TC1301A/B Dual LDO with Microcontroller RESET Function Features Description • Dual Output LDO with Microcontroller Reset Monitor Functionality: - VOUT1 = 1.5V to 3.3V @ 300 mA - VOUT2 = 1.5V to 3.3V @ 150 mA - VRESET = 2.20V to 3.20V • Output Voltage and RESET Threshold Voltage Options Available (See Table 8-1) • Low Dropout Voltage: - VOUT1 = 104 mV @ 300 mA (typical) - VOUT2 = 150 mV @ 150 mA, (typical) • Low Supply Current: 116 µA (typical), TC1301A/B with both output voltages available • Reference Bypass Input for Low-Noise Operation • Both Output Voltages Stable with a Minimum of 1 µF Ceramic Output Capacitor • Separate Input for RESET Detect Voltage (TC1301A) • Separate VOUT1 and VOUT2 SHDN pins (TC1301B) • RESET Output Duration: 300 ms (typical) • Power-Saving Shutdown Mode of Operation • Wake-up from SHDN: 5.3 µs (typical) • Small 8-pin DFN and MSOP Package Options • Operating Junction Temperature Range: - -40°C to +125°C • Overtemperature and Overcurrent Protection The TC1301A/B combines two Low Dropout (LDO) regulators and a microcontroller RESET function into a single 8-pin MSOP or DFN package. Both regulator outputs feature low dropout voltage, 104 mV @ 300 mA for VOUT1, 150 mV @ 150 mA for VOUT2, low quiescent current consumption, 58 µA each and a typical regulation accuracy of 0.5%. Several fixedoutput voltage and detector voltage combinations are available. A reference bypass pin is available to further reduce output noise and improve the power supply rejection ratio of both LDOs. Applications • • • • • • Cellular/GSM/PHS Phones Battery-Operated Systems Hand-Held Medical Instruments Portable Computers/PDAs Linear Post-Regulators for SMPS Pagers Related Literature • AN765, “Using Microchip’s Micropower LDOs”, DS00765, Microchip Technology Inc., 2002 • AN766, “Pin-Compatible CMOS Upgrades to BiPolar LDOs”, DS00766, Microchip Technology Inc., 2002 • AN792, “A Method to Determine How Much Power a SOT23 Can Dissipate in an Application”, DS00792, Microchip Technology Inc., 2001 © 2008 Microchip Technology Inc. The TC1301A/B is stable over all line and load conditions with a minimum of 1 µF of ceramic output capacitance, and utilizes a unique compensation scheme to provide fast dynamic response to sudden line voltage and load current changes. For the TC1301A, the microcontroller RESET function operates independently of both VOUT1 and VOUT2. The input to the RESET function is connected to the VDET pin.The SHDN2 pin is used to control the output of VOUT2 only. VOUT1 will power-up and down with VIN. In the case of the TC1301B, the detect voltage input of the RESET function is connected internally to VOUT1. Both VOUT1 and VOUT2 have independent shutdown capability. Additional features include an overcurrent limit and overtemperature protection that, when combined, provide a robust design for all load fault conditions. Package Types 8-Pin DFN/MSOP TC1301A MSOP8 DFN8 RESET 1 6 VOUT2 GND 3 Bypass 4 7 VIN VOUT1 2 7 VIN VOUT1 2 8 VDET RESET 1 8 VDET 5 SHDN2 6 VOUT2 GND 3 Bypass 4 5 SHDN2 TC1301B MSOP8 DFN8 RESET 1 VOUT1 2 GND 3 Bypass 4 8 SHDN1 7 VIN 6 VOUT2 5 SHDN2 RESET 1 VOUT1 2 GND 3 Bypass 4 8 SHDN1 7 VIN 6 VOUT2 5 SHDN2 DS21798C-page 1 TC1301A/B Functional Block Diagrams TC1301B TC1301A VOUT1 VIN VOUT1 VIN LDO #1 300 mA SHDN1 LDO #1 300 mA SHDN2 LDO #2 150 mA VOUT2 GND Bandgap Reference 1.2V Bypass Threshold Detector GND Bypass VDET RESET Time Delay 300 ms, typ Bandgap Reference 1.2V Threshold Detector VOUT1 LDO #2 150 mA SHDN2 VDET VOUT2 RESET Time Delay 300 ms typ Typical Application Circuits TC1301A System RESET 2.8V @ 300 mA COUT1 1 µF Ceramic X5R 1 RESET 2 V OUT1 3 4 GND VDET 8 BATTERY VIN 7 VOUT2 6 2.6V @ 150 mA Bypass SHDN2 CIN 1 µF COUT2 1 µF Ceramic X5R 5 CBYPASS(Note) 10 nF Ceramic 2.7V to 4.2V ON/OFF Control VOUT2 ON/OFF Control VOUT1 TC1301B System RESET 2.8V @ 300 mA COUT1 1 µF Ceramic X5R 1 2 V OUT1 3 4 Note: CBYPASS is optional DS21798C-page 2 RESET SHDN1 GND 8 VIN 7 BATTERY VOUT2 6 2.6V @ 150 mA Bypass SHDN2 5 CIN 1 µF COUT2 1 µF Ceramic X5R 2.7V to 4.2V ON/OFF Control VOUT2 © 2008 Microchip Technology Inc. TC1301A/B 1.0 ELECTRICAL CHARACTERISTICS † Notice: Stresses above those listed under “Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at those or any other conditions above those indicated in the operational listings of this specification is not implied. Exposure to maximum rating conditions for extended periods may affect device reliability. Absolute Maximum Ratings † VDD...................................................................................6.5V Maximum Voltage on Any Pin ...... (VSS – 0.3) to (VIN + 0.3)V Power Dissipation ..........................Internally Limited (Note 7) Storage temperature .....................................-65°C to +150°C Maximum Junction Temperature, TJ ........................... +150°C Continuous Operating Temperature Range ..-40°C to +125°C ESD protection on all pins, HBM, MM ..................... 4 kV, 400V DC CHARACTERISTICS Electrical Specifications: Unless otherwise noted, VIN = VR +1V, IOUT1 = IOUT2 = 100 µA, CIN = 4.7 µF, COUT1 = COUT2 = 1 µF, CBYPASS = 10 nF, SHDN > VIH, TA = +25°C. Boldface type specifications apply for junction temperatures of -40°C to +125°C. Parameters Input Operating Voltage Sym Min Typ Max Units VIN 2.7 — 6.0 V Conditions Note 1 Maximum Output Current IOUT1Max 300 — — mA VIN = 2.7V to 6.0V (Note 1) Maximum Output Current IOUT2Max 150 — — mA VIN = 2.7V to 6.0V (Note 1) Output Voltage Tolerance (VOUT1 and VOUT2) VOUT VR – 2.5 VR±0.5 VR + 2.5 % Note 2 Note 3 Temperature Coefficient (VOUT1 and VOUT2) TCVOUT — 25 — ppm/°C Line Regulation (VOUT1 and VOUT2) ΔVOUT/ ΔVIN — 0.02 0.2 %/V Load Regulation, VOUT ≥ 2.5V (VOUT1 and VOUT2) ΔVOUT/ VOUT -1 0.1 +1 % IOUTX = 0.1 mA to IOUTMax (Note 4) Load Regulation, VOUT < 2.5V (VOUT1 and VOUT2) ΔVOUT/ VOUT -1.5 0.1 +1.5 % IOUTX = 0.1 mA to IOUTMax (Note 4) ΔVOUT/ΔPD — 0.04 — %/W VOUT1 ≥ 2.7V VIN – VOUT — 104 180 mV IOUT1 = 300 mA VOUT2 ≥ 2.6V VIN – VOUT — 150 250 mV IOUT2 = 150 mA TC1301A IIN(A) — 103 180 µA SHDN2 = VIN, VDET = OPEN, IOUT1 = IOUT2 = 0 mA TC1301B IIN(B) — 114 180 µA SHDN1 = SHDN2 = VIN, IOUT1 = IOUT2 = 0 mA Thermal Regulation (VR+1V) ≤ VIN ≤ 6V Note 5 Dropout Voltage (Note 6) Supply Current Note 1: 2: 3: 4: 5: 6: 7: The minimum VIN has to meet two conditions: VIN ≥ 2.7V and VIN ≥ VR + VDROPOUT. VR