TC1072 DATA SHEET (02/27/2007) DOWNLOAD

TC1072/TC1073
50mA and 100mA CMOS LDOs with Shutdown, ERROR Output and VREF Bypass
Features:
General Description
• 50 µA Ground Current for Longer Battery Life
• Very Low Dropout Voltage
• Choice of 50 mA (TC1072) and 100 mA (TC1073)
Output
• High Output Voltage Accuracy
• Standard or Custom Output Voltages
• Power-Saving Shutdown Mode
• ERROR Output Can Be Used as a Low Battery
Detector or Processor Reset Generator
• Bypass Input for Ultra Quiet Operation
• Overcurrent and Overtemperature Protection
• Space-Saving 6-Pin SOT-23 Package
• Pin Compatible Upgrades for Bipolar Regulators
• Standard Output Voltage Options:
- 1.8V, 2.5V, 2.6V, 2.7V, 2.8V, 2.85V, 3.0V,
3.3V, 3.6V, 4.0V, 5.0V
• Other output voltages are available. Please
contact Microchip Technology Inc. for details.
The TC1072 and TC1073 are high accuracy (typically
±0.5%) CMOS upgrades for older (bipolar) low dropout
regulators. Designed specifically for battery-operated
systems, the devices’ CMOS construction eliminates
wasted ground current, significantly extending battery
life. Total supply current is typically 50 µA at full load
(20 to 60 times lower than in bipolar regulators).
The TC1072 and TC1073 are stable with an output
capacitor of only 1 µF and have a maximum output
current of 50 mA, and 100 mA, respectively. For higher
output current versions, please see the TC1185,
TC1186, TC1187 (IOUT = 150 mA) and TC1107,
TC1108 and TC1173 (IOUT = 300 mA) data sheets.
Applications:
•
•
•
•
•
•
•
Battery Operated Systems
Portable Computers
Medical Instruments
Instrumentation
Cellular/GSM/PHS Phones
Linear Post-Regulators for SMPS
Pagers
Package Type
6-Pin SOT-23
VOUT Bypass ERROR
Typical Application Circuit
RP
VIN
1
VIN
VOUT
6
2
GND
Bypass
ERROR
4
1
2
3
VIN
GND
SHDN
5
4
SHDN
5
1 µF
CBYPASS
470 pF
3
6
VOUT
+
TC1072
TC1073
The devices’ key features include ultra low noise
operation (plus optional Bypass input); very low
dropout voltage (typically 85 mV, TC1072 and 180 mV,
TC1073 at full load) and fast response to step changes
in load. An error output (ERROR) is asserted when the
devices are out-of-regulation (due to a low input
voltage or excessive output current). ERROR can be
used as a low battery warning or as a processor
RESET signal (with the addition of an external RC
network). Supply current is reduced to 0.5 µA (max)
and both VOUT and ERROR are disabled when the
shutdown input is low. The devices incorporate both
overtemperature and overcurrent protection.
ERROR
Shutdown Control
(from Power Control Logic)
© 2007 Microchip Technology Inc.
DS21354D-page 1
TC1072/TC1073
1.0
ELECTRICAL
CHARACTERISTICS
Absolute Maximum Ratings†
Input Voltage .........................................................6.5V
Output Voltage........................... (-0.3V) to (VIN + 0.3V)
Power Dissipation................Internally Limited (Note 6)
Maximum Voltage on Any Pin ........VIN +0.3V to -0.3V
Operating Temperature Range...... -40°C < TJ < 125°C
Storage Temperature..........................-65°C to +150°C
† Note: Stresses above those listed under "Absolute
Maximum Ratings" may cause permanent damage to
the device. These are stress ratings only and functional
operation of the device at these or any other conditions
above those indicated in the operation sections of the
specifications is not implied. Exposure to Absolute
Maximum Rating conditions for extended periods may
affect device reliability.
TC1072/TC1073 ELECTRICAL SPECIFICATIONS
Electrical Characteristics: Unless otherwise noted, VIN = VOUT + 1V, IL = 0.1 mA, CL = 3.3 μF, SHDN > VIH, TA = +25°C.
Boldface type specifications apply for junction temperatures of -40°C to +125°C.
Parameter
Min
Typ
Max
Units
VIN
Symbol
Input Operating Voltage
2.7
—
6.0
V
Note 9
IOUTMAX
Maximum Output Current
50
100
—
—
—
—
mA
mA
TC1072
TC1073
VOUT
Output Voltage
V
Note 1
TCVOUT
VOUT Temperature Coefficient
Note 2
VR –
2.5%
VR ±0.5% VR + 2.5%
—
—
20
40
—
—
ppm/°C
Test Conditions
ΔVOUT/ΔVIN
Line Regulation
—
0.05
0.35
%
(VR + 1V) ≤ VIN ≤ 6V
ΔVOUT/VOUT
Load Regulation
—
0.5
2.0
%
IL = 0.1 mA to IOUTMAX
(Note 3)
VIN-VOUT
Dropout Voltage
—
—
—
—
2
65
85
180
—
—
120
250
mV
IL = 0.1 mA
IL = 20 mA
IL = 50 mA
IL = 100 mA (Note 4),
TC1073
IIN
Supply Current
—
50
80
µA
SHDN = VIH, IL = 0 (Note 8)
IINSD
Shutdown Supply Current
—
0.05
0.5
µA
SHDN = 0V
PSRR
Power Supply Rejection Ratio
—
64
—
dB
FRE ≤ 1 kHz
IOUTSC
Output Short Circuit Current
—
300
450
mA
VOUT = 0V
ΔVOUT/ΔPD
Thermal Regulation
—
0.04
—
V/W
Notes 5, 6
TSD
Thermal Shutdown Die Temperature
—
160
—
°C
ΔTSD
Thermal Shutdown Hysteresis
—
10
—
°C
eN
Output Noise
—
260
—
nV/√Hz
Note
1:
2:
3:
4:
5:
6:
7:
8:
9:
IL = IOUTMAX
470 pF from Bypass to GND
VR is the regulator output voltage setting. For example: VR = 2.5V, 2.7V, 2.85V, 3.0V, 3.3V, 3.6V, 4.0V, 5.0V.
