TH8082 DataSheet old 291 DownloadLink 4813

TH8082
Enhanced SoloLIN Transceiver
Features
‰
Compatible to LIN Physical Layer Specification Rev.1.3 and 2.0
‰
Compatible to ISO9141 functions
‰
Operating voltage VS = 7 to 18 V
‰
Very low standby current consumption of 6.5µA in sleep mode
‰
Remote wake up via bus traffic
‰
Baud rate up to 20 kBaud
‰
Control output for voltage regulator with low on – resistance for switchable master
termination
‰
Low EME due to slew rate control
‰
High EMI immunity
‰
Fully integrated receiver filter
‰
Bus terminals proof against short-circuits and transients in the automotive environment
‰
High impedance Bus pin in case of loss of ground and undervoltage condition
‰
Bus short to ground protection
‰
Thermal overload protection
‰
Integrated termination resistor for LIN slave nodes
‰
High signal symmetry for using in RC – based slave nodes up to 2% clock tolerance
‰
±4kV ESD protection
Ordering Information
Part No.
Temperature Range
Package
TH8082 KDC
K (-40 to 125 °C)
DC (SOIC8)
General Description
The TH8082 is a physical layer device for a single wire data link capable of operating in applications where
high data rate is not required and a lower data rate can achieve cost reductions in both the physical media
components and in the microprocessor which use the network. The TH8082 is designed in accordance to the
physical layer definition of the LIN Protocol Specification, Rev. 1.3 and 2.0.The IC furthermore can be used
in ISO9141 systems.
Because of the very low current consumption of the TH8082 in the sleep mode it’s suitable for ECU
applications with hard standby current requirements. This mode allows a shutdown of the whole application.
The included wake-up function detects incoming dominant bus messages and enables the voltage regulator.
TH8082 – Datasheet
3901008082
Page 1 of 26
July 2004
Rev 006
TH8082
Enhanced SoloLIN Transceiver
Contents
1.
Functional Diagram ....................................................................................................4
2.
Electrical Specification ..............................................................................................5
2.1
2.2
2.3
2.4
2.5
2.6
3.
Functional Description.............................................................................................12
3.1
3.2
3.3
3.4
4.
Initialization..........................................................................................................12
Operating Modes .................................................................................................12
Mode control.......................................................................................................12
LIN BUS Transceiver...........................................................................................13
Operating under Disturbance ..................................................................................15
4.1
4.2
4.3
4.4
4.5
4.6
5.
Operating Conditions.............................................................................................5
Absolute Maximum Ratings ...................................................................................5
Static Characteristics.............................................................................................6
Dynamic Characteristics........................................................................................8
Timing Diagrams ...................................................................................................9
Test Circuits for Dynamic and Static Characteristics ...........................................11
Loss of battery .....................................................................................................15
Loss of Ground ....................................................................................................15
Short circuit to battery..........................................................................................15
Short circuit to ground .........................................................................................15
Thermal overload.................................................................................................15
Undervoltage Vcc ................................................................................................15
Application Hints ......................................................................................................16
5.1
LIN System Parameter ........................................................................................16
5.1.1. Bus loading requirements.............................................................................16
5.2
Min/max slope time calculation............................................................................17
5.3
Duty Cycle Calculation ........................................................................................18
5.4
Application Circuitry.............................................................................................19
6.
Pin Description .........................................................................................................20
7.
Mechanical Specification SOIC8 .............................................................................21
8.
Tape and Reel Specification ....................................................................................22
8.1
8.2
Tape Specification ...............................................................................................22
Reel Specification................................................................................................23
TH8082 – Datasheet
3901008082
Page 2 of 26
July 2004
Rev 006
TH8082
Enhanced SoloLIN Transceiver
9.
ESD/EMC Remarks ...................................................................................................24
9.1
9.2
9.3
General Remarks ................................................................................................24
ESD-Test .............................................................................................................24
EMC ....................................................................................................................24
10.
Assembly Information ..........................................................................................25
11.