is defined as the higher of the two regulator nominal output voltages (VOUT1 or VOUT2). TCVOUT = ((VOUTmax - VOUTmin) * 106)/(VOUT * ΔT). Regulation is measured at a constant junction temperature using low duty-cycle pulse testing. Load regulation is tested over a load range from 0.1 mA to the maximum specified output current. Changes in output voltage due to heating effects are covered by the thermal regulation specification. Thermal regulation is defined as the change in output voltage at a time t after a change in power dissipation is applied, excluding load or line regulation effects. Specifications are for a current pulse equal to ILMAX at VIN = 6V for t = 10 ms. Dropout voltage is defined as the input-to-output voltage differential at which the output voltage drops 2% below its value measured at a 1V differential. The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction temperature and the thermal resistance from junction-to-air (i.e., TA, TJ, θJA). Exceeding the maximum allowable power dissipation causes the device to initiate thermal shutdown. © 2008 Microchip Technology Inc. DS21798C-page 3 TC1301A/B DC CHARACTERISTICS (CONTINUED) Electrical Specifications: Unless otherwise noted, VIN = VR +1V, IOUT1 = IOUT2 = 100 µA, CIN = 4.7 µF, COUT1 = COUT2 = 1 µF, CBYPASS = 10 nF, SHDN > VIH, TA = +25°C. Boldface type specifications apply for junction temperatures of -40°C to +125°C. Parameters Sym Min Typ Max Units Shutdown Supply Current TC1301A IIN_SHDNA — 58 90 µA SHDN2 = GND, VDET = OPEN Shutdown Supply Current TC1301B IIN_SHDNB — 0.1 1 µA SHDN1 = SHDN2 = GND PSRR — 58 — dB f ≤ 100 Hz, IOUT1 = IOUT2 = 50 mA, CIN = 0 µF eN — 830 — nV/(Hz)½ Power Supply Rejection Ratio Output Noise Conditions f ≤ 1 kHz, IOUT1 = IOUT2 = 50 mA, CIN = 0 µF Output Short-Circuit Current (Average) VOUT1 IOUTsc — 200 — mA RLOAD1 ≤ 1Ω VOUT2 IOUTsc — 140 — mA RLOAD2 ≤ 1Ω SHDN Input High Threshold VIH 45 — — %VIN VIN = 2.7V to 6.0V SHDN Input Low Threshold VIL — — 15 %VIN VIN = 2.7V to 6.0V Wake-Up Time (From SHDN mode), (VOUT2) tWK — 5.3 20 µs VIN = 5V, IOUT1 = IOUT2 = 30 mA, See Figure 5-1 tS — 50 — µs VIN = 5V, IOUT1 = IOUT2 = 50 mA, See Figure 5-2 Thermal Shutdown Die Temperature TSD — 150 — °C VIN = 5V, IOUT1 = IOUT2 = 100 µA Thermal Shutdown Hysteresis THYS — 10 — °C VIN = 5V Voltage Range VDET 1.0 1.2 — 6.0 6.0 V TA = 0°C to +70°C TA = -40°C to +125°C RESET Threshold VTH -1.4 — +1.4 % -2.8 — +2.8 % ΔVTH/ΔT — 30 — ppm/°C VDET RESET Delay tRPD — 180 — µs VDET = VTH to (VTH – 100 mV), See Figure 5-3 RESET Active Time-out Period tRPU 140 300 560 ms VDET = VTH - 100 mV to VTH + 100 mV, ISINK = 1.2 mA, See Figure 5-3. RESET Output Voltage Low VOL — — 0.2 V VDET = VTHmin, ISINK = 1.2 mA, ISINK = 100 µA for VDET < 1.8V, See Figure 5-3 RESET Output Voltage High VOH 0.9 VDET — — V VDET > VTHmax, ISOURCE = 500 µA, See Figure 5-3 Settling Time (From SHDN mode), (VOUT2) RESET Threshold Tempco Note 1: 2: 3: 4: 5: 6: 7: TA = -40°C to +125°C The minimum VIN has to meet two conditions: VIN ≥ 2.7V and VIN ≥ VR + VDROPOUT. VR is defined as the higher of the two regulator nominal output voltages (VOUT1 or VOUT2). TCVOUT = ((VOUTmax - VOUTmin) * 106)/(VOUT * ΔT). Regulation is measured at a constant junction temperature using low duty-cycle pulse testing. Load regulation is tested over a load range from 0.1 mA to the maximum specified output current. Changes in output voltage due to heating effects are covered by the thermal regulation specification. Thermal regulation is defined as the change in output voltage at a time t after a change in power dissipation is applied, excluding load or line regulation effects. Specifications are for a current pulse equal to ILMAX at VIN = 6V for t = 10 ms. Dropout voltage is defined as the input-to-output voltage differential at which the output voltage drops 2% below its value measured at a 1V differential. The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction temperature and the thermal resistance from junction-to-air (i.e., TA, TJ, θJA). Exceeding the maximum allowable power dissipation causes the device to initiate thermal shutdown. DS21798C-page 4 © 2008 Microchip Technology Inc. TC1301A/B TEMPERATURE SPECIFICATIONS Electrical Specifications: Unless otherwise indicated, all limits are specified for: VIN = +2.7V to +6.0V. Parameters Sym Min Typical Max Units Conditions Operating Junction Temperature Range TA -40 — +125 °C Storage Temperature Range TA -65 — +150 °C Maximum Junction Temperature TJ — — +150 °C Thermal Resistance, 8LD MSOP θJA — 208 — °C/W Typical 4-Layer Board Thermal Resistance, 8LD DFN θJA — 41 — °C/W Typical 4-Layer Board with Vias Temperature Ranges Steady State Transient Thermal Package Resistances © 2008 Microchip Technology Inc. DS21798C-page 5 TC1301A/B 2.0 TYPICAL PERFORMANCE CURVES Note: The graphs and tables provided following this note are a statistical summary based on a limited number of samples and are provided for informational purposes only. The performance characteristics listed herein are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified operating range (e.g., outside specified power supply range) and therefore outside the warranted range. Note: Unless otherwise indicated, VIN = VR +1V, IOUT1 = IOUT2 = 100 µA, CIN = 4.7 µF, COUT1 = COUT2 = 1 µF (X5R or X7R), CBYPASS = 0 pF, SHDN1 = SHDN2 > VIH. For the TC1301A, VDET = VOUT1, RESET = OPEN, TA = +25°C. 300 3.00 TJ = 25°C IOUT1 = IOUT2 = 0 µA VOUT1 Active TC1301B 250 Output Voltage (V) Quiescent Current (µA) 350 200 VOUT2 Active 150 VOUT2 SHDN 100 TJ = 25°C IOUT1 = 100 mA IOUT2 = 50 mA 2.90 VOUT1 2.80 2.70 VOUT2 50 0 2.60 2.7 2.7 3.0 3.3 3.6 3.9 4.2 4.5 4.8 5.1 5.4 5.7 6.0 3 3.3 3.6 3.9 4.2 4.5 4.8 5.1 5.4 5.7 Quiescent Current vs. Input FIGURE 2-4: Voltage. Output Voltage vs. Input 2.90 1.8 1.7 1.6 1.5 1.4 1.3 1.2 1.1 1.0 0.9 0.8 2.85 Output Voltage (V) SHDN Threshold (V) FIGURE 2-1: Voltage. ON OFF VOUT1 2.80 2.75 2.70 VOUT2 2.65 TJ = +25°C IOUT1 = 300 mA IOUT2 = 100 mA 2.60 2.55 2.50 2.7 3 3.3 3.6 3.9 4.2 4.5 4.8 5.1 5.4 5.7 2.7 6 3 3.3 3.6 3.9 4.2 4.5 4.8 5.1 5.4 5.7 140 130 120 110 100 90 80 70 60 50 40 TC1301B VOUT2 Active VIN = 4.2V IOUT1 = IOUT2 = 0 µA VOUT1 Active VOUT2 SHDN -40 -25 -10 5 20 35 50 65 80 95 110 125 FIGURE 2-5: Voltage. Dropout Voltage VOUT1 (mV) SHDN Voltage Threshold FIGURE 2-2: vs. Input Voltage. 