TC VOUT = (VOUTMAX – VOUTMIN) x 106
VOUT x ΔT
Regulation is measured at a constant junction temperature using low duty cycle pulse testing. Load regulation is tested over a load range
from 0.1 mA to the maximum specified output current. Changes in output voltage due to heating effects are covered by the thermal
regulation specification.
Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its nominal value.
Thermal Regulation is defined as the change in output voltage at a time T after a change in power dissipation is applied, excluding load or
line regulation effects. Specifications are for a current pulse equal to ILMAX at VIN = 6V for T = 10 ms.
The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction temperature and the
thermal resistance from junction-to-air (i.e., TA, TJ, θJA). Exceeding the maximum allowable power dissipation causes the device to initiate
thermal shutdown. Please see Section 5.0 “Thermal Considerations” for more details.
Hysteresis voltage is referenced by VR.
Apply for Junction Temperatures of -40°C to +85°C.
The minimum VIN has to justify the conditions = VIN ≥ VR + VDROPOUT and VIN ≥ 2.7V for IL = 0.1 mA to IOUTMAX.
DS21354D-page 2
© 2007 Microchip Technology Inc.
TC1072/TC1073
TC1072/TC1073 ELECTRICAL SPECIFICATIONS (CONTINUED)
Electrical Characteristics: Unless otherwise noted, VIN = VOUT + 1V, IL = 0.1 mA, CL = 3.3 μF, SHDN > VIH, TA = +25°C.
Boldface type specifications apply for junction temperatures of -40°C to +125°C.
Symbol
Parameter
Min
Typ
Max
Units
Test Conditions
SHDN Input
VIH
SHDN Input High Threshold
45
—
—
%VIN
VIN = 2.5V to 6.5V
VIL
SHDN Input Low Threshold
—
—
15
%VIN
VIN = 2.5V to 6.5V
1.0
—
—
V
ERROR Open Drain Output
VINMIN
Minimum VIN Operating Voltage
VOL
Output Logic Low Voltage
—
—
400
mV
VTH
ERROR Threshold Voltage
—
0.95 x VR
—
V
VHYS
ERROR Positive Hysteresis
—
50
—
mV
Note 7
tDELAY
VOUT to ERROR Delay
—
2.5
—
ms
Vout falling from VR to
VR-10%
Note
1:
2:
3:
4:
5:
6:
7:
8:
9:
1 mA Flows to ERROR
See Figure 4-2
VR is the regulator output voltage setting. For example: VR = 2.5V, 2.7V, 2.85V, 3.0V, 3.3V, 3.6V, 4.0V, 5.0V.
TC VOUT = (VOUTMAX – VOUTMIN) x 106
VOUT x ΔT
Regulation is measured at a constant junction temperature using low duty cycle pulse testing. Load regulation is tested over a load range
from 0.1 mA to the maximum specified output current. Changes in output voltage due to heating effects are covered by the thermal
regulation specification.
Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its nominal value.
Thermal Regulation is defined as the change in output voltage at a time T after a change in power dissipation is applied, excluding load or
line regulation effects. Specifications are for a current pulse equal to ILMAX at VIN = 6V for T = 10 ms.
The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction temperature and the
thermal resistance from junction-to-air (i.e., TA, TJ, θJA). Exceeding the maximum allowable power dissipation causes the device to initiate
thermal shutdown. Please see Section 5.0 “Thermal Considerations” for more details.
Hysteresis voltage is referenced by VR.
Apply for Junction Temperatures of -40°C to +85°C.
The minimum VIN has to justify the conditions = VIN ≥ VR + VDROPOUT and VIN ≥ 2.7V for IL = 0.1 mA to IOUTMAX.
© 2007 Microchip Technology Inc.
DS21354D-page 3
TC1072/TC1073
2.0
TYPICAL CHARACTERISTICS CURVES
Note:
The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein
are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
Note: Unless otherwise specified, all parts are measured at temperature = +25°C.
