DMP32D9UFZ

DMP32D9UFZ
P-CHANNEL ENHANCEMENT MODE MOSFET
NEW PRODUCT
NEW PRODUCT
Product Summary
V(BR)DSS
RDS(ON) max
-30V
5Ω @ VGS = -4.5V
6Ω @ VGS = -2.5V
7Ω @ VGS = -1.8V
10Ω @ VGS = -1.5V
Features and Benefits
ID max
TA = +25°C
-0.2A
Description and Applications
This MOSFET has been designed to minimize the on-state resistance
(RDS(ON)) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
•
Low Package Profile, 0.42mm Maximum Package height
•
0.62mm x 0.62mm Package Footprint
•
Low On-Resistance
•
Very low Gate Threshold Voltage, 1.0V max
•
ESD Protected Gate
•
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
•
Halogen and Antimony Free. “Green” Device (Note 3)
Mechanical Data
•
•
Case: X2-DFN0606-3
Case Material: Molded Plastic, “Green” Molding Compound
•
General Purpose Interfacing Switch
•
Power Management Functions
•
Moisture Sensitivity: Level 1 per J-STD-020
•
Analog Switch
•
Terminals: Finish – NiPdAu over Copper leadframe
Solderable per MIL-STD-202, Method 208 e4
•
Weight: 0.001 grams (approximate)
UL Flammability Classification Rating 94V-0
ESD PROTECTED
Bottom View
Equivalent Circuit
Top View
Package Pin Configuration
Ordering Information (Note 4)
Part Number
DMP32D9UFZ-7B
Notes:
Case
X2-DFN0606-3
Packaging
10K/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
U2 = Product Type Marking Code
Top View
Bar Denotes Gate
and Source Side
DMP32D9UFZ
Document number: DS36842 Rev. 2 - 2
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DMP32D9UFZ
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Symbol
Value
Drain-Source Voltage
Characteristic
VDSS
-30
V
Gate-Source Voltage
VGSS
±10
V
ID
-200
-100
mA
IDM
-500
mA
NEW PRODUCT
NEW PRODUCT
Continuous Drain Current (Note 5) VGS = -4.5V
TA = +25°C
TA = +70°C
Steady
State
Pulsed Drain Current (Note 6)
Units
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Symbol
Value
Total Power Dissipation (Note 5)
Characteristic
Steady State
PD
390
mW
Thermal Resistance, Junction to Ambient (Note 5)
Steady State
RθJA
322
°C/W
TJ, TSTG
-55 to +150
°C
Operating and Storage Temperature Range
Units
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Symbol
Min
Typ
BVDSS
-30
—
—
V
VGS = 0V, ID = -250μA
IDSS
—
—
100
nA
VDS = -24V, VGS = 0V
IGSS
—
—
±10
µA
VGS = ±10V, VDS = 0V
VGS(th)
-0.4
—
-1.0
V
VDS = VGS, ID = -250μA
—
—
5
—
—
6
—
—
7
—
—
10
—
6
—
VSD
—
-0.75
-1.0
V
Input Capacitance
Ciss
—
22.5
—
pF
Output Capacitance
Coss
—
2.9
—
pF
Reverse Transfer Capacitance
Crss
—
2.1
—
pF
Total Gate Charge
Qg
—
0.35
—
nC
Gate-Source Charge
Qgs
—
0.06
—
nC
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
@TC = +25°C
Max
Unit
Test Condition
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage
RDS (ON)
VGS = -4.5V, ID = -100mA
VGS = -2.5V, ID = -50mA
Ω
VGS = -1.8V, ID = -20mA
VGS = -1.5V, ID = -10mA
VGS = -1.2V, ID = -1mA
VGS = 0V, IS = -10mA
DYNAMIC CHARACTERISTICS (Note 8)
Gate-Drain Charge
Qgd
—
0.09
—
nC
Turn-On Delay Time
tD(on)
—
3.1
—
ns
Turn-On Rise Time
tr
—
2.3
—
ns
tD(off)
—
19.9
—
ns
tf
—
10.5
—
ns
Turn-Off Delay Time
Turn-Off Fall Time
Notes:
VDS = -15V, VGS = 0V,
f = 1.0MHz
VGS = -4.5V, VDS =- 15V,
ID = -200mA
VDD = -10V, VGS = -4.5V,
RG = 6Ω, ID = -200mA
5. Device mounted on FR-4 PCB, with minimum recommended pad layout.
6. Device mounted on minimum recommended pad layout test board, 10μs pulse duty cycle = 1%.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
DMP32D9UFZ
Document number: DS36842 Rev. 2 - 2
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DMP32D9UFZ
0.8
0.5
VGS = -3.5V
0.6
0.5
VGS = -2.0V
0.4
0.3
VGS = -1.5V
0.2
0.0
VGS = -1.0V
0
1
2
3
4
-VDS, DRAIN -SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristics
0.2
10
VGS = -1.5V
VGS = -1.8V
VGS = -2.5V
VGS = -4.5V
1
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7
-ID, DRAIN SOURCE CURRENT (A)
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
0.8
RDS(on), DRAIN-SOURCE ON-RESISTANCE (Ω)
VGS = -4.5V
ID = -300mA
1.6
1.4
VGS = -2.5V
ID = -100mA
1.2
1
0.8
0.6
-50
0
5
1.8
RDS(ON), DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
0.3
0.1
VGS = -1.2V
100
0.1
0.4
TA = 150°C
0.1
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
VDS = -5.0V
VGS = -3.0V
VGS = -2.5V
-ID, DRAIN CURRENT (A)
VGS = -4.0V
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
-ID, DRAIN CURRENT (A)
0.7
NEW PRODUCT
NEW PRODUCT
0.6
VGS = -4.5V
-25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 5 On-Resistance Variation with Temperature
DMP32D9UFZ
Document number: DS36842 Rev. 2 - 2
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T A = 85°C
TA = 125°C
TA = 25°C
TA = -55° C
0
0.5
1
1.5
2
2.5
-VGS, GATE-SOURCE VOLTAGE (V)
Figure 2 Typical Transfer Characteristics
3
8
VGS = -4.5V
7
6
TA = 150°C
5
TA = 125°C
4
TA = 85°C
3
T A = 25°C
TA = -55°C
2
1
0
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7
-ID, DRAIN SOURCE CURRENT (A)
Figure 4 Typical On-Resistance vs.
Drain Current and Temperature
0.8
6
5
4
VGS = -2.5V
ID = -100mA
3
VGS = -4.5V
ID = -300mA
2
1
0
-50
-25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 6 On-Resistance Variation with Temperature
June 2014
© Diodes Incorporated
DMP32D9UFZ
0.8
0.8
-IS, SOURCE CURRENT (A)
VGS(TH), GATE THRESHOLD VOLTAGE (V)
0.7
0.9
-I D = 1mA
0.7
-ID = 250µA
0.6
0.5
0.6
0.5
0.4
T A= 150 °C
0.3
TA= 85°C
TA= 125°C
0.2
TA= 25°C
0.1
0.4
-50
00
-25
0
25
50
75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Figure 7 Gate Threshold Variation vs. Ambient Temperature
100
T A= -55°C
0.3
0.6
0.9
1.2
-VSD, SOURCE-DRAIN VOLTAGE (V)
Figure 8 Diode Forward Voltage vs. Current
1.5
10
f = 1MHz
-VGS, GATE-SOURCE VOLTAGE (V)
CT, JUNCTION CAPACITANCE (pF)
Ciss
10
Coss
Crss
1
0
4
8
12
16
20
24
-VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 9 Typical Junction Capacitance
1
r(t), TRANSIENT THERMAL RESISTANCE
NEW PRODUCT
NEW PRODUCT
1
28
8
6
VDS = -15V
ID = -200mA
4
2
0
0
0.1
0.2 0.3 0.4 0.5 0.6 0.7
Qg, TOTAL GATE CHARGE (nC)
Figure 10 Gate-Charge Characteristics
0.8
D = 0.9
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.05
D = 0.02
0.01
D = 0.01
D = 0.005
RθJA(t) = r(t) * RθJA
RθJA = 325°C/W
Duty Cycle, D = t1/ t2
Single Pulse
0.001
0.000001
0.00001
DMP32D9UFZ
Document number: DS36842 Rev. 2 - 2
0.0001
0.001
0.01
0.1
1
t1, PULSE DURATION TIMES (sec)
Figure 11 Transient Thermal Resistance
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10
100
1000
June 2014
© Diodes Incorporated
DMP32D9UFZ
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version.
Seating Plane
D
2
D
3
D
2
/
e
E
2
E
e
k
x
2
b
NEW PRODUCT
NEW PRODUCT
1
A
A
X2-DFN0606-3
Dim
Min
Max
Typ
A
0.36
0.42
0.39
A1
0
0.05
0.02
b
0.10
0.20
0.15
D
0.57
0.67
0.62
D2
0.155 BSC
D3
0.185 BSC
E
0.57
0.67
0.62
E2
0.40
0.60
0.50
e
0.35 BSC
k
0.16 REF
L
0.09
0.21
0.15
L2
0.11
0.31
0.21
All Dimensions in mm
2
L
︵ ︶
x
2
L
︵ ︶
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
X
Y
Dimensions
1
Y
C
C
X
X1
X2
Y
Y1
1
X
Value
(in mm)
0.350
0.280
0.350
0.760
0.200
0.600
2
X
DMP32D9UFZ
Document number: DS36842 Rev. 2 - 2
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IMPORTANT NOTICE
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NEW PRODUCT
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INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
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written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
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Copyright © 2014, Diodes Incorporated
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DMP32D9UFZ
Document number: DS36842 Rev. 2 - 2
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