Disclaimer..............................................................................................................25
List of Figures
Figure 1 - Block Diagram ......................................................................................................................... 4
Figure 2 - Input / Output timing................................................................................................................ 9
Figure 3 – Receiver debouncing and propagation delay......................................................................... 9
Figure 4 – Sleep mode and wake up procedure ................................................................................... 10
Figure 5 - Test circuit for dynamic characteristics ................................................................................. 11
Figure 6 - Test circuit for automotive transients .................................................................................... 11
Figure 7 - Receive impulse diagram...................................................................................................... 13
Figure 8 - Slope time and slew rate calculation in accordance to LIN 1.3 ............................................ 17
Figure 8 - Duty cycle calculation in accordance to LIN 2.0 ................................................................... 18
Figure 9 - Application Circuitry .............................................................................................................. 19
Figure 10 - Pin description SOIC8 package .......................................................................................... 20
TH8082 – Datasheet
3901008082
Page 3 of 26
July 2004
Rev 006
TH8082
Enhanced SoloLIN Transceiver
1. Functional Diagram
TH8082
INH
Biasing
Bandgap
internal Supply
VCC
VS
Thermal
Protection
POR
30K
SLEW RATE
BUS Driver
TxD
BUS
GND
EN
MODE
CONTROL
Wake-up
Filter
RxD
Receive
Comparator
Input
Filter
Figure 1 - Block Diagram
TH8082 – Datasheet
3901008082
Page 4 of 26
July 2004
Rev 006
TH8082
Enhanced SoloLIN Transceiver
2. Electrical Specification
All voltages are referenced to ground (GND). Positive currents flow into the IC.
The absolute maximum ratings (in accordance with IEC 60 134) given in the table below are limiting values
that do not lead to a permanent damage of the device but exceeding any of these limits may do so. Long
term exposure to limiting values may effect the reliability of the device.
2.1 Operating Conditions
Parameter
Symbol
Min
Max
Unit
Battery supply voltage [1]
VS
7
18
V
Supply voltage
VCC
4.5
5.5
V
Operating ambient temperature
Tamb
-40
+125
°C
[1]
Vs is the IC supply voltage including voltage drop of reverse battery protection diode, VDROP = 0.4 to 1V,
VBAT_ECU voltage range is 8 to 18V
2.2 Absolute Maximum Ratings
Parameter
Symbol
Battery Supply Voltage
VS
Supply Voltage
VCC
Transient supply voltage
VS.tr1
Condition
Min
t < 1 min
-0.3
Load dump, t < 500ms
-0.3
ISO 7637/1 pulse
1[1]
VS..tr2
ISO 7637/1 pulses
Transient supply voltage
VS..tr3
ISO 7637/1 pulses 3A, 3B
-150
BUS voltage
VBUS
t < 500ms , Vs = 18V
-27
t < 500ms ,Vs = 0V
-40
ISO 7637/1 pulse 1 [2]
-150
Transient bus voltage
Transient bus voltage
DC voltage on pins TxD, RxD
VBUS..tr1
VBUS.tr2
VBUS.tr3
ISO 7637/1 pulses
2[1]
2 [2]
ISO 7637/1 pulses 3A,
30
40
+7
-150
Transient supply voltage
Transient bus voltage
Max
3B [2]
VDC
Unit
V
V
V
100
V
150
V
40
V
V
100
V
-150
150
V
-0.3
7
V
ESD capability of pin LIN, VS, INH
ESDHB
Human body model,
equivalent to discharge
100pF with 1.5kΩ,
-4
4
kV
ESD capability of pin RxD, TxD, VCC
ESDHB
Human body model,
equivalent to discharge
100pF with 1.5kΩ,
-2
2
kV
Maximum latch - up free current at any Pin
ILATCH
-500
500
mA
152
K/W
Thermal impedance
ΘJA
Storage temperature
Tstg
-55
+150
°C
Junction temperature
Tvj
-40
+150
°C
[1]
[2]
in free air
ISO 7637 test pulses are applied to VS via a reverse polarity diode and >2uF blocking capacitor.
ISO 7637 test pulses are applied to BUS via a coupling capacitance of 1 nF.
TH8082 – Datasheet
3901008082
Page 5 of 26
July 2004
Rev 006
TH8082
Enhanced SoloLIN Transceiver
2.3 Static Characteristics
Unless otherwise specified all values in the following tables are valid for VS = 7 to 18V, VCC = 4.5 to 5.5V and
TAMB= -40 to 125°C. All voltages are referenced to ground (GND), positive currents are flow into the IC.