Dropout Voltage vs. Temperature (VOUT = 3.3V)
0.020
0.100
ILOAD = 10mA
0.090
DROPOUT VOLTAGE (V)
DROPOUT VOLTAGE (V)
0.018
0.016
0.014
0.012
0.010
0.008
0.006
0.004
CIN = 1μF
COUT = 1μF
0.002
-40
0.200
0
20
50
TEMPERATURE (°C)
70
0.060
0.050
0.040
0.030
0.020
0.300
ILOAD = 100mA
0.120
0.100
0.080
0.060
0.040
CIN = 1μF
COUT = 1μF
0
20
50
TEMPERATURE (°C)
70
125
Dropout Voltage vs. Temperature (VOUT = 3.3V)
0.250
0.200
0.150
0.100
0.050
CIN = 1μF
COUT = 1μF
0.000
0.000
-40
-20
0
20
50
70
125
-40
TEMPERATURE (°C)
Ground Current vs. VIN (VOUT = 3.3V)
90
ILOAD = 10mA
80
70
60
50
40
30
20
CIN = 1μF
COUT = 1μF
10
0
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7 7.5
VIN (V)
-20
0
20
50
TEMPERATURE (°C)
70
125
Ground Current vs. VIN (VOUT = 3.3V)
ILOAD = 100mA
80
GND CURRENT (μA)
GND CURRENT (μA)
-20
ILOAD = 150mA
0.140
90
CIN = 1μF
COUT = 1μF
-40
Dropout Voltage vs. Temperature (VOUT = 3.3V)
0.160
0.020
0.070
0.000
125
DROPOUT VOLTAGE (V)
DROPOUT VOLTAGE (V)
0.180
-20
0.080
0.010
0.000
Dropout Voltage vs. Temperature (VOUT = 3.3V)
ILOAD = 50mA
70
60
50
40
30
20
CIN = 1μF
COUT = 1μF
10
0
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7 7.5
VIN (V)
DS21354D-page 4
© 2007 Microchip Technology Inc.
TC1072/TC1073
Note: Unless otherwise specified, all parts are measured at temperature = +25°C.
Ground Current vs. VIN (VOUT = 3.3V)
80
3
60
2.5
50
VOUT (V)
GND CURRENT (μA)
ILOAD = 0
ILOAD = 150mA
70
VOUT vs. VIN (VOUT = 3.3V)
3.5
40
30
2
1.5
1
20
CIN = 1μF
COUT = 1μF
10
0.5
0
0
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7 7.5
VIN (V)
0
0.5 1 1.5
2 2.5 3 3.5
4 4.5 5
5.5 6 6.5 7
VIN (V)
VOUT vs. VIN (VOUT = 3.3V)
3.5
3.0
CIN = 1μF
COUT = 1μF
Output Voltage vs. Temperature (VOUT = 3.3V)
3.320
ILOAD = 100mA
ILOAD = 10mA
3.315
3.310
2.5
VOUT (V)
VOUT (V)
3.305
2.0
1.5
3.300
3.295
3.290
1.0
3.285
0.5
CIN = 1μF
COUT = 1μF
0.0
0
3.290
3.288
0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7
VIN (V)
CIN = 1μF
COUT = 1μF
VIN = 4.3V
3.280
3.275
-40
-20
-10
0
20
40
85
125
TEMPERATURE (°C)
Output Voltage vs. Temperature (VOUT = 3.3V)
ILOAD = 150mA
VOUT (V)
3.286
3.284
3.282
3.280
3.278
3.276
CIN = 1μF
COUT = 1μF
VIN = 4.3V
3.274
-40
-20
-10
0
20
40
85
125
TEMPERATURE (°C)
© 2007 Microchip Technology Inc.
DS21354D-page 5
TC1072/TC1073
Note: Unless otherwise specified, all parts are measured at temperature = +25°C.
Output Voltage vs. Temperature (VOUT = 5V)
5.025
4.990
4.988
5.010
4.986
5.005
5.000
4.995
4.990
4.985
4.984
4.982
4.980
4.978
VIN = 6V
CIN = 1μF
COUT = 1μF
-40
ILOAD = 150mA
4.992
5.015
VOUT (V)
VOUT (V)
5.020
Output Voltage vs. Temperature (VOUT = 5V)
4.994
ILOAD = 10mA
VIN = 6V
CIN = 1μF
COUT = 1μF
4.976
-20
-10
0
20
40
85
4.974
125
-40
-20
-10
TEMPERATURE (°C)
ILOAD = 10mA
70
50
40
30
20
10
VIN = 6V
CIN = 1μF
COUT = 1μF
-20
125
ILOAD = 150mA
50
40
30
20
VIN = 6V
CIN = 1μF
COUT = 1μF
-40
-10
0
20
40
TEMPERATURE (°C)
85
1.0
-20
-10
125
20
40
85
125
Power Supply Rejection Ratio
Stability Region vs. Load Current
-30
-35
COUT = 1μF
to 10μF
-40
100
-45
10
1
0
TEMPERATURE (°C)
1000
RLOAD = 50Ω
COUT = 1μF
CIN = 1μF
CBYP = 0
COUT ESR (Ω)
NOISE (μV/√Hz)
85
0
Output Noise vs. Frequency
10.0
40
60
10
0
-40
20
Temperature vs. Quiescent Current (VOUT = 5V)
80
Stable Region
PSRR (dB)
GND CURRENT (μA)
60
Temperature vs. Quiescent Current (VOUT = 5V)
GND CURRENT (μA)
70
0
TEMPERATURE (°C)
-50
IOUT = 10mA
VINDC = 4V
VINAC = 100mVp-p
VOUT = 3V
CIN = 0
COUT = 1μF
-55
-60
-65
0.1
-70
0.1
-75
0.0
0.01K 0.1K
0.01
1K
10K 100K 1000K
FREQUENCY (Hz)
DS21354D-page 6
0 10 20 30 40 50 60 70 80 90 100
LOAD CURRENT (mA)
-80
0.01K 0.1K
1K
10K 100K 1000K
FREQUENCY (Hz)
© 2007 Microchip Technology Inc.