140.0 Output Voltage vs. Input VR1 = 2.8V VR2 = 2.6V IOUT2 = 100 µA 120.0 100.0 DS21798C-page 6 TJ = +125°C TJ = +25°C 80.0 TJ = - 40°C 60.0 40.0 20.0 0.0 0 50 100 150 200 250 300 IOUT1 (mA) Junction Temperature (°C) FIGURE 2-3: Quiescent Current vs. Junction Temperature. 6 Input Voltage (V) Input Voltage (V) Quiescent Current (µA) 6 Input Voltage (V) Input Voltage (V) FIGURE 2-6: Current (VOUT1). Dropout Voltage vs. Output © 2008 Microchip Technology Inc. TC1301A/B 140 0.40 VR1 = 2.8V VR2 = 2.6V IOUT2 = 100 µA 120 IOUT1 = 300 mA Load Regulation (%) Dropout Voltage VOUT1 (mV) Note: Unless otherwise indicated, VIN = VR +1V, IOUT1 = IOUT2 = 100 µA, CIN = 4.7 µF, COUT1 = COUT2 = 1 µF (X5R or X7R), CBYPASS = 0 pF, SHDN1 = SHDN2 > VIH. For the TC1301A, VDET = VOUT1, RESET = OPEN, TA = +25°C. 100 80 60 IOUT1 = 100 mA 40 IOUT1 = 50 mA 20 VOUT2 0.30 VOUT1 0.10 IOUT1 = 0.1 mA to 300 mA 0.00 -0.10 VR1 = 2.8V VR2 = 2.6V VIN = 4.2 -0.20 -0.30 -0.40 0 -40 -25 -10 -40 -25 -10 5 35 50 65 80 95 110 125 FIGURE 2-10: VOUT1 and VOUT2 Load Regulation vs. Junction Temperature. VR1 = 2.8V VR2 = 2.6V IOUT1 = 100 µA Line Regulation (%/V) 0.045 180 160 140 120 100 80 60 20 Junction Temperature (125°C) FIGURE 2-7: Dropout Voltage vs. Junction Temperature (VOUT1). Dropout Voltage, VOUT2 (mv) 5 20 35 50 65 80 95 110 125 Junction Temperature (°C) TJ = +125°C TJ = +25°C TJ = - 40°C 40 20 0 VIN = 3.8V to 6.0V VR1 = 2.8V, IOUT1 = 100 µA VR2 = 2.6V, IOUT2 = 100 µA 0.040 0.035 VOUT2 0.030 0.025 0.020 VOUT1 0.015 0.010 0.005 0.000 0 30 60 90 120 150 -40 -25 -10 5 20 35 50 65 80 95 110 125 Junction Temperature (°C) IOUT2 (mA) FIGURE 2-8: Current (VOUT2). Dropout Voltage vs. Output FIGURE 2-11: VOUT1 and VOUT2 Line Regulation vs. Junction Temperature. 2.832 180 IOUT2 = 150 mA 160 140 VR1 = 2.8V VR2 = 2.6V IOUT1 = 100 µA 120 100 80 IOUT2 = 50 mA 60 40 IOUT2 = 10 mA 20 0 Output Voltage VOUT1 (V) Dropout Voltage VOUT2 (mV) IOUT2 = 0.1 mA to 150 mA 0.20 2.828 2.824 VIN = 4.2V VR1 = 2.8V VR2 = 2.6V, IOUT2 = 100 µA IOUT1 = 100 mA IOUT1 = 300 mA 2.820 2.816 IOUT1 = 100 µA 2.812 2.808 -40 -25 -10 5 20 35 50 65 80 95 110 125 -40 -25 -10 FIGURE 2-9: Dropout Voltage vs. Junction Temperature (VOUT2). © 2008 Microchip Technology Inc. 5 20 35 50 65 80 95 110 125 Junction Temperature (°C) Junction Temperature (°C) FIGURE 2-12: Temperature. VOUT1 vs. Junction DS21798C-page 7 TC1301A/B Note: Unless otherwise indicated, VIN = VR +1V, IOUT1 = IOUT2 = 100 µA, CIN = 4.7 µF, COUT1 = COUT2 = 1 µF (X5R or X7R), CBYPASS = 0 pF, SHDN1 = SHDN2 > VIH. For the TC1301A, VDET = VOUT1, RESET = OPEN, TA = +25°C. 2.848 30 VR1 = 2.8V, IOUT1 = 300 mA VR2 = 2.6V, IOUT2 = 100 µA VR1 = 2.8V VR2 = 2.6V 25 VIN = 3.0V 2.840 2.832 2.824 VIN = 4.2V 2.816 IVDET (µA) Output Voltage VOUT1 (V) 2.856 VDET = 4.2V 20 15 VDET = 3.0V 10 5 VIN = 6.0V 2.808 0 -40 -25 -10 5 20 35 50 65 80 95 110 125 -40 -25 -10 Junction Temperature (°C) FIGURE 2-13: Temperature. VOUT1 vs. Junction FIGURE 2-16: Temperature. 2.640 IOUT2 = 50 mA 2.635 2.630 IOUT2 = 150 mA 2.625 VIN = 4.2V VR1 = 2.8V, IOUT1 = 100 µA VR2 = 2.6V 2.620 RESET Active Time (ms) Output Voltage VOUT2 (V) 20 35 50 65 80 95 110 125 IDET current vs. Junction 400 IOUT2 = 100 µA 2.615 -40 -25 -10 5 VIN = 4.2V VR1 = 2.8V VR2 = 2.6V VDET = 2.63V 375 350 325 300 275 250 225 200 20 35 50 65 80 95 110 125 -40 -25 -10 Junction Temperature (°C) VOUT2 vs. Junction 2.644 VR1 = 2.8V, IOUT1 = 100 µA VR2 = 2.6V, IOUT2 = 150 mA 20 35 50 65 80 95 110 125 FIGURE 2-17: RESET Active Time vs. Junction Temperature. 2.6395 VIN = 3.0V 2.6390 VIN = 4.2V 2.636 5 Junction Temperature (°C) VIN = 6.0V 2.632 2.628 VDET Trip Point (V) FIGURE 2-14: Temperature. Output Voltage VOUT2 (V) 5 Junction Temperature (°C) 2.645 2.640 VDET = 6.0V 2.6385 2.6380 2.6375 2.6370 VIN = 4.2V VR1 = 2.8V VR2 = 2.6V VDET = 2.63V 2.6365 2.6360 2.624 2.6355 -40 -25 -10 5 20 35 50 65 80 95 110 125 -40 -25 -10 Junction Temperature (°C) FIGURE 2-15: Temperature. DS21798C-page 8 VOUT2 vs. Junction 5 20 35 50 65 80 95 110 125 Junction Temperature (°C) FIGURE 2-18: Temperature. VDET Trip Point vs. Junction © 2008 Microchip Technology Inc. TC1301A/B Note: Unless otherwise indicated, VIN = VR +1V, IOUT1 = IOUT2 = 100 µA, CIN = 4.7 µF, COUT1 = COUT2 = 1 µF (X5R or X7R), CBYPASS = 0 pF, SHDN1 = SHDN2 > VIH. For the TC1301A, VDET = VOUT1, RESET = OPEN, TA = +25°C. NOISE (μV/Hz) 10 1 0.1 0.01 VOUT2 VOUT1 VIN = 4.2V VR1 = 2.8V VR2=2.6V IOUT1 = 150 mA IOUT2 = 100 mA CBYPASS = 10 nF 0.001 0.01 0.1 1 10 100 1000 Frequency (KHz) FIGURE 2-19: Power Supply Rejection Ratio vs. Frequency (without bypass capacitor). FIGURE 2-22: VOUT1 and VOUT2 Noise vs. Frequency (with bypass capacitor). FIGURE 2-20: Power Supply Rejection Ratio vs. Frequency (with bypass capacitor). FIGURE 2-23: VOUT1 and VOUT2 Power-up from Shutdown TC1301B. 10 NOISE (μV/Hz) VOUT2 1 0.1 VOUT1 VIN = 4.2V VR1 = 2.8V VR2=2.6V IOUT1 = 150 mA IOUT2 = 100 mA CBYPASS = 0 nF 0.01 0.01 0.1 1 10 100 1000 Frequency (KHz) FIGURE 2-21: VOUT1 and VOUT2 Noise vs. Frequency (without bypass capacitor). © 2008 Microchip Technology Inc. FIGURE 2-24: VOUT2 Power-up from Shutdown Input TC1301A. DS21798C-page 9 TC1301A/B Note: Unless otherwise indicated, VIN = VR +1V, IOUT1 = IOUT2 = 100 µA, CIN = 4.7 µF, COUT1 = COUT2 = 1 µF (X5R or X7R), CBYPASS = 0 pF, SHDN1 = SHDN2 > VIH. For the TC1301A, VDET = VOUT1, RESET = OPEN, TA = +25°C. FIGURE 2-25: VOUT1 and VOUT2 Power-up from Input Voltage TC1301B. FIGURE 2-28: VOUT2. 150 mA Dynamic Load Step FIGURE 2-26: Dynamic Line Response. FIGURE 2-29: TC1301B. RESET Power-Up From VIN FIGURE 2-27: VOUT1. 300 mA Dynamic Load Step FIGURE 2-30: Down. TC1301A RESET Power- DS21798C-page 10 © 2008 Microchip Technology Inc. TC1301A/B Note: Unless otherwise indicated, VIN = VR +1V, IOUT1 = IOUT2 = 100 µA, CIN = 4.7 µF, COUT1 = COUT2 = 1 µF (X5R or X7R), CBYPASS = 0 pF, SHDN1 = SHDN2 > VIH. For the TC1301A, VDET = VOUT1, RESET = OPEN, TA = +25°C. RESET VOL (V) 0.30 VR1 = 2.8V,VR2 = 2.6V VDET = VTH - 20 mV IOL = 3.2 mA 0.25 0.20 0.15 IOL = 1.2 mA 0.10 0.05 0.00 -40 -25 -10 5 20 35 50 65 80 95 110 125 Junction Temperature (°C) FIGURE 2-31: RESET Output Voltage Low vs. Junction Temperature. © 2008 Microchip Technology Inc. RESET VOH (V) 0.35 4.4 4.2 4.0 3.8 3.6 3.4 3.2 3.0 2.8 2.6 2.4 2.2 2.0 VR1 = 2.8V,VR2 = 2.6V VDET = VTH + 20 mV VDET = 4.2V RESETISOURCE = 800 µA VDET = 3.0V RESETISOURCE = 500 µA -40 -25 -10 5 20 35 50 65 80 95 110 125 Junction Temperature (°C) FIGURE 2-32: RESET Output Voltage High vs. Junction Temperature. DS21798C-page 11 TC1301A/B 3.0 TC1301A PIN DESCRIPTIONS The descriptions of the pins are listed in Table 3-1. TABLE 3-1: TC1301A PIN FUNCTION TABLE Pin No. Name 1 RESET Push-pull output pin that will remain low while VDET is below the reset threshold and for 300 ms after VDET rises above the reset threshold. 