Parameter
Symbol
Condition
Min
Typ
Max
Unit
4.3
V
PIN VS, VCC
VCC undervoltage lockout
VCC_UV
EN=H, TxD=L
2.75
Supply current, dominant
ISd
VS = 18V,VCC = 5.5V TxD = L
0.9
2
mA
Supply current, dominant
ICCd
VS = 18V,VCC = 5.5V TxD = L
0.6
2
mA
Supply current, recessive
ISr
VS = 18V,VCC = 5.5V TxD = H
25
50
µA
Supply current, recessive
ICCr
VS = 18V,VCC = 5.5V TxD = H
50
75
µA
Supply current, sleep mode
ISsl
VS = 12V,VCC and TxD = 0V,
Tamb= 25°
6.5
Supply current, sleep mode
ISsl
VS = 12V, VCC and TxD = 0V
6.5
14
µA
120
200
mA
-200
µA
µA
PIN BUS – Transmitter
Short circuit bus current [2] [3]
IBUS_LIM
VBUS = VS, driver on
Pull up current bus [2] [3]
IBUS_PU
VBUS = 0, VS = 12V, driver off
Pull up current bus
Bus reverse current, recessive [2] [3]
IBUS_PU_SLEEP VBUS = 0, VS = 12V, sleep mode
IBUS_PAS_rec
-600
-100
µA
-75
VBUS > VS , 8V < VBUS < 18V
7V < VS < 18V, driver off
20
µA
100
µA
1
mA
Bus reverse current loss of battery [2] [3]
IBUS
VS = 0V, 0V < VBUS < 18V
Bus current during loss of ground [2] [3]
IBUS_NO_GND
VS = 12V, 0 < VBUS < 18V
-1
Transmitter dominant voltage [2]
VolBUS_2
VS = 7V, load = 500Ω
1.2
V
Transmitter dominant voltage [2]
VolBUS_3
VS = 18V, load = 500Ω
2
V
35
pF
BUS input capacitance [1]
Pulse response via 10kΩ,
VPULSE = 12V, Vs open
CBUS
25
PIN BUS – Receiver
Receiver dominant voltage [2] [3]
VilBUS
0.4 *VS
Receiver recessive voltage [2] [3]
VihBUS
Center point of receiver threshold [1] [2] [3]
ViBUS_cnt
VBUS_cnt = (VilBUS + VihBUS )/2
Receiver hysteresis [1] [2] [3]
ViBUS_hys
VBUS_cnt = ( VihBUS -VilBUS )
V
0.6 *VS
V
0.487 *VS 0.5 *VS 0.512 *VS
V
0.175
*VS
0.187 *VS
V
0.7*VCC
V
PIN TXD, EN
High level input voltage
Vih
Rising edge
Low level input voltage
Vil
Falling edge
0.3*VCC
V
TxD pull up resistor
RIH_TXD
VTXD = 0V
10
15
20
kΩ
EN pull down resistor
RIL_EH
VEN = 5V
20
30
40
kΩ
TH8082 – Datasheet
3901008082
Page 6 of 26
July 2004
Rev 006
TH8082
Enhanced SoloLIN Transceiver
Parameter
Symbol
Condition
Min
Typ
Max
Unit
0.9
V
10
µA
50
Ω
-5
5
µA
PIN RXD
Low level output voltage
Vol_rxd
IRxD = 2mA
Leakage Current
Vleak_rxd
VRxD = 5.5V, recessive
-10
PIN INH
On resistance INH
Ron_INH
Normal or standby mode,
VINH = VS-1V , VS = 12V
Leakage current INH
IINH_lk
EN = L ,VINH = 0V
20
Thermal Protection
Thermal shutdown
Tsd [1]
155
180
°C
Thermal recovery
Thys [1]
126
150
°C
[1]
[2]
[3]
No production test, guaranteed by design and qualification
In accordance to LIN Physical Layer Specification 1.3
In accordance to LIN Physical Layer Specification 2.0
TH8082 – Datasheet
3901008082
Page 7 of 26
July 2004
Rev 006
TH8082
Enhanced SoloLIN Transceiver
2.4 Dynamic Characteristics
Unless otherwise specified all values in the following table are valid for VS = 7 to 18V and
TAMB= -40 to 125oC.