TC1072/TC1073
Note: Unless otherwise specified, all parts are measured at temperature = +25°C.
Measure Rise Time of 3.3V LDO with Bypass Capacitor
Measure Rise Time of 3.3V LDO without Bypass Capacitor
Conditions: CIN = 1μF, COUT = 1μF, CBYP = 470pF, ILOAD = 100mA
VIN = 4.3V, Temp = 25°C, Rise Time = 448μS
VSHDN
VOUT
Measure Fall Time of 3.3V LDO with Bypass Capacitor
Conditions: CIN = 1μF, COUT = 1μF, CBYP = 470pF, ILOAD = 50mA
VIN = 4.3V, Temp = 25°C, Fall Time = 100μS
VSHDN
VOUT
© 2007 Microchip Technology Inc.
Conditions: CIN = 1μF, COUT = 1μF, CBYP = 0pF, ILOAD = 100mA
VIN = 4.3V, Temp = 25°C, Rise Time = 184μS
VSHDN
VOUT
Measure Fall Time of 3.3V LDO without Bypass Capacitor
Conditions: CIN = 1μF, COUT = 1μF, CBYP = 0pF, ILOAD = 100mA
VIN = 4.3V, Temp = 25°C, Fall Time = 52μS
VSHDN
VOUT
DS21354D-page 7
TC1072/TC1073
Note: Unless otherwise specified, all parts are measured at temperature = +25°C.
Measure Rise Time of 5.0V LDO with Bypass Capacitor
Measure Rise Time of 5.0V LDO without Bypass Capacitor
Conditions: CIN = 1μF, COUT = 1μF, CBYP = 470pF, ILOAD = 100mA
VIN = 6V, Temp = 25°C, Rise Time = 390μS
Conditions: CIN = 1μF, COUT = 1μF, CBYP = 0pF, ILOAD = 100mA
VIN = 6V, Temp = 25°C, Rise Time = 192μS
VSHDN
VSHDN
VOUT
VOUT
Measure Fall Time of 5.0V LDO with Bypass Capacitor
Conditions: CIN = 1μF, COUT = 1μF, CBYP = 470pF, ILOAD = 50mA
VIN = 6V, Temp = 25°C, Fall Time = 167μS
VSHDN
VOUT
DS21354D-page 8
Measure Fall Time of 5.0V LDO without Bypass Capacitor
Conditions: CIN = 1μF, COUT = 1μF, CBYP = 0pF, ILOAD = 100mA
VIN = 6V, Temp = 25°C, Fall Time = 88μS
VSHDN
VOUT
© 2007 Microchip Technology Inc.
TC1072/TC1073
Note: Unless otherwise specified, all parts are measured at temperature = +25°C.
Load Regulation of 3.3V LDO
Load Regulation of 3.3V LDO
Conditions: CIN = 1μF, COUT = 2.2μF, CBYP = 470pF,
VIN = VOUT + 0.25V, Temp = 25°C
Conditions: CIN = 1μF, COUT = 2.2μF, CBYP = 470pF,
VIN = VOUT + 0.25V, Temp = 25°C
ILOAD = 100mA switched in at 10kHz, VOUT is AC coupled
ILOAD = 50mA switched in at 10kHz, VOUT is AC coupled
ILOAD
ILOAD
VOUT
VOUT
Load Regulation of 3.3V LDO
Line Regulation of 3.3V LDO
Conditions: CIN = 1μF, COUT = 2.2μF, CBYP = 470pF,
VIN = VOUT + 0.25V, Temp = 25°C
Conditions: VIN = 4V, + 1V Squarewave @ 2.5kHz
ILOAD = 150mA switched in at 10kHz, VOUT is AC coupled
ILOAD
VOUT
VIN
VOUT
CIN = 0μF, COUT = 1μF, CBYP = 470pF,
ILOAD = 100mA, VIN & VOUT are AC coupled
© 2007 Microchip Technology Inc.
DS21354D-page 9
TC1072/TC1073
Note: Unless otherwise specified, all parts are measured at temperature = +25°C.
Line Regulation of 5.0V LDO
Thermal Shutdown Response of 5.0V LDO
Conditions: VIN = 6V, + 1V Squarewave @ 2.5kHz
Conditions: VIN = 6V, CIN = 0μF, COUT = 1μF
VIN
VOUT
VOUT
CIN = 0μF, COUT = 1μF, CBYP = 470pF,
ILOAD = 100mA, VIN & VOUT are AC coupled
ILOAD was increased until temperature of die reached about 160°C, at
which time integrated thermal protection circuitry shuts the regulator
off when die temperature exceeds approximately 160°C. The regulator
remains off until die temperature drops to approximately 150°C.
DS21354D-page 10
© 2007 Microchip Technology Inc.
TC1072/TC1073
3.0
PIN DESCRIPTIONS
The descriptions of the pins are listed in Table 3-1.
TABLE 3-1:
PIN FUNCTION TABLE
Pin No.
(6-Pin SOT-23)
Symbol
1
VIN
2
GND
3.1
Description
Unregulated supply input.
Ground terminal.
Shutdown control input.
3
SHDN
4
ERROR
Out-of-Regulation Flag. (Open drain output).