2 VOUT1 Regulated output voltage #1 capable of 300 mA. 3 GND Circuit ground pin. 4 Bypass Internal reference bypass pin. A 10 nF external capacitor can be used to further reduce output noise and improve PSRR performance. 5 SHDN2 Output #2 shutdown control Input. 6 VOUT2 Regulated output voltage #2 capable of 150 mA. 7 VIN 8 VDET 3.1 Function Unregulated input voltage pin. Input pin for Voltage Detector (VDET). RESET Output Pin The push-pull output pin is used to monitor the voltage on the VDET pin. If the VDET voltage is less than the threshold voltage, the RESET output will be held in the low state. As the VDET pin rises above the threshold, the RESET output will remain in the low state for 300 ms and then change to the high state, indicating that the voltage on the VDET pin is above the threshold. 3.2 Regulated Output Voltage #1 (VOUT1) Connect VOUT1 to the positive side of the VOUT1 capacitor and load. It is capable of 300 mA maximum output current. VOUT1 output is available when VIN is available; there is no pin to turn it OFF. See TC1301B if ON/OFF control of VOUT1 is desired. 3.3 Circuit Ground Pin (GND) 3.5 Output Voltage #2 Shutdown (SHDN2) ON/OFF control is performed by connecting SHDN2 to its proper level. When the input of this pin is connected to a voltage less than 15% of VIN, VOUT2 will be OFF. If this pin is connected to a voltage that is greater than 45% of VIN, VOUT2 will be turned ON. 3.6 Regulated Output Voltage #2 (VOUT2) Connect VOUT2 to the positive side of the VOUT2 capacitor and load. This pin is capable of a maximum output current of 150 mA. VOUT2 can be turned ON and OFF using SHDN2. 3.7 Unregulated Input Voltage Pin (VIN) Connect GND to the negative side of the input and output capacitor. Only the LDO internal circuitry bias current flows out of this pin (200 µA maximum). Connect the unregulated input voltage source to VIN. If the input voltage source is located more than several inches away, or is a battery, a typical input capacitance of 1 µF to 4.7 µF is recommended. 3.4 3.8 Reference Bypass Input By connecting an external 10 nF capacitor (typical) to the bypass input, both outputs (VOUT1 and VOUT2) will have less noise and improved Power Supply Ripple Rejection (PSRR) performance. The LDO output voltage start-up time will increase with the addition of an external bypass capacitor. By leaving this pin unconnected, the start-up time will be minimized. DS21798C-page 12 Input Pin for Voltage Detector (VDET) The voltage on the input of VDET is compared with the preset VDET threshold voltage. If the voltage is below the threshold, the RESET output will be low. If the voltage is above the VDET threshold, the RESET output will be high after the RESET time period. The IDET supply current is typically 9 µA at room temperature, with VDET = 3.8V. © 2008 Microchip Technology Inc. TC1301A/B 4.0 TC1301B PIN DESCRIPTIONS The descriptions of the pins are listed in Table 4-1. TABLE 4-1: TC1301B PIN FUNCTION TABLE Pin No. Name 1 RESET Push-pull output pin that will remain low while VDET is below the reset threshold and for 300 ms after VOUT1 rises above the reset threshold 2 VOUT1 Regulated output voltage #1 capable of 300 mA 3 GND Circuit ground pin 4 Bypass Internal reference bypass pin. A 10 nF external capacitor can be used to further reduce output noise and improve PSRR performance 5 SHDN2 Output #2 shutdown control Input 6 VOUT2 Regulated output voltage #2 capable of 150 mA 7 VIN 8 SHDN1 4.1 Function Unregulated input voltage pin Output #1 shutdown control input RESET Output Pin The push-pull output pin is used to monitor the output voltage (VOUT1). If VOUT1 is less than the threshold voltage, the RESET output will be held in the low state. As VOUT1 rises above the threshold, the RESET output will remain in the low state for 300 ms and then change to the high state, indicating that the voltage on VOUT1 is above the threshold. 4.2 Regulated Output Voltage #1 (VOUT1) Connect VOUT1 to the positive side of the VOUT1 capacitor and load. It is capable of 300 mA maximum output current. For the TC1301B, VOUT1 can be turned ON and OFF using the SHDN1 input pin. 4.3 Circuit Ground Pin (GND) Connect GND to the negative side of the input and output capacitor. Only the LDO internal circuitry bias current flows out of this pin (200 µA maximum). 4.4 Reference Bypass Input By connecting an external 10 nF capacitor (typical) to bypass, both outputs (VOUT1 and VOUT2) will have less noise and improved Power Supply Ripple Rejection (PSRR) performance. The LDO output voltage start-up time will increase with the addition of an external bypass capacitor. By leaving this pin unconnected, the start-up time will be minimized. © 2008 Microchip Technology Inc. 4.5 Output Voltage #2 Shutdown (SHDN2) ON/OFF control is performed by connecting SHDN2 to its proper level. When this pin is connected to a voltage less than 15% of VIN, VOUT2 will be OFF. If this pin is connected to a voltage that is greater than 45% of VIN, VOUT2 will be turned ON. 4.6 Regulated Output Voltage #2 (VOUT2) Connect VOUT2 to the positive side of the VOUT2 capacitor and load. This pin is capable of a maximum output current of 150 mA. VOUT2 can be turned ON and OFF using SHDN2. 4.7 Unregulated Input Voltage Pin (VIN) Connect the unregulated input voltage source to VIN. If the input voltage source is located more than several inches away or is a battery, a typical minimum input capacitance of 1 µF and 4.7 µF is recommended. 