Parameter
Symbol
Propagation delay transmitter [1] [3] [6]
Propagation delay transmitter symmetry
Propagation delay receiver
[3] [6]
[1] [3] [6] [7] [9]
Propagation delay receiver symmetry
[3] [6] [7]
Slew rate rising and falling edge, high batttery
[5] [6]
Slew rate rising and falling edge, low batttery
[5] [6]
Slope Symmetry, high battery [5] [6]
Condition
ttrans_pd
Bus loads: 1KΩ/1nF,
660Ω/6.8nF, 500Ω/10nF
ttrans_sym
Calculate ttrans_pdf - ttrans_pdr
Min
Typ
-2
Max
Unit
5
µs
2
µs
6
µs
2
µs
trec_pdf
CRxD = 25pF
trec_sym
Calculate ttrans_pdf - ttrans_pdr
-2
|tSR_HB|
Bus load, VS = 18V
1KΩ/1nF
660Ω/6.8nF
500Ω/10nF
1
2
3
V/µs
|tSR_LB|
Bus load, VS = 7V
1KΩ/1nF
660Ω/6.8nF
500Ω/10nF
0.5
2
3
V/µs
+5
µs
tssym_HB
Bus load, VS = 18V
1KΩ/1nF
660Ω/6.8nF
500Ω/10nF
Calculate tsdom - tsrec
-5
Bus duty cycle 1 [7]
D1
Calculate tBUS_rec(min)/100µs
Bus duty cycle 2 [7]
D2
Calculate tBUS_rec(max)/100µs
trec_deb
BUS rising and falling edge
1.5
4
µs
Wake-up filter time
twu
Sleep mode,
BUS rising and falling edge
30
150
µs
EN - debounce time
ten_deb
Normal to sleep mode
transition
10
40
µs
Receiver debounce time [2] [5] [9]
[1]
[2]
[3]
[4]
[5]
[6]
[7]
[8]
[9]
0.396
0.581
20
Propagation delays are not relevant for LIN protocol transmission, value only information parameter
No production test, guaranteed by design and qualification
See Figure 2 - Input / Output timing
See Figure 8 - Slope time and slew rate calculation
See Figure 3 – Receiver debouncing a and propagation delay
In accordance to LIN Physical Layer Specification 1.3
In accordance to LIN Physical Layer Specification 2.0
See Figure 9 - Duty cycle calculation in accordance to LIN 2.0
This parameter is tested by applying a wave signal to the bus. The minimum slew rate for the bus rising and falling edge is
50V/µs
TH8082 – Datasheet
3901008082
Page 8 of 26
July 2004
Rev 006
TH8082
Enhanced SoloLIN Transceiver
2.5 Timing Diagrams
50%
TxD
ttrans_f
ttrans_r
VBUS
100%
95%
BUS
5%
0%
RxD
Figure 2 - Input / Output timing
t < trec_deb
t < trec_deb
VBUS
t
tREC_PDF
tREC_PDR
VRxD
50%
t
Figure 3 – Receiver debouncing and propagation delay
TH8082 – Datasheet
3901008082
Page 9 of 26
July 2004
Rev 006
TH8082
Enhanced SoloLIN Transceiver
VBUS
t
t > twu
VINH
twu
t
VCC
t
VEN
t
VRx
D
wake-up interrupt
t
Figure 4 – Sleep mode and wake up procedure
TH8082 – Datasheet
3901008082
Page 10 of 26
July 2004
Rev 006
TH8082
Enhanced SoloLIN Transceiver
2.6 Test Circuits for Dynamic and Static Characteristics
100n
VS
VCC
RL
100n
TH8080
BUS
CL
TxD
2.7K
RxD
GND
20p
Figure 5 - Test circuit for dynamic characteristics
100n
VS
VCC
BUS
TxD
GND
RxD
2uF
500
1nF
Oszi
TH8080
Schaffnergenerator
Puls3a,3b
12V
Puls1,2,4
Figure 6 - Test circuit for automotive transients
TH8082 – Datasheet
3901008082
Page 11 of 26
July 2004
Rev 006
TH8082
Enhanced SoloLIN Transceiver
3. Functional Description
3.1 Initialization
After power on, the chip enters automatically the VBAT-standby mode. In this intermediate mode the INH
output will become HIGH (VS) and therefore the ECU - voltage regulator will provide the VCC - supply. The
transceiver will remain the VBAT-standby mode until the controller sets it to normal operation (EN = High).
Only in this mode bus communication is possible. The TH8082 switches itself in the VBAT-standby mode if
VCC is missing or below the threshold.
3.2 Operating Modes
Via the EN pin it is possible to switch the TH8082 into different operating modes:
Normal Mode
The whole TH8082 is active. Switching to normal mode can only be done via the EN pin with EN=high.
Sleep Mode
The sleep mode (EN = LOW) can only be reached from normal mode and permits a very low power
consumption because the transceiver and even the external voltage regulator will be disabled. If the VCC has
been switched off a wake-up request from the bus line (remote wake up) will cause the TH8082 to enter the
VBAT-standby mode (VCC is present again) and sets the RxD output to low until the device enters the normal
operation mode (active LOW interrupt at RxD). If the INH pin is not connected to the regulator or the
inhibitable external regulator is not the one that provides the VCC - supply, the normal mode is directly
accessible by logic high on the EN pin. (wake up via mode change/local wake up)
In order to prevent an unintended wake-up caused by disturbances of the automotive environment incoming
dominant signals from the bus have to exceed the wake-up delay time.
Thermal Shutdown Mode
If the junction temperature TJ is higher than 155°C, the TH8082 will be switched into the thermal shutdown
mode. Within this mode the transmitter will be switched off.