5
Bypass
Reference bypass input.
6
VOUT
Regulated voltage output.
Input Voltage Supply (VIN)
Connect unregulated input supply to the VIN pin. If
there is a large distance between the input supply and
the LDO regulator, some input capacitance is
necessary for proper operation. A 1 µF capacitor
connected from VIN to ground is recommended for
most applications.
3.2
Ground (GND)
Connect the unregulated input supply ground return to
GND. Also connect the negative side of the 1 µF typical
input decoupling capacitor close to GND and the
negative side of the output capacitor COUT to GND.
3.3
3.4
Out-Of-Regulation Flag (ERROR)
ERROR goes low when VOUT is out-of-tolerance by
approximately – 5%.
3.5
Reference Bypass Input (Bypass)
Connecting a 470 pF to this input further reduces
output noise.
3.6
Regulated Voltage Output (VOUT)
Connect the output load to VOUT of the LDO. Also
connect the positive side of the LDO output capacitor
as close as possible to the VOUT pin.
Shutdown Control Input (SHDN)
The regulator is fully enabled when a logic-high is
applied to SHDN. The regulator enters shutdown when
a logic-low is applied to SHDN. During shutdown,
output voltage falls to zero, ERROR is open-circuited
and supply current is reduced to 0.5 µA (maximum).
© 2007 Microchip Technology Inc.
DS21354D-page 11
TC1072/TC1073
4.0
DETAILED DESCRIPTION
The TC1072 and TC1073 are precision fixed output
voltage regulators. (If an adjustable version is desired,
please see the TC1070/TC1071/TC1187 data sheet.)
Unlike bipolar regulators, the TC1072 and TC1073’s
supply current does not increase with load current. In
addition, VOUT remains stable and within regulation
over the entire 0 mA to IOUTMAX load current range, (an
important consideration in RTC and CMOS RAM
battery back-up applications).
Figure 4-1 shows a typical application circuit. The
regulator is enabled any time the shutdown input
(SHDN) is at or above VIH, and shutdown (disabled)
when SHDN is at or below VIL. SHDN may be
controlled by a CMOS logic gate, or I/O port of a
microcontroller. If the SHDN input is not required, it
should be connected directly to the input supply. While
in shutdown, supply current decreases to 0.05 µA
(typical), VOUT falls to zero volts, and ERROR is opencircuited.
+
+
VIN
1 μF
VOUT
TC1072
TC1073
VOUT
+
1 μF
C1
Battery
GND
Bypass
C3, 470 pF
V+
SHDN
Shutdown Control
(to CMOS Logic or Tie
to VIN if unused)
FIGURE 4-1:
4.1
ERROR
C2 Required Only
if ERROR is used as a
Processor RESET Signal
(See Text)
R1
1M
BATTLOW
or RESET
0.2 μF
C2
Typical Application Circuit.
ERROR Open-Drain Output
ERROR is driven low whenever VOUT falls out of
regulation by more than –5% (typical). This condition
may be caused by low input voltage, output current
limiting, or thermal limiting. The ERROR output voltage
value (e.g. ERROR = VOL at 4.75V (typical) for a 5.0V
regulator and 2.85V (typical) for a 3.0V regulator).
ERROR output operation is shown in Figure 4-2.
VOUT
HYSTERESIS (VH)
VTH
tDELAY
ERROR
VIH
VOL
FIGURE 4-2:
4.2
Error Output Operation.
Output Capacitor
A 1 µF (minimum) capacitor from VOUT to ground is
recommended. The output capacitor should have an
effective series resistance greater than 0.1Ω and less
than 5.0Ω, and a resonant frequency above 1 MHz. A
1 µF capacitor should be connected from VIN to GND if
there is more than 10 inches of wire between the
regulator and the AC filter capacitor, or if a battery is
used as the power source. Aluminum electrolytic or
tantalum capacitor types can be used. (Since many
aluminum
electrolytic
capacitors
freeze
at
approximately
-30°C,
solid
tantalums
are
recommended for applications operating below -25°C.)
When operating from sources other than batteries,
supply-noise rejection and transient response can be
improved by increasing the value of the input and
output capacitors and employing passive filtering
techniques.
4.3
Bypass Input
A 470 pF capacitor connected from the Bypass input to
ground reduces noise present on the internal
reference, which in turn significantly reduces output
noise. If output noise is not a concern, this input may be
left unconnected. Larger capacitor values may be
used, but results in a longer time period to rated output
voltage when power is initially applied.
Note that ERROR is active tDELAY (typically, 2.5 µs)
after VOUT falls to VTH, and inactive when VOUT rises
above VTH by VHYS.
As shown in Figure 4-1, ERROR can be used as a
battery low flag, or as a processor RESET signal (with
the addition of timing capacitor C2). R1 x C2 should be
chosen to maintain ERROR below VIH of the processor
RESET input for at least 200 ms to allow time for the
system to stabilize. Pull-up resistor R1 can be tied to
VOUT, VIN or any other voltage less than (VIN + 0.3V).
DS21354D-page 12
© 2007 Microchip Technology Inc.
TC1072/TC1073
5.0
THERMAL CONSIDERATIONS
5.1
Thermal Shutdown
Integrated thermal protection circuitry shuts the
regulator off when die temperature exceeds 160°C.
The regulator remains off until the die temperature
drops to approximately 150°C.