4.8 Output Voltage #1 Shutdown (SHDN1) ON/OFF control is performed by connecting SHDN1 to its proper level. When this pin is connected to a voltage less than 15% of VIN, VOUT1 will be OFF. If this pin is connected to a voltage that is greater than 45% of VIN, VOUT1 will be turned ON. DS21798C-page 13 TC1301A/B 5.0 DETAILED DESCRIPTION 5.1 Device Overview The TC1301A/B is a combination device consisting of one 300 mA LDO regulator with a fixed output voltage, VOUT1 (1.5V – 3.3V), one 150 mA LDO regulator with a fixed output voltage, VOUT2 (1.5V – 3.3V), and a microcontroller voltage monitor/RESET (2.2V to 3.2V). For the TC1301A, the 300 mA output (VOUT1) is always present, independent of the level of SHDN2. The 150 mA output (VOUT2) can be turned on/off by controlling the level of SHDN2. For the TC1301B, VOUT1 and VOUT2 each have independent shutdown input pins (SHDN1 and SHDN2) to control their respective outputs. In the case of the TC1301B, the voltage detect input of the microcontroller RESET function is internally connected to the VOUT1 output of the device. 5.2 LDO Output #1 LDO output #1 is rated for 300 mA of output current. The typical dropout voltage for VOUT1 = 104 mV @ 300 mA. A 1 µF (minimum) output capacitor is needed for stability and should be located as close to the VOUT1 pin and ground as possible. 5.3 LDO Output #2 LDO output #2 is rated for 150 mA of output current. The typical dropout voltage for VOUT2 = 150 mV. A 1 µF (minimum) capacitor is needed for stability and should be located as close to the VOUT2 pin and ground as possible. 5.4 RESET Output the LDO as is practical. Larger input capacitors will help reduce the input impedance and further reduce any high-frequency noise on the input and output of the LDO. 5.6 Output Capacitor A minimum output capacitance of 1 µF for each of the TC1301A/B LDO outputs is necessary for stability. Ceramic capacitors are recommended because of their size, cost and environmental robustness qualities. Electrolytic (Tantalum or Aluminum) capacitors can be used on the LDO outputs as well. The Equivalent Series Resistance (ESR) requirements on the electrolytic output capacitors are between 0 and 2 ohms. The output capacitor should be located as close to the LDO output as is practical. Ceramic materials, X7R and X5R, have low temperature coefficients and are well within the acceptable ESR range required. A typical 1 uF X5R 0805 capacitor has an ESR of 50 milliohms. Larger LDO output capacitors can be used with the TC1301A/B to improve dynamic performance and power supply ripple rejection performance. A maximum of 10 µF is recommended. Aluminum electrolytic capacitors are not recommended for low temperature applications of < -25°C. 5.7 Bypass Input The bypass pin is connected to the internal LDO reference. By adding capacitance to this pin, the LDO ripple rejection, input voltage transient response and output noise performance are all increased. A typical bypass capacitor between 470 pF to 10 nF is recommended. Larger bypass capacitors can be used, but results in a longer time-period for the LDO outputs to reach their rated output voltage when started from SHDN or VIN. The RESET output is used to detect whether the level on the input of VDET (TC1301A) or VOUT1 (TC1301B) is above or below a preset threshold. If the voltage detected is below the preset threshold, the RESET output is capable of sinking 1.2 mA (VRESET < 0.2V maximum). Once the voltage being monitored is above the preset threshold, the RESET output pin will transition from a logic-low to a logic-high after a 300 ms delay. The RESET output is a push-pull configuration and will actively pull the RESET output up to VDET when not in RESET. 5.8 5.5 The TC1301A SHDN2 pin is used to turn VOUT2 ON and OFF. A logic-high level on SHDN2 will enable the VOUT2 output, while a logic-low on the SHDN2 pin will disable the VOUT2 output. For the TC1301A, VOUT1 is not affected by SHDN2 and will be enabled as long as the input voltage is present. Input Capacitor Low input source impedance is necessary for the two LDO outputs to operate properly. When operating from batteries or in applications with long lead length (> 10 inches) between the input source and the LDO, some input capacitance is recommended. A minimum of 1.0 µF to 4.7 µF is recommended for most applications. When using large capacitors on the LDO outputs, larger capacitance is recommended on the LDO input. The capacitor should be placed as close to the input of DS21798C-page 14 GND For the optimal noise and PSRR performance, the GND pin of the TC1301A/B should be tied to a quiet circuit ground. For applications that have switching or noisy inputs, tie the GND pin to the return of the output capacitor. Ground planes help lower inductance and voltage spikes caused by fast transient load currents and are recommended for applications that are subjected to fast load transients. 5.9 SHDN1/SHDN2 Operation The TC1301B SHDN1 and SHDN2 pins are used to turn VOUT1 and VOUT2 ON and OFF. They operate independent of each other. © 2008 Microchip Technology Inc. TC1301A/B 5.10 TC1301A SHDN2 Timing VOUT1 will rise independent of the level of SHDN2 for the TC1301A. Figure 5-1 is used to define the wake-up time from shutdown (tWK) and the settling time (tS). The wake-up time is dependant upon the frequency of operation. The faster the SHDN pin is pulsed, the shorter the wake-up time will be. VIN ts twk SHDN2 VOUT1 VDET and RESET Operation The TC1301A/B integrates an independent voltage reset monitor that can be used for low-battery input voltage detection or a microprocessor Power-On Reset (POR) function. The input voltage for the detector is different for the TC1301A than it is for the TC1301B. For the TC1301A, the input voltage to the detector is pin 8 (VDET). For the TC1301B, the input voltage to the detector is internally connected to the output of LDO #1 (VOUT1). The detected voltage is sensed and compared to an internal threshold. When the voltage on the VDET pin is below the threshold voltage, the RESET output pin is low. When the voltage on the VDET pin rises above the voltage threshold, the RESET output will remain low for typically 300 ms (RESET time-out period). After the RESET time-out period, the RESET output voltage will transition from the low output state to the high output state if the detected voltage pin remains above the threshold voltage. The RESET output will be driven low within 180 µs of VDET going below the RESET voltage threshold. The RESET output will remain valid for detected voltages greater than 1.2V overtemperature. VOUT2 5.13 FIGURE 5-1: 5.11 5.12 TC1301A Timing. TC1301B SHDN1 / SHDN2 Timing TC1301A RESET Timing Figure 5-3 shows the RESET timing waveforms for the TC1301A. This diagram is also used to