DMP3010LPS Green Product Summary P-CHANNEL ENHANCEMENT MODE MOSFET PowerDI Features V(BR)DSS RDS(ON) -30V 7.5mΩ @ VGS = -10V 10mΩ @ VGS = -4.5V ID TA = +25°C -36A -31A Description This new generation 30V P-Channel Enhancement Mode MOSFET is designed to minimize RDS(ON), yet maintain superior switching performance. This device is ideal for use in notebook battery power management and loadswitch. Thermally Efficient Package – Cooler Running Applications High Conversion Efficiency Low RDS(ON) – Minimizes On-State Losses Low Input Capacitance Fast Switching Speed <1.1mm Package Profile – Ideal for Thin Applications ESD HBM Protected up to 1kV Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Applications Mechanical Data Notebook Battery Power Management DC-DC Converters Loadswitch Case: PowerDI5060-8 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram Below Terminals: Finish – 100% Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.097 grams (Approximate) D PowerDI5060-8 Pin1 G S Top View Bottom View Internal Schematic Top View Pin Configuration Ordering Information (Note 4) Part Number DMP3010LPS-13 Notes: Compliance Standard Case PowerDI5060-8 Packaging 2,500/Tape & Reel 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information D D D D = Manufacturer’s Marking P3010LS = Product Type Marking Code YYWW = Date Code Marking YY = Year (ex: 15 = 2015) WW = Week (01 - 53) P3010LS YY WW S S S G PowerDI is a registered trademark of Diodes Incorporated. DMP3010LPS Document number: DS32239 Rev. 12 - 2 1 of 7 www.diodes.com November 2015 © Diodes Incorporated DMP3010LPS Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 7) VGS = 10V Steady State Continuous Drain Current (Note 7) VGS = 4.5V Steady State Continuous Drain Current (Note 6) VGS = 10V Steady State TA = +25°C TA = +70°C TA = +25°C TA = +70°C TA = +25°C TA = +70°C ID Value -30 ±20 -36 -29 ID -31 -25 Unit V V A A IDM IAS EAS -14.5 -11.5 -100 -17.5 153 A A mJ Symbol PD RθJA PD RθJA PD RθJA PD RθJC TJ, TSTG Value 1.26 97 2.18 55 14.37 8.7 58.7 2.13 -55 to +150 Unit W °C/W W °C/W W °C/W W °C/W °C ID Pulsed Drain Current (Notes 6 & 9) Avalanche Current (Notes 10 & 11) Avalanche Energy (Notes 10 & 11) L = 1mH A Thermal Characteristics Characteristic Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient @TA = +25°C (Note 5) Power Dissipation (Note 6) Thermal Resistance, Junction to Ambient @TA = +25°C (Note 6) Power Dissipation (Note 7) Thermal Resistance, Junction to Ambient @TA = +25°C (Note 7) Power Dissipation (Notes 7 & 8) Thermal Resistance, Junction to Case @TC = +25°C (Notes 7 & 8) Operating and Storage Temperature Range Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 11) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 11) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS -30 — — — — — — -1.0 ±100 V μA nA VGS = 0V, ID = -250µA VDS = -30V, VGS = 0V VGS = ±20V, VDS = 0V VGS(th) RDS(ON) -1.6 5.7 7.2 30 -0.65 -2.1 7.5 10 — -1.0 V Static Drain-Source On-Resistance -1.1 — — — — VDS = VGS, ID = -250µA VGS = -10V, ID = -10A VGS = -4.5V, ID = -10A VDS = -15V, ID = -10A VGS = 0V, IS = -1A — — — — — — — — — — — — 6,234 1,500 774 1.28 126.2 59.2 16.1 15.7 11.4 9.4 260.7 99.3 — — — — — — — — — — — — Forward Transfer Admittance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 12) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge (VGS = -10V) Total Gate Charge (VGS = -4.5V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Notes: |Yfs| VSD Ciss Coss Crss Rg Qg Qg Qgs Qgd tD(on) tr tD(off) tf mΩ S V pF pF pF Ω nC nC nC nC ns ns ns ns Test Condition VDS = 15V, VGS = 0V, f = 1.0MHz VDS = 0V, VGS = 0V, f = 1MHz VDS = -15V, ID = -10A VDS = -15V, VGS = -4.5V, ID = -10A VDS = -15V, VGEN = -10V, RG = 6Ω, ID = -1A 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 7. Device mounted on FR-4 PCB with infinite heatsink. 8. RθJC is guaranteed by design while RθCA is determined by the user’s board design. 9. Repetitive rating, pulse width limited by junction temperature, 10s pulse, duty cycle = 1%. 10. IAS and EAS rating are based on low frequency and duty cycles to keep TJ = +25°C. 11. Short duration pulse test used to minimize self-heating effect. 