If TJ falls below the thermal shutdown temperature (typ. 140°C) the TH8082 will be switched to the previous
state.
3.3 Mode control
EN
VCC
0
0
0
Comment
INH
RxD
VBAT-standby , power on
Vs
0
1
VBAT-standby , VCC on
Vs
X
1
1
Normal mode
Vs
Vcc = recessive
0 = dominant
0
0
Sleep mode
floating
0
0
1
Sleep mode
regulator not disabled
directly switch to normal mode with EN = 1
floating
Vcc
0
0/1
Vs
0 - Active low wake up
interrupt
Remote wake up request
Table 1 - Mode control
TH8082 – Datasheet
3901008082
Page 12 of 26
July 2004
Rev 006
TH8082
Enhanced SoloLIN Transceiver
3.4 LIN BUS Transceiver
The transceiver consists a bus-driver ([email protected]) with slew rate control, current limitation and as well in
the receiver a high voltage comparator followed by a debouncing unit.
BUS Input/Output
The recessive BUS level is generated from the integrated 30k pull up resistor in serial with a diode This
diode prevent the reverse current of VBUS during differential voltage between VS and BUS (VBUS>VS).
No additional termination resistor is necessary to use the TH8082 in LIN slave nodes. If this IC is used for
LIN master nodes it is necessary that the BUS pin is terminated via a external 1kΩ resistor in serial with a
diode to VBAT or INH (See chapter 4.4 Short circuit to ground).
TxD Input
During transmission the data at the pin TxD will be transferred to the BUS driver for generating a BUS signal.
To minimize the electromagnetic emission of the bus line, the BUS driver is equipped with an integrated slew
rate control and wave shaping unit.
Transmitting will be interrupted in the following cases:
- Sleep mode
- Thermal Shutdown active
- VBAT standby
The CMOS compatible input TxD controls directly the BUS level:
TxD = low
TxD = high
->
->
BUS = low (dominant level)
BUS = high (recessive level)
The TxD pin has an internal pull up resistor connected to VCC. This secures that an open TxD pin generates
a recessive BUS level.
RxD Output
The data signals from the BUS pin will be transferred continuously to the pin RxD. Short spikes on the bus
signal are suppressed by the implemented debouncing circuit.
VS
VBUS_CNT_max
BUS
60%
50%
40%
VhHYS
VBUS_CNT_min
t < trec_deb
t < trec_deb
RxD
Figure 7 - Receive impulse diagram
TH8082 – Datasheet
3901008082
Page 13 of 26
July 2004
Rev 006
TH8082
Enhanced SoloLIN Transceiver
The receive threshold values VBUS_CNT_max and VBUS_CNT_min are symmetrical to the centre voltage of 0.5*VS
with a hysteresis of typ. 0.175*VS. Including all tolerances the LIN specific receive threshold values of 0.4*VS
and 0.6*VS will be secure observed.
The received BUS signal will be output to the RxD pin:
BUS < VBUS_CNT – 0.5 * VHYS
BUS > VBUS_CNT + 0.5 * VHYS
->
->
RxD = low (BUS dominant)
RxD = high, floating (BUS recessive)
This pin is a buffered open drain output with a typical load of:
Resistance: 2.7 kOhm
Capacitance: < 25 pF
EN-Pin
The TH8082 is switched into the sleep mode with a falling edge and into normal mode with a rising edge at
the EN pin. The normal mode will be kept as long as EN = high (See Figure 4 – Sleep mode and wake up
procedure for more details).
If the TH8082 is switched to sleep mode also a connected voltage regulator via the INH pin is switched off.
The deactivation of TH8082 with EN = low can be done independent from the state of the bus-transceiver.
The EN input is internal pulled down so that it is secured if this pin is not connected a low level will be
applied.
Datarate
The TH8082 is a constant slew rate transceiver that means the bus driver operates with a fixed slew rate
range of 1.0 V/µs ≤ ∆V/∆T ≤ 3V/µs. This principle secures a very good symmetry of the slope times between
recessive to dominant and dominant to recessive slopes within the LIN bus load range (CBUS, Rterm).
The TH8082 guarantees data rates up to 20kbit within the complete bus load range under worst case
conditions. The constant slew rate principle is very robust against voltage drops and can operate with RCoscillator systems with a clock tolerance up to ±2% between 2 nodes.
TH8082 – Datasheet
3901008082
Page 14 of 26
July 2004
Rev 006
TH8082
Enhanced SoloLIN Transceiver
4. Operating under Disturbance
4.1 Loss of battery
If the ECU is disconnected from the battery, the bus pin is in high impedance state. There is no impact to the
bus traffic and to the ECU itself.