define the RESET active time-out period (tRPU) and the VDET RESET delay time (tRPD). For the TC1301B, the SHDN1 input pin is used to control VOUT1. The SHDN2 input pin is used to control VOUT2, independent of the logic input on SHDN1. VTH VDET RESET Time VIN VOH ts TRPD twk RESET SHDN1 1V VOL VOUT1 FIGURE 5-3: TC1301A RESET Timing. SHDN2 VOUT2 FIGURE 5-2: TC1301B Timing. © 2008 Microchip Technology Inc. DS21798C-page 15 TC1301A/B 5.14 TC1301B RESET Timing 5.15 The timing waveforms for the TC1301B RESET output are shown in Figure 5-4. Note that the RESET threshold input for the TC1301B is VOUT1. The VOUT1 to RESET threshold detector connection is made internal in the case of the TC1301B. VIN VTH 5.15.1 RESET Time VOH TRPD RESET 1V FIGURE 5-4: DS21798C-page 16 VOL TC1301B RESET Timing. OVERCURRENT LIMIT In the event of a faulted output load, the maximum current the LDO output will permit to flow is limited internally for each of the TC1301A/B outputs. The peak current limit for VOUT1 is typically 1.1A, while the peak current limit for VOUT2 is typically 0.5A. During shortcircuit operation, the average current is limited to 200 mA for VOUT1 and 140 mA for VOUT2.The VDET and RESET circuit will continue to operate in the event of an overcurrent on either output for the TC1301A. The voltage detect and RESET circuit will continue to operate in the event of an overcurrent on VOUT1 (or VOUT2) for the TC1301B. In the event of an overcurrent on VOUT1, the RESET will detect the absence of VOUT1. 5.15.2 VOUT1 Device Protection OVERTEMPERATURE PROTECTION If the internal power dissipation within the TC1301A/B is excessive due to a faulted load or higher-thanspecified line voltage, an internal temperature-sensing element will prevent the junction temperature from exceeding approximately 150°C. If the junction temperature does reach 150°C, both outputs will be disabled until the junction temperature cools to approximately 140°C. The device will resume normal operation. If the internal power dissipation continues to be excessive, the device will again shut off. The VDET and RESET circuit will continue to operate normally during an overtemperature fault condition for both the TC1301A and TC1301B. © 2008 Microchip Technology Inc. TC1301A/B 6.0 6.1 APPLICATION CIRCUITS/ ISSUES EQUATION 6-1: P LDO = ( V IN ( MAX ) ) – V OUT ( MIN ) ) × I OUT ( MAX ) ) Where: Typical Application The TC1301A/B is used for applications that require the integration of two LDO’s and a microcontroller RESET. TC1301A System RESET 2.8V @ 300 mA COUT1 1 µF Ceramic X5R 1 2 3 4 RESET VOUT1 GND VDET 8 BATTERY VIN 7 VOUT2 Bypass SHDN2 1.8V 6 @ 150 mA CIN 1 µF 5 COUT2 1 µF Ceramic X5R Cbypass 10 nF Ceramic 2.7V to 4.2V ON/OFF Control VOUT2 PLDO = LDO Pass device internal power dissipation VIN(MAX) = Maximum input voltage VOUT(MIN) = LDO minimum output voltage In addition to the LDO pass element power dissipation, there is power dissipation within the TC1301A/B as a result of quiescent or ground current. The power dissipation as a result of the ground current can be calculated using the following equation. The VIN pin quiescent current and the VDET pin current are both considered. The VIN current is a result of LDO quiescent current, while the VDET current is a result of the voltage detector current. EQUATION 6-2: P I ( GND ) = V IN ( MAX ) × ( I VIN + I VDET ) ON/OFF Control VOUT1 TC1301B 1 System RESET RESET SHDN1 2.8V @ 300 mA 2 VIN VOUT1 COUT1 3 VOUT2 GND 1 µF Ceramic X5R 4 Bypass SHDN2 Where: 8 BATTERY 7 1.8V 6 @ 150 mA 5 CIN 1 µF COUT2 1 µF Ceramic X5R 2.7V to 4.2V ON/OFF Control VOUT2 FIGURE 6-1: TC1301A/B. 6.1.1 Typical Application Circuit APPLICATION INPUT CONDITIONS Package Type = 3x3 DFN8 Input Voltage Range = 2.7V to 4.2V VIN maximum = 4.2V VIN typical = 3.6V VOUT1 = 300 mA maximum VOUT2 = 150 mA maximum System RESET Load = 10 kΩ 6.2 6.2.1 Power Calculations POWER DISSIPATION PI(GND) = Total current in ground pin VIN(MAX) = Maximum input voltage IVIN = Current flowing in the VIN pin with no output current on either LDO output IVDET = Current in the VDET pin with RESET loaded The total power dissipated within the TC1301A/B is the sum of the power dissipated in both of the LDO’s and the P(IGND) term. Because of the CMOS construction, the typical IGND for the TC1301A/B is 116 µA. Operating at a maximum of 4.2V results in a power dissipation of 0.5 milliWatts. For most applications, this is small compared to the LDO pass device power dissipation and can be neglected. The maximum continuous operating junction temperature specified for the TC1301A/B is 125°C. To estimate the internal junction temperature of the TC1301A/B, the total internal power dissipation is multiplied by the thermal resistance from junction to ambient (RθJA) of the device. The thermal resistance from junction to ambient for the 3x3 DFN8 pin package is estimated at 41°C/W. The internal power dissipation within the TC1301A/B is a function of input voltage, output voltage, output current and quiescent current. The following equation can be used to calculate the internal power dissipation for each LDO. © 2008 Microchip Technology Inc. DS21798C-page 17 TC1301A/B 6.3 EQUATION 6-3: T J ( MAX ) = P TOTAL × Rθ JA + T AMAX Where: TJ(MAX) = Maximum continuous junction temperature PTOTAL = Total device power dissipation RθJA = Thermal resistance from junctionto-ambient TAMAX = Maximum ambient temperature The maximum power dissipation capability for a package can be calculated given the junction to ambient thermal resistance and the maximum ambient temperature for the application. The following equation can be used to determine the package maximum internal power dissipation. EQUATION 6-4: ( T J ( MAX ) – T A ( MAX ) ) P D ( MAX ) = --------------------------------------------------Rθ JA Where: PD(MAX) = Maximum device power dissipation TJ(MAX) = Maximum continuous junction temperature TAMAX = Maximum ambient temperature RθJA = Thermal resistance from junctionto-ambient EQUATION 6-5: T J ( RISE ) = P D ( MAX ) × Rθ JA Where: TJ(RISE) = Rise in device junction temperature over the ambient temperature PD(MAX) = Maximum device power dissipation RθJA = Thermal resistance from junctionto-ambient EQUATION 6-6: T J = T J ( RISE ) + T A Where: TJ = Junction Temperature TJ(RISE) = Rise in device junction temperature over the ambient temperature TA = DS21798C-page 18 Ambient Temperature Typical Application Internal power dissipation, junction temperature rise, junction temperature, and maximum power dissipation are calculated in the following example. The power dissipation as a result of ground current is small enough to be neglected. 