5.2
Equation 5-1 can be used in conjunction with
Equation 5-2 to ensure regulator thermal operation is
within limits. For example:
Given:
Power Dissipation
The amount of power the regulator dissipates is
primarily a function of input and output voltage, and
output current. The following equation is used to
calculate worst-case actual power dissipation:
EQUATION 5-1:
= 3.0V ±5%
VOUTMIN
= 2.7V – 2.5%
ILOADMAX
= 40 mA
TJMAX
= 125°C
TAMAX
= 55°C
Find:
1. Actual power dissipation
2. Maximum allowable dissipation
Actual power dissipation:
PD ≈ (VINMAX – VOUTMIN)ILOADMAX
= [(3.0 x 1.05) – (2.7 x 0.975)] x 40 x 10–3
PD ≈ (VINMAX – VOUTMIN)ILOADMAX
Where:
PD
VINMAX
VOUTMIN
ILOADMAX
VINMAX
= 20.7 mW
Maximum allowable power dissipation:
= Worst-case actual power dissipation
= Maximum voltage on VIN
= Minimum regulator output voltage
= Maximum output (load) current
PDMAX = (TJMAX – TAMAX)
θJA
= (125 – 55)
220
= 318 mW
The
maximum
allowable
power
dissipation
(Equation 5-2) is a function of the maximum ambient
temperature (TAMAX), the maximum allowable die temperature (TJMAX) and the thermal resistance from junction-to-air (θJA). The 6-Pin SOT-23 package has a θJA
of approximately 220°C/Watt.
In this example, the TC1072 dissipates a maximum of
20.7 mW; below the allowable limit of 318 mW. In a
similar manner, Equation 5-1 and Equation 5-2 can be
used to calculate maximum current and/or input
voltage limits.
EQUATION 5-2:
5.3
PDMAX = (TJMAX – TAMAX)
θJA
where all terms are previously defined.
© 2007 Microchip Technology Inc.
Layout Considerations
The primary path of heat conduction out of the package
is via the package leads. Therefore, layouts having a
ground plane, wide traces at the pads, and wide power
supply bus lines combine to lower θJA and therefore
increase the maximum allowable power dissipation
limit.
DS21354D-page 13
TC1072/TC1073
6.0
PACKAGING INFORMATION
1
6.1
6.2
&
2
Package Marking Information
= part number code + threshold voltage
(two-digit code)
(V)
TC1072
Code
TC1073
Code
1.8
EY
FY
2.5
E1
F1
2.6
ET
FT
2.7
E2
F2
2.8
EZ
FZ
2.85
E8
F8
3.0
E3
F3
3.3
E4
F4
3.6
E9
F9
4.0
E0
F0
5.0
E6
F6
3
represents year and quarter code
4
represents production lot ID code
Taping Form
User Direction of Feed
Device
Marking
PIN 1
PIN 1
W, Width of
Carrier Tape
P,Pitch
Standard Reel Component
Orientation
Reverse Reel Component
Orientation
Carrier Tape, Number of Components per Reel and Reel Size
Package
Carrier Width (W)
Pitch (P)
Part Per Full Reel
Reel Size
6-Pin SOT-23
8 mm
4 mm
3000
7 in
DS21354D-page 14
© 2007 Microchip Technology Inc.
TC1072/TC1073
6-Lead Plastic Small Outline Transistor (CH) [SOT-23]
Note:
For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
b
4
N
E
E1
PIN 1 ID BY
LASER MARK
1
2
3
e
e1
D
A
A2
c
φ
L
A1
L1
Units
Dimension Limits
Number of Pins
MILLIMETERS
MIN
N
NOM
MAX
6
Pitch
e
0.95 BSC
Outside Lead Pitch
e1
1.90 BSC
Overall Height
A
0.90
–
Molded Package Thickness
A2
0.89
–
1.45
1.30
Standoff
A1
0.00
–
0.15
Overall Width
E
2.20
–
3.20
Molded Package Width
E1
1.30
–
1.80
Overall Length
D
2.70
–
3.10
Foot Length
L
0.10
–
0.60
Footprint
L1
0.35
–
0.80
Foot Angle
φ
0°
–
30°
Lead Thickness
c
0.08
–
0.26
Lead Width
b
0.20
–
0.51
Notes:
1. Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed 0.127 mm per side.
2. Dimensioning and tolerancing per ASME Y14.5M.
BSC: Basic Dimension. Theoretically exact value shown without tolerances.
Microchip Technology Drawing C04-028B
© 2007 Microchip Technology Inc.
DS21354D-page 15
TC1072/TC1073
NOTES:
DS21354D-page 16
© 2007 Microchip Technology Inc.
TC1072/TC1073
APPENDIX A:
REVISION HISTORY
Revision D (February 2007)
•
•
•
•
•
Page 1: Ground current changed to 50 µA.
Package type changed from SOT-23A to SOT-23.
Added voltage options.
TDELAY added to Table 1-1.
Section 3.0 “Pin Descriptions”: Added pin
descriptions.
• Section 4.1 “ERROR Open-Drain Output”:
Defined tDELAY.
• Changed Figure 4-2.
• Updated Packaging Information.
Revision C (January 2006)
• Undocumented changes.
Revision B (May 2002)
• Undocumented changes.
Revision A (March 2002)
• Original Release of this Document.
© 2007 Microchip Technology Inc.