4.2 Loss of Ground
In case of an interrupted ECU ground connection there is no influence to the bus line.
4.3 Short circuit to battery
The transmitter output current is limited to the specified value in case of short circuit to battery in order to
protect the TH8082 itself against high current densities .
4.4 Short circuit to ground
If the bus line is shorted to negative shifted ground levels, there is no current flow from the ECU ground to
the bus and no distortion of the bus traffic occurs.
The permanent failure current from battery to ground can be reduced dramatically by using the INH pin as
termination pin for the master pull up (See Figure 10 - Application Circuitry).
If the controller detects a short circuit of the bus to ground (RxD timeout) the transceiver can be set into
sleep mode. The INH pin is floating and in this case the master pull up resistor is disconnected from the bus
line. Additionally the internal slave termination resistor is switched off and only a high impedance termination
is applied to the bus (typ. 75µA). The failure current of the hole system can be reduced by at least ten times
to prevent a fast discharge of the car battery. If the failure disappears, the bus level will become recessive
again and will wake up the system even if no local wake up is present or possible.
4.5 Thermal overload
The TH8082 is protected against thermal overloads. If the chip temperature exceeds the specified value, the
transmitter is switched off until thermal recovery. The receiver is still working while thermal shutdown.
4.6 Undervoltage Vcc
If the ECU regulated supply voltage is missing or decreases under the specified value, the transmitter is
switched off to prevent undefined bus traffic.
TH8082 – Datasheet
3901008082
Page 15 of 26
July 2004
Rev 006
TH8082
Enhanced SoloLIN Transceiver
5. Application Hints
5.1 LIN System Parameter
5.1.1. Bus loading requirements
Parameter
Symbol
Min
Max
Unit
VBAT
8
18
V
Voltage drop of reverse protection diode
VDrop_rev
0.4
0.7
1
V
Voltage drop at the serial diode in pull up path
VSerDiode
0.4
0.7
1
V
Battery shift voltage
VShift_BAT
0
0.1
VBAT
Ground shift voltage
VShift_GND
0
0.1
VBAT
Master termination resistor
Rmaster
900
1000
1100
Ω
Slave termination resistor
Rslave
20
30
60
kΩ
Number of system nodes
N
2
Operating voltage range
Total length of bus line
Typ
16
LENBUS
40
m
150
pF/m
Line capacitance
CLINE
100
Capacitance of master node
CMaster
220
Capacitance of slave node
CSlave
220
250
pF
Total capacitance of the bus including slave and master
capacitance
CBUS
0.47
4
10
nF
RNetwork
500
862
Ω
τ
1
5
µs
Network Total Resistance
Time constant of overall system
pF
Table 2 - Bus loading requirements
TH8082 – Datasheet
3901008082
Page 16 of 26
July 2004
Rev 006
TH8082
Enhanced SoloLIN Transceiver
5.2 Min/max slope time calculation
VBUS
100%
60%
60%
40%
40%
0%
Vdom
tsdom
tsrec
Figure 8 - Slope time and slew rate calculation in accordance to LIN 1.3
The slew rate of the bus voltage is measured between 40% and 60% of the output voltage swing (linear
region). The output voltage swing is the difference between dominant and recessive bus voltage.
dV/dt = 0.2*Vswing / (t40% - t60% )
The slope time is the extension of the slew rate tangent until the upper and lower voltage swing limits:
tslope = 5 * (t40% - t60% )
The slope time of the recessive to dominant edge is directly determined by the slew rate control of the
transmitter:
tslope = Vswing / dV/dt
The dominant to recessive edge is influenced from the network time constant and the slew rate control,
because it’s a passive edge. In case of low battery voltages and high bus loads the rising edge is only
determined by the network. If the rising edge slew rate exceeds the value of the dominant one, the slew rate
control determines the rising edge.
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Enhanced SoloLIN Transceiver
5.3 Duty Cycle Calculation
tBit
tBit
TxD
tdom(max)
VSUP
trec(min)
100%
74.4%
tdom(min)
58.1%
BUS
58.1%
42.2%
28.4%
VSS
trec(max)
28.4%
0%
RxD
Figure 9 - Duty cycle calculation in accordance to LIN 2.0
With the timing parameters shown in Figure 9 two duty cycles , based on trec(min) and trec(max) can be
calculated as follows :
D1 = trec(min) / (2 * tBit)
D2 = trec(max) / (2 * tBit)
For proper operation at 20KBit/s ( tBit = 50µs) the LIN driver has to fulfil the duty cycles specified in chapter
2.4 Dynamic Characteristics for supply voltages of 7 to 18V and the defined standard loads .
Due to this simplified definition there is no need to measure slew rates, slope times, transmitter delays and
dominant voltage levels as specified in the LIN physical layer specification 1.3.
