ds32239

DMP3010LPS
Green
Product Summary
P-CHANNEL ENHANCEMENT MODE MOSFET
PowerDI
Features
V(BR)DSS
RDS(ON)
-30V
7.5mΩ @ VGS = -10V
10mΩ @ VGS = -4.5V
ID
TA = +25°C
-36A
-31A
Description
This new generation 30V P-Channel Enhancement Mode MOSFET is
designed to minimize RDS(ON), yet maintain superior switching
performance. This device is ideal for use in notebook battery power
management and loadswitch.



Thermally Efficient Package – Cooler Running Applications
High Conversion Efficiency
Low RDS(ON) – Minimizes On-State Losses







Low Input Capacitance
Fast Switching Speed
<1.1mm Package Profile – Ideal for Thin Applications
ESD HBM Protected up to 1kV
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Applications
Mechanical Data





Notebook Battery Power Management
DC-DC Converters
Loadswitch




Case: PowerDI5060-8
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram Below
Terminals: Finish – 100% Matte Tin Annealed over Copper
Leadframe. Solderable per MIL-STD-202, Method 208
Weight: 0.097 grams (Approximate)
D
PowerDI5060-8
Pin1
G
S
Top View
Bottom View
Internal Schematic
Top View
Pin Configuration
Ordering Information (Note 4)
Part Number
DMP3010LPS-13
Notes:
Compliance
Standard
Case
PowerDI5060-8
Packaging
2,500/Tape & Reel
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
D
D
D
D
= Manufacturer’s Marking
P3010LS = Product Type Marking Code
YYWW = Date Code Marking
YY = Year (ex: 15 = 2015)
WW = Week (01 - 53)
P3010LS
YY WW
S
S
S
G
PowerDI is a registered trademark of Diodes Incorporated.
DMP3010LPS
Document number: DS32239 Rev. 12 - 2
1 of 7
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November 2015
© Diodes Incorporated
DMP3010LPS
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
VDSS
VGSS
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 7) VGS = 10V
Steady
State
Continuous Drain Current (Note 7) VGS = 4.5V
Steady
State
Continuous Drain Current (Note 6) VGS = 10V
Steady
State
TA = +25°C
TA = +70°C
TA = +25°C
TA = +70°C
TA = +25°C
TA = +70°C
ID
Value
-30
±20
-36
-29
ID
-31
-25
Unit
V
V
A
A
IDM
IAS
EAS
-14.5
-11.5
-100
-17.5
153
A
A
mJ
Symbol
PD
RθJA
PD
RθJA
PD
RθJA
PD
RθJC
TJ, TSTG
Value
1.26
97
2.18
55
14.37
8.7
58.7
2.13
-55 to +150
Unit
W
°C/W
W
°C/W
W
°C/W
W
°C/W
°C
ID
Pulsed Drain Current (Notes 6 & 9)
Avalanche Current (Notes 10 & 11)
Avalanche Energy (Notes 10 & 11) L = 1mH
A
Thermal Characteristics
Characteristic
Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient @TA = +25°C (Note 5)
Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient @TA = +25°C (Note 6)
Power Dissipation (Note 7)
Thermal Resistance, Junction to Ambient @TA = +25°C (Note 7)
Power Dissipation (Notes 7 & 8)
Thermal Resistance, Junction to Case @TC = +25°C (Notes 7 & 8)
Operating and Storage Temperature Range
Electrical Characteristics
(@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 11)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 11)
Gate Threshold Voltage
Symbol
Min
Typ
Max
Unit
BVDSS
IDSS
IGSS
-30
—
—
—
—
—
—
-1.0
±100
V
μA
nA
VGS = 0V, ID = -250µA
VDS = -30V, VGS = 0V
VGS = ±20V, VDS = 0V
VGS(th)
RDS(ON)
-1.6
5.7
7.2
30
-0.65
-2.1
7.5
10
—
-1.0
V
Static Drain-Source On-Resistance
-1.1
—
—
—
—
VDS = VGS, ID = -250µA
VGS = -10V, ID = -10A
VGS = -4.5V, ID = -10A
VDS = -15V, ID = -10A
VGS = 0V, IS = -1A
—
—
—
—
—
—
—
—
—
—
—
—
6,234
1,500
774
1.28
126.2
59.2
16.1
15.7
11.4
9.4
260.7
99.3
—
—
—
—
—
—
—
—
—
—
—
—
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 12)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (VGS = -10V)
Total Gate Charge (VGS = -4.5V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Notes:
|Yfs|
VSD
Ciss
Coss
Crss
Rg
Qg
Qg
Qgs
Qgd
tD(on)
tr
tD(off)
tf
mΩ
S
V
pF
pF
pF
Ω
nC
nC
nC
nC
ns
ns
ns
ns
Test Condition
VDS = 15V, VGS = 0V,
f = 1.0MHz
VDS = 0V, VGS = 0V, f = 1MHz
VDS = -15V, ID = -10A
VDS = -15V, VGS = -4.5V,
ID = -10A
VDS = -15V, VGEN = -10V,
RG = 6Ω, ID = -1A
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. Device mounted on FR-4 PCB with infinite heatsink.
