DMN2990UFZ

DMN2990UFZ
20V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
RDS(ON) max
ID max
TA = +25°C
•
Low Package Profile, 0.42mm Maximum Package Height
•
0.62mm x 0.62mm Package Footprint
0.99Ω @ VGS = 4.5V
250mA
•
Low On-Resistance
1.2Ω @ VGS = 2.5V
230mA
•
Very Low Gate Threshold Voltage, 1.0V Max
1.8Ω @ VGS = 1.8V
180mA
•
ESD Protected Gate
•
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
•
Halogen and Antimony Free. “Green” Device (Note 3)
•
Qualified to AEC-Q101 standards for High Reliability
NEW PRODUCT
ADVANCED INFORMATION
NEW PRODUCT
V(BR)DSS
20V
Features and Benefits
150mA
2.4Ω @ VGS = 1.5V
Description
This MOSFET is designed to minimize the on-state resistance
(RDS(ON)) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Mechanical Data
•
•
Case: X2-DFN0606-3
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Applications
•
Moisture Sensitivity: Level 1 per J-STD-020
•
General Purpose Interfacing Switch
•
•
Power Management Functions
Terminals: Finish – NiPdAu over Copper Leadframe
Solderable per MIL-STD-202, Method 208 e4
•
Analog Switch
•
Weight: 0.001 grams (Approximate)
X2-DFN0606-3
ESD PROTECTED
Bottom View
Equivalent Circuit
Top View
Package Pin Configuration
Ordering Information (Note 4)
Part Number
DMN2990UFZ-7B
Notes:
Case
X2-DFN0606-3
Packaging
10K/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
X2-DFN0606-3
6N = Product Type Marking Code
Top View
Bar Denotes Gate
and Source Side
DMN2990UFZ
Document number: DS36693 Rev. 4 - 2
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January 2015
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DMN2990UFZ
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
NEW PRODUCT
ADVANCED INFORMATION
NEW PRODUCT
Symbol
Value
Units
Drain-Source Voltage
VDSS
20
V
Gate-Source Voltage
VGSS
±8
V
ID
250
170
mA
IDM
800
mA
Continuous Drain Current (Note 5) VGS = 4.5V
TA = +25°C
TA = +85°C
Steady
State
Pulsed Drain Current (Note 6)
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Symbol
Value
Total Power Dissipation (Note 5)
Characteristic
Steady state
PD
320
mW
Thermal Resistance, Junction to Ambient (Note 5)
Steady state
RθJA
402
°C/W
TJ, TSTG
-55 to +150
°C
Operating and Storage Temperature Range
Units
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
@TC = +25°C
Symbol
Min
Typ
Max
Unit
Test Condition
BVDSS
20
—
—
V
VGS = 0V, ID = 250μA
IDSS
—
—
100
nA
VDS = 16V, VGS = 0V
IGSS
—
—
±100
nA
VGS = ±5V, VDS = 0V
VGS(th)
0.4
—
1.0
V
VDS = VGS, ID = 250μA
—
0.60
0.99
VGS = 4.5V, ID = 100mA
—
0.75
1.2
VGS = 2.5V, ID = 50mA
—
0.90
1.8
—
1.2
2.4
—
2.0
—
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
RDS(ON)
Ω
VGS = 1.8V, ID = 20mA
VGS = 1.5V, ID = 10mA
VGS = 1.2V, ID = 1mA
Forward Transfer Admittance
|Yfs|
180
—
—
mS
VDS = 10V, ID = 400mA
Diode Forward Voltage
VSD
—
0.6
1.0
V
VGS = 0V, IS = 150mA
Input Capacitance
Ciss
—
28.2
55.2
pF
Output Capacitance
Coss
—
4.0
8.0
pF
Reverse Transfer Capacitance
DYNAMIC CHARACTERISTICS (Note 8)
Crss
—
2.8
5.6
pF
Total Gate Charge
Qg
—
0.5
1.0
nC
Gate-Source Charge
Qgs
—
0.07
0.14
nC
Gate-Drain Charge
Qgd
—
0.07
0.14
nC
Turn-On Delay Time
tD(on)
—
3.5
10
ns
Turn-On Rise Time
tr
—
2.1
10
ns
Turn-Off Delay Time
tD(off)
—
22
35
ns
tf
—
7.7
15
ns
Turn-Off Fall Time
Notes:
VDS = 16V, VGS = 0V,
f = 1.0MHz
VGS = 4.5V, VDS = 10V,
ID = 250mA
VDD = 10V, VGS = 4.5V,
RL = 47Ω, RG = 10Ω,
ID = 200mA
5. Device mounted on FR-4 PCB, with minimum recommended pad layout.
6. Device mounted on minimum recommended pad layout test board, 10μs pulse duty cycle = 1%.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
DMN2990UFZ
Document number: DS36693 Rev. 4 - 2
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January 2015
© Diodes Incorporated
DMN2990UFZ
0.8
0.8
VGS = 4.5V
VGS = 2.0V
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
0.7
VGS = 2.5V
0.6
VGS = 1.5V
0.5
0.4
0.3
0.2
VGS = 1.2V
0.1
0.6
0.5
0.4
TA = 150°C
0.3
TA = 125°C
0.2
TA = 85°C
T A = 25°C
0.1
T A = -55°C
VGS = 1.0V
0.0
0
0.5
1
1.5
2
2.5
3
3.5
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristic
0
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
1.2
VGS = 1.8V
0.9
VGS = 2.5V
0.6
VGS = 4.5V
0.3
0
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
ID, DRAIN-SOURCE CURRENT (A)
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
DMN2990UFZ
Document number: DS36693 Rev. 4 - 2
0
4
1.5
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
NEW PRODUCT
ADVANCED INFORMATION
NEW PRODUCT
0.7
VDS = 5.0V
1
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0.5
1
1.5
2
2.5
VGS, GATE-SOURCE VOLTAGE (V)
Figure 2 Typical Transfer Characteristics
3
5
4
ID = 100mA
3
ID = 50mA
2
1
ID = 20mA
0
0
1
2
3
4
5
6
7
VGS, GATE-SOURCE VOLTAGE (V)
Figure 4 Typical Transfer Characteristics
8
January 2015
© Diodes Incorporated
DMN2990UFZ
0.80
RDS(ON), DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
2.5
VGS = 4.5V
TA = 150°C
TA = 125°C
T A = 85°C
0.60
TA = 25°C
0.40
TA = -55°C
0.20
2
0
0.1
0.2 0.3 0.4 0.5 0.6 0.7
ID, DRAIN CURRENT (A)
Figure 5 Typical On-Resistance vs.
Drain Current and Temperature
VGS = 4.5V
ID = 300mA
1.5
1
VGS = 2.5V
ID = 150mA
0.5
0.00
0
-50
0.8
-25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (° C)
Figure 6 On-Resistance Variation with Temperature
1.5
1
VGS(th), GATE THRESHOLD VOLTAGE (V)
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
NEW PRODUCT
ADVANCED INFORMATION
NEW PRODUCT
1.00
1.2
VGS = 4.5V
ID = 300mA
0.9
0.6
VGS = 2.5V
ID = 150mA
0.3
0
-50
-25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 7 On-Resistance Variation with Temperature
DMN2990UFZ
Document number: DS36693 Rev. 4 - 2
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0.9
0.8
ID = 1mA
0.7
ID = 250µA
0.6
0.5
0.4
TJ, JUNCTION TEMPERATURE (°C)
Figure 8 Gate Threshold Variation vs. Ambient Temperature
January 2015
© Diodes Incorporated
DMN2990UFZ
1
100
CT, JUNCTION CAPACITANCE (pF)
0.9
IS, SOURCE CURRENT (A)
0.7
TA = 150°C
0.6
TA = 125°C
0.5
TA = 25°C
0.3
Ciss
10
TA = 85°C
0.4
T A = -55°C
0.2
Coss
Crss
0.1
f = 1MHz
0
0
8
VGS GATE THRESHOLD VOLTAGE (V)
NEW PRODUCT
ADVANCED INFORMATION
NEW PRODUCT
0.8
0.3
0.6
0.9
1.2
1.5
VSD, SOURCE-DRAIN VOLTAGE (V)
Figure 9 Diode Forward Voltage vs. Current
1
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 10 Typical Junction Capacitance
VDS = 10V
ID = 250mA
6
4
2
0
0
0.2
0.4
0.6
Qg, TOTAL GATE CHARGE (nC)
Figure 11 Gate Charge
DMN2990UFZ
Document number: DS36693 Rev. 4 - 2
0.8
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Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version.
NEW PRODUCT
ADVANCED INFORMATION
NEW PRODUCT
1
A
A
Seating Plane
D
X2-DFN0606-3
Dim
Min
Max
Typ
A
0.36
0.40
0.39
A1
0
0.05
0.02
b
0.10
0.20
0.15
D
0.57
0.67
0.62
D2
0.155 BSC
D3
0.185 BSC
E
0.57
0.67
0.62
E2
0.40
0.60
0.50
e
0.35 BSC
k
0.16 REF
L
0.09
0.21
0.15
L2
0.11
0.31
0.21
All Dimensions in mm
2
D
3
D
2
/
e
E
2
E
e
k
x
2
b
2
L
︵ ︶
x
2
L
︵ ︶
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
X2-DFN0606-3
X
Y
1
Y
C
Dimensions
C
X
X1
X2
Y
Y1
Value (in mm)
0.350
0.280
0.350
0.760
0.200
0.600
1
X
2
X
DMN2990UFZ
Document number: DS36693 Rev. 4 - 2
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DMN2990UFZ
IMPORTANT NOTICE
NEW PRODUCT
ADVANCED INFORMATION
NEW PRODUCT
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INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
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Copyright © 2015, Diodes Incorporated
www.diodes.com
DMN2990UFZ
Document number: DS36693 Rev. 4 - 2
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January 2015
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