6.3.1 POWER DISSIPATION EXAMPLE Package Package Type = 3x3 DFN8 Input Voltage VIN = 2.7V to 4.2V LDO Output Voltages and Currents VOUT1 = 2.8V IOUT1 = 300 mA VOUT2 = 1.8V IOUT2 = 150 mA Maximum Ambient Temperature TA(MAX) = 50°C Internal Power Dissipation Internal power dissipation is the sum of the power dissipation for each LDO pass device. PLDO1(MAX) = (VIN(MAX) - VOUT1(MIN)) x IOUT1(MAX) PLDO1 = (4.2V - (0.975 x 2.8V)) x 300 mA PLDO1 = 441.0 milliWatts PLDO2 = (4.2V - (0.975 X 1.8V)) x 150 mA PLDO2 = 366.8 milliWatts PTOTAL = PLDO1 + PLDO2 PTOTAL= 807.8 milliWatts Device Junction Temperature Rise The internal junction temperature rise is a function of internal power dissipation and the thermal resistance from junction to ambient for the application. The thermal resistance from junction to ambient (RθJA) is derived from an EIA/JEDEC standard for measuring thermal resistance for small surface-mount packages. The EIA/JEDEC specification is JESD51-7, “High Effective Thermal Conductivity Test Board for Leaded Surface Mount Packages”. The standard describes the test method and board specifications for measuring the thermal resistance from junction to ambient. The actual thermal resistance for a particular application can vary depending on many factors such as copper area and thickness. Refer to AN792, “A Method To Determine How Much Power a SOT-23 Can Dissipate in Your Application” (DS00792), for more information regarding this subject. TJ(RISE) = PTOTAL x RqJA TJRISE = 807.8 milliWatts x 41.0° C/W TJRISE = 33.1°C © 2008 Microchip Technology Inc. TC1301A/B Junction Temperature Estimate To estimate the internal junction temperature, the calculated temperature rise is added to the ambient or offset temperature. For this example, the worst-case junction temperature is estimated below: TJ = TJRISE + TA(MAX) TJ = 83.1°C Maximum Package Power Dissipation at 50°C Ambient Temperature 3X3DFN8 (41° C/W RθJA) PD(MAX) = (125°C - 50°C) / 41° C/W PD(MAX) = 1.83 Watts MSOP8 (208° C/W RθJA) PD(MAX) = (125°C - 50°C) / 208° C/W PD(MAX) = 0.360 Watts 7.0 FIGURE 7-3: Example. 3x3 DFN Silk-Screen 8-lead 3X3 DFN physical layout example with bypass capacitor. TYPICAL LAYOUT TC1301A FIGURE 7-4: Example. FIGURE 7-1: MSOP8 Silk Screen Layer. When doing the physical layout for the TC1301A/B, the highest priority is placing the input and output capacitors as close to the device pins as is practical. Figure 7-1 above represents a typical placement of the components when using SMT0805 capacitors. 3x3 DFN Top Metal Layer Vias represent the connection to a ground plane that is below the wiring layer. 8.0 ADDITIONAL OUTPUT VOLTAGE AND THRESHOLD VOLTAGE OPTIONS 8.1 Output Voltage and Threshold Voltage Range Table 8-1 describes the range of output voltage options available for the TC1301A/B. VOUT1 and VOUT2 can be factory preset from 1.5V to 3.3V in 100 mV increments. The VDET (TC1301A) or threshold voltage (TC1301B) can be preset from 2.2V to 3.2V in 10 mV increments. TABLE 8-1: FIGURE 7-2: MSOP8 Wiring Layer. A wiring example for the TC1301A is shown. The vias represent the connection to a ground plane that is below the wiring layer. © 2008 Microchip Technology Inc. CUSTOM OUTPUT VOLTAGE AND THRESHOLD VOLTAGE RANGES VOUT1 VOUT2 VDET Threshold 1.5V to 3.3V 1.5V to 3.3V 2.2V to 3.2V For a listing of TC1301A/B standard parts, refer to the Product Identification System on page 25. DS21798C-page 19 TC1301A/B 9.0 PACKAGING INFORMATION 9.1 Package Marking Information 8-Lead MSOP Example: XXXXXX YWWNNN 31AFHA 435256 — 31A = TC1301A — F = 2.8V VOUT1 — H = 2.6V VOUT2 — A = 2.63V Reset X1 represents VOUT1 configuration: Code VOUT1 A B C D E F 8-Lead DFN Example: XXXX YYWW NNN AFHA 0435 256 Xr represents the reset voltage range: Code VOUT1 Code VOUT1 Code Voltage 3.3V J 2.4V 3.2V K 2.3V 3.1V L 3.0V M 2.9V 2.8V Code Voltage S 1.5V A T 1.65V B 2.63V J — 2.2V K — 2.2V U 2.85V C 2.1V V 2.65V D 2.32V L — 2.5V M — N 2.0V W 1.85V E O 1.9V X — F 2.4V N — 2.6V O — G 2.7V P 1.8V Y — G — P — H 2.6V Q 1.7V Z — H — Q — I 2.5V R 1.6V I — R — X2 represents VOUT2 configuration: Code VOUT2 Code VOUT2 Code VOUT2 A 3.3V J 2.4V S 1.5V B 3.2V K 2.3V T 1.65V C 3.1V L 2.2V U 2.85V D 3.0V M 2.1V V 2.65V E 2.9V N 2.0V W 1.85V F 2.8V O 1.9V X — G 2.7V P 1.8V Y — H 2.6V Q 1.7V Z — I 2.5V R 1.6V Legend: XX...X Y YY WW NNN e3 * Note: DS21798C-page 20 For a listing of TC1301A/B standard parts, refer to the Product Identification System section on page 25. Customer-specific information Year code (last digit of calendar year) Year code (last 2 digits of calendar year) Week code (week of January 1 is week ‘01’) Alphanumeric traceability code Pb-free JEDEC designator for Matte Tin (Sn) This package is Pb-free. The Pb-free JEDEC designator ( e3 ) can be found on the outer packaging for this package. In the event the full Microchip part number cannot be marked on one line, it will be carried over to the next line, thus limiting the number of available characters for customer-specific information. © 2008 Microchip Technology Inc. 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DS21798C-page 21 TC1301A/B " # $#%&'&'*+,-3"# ! )RUWKHPRVWFXUUHQWSDFNDJHGUDZLQJVSOHDVHVHHWKH0LFURFKLS3DFNDJLQJ6SHFLILFDWLRQORFDWHGDW KWWSZZZPLFURFKLSFRPSDFNDJLQJ D e b N N L EXPOSED PAD E2 E K NOTE 1 1 2 D2 2 NOTE 1 1 BOTTOM VIEW TOP VIEW A NOTE 2 A3 A1 8QLWV 'LPHQVLRQ/LPLWV 1XPEHURI3LQV 0,//,0(7(56 0,1 1 120 0$; 3LWFK H 2YHUDOO+HLJKW $ %6& 6WDQGRII $ &RQWDFW7KLFNQHVV $ 5() 2YHUDOO/HQJWK ' ([SRVHG3DG:LGWK ( 2YHUDOO:LGWK ( ([SRVHG3DG/HQJWK ' ± E &RQWDFW/HQJWK / &RQWDFWWR([SRVHG3DG . ± ± &RQWDFW:LGWK %6& ± %6& ! 3LQYLVXDOLQGH[IHDWXUHPD\YDU\EXWPXVWEHORFDWHGZLWKLQWKHKDWFKHGDUHD 3DFNDJHPD\KDYHRQHRUPRUHH[SRVHGWLHEDUVDWHQGV 3DFNDJHLVVDZVLQJXODWHG 'LPHQVLRQLQJDQGWROHUDQFLQJSHU$60(<0 %6& %DVLF'LPHQVLRQ7KHRUHWLFDOO\H[DFWYDOXHVKRZQZLWKRXWWROHUDQFHV 5() 5HIHUHQFH'LPHQVLRQXVXDOO\ZLWKRXWWROHUDQFHIRULQIRUPDWLRQSXUSRVHVRQO\ 0LFURFKLS 7HFKQRORJ\ 'UDZLQJ &% DS21798C-page 22 © 2008 Microchip Technology Inc. TC1301A/B APPENDIX A: REVISION HISTORY Revision C (February 2008) The following is the list of modifications. 