DS21354D-page 17
TC1072/TC1073
NOTES:
DS21354D-page 18
© 2007 Microchip Technology Inc.
TC1072/TC1073
PRODUCT IDENTIFICATION SYSTEM
To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office.
PART NO.
Device
—
X.X
X
Threshold Temperature
Voltage
Range
XXXXX
Package
Device
TC1072: CMOS LDO with Shutdown, ERROR Output & VREF
Bypass
TC1073: CMOS LDO with Shutdown, ERROR Output & VREF
Bypass
Threshold voltage
(typical)
1.8
2.5
2.6
2.7
2.8
2.85
3.0
3.3
3.6
4.0
5.0
=
=
=
=
=
=
=
=
=
=
=
Temperature Range
V
= -40° C to +125° C
Package
CH713 =
1.8V
2.5V
2.6V
2.7V
2.8V
2.85V
3.0V
3.3V
3.6V
4.0V
5.0V
Examples:
a)
b)
c)
d)
e)
f)
g)
h)
i)
j)
k)
TC1072-1.8VCH713:
TC1072-2.5VCH713
TC1072-2.6VCH713
TC1072-2.7VCH713
TC1072-2.8VCH713
TC1072-2.85VCH713
TC1072-3.0VCH713
TC1072-3.3VCH713
TC1072-3.6VCH713
TC1072-4.0VCH713
TC1072-5.0VCH713
1.8V
2.5V
2.6V
2.7V
2.8V
2.85V
3.0V
3.3V
3.6V
4.0V
5.0V
a)
b)
c)
d)
e)
f)
g)
h)
i)
j)
k)
TC1073-1.8VCH713:
TC1073-2.5VCH713
TC1073-2.6VCH713
TC1073-2.7VCH713
TC1073-2.8VCH713
TC1073-2.85VCH713
TC1073-3.0VCH713
TC1073-3.3VCH713
TC1073-3.6VCH713
TC1073-4.0VCH713
TC1073-5.0VCH713
1.8V
2.5V
2.6V
2.7V
2.8V
2.85V
3.0V
3.3V
3.6V
4.0V
5.0V
Plastic small outline transistor (CH) SOT-23,
6 lead, (tape and reel).
© 2007 Microchip Technology Inc.
DS21354D-page 19
TC1072/TC1073
NOTES:
DS21354D-page 20
© 2007 Microchip Technology Inc.
Note the following details of the code protection feature on Microchip devices:
•
Microchip products meet the specification contained in their particular Microchip Data Sheet.
•
Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the
intended manner and under normal conditions.
•
There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our
knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip’s Data
Sheets. Most likely, the person doing so is engaged in theft of intellectual property.
•
Microchip is willing to work with the customer who is concerned about the integrity of their code.
•
Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not
mean that we are guaranteeing the product as “unbreakable.”
Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our
products. Attempts to break Microchip’s code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts
allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act.
Information contained in this publication regarding device
applications and the like is provided only for your convenience
and may be superseded by updates. It is your responsibility to
ensure that your application meets with your specifications.
MICROCHIP MAKES NO REPRESENTATIONS OR
WARRANTIES OF ANY KIND WHETHER EXPRESS OR
IMPLIED, WRITTEN OR ORAL, STATUTORY OR
OTHERWISE, RELATED TO THE INFORMATION,
INCLUDING BUT NOT LIMITED TO ITS CONDITION,
QUALITY, PERFORMANCE, MERCHANTABILITY OR
FITNESS FOR PURPOSE. Microchip disclaims all liability
arising from this information and its use. Use of Microchip
devices in life support and/or safety applications is entirely at
the buyer’s risk, and the buyer agrees to defend, indemnify and
hold harmless Microchip from any and all damages, claims,
suits, or expenses resulting from such use. No licenses are
conveyed, implicitly or otherwise, under any Microchip
intellectual property rights.
Trademarks
The Microchip name and logo, the Microchip logo, Accuron,
dsPIC, KEELOQ, KEELOQ logo, microID, MPLAB, PIC,
PICmicro, PICSTART, PRO MATE, PowerSmart, rfPIC, and
SmartShunt are registered trademarks of Microchip
Technology Incorporated in the U.S.A. and other countries.
AmpLab, FilterLab, Linear Active Thermistor, Migratable
Memory, MXDEV, MXLAB, PS logo, SEEVAL, SmartSensor
and The Embedded Control Solutions Company are
registered trademarks of Microchip Technology Incorporated
in the U.S.A.
Analog-for-the-Digital Age, Application Maestro, CodeGuard,
dsPICDEM, dsPICDEM.net, dsPICworks, ECAN,
ECONOMONITOR, FanSense, FlexROM, fuzzyLAB,
In-Circuit Serial Programming, ICSP, ICEPIC, Mindi, MiWi,
MPASM, MPLAB Certified logo, MPLIB, MPLINK, PICkit,
PICDEM, PICDEM.net, PICLAB, PICtail, PowerCal,
PowerInfo, PowerMate, PowerTool, REAL ICE, rfLAB,
rfPICDEM, Select Mode, Smart Serial, SmartTel, Total
Endurance, UNI/O, WiperLock and ZENA are trademarks of
Microchip Technology Incorporated in the U.S.A. and other
countries.
SQTP is a service mark of Microchip Technology Incorporated
in the U.S.A.
All other trademarks mentioned herein are property of their
respective companies.
