporated DMN2027UPS 100 ID, DRAIN CURRENT (A) 10 1 DC PW =10s PW =1s PW =100ms TJ(Max)=150℃ PW =10ms TA=25℃ PW =1ms VGS=4.5V PW =100µs Single Pulse DUT on 1*MRP Board 0.1 0.01 0.1 1 10 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 13. SOA, Safe Operation Area 100 1 r(t), TRANSIENT THERMAL RESISTANCE NEW PRODUCT INFORMATION ADVANCED ADVANCE INFORMATION RDS(ON) Limited D=0.9 D=0.7 0.1 D=0.5 D=0.3 D=0.1 D=0.05 0.01 D=0.02 D=0.01 RθJA (t)=r(t) * RθJA RθJA=112℃/W Duty Cycle, D=t1 / t2 D=0.005 D=Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, PULSE DURATION TIME (sec) Figure 14 Transient Thermal Resistance DMN2027UPS Document number: DS37940 Rev. 2 - 2 6 of 8 www.diodes.com September 2015 © Diodes Incorporated DMN2027UPS Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. POWERDI5060-8 D Detail A NEW PRODUCT INFORMATION ADVANCED ADVANCE INFORMATION D1 0(4X) c A1 E1 E e 01 (4X) 1 b (8X) e/2 1 L b2 (4X) D3 A K D2 E3 E2 M b3 (4X) M1 Detail A L1 G POWERDI5060-8 Dim Min Max Typ A 0.90 1.10 1.00 A1 0.00 0.05 — b 0.33 0.51 0.41 b2 0.200 0.350 0.273 b3 0.40 0.80 0.60 c 0.230 0.330 0.277 D 5.15 BSC D1 4.70 5.10 4.90 D2 3.70 4.10 3.90 D3 3.90 4.30 4.10 E 6.15 BSC E1 5.60 6.00 5.80 E2 3.28 3.68 3.48 E3 3.99 4.39 4.19 e 1.27 BSC G 0.51 0.71 0.61 K 0.51 — — L 0.51 0.71 0.61 L1 0.100 0.200 0.175 M 3.235 4.035 3.635 M1 1.00 1.40 1.21 θ 10° 12° 11° θ1 6° 8° 7° All Dimensions in mm Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. POWERDI5060-8 X4 Y2 X3 Y3 Y5 Y1 X2 Y4 X1 Y7 Y6 G1 C X DMN2027UPS Document number: DS37940 Rev. 2 - 2 G Y(4x) 7 of 8 www.diodes.com Dimensions C G G1 X X1 X2 X3 X4 Y Y1 Y2 Y3 Y4 Y5 Y6 Y7 Value (in mm) 1.270 0.660 0.820 0.610 4.100 0.755 4.420 5.610 1.270 0.600 1.020 0.295 1.825 3.810 0.180 6.610 September 2015 © Diodes Incorporated DMN2027UPS IMPORTANT NOTICE NEW PRODUCT INFORMATION ADVANCED ADVANCE INFORMATION DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. 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LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2015, Diodes Incorporated www.diodes.com DMN2027UPS Document number: DS37940 Rev. 2 - 2 8 of 8 www.diodes.com September 2015 © Diodes Incorporated