The device within the D1/D2 duty cycle range operates also in applications with reduced bus speed of
10.4KBit/s or below.
In order to minimize EME, the slew rates of the transmitter can be reduced (approximately by 2 times). Such
devices have to fulfil the duty cycle definition D3/D4 in the LIN physical layer specification 2.0. Devices within
this duty cycle range cannot operate in 20KBit/s applications.
TH8082 – Datasheet
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Page 18 of 26
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Enhanced SoloLIN Transceiver
5.4 Application Circuitry
1N4001
VBAT
100nF
10µ
VIN
Voltage
Regulator
SLAVE
ECU
(e.g.NCV8502)
VOUT
10µ
RESET
10k
100nF
47nF
2.7K
VCC
VS
220pF
BUS
RxD
LIN
TH8080
MCU
TxD
GND
1N4001
100nF
10µ
MASTER
ECU
VIN
Voltage
Regulator
ENABLE
10K
(e.g.NCV8501)
RESET
VOUT
10µ
10K
47nF
47nF
100nF
2.7K
VCC INH
VS
TH8082
RxD
MCU
1K
BUS
TxD
220pF
EN
GND
Figure 10 - Application Circuitry
TH8082 – Datasheet
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Page 19 of 26
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Enhanced SoloLIN Transceiver
6. Pin Description
RxD
1
8
INH
EN
2
7
VS
VCC
3
6
BUS
TxD
4
5
GND
TH8082
Figure 11 - Pin description SOIC8 package
Pin
Name
IO-Typ
1
RXD
O
Receive data from BUS to core, LOW in dominant state
2
EN
I
Enables the normal operation mode when HIGH
3
VCC
P
5V supply input
4
TXD
I
Transmit data from core to BUS, LOW in dominant state
5
GND
G
Ground
6
BUS
I/O
LIN bus pin, LOW in dominant state
7
VS
P
Battery input voltage
8
INH
O
Control output for voltage regulator, termination pin for master pull up
TH8082 – Datasheet
3901008082
Description
Page 20 of 26
July 2004
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TH8082
Enhanced SoloLIN Transceiver
7. Mechanical Specification SOIC8
Small Outline Integrated Circiut (SOIC), SOIC 8, 150 mil
A1
B
D
E
e
H
h
L
A
α
ZD
A2
4.80
4.98
3.81
3.99
1.27
5.80
6.20
0.25
0.50
0.41
1.27
1.52
1.72
0°
8°
0.53
1.37
1.57
0.189
0.196
0.150
0.157
0.050
0.016
0.050
0.060
0.068
0°
8°
0.021
0.054
0.062
C
All Dimension in mm, coplanarity < 0.1 mm
min
max
0.10
0.25
0.36
0.46
0.19
0.25
All Dimension in inch, coplanarity < 0.004”
min
max
0.004
0.0098
0.014 0.0075
0.018 0.0098
TH8082 – Datasheet
3901008082
0.2284 0.0099
0.244 0.0198
Page 21 of 26
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Enhanced SoloLIN Transceiver
8. Tape and Reel Specification
8.1 Tape Specification
max. 10°
max. 10°
IC pocket
R
Top View
n.
mi
Sectional View
T2
P0
D0
P2
T
E
G1
< A0 >
F
K0
W
B0
B1
S1
G2
P1
D1
T1
Cover Tape
Abwickelrichtung
Standard Reel with diameter of 13“
Package
Parts per Reel
Width
Pitch
SOIC8
2500
12 mm
8 mm
D0
E
P0
P2
Tmax
T1 max
G1 min
G2 min
B1 max
D1 min
F
P1
Rmin
T2 max
W
1.5
+0.1
1.75
±0.1
4.0
±0.1
2.0
±0.05
0.6
0.1
0.75
0.75
8.2
1.5
5.5
±0.05
4.0
±0.1
30
6.5
12.0
±0.3
A0, B0, K0 can be calculated with package specification.
Cover Tape width 9.2 mm.
TH8082 – Datasheet
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Page 22 of 26
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Enhanced SoloLIN Transceiver
8.2 Reel Specification
W2
W1
B*
D*
C
A
N
Amax
B*
C
D*min
330
2.0 ±0.5
13.0 +0,5/-0,2
20.2
Width of half reel
Nmin
W1
W2 max
4 mm
100,0
4,4
7,1
8 mm
100,0
8,4
11,1
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Enhanced SoloLIN Transceiver
9. ESD/EMC Remarks
9.1 General Remarks
Electronic semiconductor products are sensitive to Electro Static Discharge (ESD).
