UESD3.3DT5G D

mESD3.3DT5G SERIES
ESD Protection Diodes
In Ultra Small SOT−723 Package
The mESD Series is designed to protect voltage sensitive components
from ESD. Excellent clamping capability, low leakage, and fast response
time, make these parts ideal for ESD protection on designs where board
space is at a premium. Because of its small size, it is suited for use in
cellular phones, portable devices, digital cameras, power supplies and
many other portable applications.
Specification Features:
• Small Body Outline Dimensions:
•
•
•
•
•
•
•
•
•
0.047″ x 0.032″ (1.20 mm x 0.80 mm)
Low Body Height: 0.020″ (0.5 mm)
Stand−off Voltage: 3.3 V − 6.0 V
Low Leakage
Response Time is Typically < 1 ns
ESD Rating of Class 3 (> 16 kV) per Human Body Model
IEC61000−4−2 Level 4 ESD Protection
IEC61000−4−4 Level 4 EFT Protection
AEC−Q101 Qualified and PPAP Capable
These are Pb−Free Devices
http://onsemi.com
PIN 1. CATHODE
2. CATHODE
3. ANODE
1
3
2
MARKING
DIAGRAM
3
1
2
SOT−723
CASE 631AA
STYLE 4
Mechanical Characteristics:
CASE: Void-free, transfer-molded, thermosetting plastic
xx M
xx
M
= Device Code
= Date Code
ORDERING INFORMATION
Epoxy Meets UL 94 V−0
LEAD FINISH: 100% Matte Sn (Tin)
MOUNTING POSITION: Any
Device
Package
Shipping†
SOT−723
8000/Tape & Reel
QUALIFIED MAX REFLOW TEMPERATURE: 260°C
UESDxxDT5G
Device Meets MSL 1 Requirements
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
MAXIMUM RATINGS
Rating
Value
Unit
±30
±30
kV
IEC 61000−4−4 (EFT)
40
A
ESD Voltage
16
400
kV
V
240
1.9
525
mW
mW/°C
°C/W
IEC 61000−4−2 (ESD)
Symbol
Air
Contact
Per Human Body Model
Per Machine Model
Total Power Dissipation on FR−5 Board
(Note 1) @ TA = 25°C
Derate above 25°C
Thermal Resistance Junction−to−Ambient
RqJA
Junction and Storage Temperature Range
TJ, Tstg
−55 to
+150
°C
TL
260
°C
Lead Solder Temperature − Maximum
(10 Second Duration)
⎪
PD
DEVICE MARKING INFORMATION
See specific marking information in the device marking
column of the table on page 2 of this data sheet.
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−5 = 1.0 x 0.75 x 0.62 in.
© Semiconductor Components Industries, LLC, 2013
January, 2013 − Rev. 4
1
Publication Order Number:
UESD3.3DT5G/D
mESD3.3DT5G SERIES
ELECTRICAL CHARACTERISTICS
I
(TA = 25°C unless otherwise noted)
Symbol
IPP
Maximum Reverse Peak Pulse Current
VC
Clamping Voltage @ IPP
VRWM
IR
VBR
Working Peak Reverse Voltage
VC VBR VRWM
Maximum Reverse Leakage Current @ VRWM
Breakdown Voltage @ IT
IT
Test Current
IF
Forward Current
VF
Forward Voltage @ IF
Ppk
Peak Power Dissipation
C
IF
Parameter
V
IR VF
IT
IPP
Max. Capacitance @VR = 0 and f = 1 MHz
Uni−Directional TVS
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, VF = 1.1 V Max. @ IF = 10 mA for all types)
Device
Marking
VRWM (V)
IR (mA) @ VRWM
VBR (V) @ IT
(Note 2)
IT
C (pF)
Max
Max
Min
mA
Typ
UESD3.3DT5G
L0
3.3
1.0
5.0
1.0
47
UESD5.0DT5G
L2
5.0
0.1
6.2
1.0
38
UESD6.0DT5G
L3
6.0
0.1
7.0
1.0
34
Device*
*Other voltages available upon request.
2. VBR is measured with a pulse test current IT at an ambient temperature of 25°C.
http://onsemi.com
2
mESD3.3DT5G SERIES
7.4
20
7.3
18
7.2
16
7.1
14
mESDxxDT5G
7.0
IR (nA)
BREAKDOWN VOLTAGE (VOLTS) (VZ @ IZ)
TYPICAL CHARACTERISTICS
6.9
6.8
6.7
12
10
8
6.6
6
6.5
4
mESDxxDT5G
6.4
2
6.3
−55
0
−55
+ 150
+ 25
TEMPERATURE (°C)
Figure 1. Typical Breakdown Voltage
versus Temperature
Figure 2. Typical Leakage Current
versus Temperature
300
PD, POWER DISSIPATION (mW)
45
40
CAPACITANCE (pF)
+ 150
+ 25
TEMPERATURE (°C)
35
30
mESDxxDT5G
25
20
15
10
5
0
0
1
2
3
4
250
200
150
100
0
5
FR−5 BOARD
50
0
BIAS VOLTAGE (V)
Figure 3. Typical Capacitance versus Bias Voltage
25
50
75
100
125
TEMPERATURE (°C)
150
175
Figure 4. Steady State Power Derating Curve
Figure 5. Positive 8 kV contact per IEC 6100−4−2
− mESD5.0DT5G
Figure 6. Negative 8 kV contact per IEC 61000−4−2
− mESD5.0DT5G
http://onsemi.com
3
mESD3.3DT5G SERIES
PACKAGE DIMENSIONS
SOT−723
CASE 631AA
ISSUE D
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS OR GATE BURRS.
−X−
D
b1
A
−Y−
3
E
1
2X
HE
2
2X
e
b
C
0.08 X Y
SIDE VIEW
TOP VIEW
3X
1
3X
DIM
A
b
b1
C
D
E
e
HE
L
L2
L
MILLIMETERS
MIN
NOM
MAX
0.45
0.50
0.55
0.15
0.21
0.27
0.25
0.31
0.37
0.07
0.12
0.17
1.15
1.20
1.25
0.75
0.80
0.85
0.40 BSC
1.15
1.20
1.25
0.29 REF
0.15
0.20
0.25
STYLE 4:
PIN 1. CATHODE
2. CATHODE
3. ANODE
L2
BOTTOM VIEW
RECOMMENDED
SOLDERING FOOTPRINT*
2X
0.40
2X
0.27
PACKAGE
OUTLINE
1.50
3X
0.52
0.36
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks,
copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC
reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any
particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without
limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications
and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC
does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for
surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where
personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and
its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly,
any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture
of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: [email protected]
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5817−1050
http://onsemi.com
4
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
UESD3.3DT5G/D