8. RθJC is guaranteed by design while RθCA is determined by the user’s board design.
9. Repetitive rating, pulse width limited by junction temperature, 10s pulse, duty cycle = 1%.
10. IAS and EAS rating are based on low frequency and duty cycles to keep TJ = +25°C.
11. Short duration pulse test used to minimize self-heating effect.
12. Guaranteed by design. Not subject to product testing.
DMP3010LPS
Document number: DS32239 Rev. 12 - 2
2 of 7
www.diodes.com
November 2015
© Diodes Incorporated
DMP3010LPS
30
30
VGS = -10V
25
VGS = -5.0V
20
-ID, DRAIN CURRENT (A)
-ID, DRAIN CURRENT (A)
25
VGS = -4.5V
VGS = -3.5V
VGS = -3.0V
VGS = -2.5V
15
10
VDS = -5V
20
15
10
TA = 150°C
TA = 125°C
5
5
TA = 85°C
T A = 25°C
VGS = -2.0V
0
4
0.020
0.016
0.012
0.008
VGS = -4.5V
VGS = -10V
0.004
0
0
5
10
15
20
25
-ID, DRAIN-SOURCE CURRENT (A)
Fig. 3 Typical On-Resistance
vs. Drain Current and Gate Voltage
0
30
RDSON, DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
RDSON, DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
0.5
1
1.5
2
2.5
-VGS, GATE-SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristic
3
0.016
0.014
VGS = -4.5V
0.012
TA = 150°C
0.010
TA = 125°C
0.008
TA = 85°C
TA = 25°C
0.006
TA = -55°C
0.004
0.002
0
0
5
10
15
20
25
-ID, DRAIN CURRENT (A)
Fig. 4 Typical On-Resistance
vs. Drain Current and Temperature
30
0.020
1.6
1.4
1.2
1.0
TA = -55°C
0
0.5
1
1.5
2
2.5
3
3.5
-VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristic
RDS(ON), DRAIN-SOURCE ON-RESISTANCE ()
RDS(ON), DRAIN-SOURCE ON-RESISTANCE ()
0
VGS = -10V
ID = -20A
0.8
VGS = -4.5V
ID = -10A
0.6
-50
-25
0
25
50
75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Fig. 5 On-Resistance Variation with Temperature
DMP3010LPS
Document number: DS32239 Rev. 12 - 2
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0.016
0.012
VGS = -4.5V
ID = -10A
0.008
0.004
VGS = -10V
ID = -20A
0
-50
-25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Fig. 6 On-Resistance Variation with Temperature
November 2015
© Diodes Incorporated
DMP3010LPS
30
25
2.0
-IS, SOURCE CURRENT (A)
-V GS(TH), GATE THRESHOLD VOLTAGE (V)
2.5
ID = -1mA
1.5
ID = -250µA
1.0
0.5
TA = 25°C
15
10
5
0
-50 -25
0
25
50
75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
10,000
0
0
0.2
0.4
0.6
0.8
1.0
1.2
-VSD, SOURCE-DRAIN VOLTAGE (V)
Fig. 8 Diode Forward Voltage vs. Current
1.4
100,000
Ciss
-IDSS, LEAKAGE CURRENT (nA)
CT, JUNCTION CAPACITANCE (pF)
20
Coss
1,000
Crss
10,000
TA = 150°C
1,000
TA = 125°C
100
TA = 85°C
10
f = 1MHz
0
4
8
12
16
-V DS, DRAIN-SOURCE VOLTAGE (V)
Fig. 9 Typical Total Capacitance
0
20
VDS = -15V
ID = -10A
-ID, DRAIN CURRENT (A)
-VGS, GATE-SOURCE VOLTAGE (V)
100
8
5
10
15
20
25
-VDS, DRAIN-SOURCE VOLTAGE (V)
6
4
RDS(on)
Limited
10
DC
PW = 10s
1
PW = 1s
PW = 100ms
0.1 TJ(max) = 150°C
PW = 10ms
TA = 25°C
VGS = -10V
Single Pulse
DUT on 1 * MRP Board
2
0
20
40
60
80
100
120 140
Qg , TOTAL GATE CHARGE (nC)
Fig. 11 Gate-Source Voltage vs. Total Gate Charge
DMP3010LPS
Document number: DS32239 Rev. 12 - 2
30
Fig. 10 Typical Leakage Current vs. Drain-Source Voltage
10
0
TA = 25°C
1
100
0.01
0.1
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PW = 1ms
1
10
-VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 12 SOA, Safe Operation Area
100
November 2015
© Diodes Incorporated
DMP3010LPS
R(T), TRANSIENT THERMAL RESISTANCE
1
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.9
D = 0.05
D = 0.02
0.01
DUT mounted on FR-4 PCB with
minimum recommended pad layout
D = 0.01
D = 0.005
RJA(t) = r(t) * RJA
RJA = 97°C/W
Duty Cycle, D = t1/t2
D = Single Pulse
0.001
0.001
DMP3010LPS
Document number: DS32239 Rev. 12 - 2
0.01
0.1
1
10
t1, PULSE DURATION TIME (s)
Fig. 13 Transient Thermal Response
5 of 7
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100
1,000
November 2015
© Diodes Incorporated
DMP3010LPS
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version.
PowerDI5060-8
D
Detail A
D1
0(4X)
c
A1
E1 E
e
01 (4X)
1
b (8X)
e/2
1
L
b2 (4X)
D3
A
K
D2
E3 E2
M
b3 (4X)
M1
Detail A
L1
G
PowerDI5060-8
Dim
Min
Max
Typ
A
0.90
1.10
1.00
A1
0.00
0.05