Always observe Electro Static Discharge control procedures whenever handling semiconductor products.
9.2 ESD-Test
The TH8082 is tested according MIL883D (human body model).
9.3 EMC
The test on EMC impacts is done according to ISO 7637-1 for power supply pins and ISO 7637-3 for dataand signal pins.
Power Supply pin VS:
Testpulse
Condition
Duration
1
t1 = 5 s / US = -100 V / tD = 2 ms
5000 pulses
2
t1 = 0.5 s / US = 100 V / tD = 0.05 ms
5000 pulses
US = -150 V/ US = 100 V
burst 100ns / 10 ms / 90 ms break
1h
3a/b
5
Ri = 0.5 Ω, tD = 400 ms
10 pulses every 1min
tr = 0.1 ms / UP+US = 40 V
Data- and signal pins EN, BUS:
Testpulse
Condition
Duration
1
t1 = 5 s / US = -100 V / tD = 2 ms
1000 pulses
2
t1 = 0.5 s / US = 100 V / tD = 0.05 ms
1000 pulses
US = -150 V/ US = 100 V
burst 100ns / 10 ms / 90 ms break
1000 burst
3a/b
TH8082 – Datasheet
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Page 24 of 26
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TH8082
Enhanced SoloLIN Transceiver
10. Assembly Information
This Melexis device is classified and qualified regarding soldering technology, solderability and moisture
sensitivity level, as defined in this specification, according to following test methods:
ƒ
ƒ
ƒ
ƒ
ƒ
ƒ
IPC/JEDEC J-STD-020
Moisture/Reflow Sensitivity Classification For Nonhermetic Solid State Surface Mount Devices
(classification reflow profiles according to table 5-2)
EIA/JEDEC JESD22-A113
Preconditioning of Nonhermetic Surface Mount Devices Prior to Reliability Testing
(reflow profiles according to table 2)
CECC00802
Standard Method For The Specification of Surface Mounting Components (SMDs) of Assessed
Quality
EIA/JEDEC JESD22-B106
Resistance to soldering temperature for through-hole mounted devices
EN60749-15
Resistance to soldering temperature for through-hole mounted devices
MIL 883 Method 2003 / EIA/JEDEC JESD22-B102
Solderability
For all soldering technologies deviating from above mentioned standard conditions (regarding peak
temperature, temperature gradient, temperature profile etc) additional classification and qualification tests
have to be agreed upon with Melexis.
The application of Wave Soldering for SMD’s is allowed only after consulting Melexis regarding assurance of
adhesive strength between device and board.
Based on Melexis commitment to environmental responsibility, European legislation (Directive on the
Restriction of the Use of Certain Hazardous substances, RoHS) and customer requests, Melexis has
installed a roadmap to qualify their package families for lead free processes also.
Various lead free generic qualifications are running, current results on request.
For more information on Melexis lead free statement
http://www.melexis.com/html/pdf/MLXleadfree-statement.pdf
see
quality
page
at
our
website:
11. Disclaimer
Devices sold by Melexis are covered by the warranty and patent indemnification provisions appearing in its
Term of Sale. Melexis makes no warranty, express, statutory, implied, or by description regarding the
information set forth herein or regarding the freedom of the described devices from patent infringement.
Melexis reserves the right to change specifications and prices at any time and without notice. Therefore,
prior to designing this product into a system, it is necessary to check with Melexis for current information.
This product is intended for use in normal commercial applications. Applications requiring extended
temperature range, unusual environmental requirements, or high reliability applications, such as military,
medical life-support or life-sustaining equipment are specifically not recommended without additional
processing by Melexis for each application.
The information furnished by Melexis is believed to be correct and accurate. However, Melexis shall not be
liable to recipient or any third party for any damages, including but not limited to personal injury, property
damage, loss of profits, loss of use, interrupt of business or indirect, special incidental or consequential
damages, of any kind, in connection with or arising out of the furnishing, performance or use of the technical
data herein. No obligation or liability to recipient or any third party shall arise or flow out of Melexis’ rendering
of technical or other services.
© 2002 Melexis NV. All rights reserved.
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Enhanced SoloLIN Transceiver
Your notes
For the latest version of this document Go to our website at
www.melexis.com
Or for additional information contact Melexis Direct:
Europe and Japan:
Phone: +32 1367 0495
E-mail: [email protected]
All other locations:
Phone: +1 603 223 2362
E-mail: [email protected]
ISO/TS16949 and ISO14001 Certified
TH8082 – Datasheet
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