12. Guaranteed by design. Not subject to product testing. DMP3010LPS Document number: DS32239 Rev. 12 - 2 2 of 7 www.diodes.com November 2015 © Diodes Incorporated DMP3010LPS 30 30 VGS = -10V 25 VGS = -5.0V 20 -ID, DRAIN CURRENT (A) -ID, DRAIN CURRENT (A) 25 VGS = -4.5V VGS = -3.5V VGS = -3.0V VGS = -2.5V 15 10 VDS = -5V 20 15 10 TA = 150°C TA = 125°C 5 5 TA = 85°C T A = 25°C VGS = -2.0V 0 4 0.020 0.016 0.012 0.008 VGS = -4.5V VGS = -10V 0.004 0 0 5 10 15 20 25 -ID, DRAIN-SOURCE CURRENT (A) Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage 0 30 RDSON, DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) RDSON, DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) 0.5 1 1.5 2 2.5 -VGS, GATE-SOURCE VOLTAGE (V) Fig. 2 Typical Transfer Characteristic 3 0.016 0.014 VGS = -4.5V 0.012 TA = 150°C 0.010 TA = 125°C 0.008 TA = 85°C TA = 25°C 0.006 TA = -55°C 0.004 0.002 0 0 5 10 15 20 25 -ID, DRAIN CURRENT (A) Fig. 4 Typical On-Resistance vs. Drain Current and Temperature 30 0.020 1.6 1.4 1.2 1.0 TA = -55°C 0 0.5 1 1.5 2 2.5 3 3.5 -VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristic RDS(ON), DRAIN-SOURCE ON-RESISTANCE () RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 0 VGS = -10V ID = -20A 0.8 VGS = -4.5V ID = -10A 0.6 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 5 On-Resistance Variation with Temperature DMP3010LPS Document number: DS32239 Rev. 12 - 2 3 of 7 www.diodes.com 0.016 0.012 VGS = -4.5V ID = -10A 0.008 0.004 VGS = -10V ID = -20A 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Fig. 6 On-Resistance Variation with Temperature November 2015 © Diodes Incorporated DMP3010LPS 30 25 2.0 -IS, SOURCE CURRENT (A) -V GS(TH), GATE THRESHOLD VOLTAGE (V) 2.5 ID = -1mA 1.5 ID = -250µA 1.0 0.5 TA = 25°C 15 10 5 0 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 7 Gate Threshold Variation vs. Ambient Temperature 10,000 0 0 0.2 0.4 0.6 0.8 1.0 1.2 -VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 8 Diode Forward Voltage vs. Current 1.4 100,000 Ciss -IDSS, LEAKAGE CURRENT (nA) CT, JUNCTION CAPACITANCE (pF) 20 Coss 1,000 Crss 10,000 TA = 150°C 1,000 TA = 125°C 100 TA = 85°C 10 f = 1MHz 0 4 8 12 16 -V DS, DRAIN-SOURCE VOLTAGE (V) Fig. 9 Typical Total Capacitance 0 20 VDS = -15V ID = -10A -ID, DRAIN CURRENT (A) -VGS, GATE-SOURCE VOLTAGE (V) 100 8 5 10 15 20 25 -VDS, DRAIN-SOURCE VOLTAGE (V) 6 4 RDS(on) Limited 10 DC PW = 10s 1 PW = 1s PW = 100ms 0.1 TJ(max) = 150°C PW = 10ms TA = 25°C VGS = -10V Single Pulse DUT on 1 * MRP Board 2 0 20 40 60 80 100 120 140 Qg , TOTAL GATE CHARGE (nC) Fig. 11 Gate-Source Voltage vs. Total Gate Charge DMP3010LPS Document number: DS32239 Rev. 12 - 2 30 Fig. 10 Typical Leakage Current vs. Drain-Source Voltage 10 0 TA = 25°C 1 100 0.01 0.1 4 of 7 www.diodes.com PW = 1ms 1 10 -VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 12 SOA, Safe Operation Area 100 November 2015 © Diodes Incorporated DMP3010LPS R(T), TRANSIENT THERMAL RESISTANCE 1 D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.9 D = 0.05 D = 0.02 0.01 DUT mounted on FR-4 PCB with minimum recommended pad layout D = 0.01 D = 0.005 RJA(t) = r(t) * RJA RJA = 97°C/W Duty Cycle, D = t1/t2 D = Single Pulse 0.001 0.001 DMP3010LPS Document number: DS32239 Rev. 12 - 2 0.01 0.1 1 10 t1, PULSE DURATION TIME (s) Fig. 13 Transient Thermal Response 5 of 7 www.diodes.com 100 1,000 November 2015 © Diodes Incorporated DMP3010LPS Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. PowerDI5060-8 D Detail A D1 0(4X) c A1 E1 E e 01 (4X) 1 b (8X) e/2 1 L b2 (4X) D3 A K D2 E3 E2 M b3 (4X) M1 Detail A L1 G PowerDI5060-8 Dim Min Max Typ A 0.90 1.10 1.00 A1 0.00 0.05 b 0.33 0.51 0.41 b2 0.200 0.350 0.273 b3 0.40 0.80 0.60 c 0.230 0.330 0.277 D 5.15 BSC D1 4.70 5.10 4.90 D2 3.70 4.10 3.90 D3 3.90 4.30 4.10 E 6.15 BSC E1 5.60 6.00 5.80 E2 3.28 3.68 3.48 E3 3.99 4.39 4.19 e 1.27 BSC G 0.51 0.71 0.61 K 0.51 L 0.51 0.71 0.61 L1 0.100 0.200 0.175 M 3.235 4.035 3.635 M1 1.00 1.40 1.21 Θ 10° 12° 11° Θ1 6° 8° 7° All Dimensions in mm Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. PowerDI5060-8 X4 Y2 X3 Y3 Y5 Y1 X2 Y4 X1 Y7 Y6 G1 C X DMP3010LPS Document number: DS32239 Rev. 12 - 2 G Dimensions C G G1 X X1 X2 X3 X4 Y Y1 Y2 Y3 Y4 Y5 Y6 Y7 Value (in mm) 1.270 0.660 0.820 0.610 4.100 0.755 4.420 5.610 1.270 0.600 1.020 0.295 1.825 3.810 0.180 6.610 Y(4x) 6 of 7 www.diodes.com November 2015 © Diodes Incorporated DMP3010LPS IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. 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LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2015, Diodes Incorporated www.diodes.com DMP3010LPS Document number: DS32239 Rev. 12 - 2 7 of 7 www.diodes.com November 2015 © Diodes Incorporated