b
0.33
0.51
0.41
b2
0.200
0.350 0.273
b3
0.40
0.80
0.60
c
0.230
0.330 0.277
D
5.15 BSC
D1
4.70
5.10
4.90
D2
3.70
4.10
3.90
D3
3.90
4.30
4.10
E
6.15 BSC
E1
5.60
6.00
5.80
E2
3.28
3.68
3.48
E3
3.99
4.39
4.19
e
1.27 BSC
G
0.51
0.71
0.61
K
0.51


L
0.51
0.71
0.61
L1
0.100
0.200 0.175
M
3.235
4.035 3.635
M1
1.00
1.40
1.21
Θ
10°
12°
11°
Θ1
6°
8°
7°
All Dimensions in mm
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
PowerDI5060-8
X4
Y2
X3
Y3
Y5
Y1
X2
Y4
X1
Y7
Y6
G1
C
X
DMP3010LPS
Document number: DS32239 Rev. 12 - 2
G
Dimensions
C
G
G1
X
X1
X2
X3
X4
Y
Y1
Y2
Y3
Y4
Y5
Y6
Y7
Value (in mm)
1.270
0.660
0.820
0.610
4.100
0.755
4.420
5.610
1.270
0.600
1.020
0.295
1.825
3.810
0.180
6.610
Y(4x)
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November 2015
© Diodes Incorporated
DMP3010LPS
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2015, Diodes Incorporated
www.diodes.com
DMP3010LPS
Document number: DS32239 Rev. 12 - 2
7 of 7
www.diodes.com
November 2015
© Diodes Incorporated