1. Updated Section 9.0 “Packaging Information”. Revision B (January 2005) The following is the list of modifications. 1. 2. Corrected the incorrect part number options shown on the Product Identification System page and changed the “standard” output voltage and reset voltage combinations. Added Appendix A: Revision History. Revision A (September 2003) • Original data sheet release. © 2008 Microchip Technology Inc. DS21798C-page 23 TC1301A/B NOTES: DS21798C-page 24 © 2008 Microchip Technology Inc. TC1301A/B PRODUCT IDENTIFICATION SYSTEM To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office. PART NO. TC1301 X- X X X XX XX Package Tube or Tape & Reel X Type VOUT1 VOUT2 Reset Temp Voltage Range A/B Standard Configurations Device: TC1301A: Dual LDO with microcontroller RESET function and single shutdown input. TC1301B: Dual LDO with microcontroller RESET function and dual shutdown inputs. Standard Configurations: * TC1301A TC1301B VOUT1/VOUT2/Reset Configuration Code 3.3 / 3.0 / 2.63 3.3 / 1.8 / 2.63 3.0 / 2.8 / 2.63 3.0 / 1.8 / 2.63 2.8 / 3.0 / 2.63 2.8 / 2.6 / 2.63 1.8 / 2.8 / 2.32 1.5 / 2.8 / 2.32 2.85 / 1.85 / 2.63 ADA APA DFA DPA FDA FHA PFC SFC UWA 3.3 / 3.0 / 2.63 3.3 / 1.8 / 2.63 3.0 / 2.8 / 2.63 3.0 / 1.8 / 2.63 2.8 / 3.0 / 2.63 2.8 / 2.6 / 2.63 2.7 / 2.8 / 2.5 2.7 / 3.0 / 2.50 2.85 / 1.85 / 2.63 ADA APA DFA DPA FDA FHA GFD GDD UWA * Contact Factory for Alternate Output Voltage and Reset Voltage Configurations. Temperature Range: V Examples: a) TC1301A-ADAVUA: b) TC1301A-APAVMFTR: c) TC1301A-DFAVUATR: d) TC1301A-DPAVMF: e) TC1301A-FDAVMF: f) TC1301A-FHAVMF: g) TC1301A-PFCVUA: h) TC1301A-SFCVMFTR: i) TC1301A-UWAVUATR: a) TC1301B-ADAVMF: b) TC1301B-APAVMFTR: c) TC1301B-DFAVUA: d) TC1301B-DPAVUATR: e) TC1301B-FDAVMF: f) TC1301B-FHAVMFTR: g) TC1301B-GDDVUA: h) TC1301B-GFDVMF: i) TC1301B-UWAVUATR: = -40°C to +125°C Package: MF UA = Dual Flat, No Lead (3x3 mm body), 8-lead = Plastic Micro Small Outline (MSOP), 8-lead Tube or Tape and Reel: Blank TR = Tube = Tape and Reel © 2008 Microchip Technology Inc. 3.3, 3.0, 2.63, MSOP pkg. 3.3 , 1.8, 2.63, 8LD DFN pkg. Tape and Reel 3.0, 2.8 , 2.63, MSOP pkg. Tape and Reel 3.0, 1.8 , 2.63, 8LD DFN pkg. 2.8, 3.0, 2.63, 8LD DFN pkg. 2.8, 2.6, 2.63, DFN pkg. 1.8, 2.8, 2.32, MSOP pkg. 1.5, 2.8, 2.32, DFN pkg. Tape and Reel 2.85, 1.85, 2.63, MSOP pkg. Tape and Reel 3.3, 3.0, 2.63, 8LD DFN pkg. 3.3, 1.8, 2.63, 8LD DFN pkg. Tape and Reel 3.0, 2.8, 2.63, MSOP pkg. 3.0, 1.8 ,2.63, MSOP pkg. Tape and Reel 2.8 ,3.0, 2.63, 8LD DFN pkg. 2.8, 2.6 ,2.63, 8LD DFN pkg. Tape and Reel 2.7, 3.0, 2.50, MSOP pkg. 2.7, 2.8, 2.5, 8LD DFN pkg. 2.85, 1.85, 2.63, MSOP pkg. Tape and Reel 21798C-page 25 TC1301A/B NOTES: 21798C-page 26 © 2008 Microchip Technology Inc. Note the following details of the code protection feature on Microchip devices: • Microchip products meet the specification contained in their particular Microchip Data Sheet. • Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the intended manner and under normal conditions. • There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip’s Data Sheets. Most likely, the person doing so is engaged in theft of intellectual property. • Microchip is willing to work with the customer who is concerned about the integrity of their code. • Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not mean that we are guaranteeing the product as “unbreakable.” Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our products. Attempts to break Microchip’s code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act. Information contained in this publication regarding device applications and the like is provided only for your convenience and may be superseded by updates. It is your responsibility to ensure that your application meets with your specifications. MICROCHIP MAKES NO REPRESENTATIONS OR WARRANTIES OF ANY KIND WHETHER EXPRESS OR IMPLIED, WRITTEN OR ORAL, STATUTORY OR OTHERWISE, RELATED TO THE INFORMATION, INCLUDING BUT NOT LIMITED TO ITS CONDITION, QUALITY, PERFORMANCE, MERCHANTABILITY OR FITNESS FOR PURPOSE. Microchip disclaims all liability arising from this information and its use. Use of Microchip devices in life support and/or safety applications is entirely at the buyer’s risk, and the buyer agrees to defend, indemnify and hold harmless Microchip from any and all damages, claims, suits, or expenses resulting from such use. No licenses are conveyed, implicitly or otherwise, under any Microchip intellectual property rights. Trademarks The Microchip name and logo, the Microchip logo, Accuron, dsPIC, KEELOQ, KEELOQ logo, MPLAB, PIC, PICmicro, PICSTART, PRO MATE, rfPIC and SmartShunt are registered trademarks of Microchip Technology Incorporated in the U.S.A. and other countries. FilterLab, Linear Active Thermistor, MXDEV, MXLAB, SEEVAL, SmartSensor and The Embedded Control Solutions Company are registered trademarks of Microchip Technology Incorporated in the U.S.A. Analog-for-the-Digital Age, Application Maestro, CodeGuard, dsPICDEM, dsPICDEM.net, dsPICworks, dsSPEAK, ECAN, ECONOMONITOR, FanSense, In-Circuit Serial Programming, ICSP, ICEPIC, Mindi, MiWi, MPASM, MPLAB Certified logo, MPLIB, MPLINK, mTouch, PICkit, PICDEM, PICDEM.net, PICtail, PIC32 logo, PowerCal, PowerInfo, PowerMate, PowerTool, REAL ICE, rfLAB, Select Mode, Total Endurance, UNI/O, WiperLock and ZENA are trademarks of Microchip Technology Incorporated in the U.S.A. and other countries. SQTP is a service mark of Microchip Technology Incorporated in the U.S.A. All other trademarks mentioned herein are property of their respective companies. © 2008, Microchip Technology Incorporated, Printed in the U.S.A., All Rights Reserved. Printed on recycled paper. Microchip received ISO/TS-16949:2002 certification for its worldwide headquarters, design and wafer fabrication facilities in Chandler and Tempe, Arizona; Gresham, Oregon and design centers in California and India. The Company’s quality system processes and procedures are for its PIC® MCUs and dsPIC® DSCs, KEELOQ® code hopping devices, Serial EEPROMs, microperipherals, nonvolatile memory and analog products. In addition, Microchip’s quality system for the design and manufacture of development systems is ISO 9001:2000 certified. © 2008 Microchip Technology Inc. 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