MMBT3906FZ

MMBT3906FZ
NEW PRODUCT
40V PNP SMALL SIGNAL TRANSISTOR IN DFN0606
Features
Mechanical Data
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BVCEO > -40V
IC = -200mA High Collector Current
PD = 925mW Power Dissipation
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0.36mm2 Package Footprint, 40% Smaller than DFN1006
0.4mm Height Package Minimizing Off-Board Profile
Complementary NPN Type MMBT3904FZ
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
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Case: X2-DFN0606-3
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish — NiPdAu, Solderable per MIL-STD-202,
Method 208 e4
Weight: 0.0008 grams (Approximate)
C
DFN0606-3
B
E
Top View
Bottom View
Device Symbol
Top View
Device Schematic
Ordering Information (Note 4)
Product
MMBT3906FZ-7B
Notes:
Marking
3N
Reel size (inches)
7
Tape width (mm)
8
Quantity per reel
10,000
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
3N = Product Type Marking Code
Top View
Bar Denotes Base
and Emitter Side
MMBT3906FZ
Document number: DS37159 Rev. 1 - 2
1 of 7
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October 2014
© Diodes Incorporated
MMBT3906FZ
Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
VCBO
-40
V
Collector-Emitter Voltage
VCEO
-40
V
Emitter-Base Voltage
VEBO
-6.0
V
IC
-200
mA
ICM
-500
mA
Value
270
925
465
135
Unit
Collector-Base Voltage
Collector Current
NEW PRODUCT
Peak Pulse Collector Current
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Power Dissipation
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Lead
Operating and Storage Temperature Range
Symbol
(Note 5)
(Note 6)
(Note 5)
(Note 6)
(Note 7)
PD
RJA
mW
°C/W
RJL
135
°C/W
TJ, TSTG
-55 to +150
°C
ESD Ratings (Note 8)
Characteristic
Electrostatic Discharge - Human Body Model
Electrostatic Discharge - Machine Model
Notes:
Symbol
ESD HBM
ESD MM
Value
4,000
200
Unit
V
V
JEDEC Class
3A
B
5. For the device mounted on minimum recommended pad layout 1oz copper that is on a single-sided 1.6mm FR4 PCB; device is measured
under still air conditions whilst operating in steady state condition. The entire exposed collector pad is attached to the heatsink.
6. Same as Note 5, except the exposed collector pad is mounted on 25mm x 25mm 2oz copper.
7. Thermal resistance from junction to solder-point (on the exposed collector pad).
8. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
MMBT3906FZ
Document number: DS37159 Rev. 1 - 2
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October 2014
© Diodes Incorporated
MMBT3906FZ
Thermal Characteristics and Derating Information
Max Power Dissipation (W)
-IC Collector Current (A)
0.30
VCE(sat)
Limited
100m
DC
1s
100ms
10ms
10m
1ms
Single Pulse
T amb=25°C
100µs
Minimum Copper
1m
100m
1
10
-VCE Collector-Emitter Voltage (V)
Minimum Copper
0.25
0.20
0.15
0.10
0.05
0.00
0
20
Maximum Power (W)
Minimum Copper
D=0.5
D=0.2
Single Pulse
100
50
0
100µ
Single Pulse
T amb=25°C
D=0.05
D=0.1
1m
10m 100m
1
10
100
1k
Minimum Copper
10
1
0.1
100µ
Pulse Width (s)
Document number: DS37159 Rev. 1 - 2
1m
10m 100m
1
10
100
1k
Pulse Width (s)
Transient Thermal Impedance
MMBT3906FZ
100 120 140 160
100
250
200
150
80
T amb=25°C
350
300
60
Derating Curve
500
450
400
40
Temperature (°C)
Safe Operating Area
Thermal Resistance (°C/W)
NEW PRODUCT
1
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Pulse Power Dissipation
October 2014
© Diodes Incorporated
MMBT3906FZ
Electrical Characteristics
(@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS
Symbol
Min
Max
Unit
Collector-Base Breakdown Voltage
BVCBO
-40
—
V
IC = -100µA, IE = 0
Collector-Emitter Breakdown Voltage (Note 9)
BVCEO
-40
—
V
IC = -10.0mA, IB = 0
Emitter-Base Breakdown Voltage
BVEBO
-6.0
—
V
IE = -100µA, IC = 0
ICEX
—
-50
nA
VCE = -30V, VEB(OFF) = -3.0V
ICBO
—
-50
nA
VCB = -30V, IE = 0
IBL
—
-50
nA
VCE = -30V, VEB(OFF) = -3.0V
hFE
60
80
100
60
30
—
—
300
—
—
—
IC = -100µA, VCE = -1.0V
IC = -1.0mA, VCE = -1.0V
IC = -10mA, VCE = -1.0V
IC = -50mA, VCE = -1.0V
IC = -100mA, VCE = -1.0V
Collector-Emitter Saturation Voltage
VCE(sat)
—
-0.25
-0.40
V
IC = -10mA, IB = -1.0mA
IC = -50mA, IB = -5.0mA
Base-Emitter Saturation Voltage
VBE(sat)
-0.65
—
-0.85
-0.95
V
IC = -10mA, IB = -1.0mA
IC =- 50mA, IB = -5.0mA
Output Capacitance
Cobo
—
4.5
pF
VCB = -5.0V, f = 1.0MHz, IE = 0
Input Capacitance
Cibo
—
10
pF
VEB = -0.5V, f = 1.0MHz, IC = 0
fT
300
—
MHz
Delay Time
td
—
35
ns
Rise Time
tr
—
35
ns
Storage Time
ts
—
225
ns
tf
—
75
ns
Collector Cutoff Current
NEW PRODUCT
Collector Cutoff Current
Base Cutoff Current
Test Condition
ON CHARACTERISTICS (Note 9)
DC Current Gain
SMALL SIGNAL CHARACTERISTICS
Current Gain-Bandwidth Product
VCE = -20V, IC = -10mA,
f = 100MHz
SWITCHING CHARACTERISTICS
Fall Time
Note:
VCC = -3.0V, IC = -10mA,
VBE(off) = 0.5V, IB1 = -1.0mA
VCC = -3.0V, IC = -10mA,
IB1 = IB2 = -1.0mA
9. Measured under pulsed conditions. Pulse width  300µs. Duty cycle  2%.
MMBT3906FZ
Document number: DS37159 Rev. 1 - 2
4 of 7
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October 2014
© Diodes Incorporated
MMBT3906FZ
Typical Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
0.20
400
IB = -2mA
IB = -1.8mA
350
IB = -1.2mA
0.12
IB = -1mA
IB = -0.8mA
0.08
300
IB = -0.6mA
IB = -0.4mA
TA = 125°C
250
TA = 85°C
200
TA = 25°C
150
100
TA = -55°C
0.04
0
0
50
0
1
2
3
4
5
-VCE, COLLECTOR-EMITTER VOLTAGE (V)
Fig. 4 Typical Collector Current
vs. Collector-Emitter Voltage
1
10
100
-IC, COLLECTOR CURRENT (mA)
Fig. 5 Typical DC Current Gain vs. Collector Current
1
1
IC/IB = 10
IC/IB = 20
-VCE(SAT), COLLECTOR-EMITTER
SATURATION VOLTAGE (V)
-VCE(SAT), COLLECTOR-EMITTER
SATURATION VOLTAGE (V)
VCE = 1V
TA = 150°C
IB = -1.4mA
hFE, DC CURRENT GAIN
-IC, COLLECTOR CURRENT (A)
0.16
IB = -0.2mA
T A = 150°C
0.1
T A = 125°C
TA = 85°C
T A = 25°C
TA = -55°C
1.2
Gain = 10
1.0
0.8
TA = -55°C
TA = 25°C
0.6
TA = 150°C
TA = 125°C
0.4
TA = 85°C
0.2
0.1
1
10
100
1,000
-IC, COLLECTOR CURRENT (mA)
Fig. 8 Typical Base-Emitter Saturation Voltage
vs. Collector Current
MMBT3906FZ
Document number: DS37159 Rev. 1 - 2
T A = 125°C
TA = 85°C
T A = 25°C
TA = -55°C
1
10
100
1,000
-IC, COLLECTOR CURRENT (mA)
Fig. 7 Typical Collector-Emitter Saturation Voltage
vs. Collector Current
10
100
1,000
-IC, COLLECTOR CURRENT (mA)
Fig. 6 Typical Collector-Emitter Saturation Voltage
vs. Collector Current
-VBE(SAT), BASE-EMITTER SATURATION VOLTAGE (V)
1
T A = 150°C
0.1
0.01
0.1
0.01
-VBE(ON), BASE-EMITTER TURN-ON VOLTAGE (V)
NEW PRODUCT
IB = -1.6mA
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1.2
Gain = 10
1.0
0.8
0.6
TA = -55°C
TA = 25°C
TA = 150°C
0.4
0.2
0.1
TA = 125°C
TA = 85°C
1
10
100
1,000
-IC, COLLECTOR CURRENT (mA)
Fig. 9 Typical Base-Emitter Saturation Voltage
vs. Collector Current
October 2014
© Diodes Incorporated
MMBT3906FZ
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version.
A
A1
NEW PRODUCT
Seating Plane
D
D2
e/2
D3
E2
e
b(2x)
k
E
X2-DFN0606-3
Dim
Min
Max
Typ
A
0.36
0.42
0.39
A1
0
0.05
0.02
b
0.10
0.20
0.15
D
0.57
0.67
0.62
D2
0.155 BSC
D3
0.185 BSC
E
0.57
0.67
0.62
E2
0.40
0.60
0.50
e
0.35 BSC
k
0.16 REF
L
0.09
0.21
0.15
L2
0.11
0.31
0.21
All Dimensions in mm
L2
L(2x)
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
X
Dimensions
C
X
X1
X2
Y
Y1
Y
C
Y1
X1
Value (in mm)
0.350
0.280
0.350
0.760
0.200
0.600
X2
MMBT3906FZ
Document number: DS37159 Rev. 1 - 2
6 of 7
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October 2014
© Diodes Incorporated
MMBT3906FZ
IMPORTANT NOTICE
NEW PRODUCT
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2014, Diodes Incorporated
www.diodes.com
MMBT3906FZ
Document number: DS37159 Rev. 1 - 2
7 of 7
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October 2014
© Diodes Incorporated