© 2007, Microchip Technology Incorporated, Printed in the
U.S.A., All Rights Reserved.
Printed on recycled paper.
Microchip received ISO/TS-16949:2002 certification for its worldwide
headquarters, design and wafer fabrication facilities in Chandler and
Tempe, Arizona, Gresham, Oregon and Mountain View, California. The
Company’s quality system processes and procedures are for its PIC®
MCUs and dsPIC® DSCs, KEELOQ® code hopping devices, Serial
EEPROMs, microperipherals, nonvolatile memory and analog
products. In addition, Microchip’s quality system for the design and
manufacture of development systems is ISO 9001:2000 certified.
© 2007 Microchip Technology Inc.
DS21354D-page 21
WORLDWIDE SALES AND SERVICE
AMERICAS
ASIA/PACIFIC
ASIA/PACIFIC
EUROPE
Corporate Office
2355 West Chandler Blvd.
Chandler, AZ 85224-6199
Tel: 480-792-7200
Fax: 480-792-7277
Technical Support:
http://support.microchip.com
Web Address:
www.microchip.com
Asia Pacific Office
Suites 3707-14, 37th Floor
Tower 6, The Gateway
Habour City, Kowloon
Hong Kong
Tel: 852-2401-1200
Fax: 852-2401-3431
India - Bangalore
Tel: 91-80-4182-8400
Fax: 91-80-4182-8422
India - New Delhi
Tel: 91-11-4160-8631
Fax: 91-11-4160-8632
Austria - Wels
Tel: 43-7242-2244-39
Fax: 43-7242-2244-393
Denmark - Copenhagen
Tel: 45-4450-2828
Fax: 45-4485-2829
India - Pune
Tel: 91-20-2566-1512
Fax: 91-20-2566-1513
France - Paris
Tel: 33-1-69-53-63-20
Fax: 33-1-69-30-90-79
Japan - Yokohama
Tel: 81-45-471- 6166
Fax: 81-45-471-6122
Germany - Munich
Tel: 49-89-627-144-0
Fax: 49-89-627-144-44
Atlanta
Duluth, GA
Tel: 678-957-9614
Fax: 678-957-1455
Boston
Westborough, MA
Tel: 774-760-0087
Fax: 774-760-0088
Chicago
Itasca, IL
Tel: 630-285-0071
Fax: 630-285-0075
Dallas
Addison, TX
Tel: 972-818-7423
Fax: 972-818-2924
Detroit
Farmington Hills, MI
Tel: 248-538-2250
Fax: 248-538-2260
Kokomo
Kokomo, IN
Tel: 765-864-8360
Fax: 765-864-8387
Los Angeles
Mission Viejo, CA
Tel: 949-462-9523
Fax: 949-462-9608
Santa Clara
Santa Clara, CA
Tel: 408-961-6444
Fax: 408-961-6445
Toronto
Mississauga, Ontario,
Canada
Tel: 905-673-0699
Fax: 905-673-6509
Australia - Sydney
Tel: 61-2-9868-6733
Fax: 61-2-9868-6755
China - Beijing
Tel: 86-10-8528-2100
Fax: 86-10-8528-2104
China - Chengdu
Tel: 86-28-8665-5511
Fax: 86-28-8665-7889
Korea - Gumi
Tel: 82-54-473-4301
Fax: 82-54-473-4302
China - Fuzhou
Tel: 86-591-8750-3506
Fax: 86-591-8750-3521
Korea - Seoul
Tel: 82-2-554-7200
Fax: 82-2-558-5932 or
82-2-558-5934
China - Hong Kong SAR
Tel: 852-2401-1200
Fax: 852-2401-3431
Malaysia - Penang
Tel: 60-4-646-8870
Fax: 60-4-646-5086
China - Qingdao
Tel: 86-532-8502-7355
Fax: 86-532-8502-7205
Philippines - Manila
Tel: 63-2-634-9065
Fax: 63-2-634-9069
China - Shanghai
Tel: 86-21-5407-5533
Fax: 86-21-5407-5066
Singapore
Tel: 65-6334-8870
Fax: 65-6334-8850
China - Shenyang
Tel: 86-24-2334-2829
Fax: 86-24-2334-2393
Taiwan - Hsin Chu
Tel: 886-3-572-9526
Fax: 886-3-572-6459
China - Shenzhen
Tel: 86-755-8203-2660
Fax: 86-755-8203-1760
Taiwan - Kaohsiung
Tel: 886-7-536-4818
Fax: 886-7-536-4803
China - Shunde
Tel: 86-757-2839-5507
Fax: 86-757-2839-5571
Taiwan - Taipei
Tel: 886-2-2500-6610
Fax: 886-2-2508-0102
China - Wuhan
Tel: 86-27-5980-5300
Fax: 86-27-5980-5118
Thailand - Bangkok
Tel: 66-2-694-1351
Fax: 66-2-694-1350
Italy - Milan
Tel: 39-0331-742611
Fax: 39-0331-466781
Netherlands - Drunen
Tel: 31-416-690399
Fax: 31-416-690340
Spain - Madrid
Tel: 34-91-708-08-90
Fax: 34-91-708-08-91
UK - Wokingham
Tel: 44-118-921-5869
Fax: 44-118-921-5820
China - Xian
Tel: 86-29-8833-7250
Fax: 86-29-8833-7256
12/08/06
DS21354D-page 22
© 2007 Microchip Technology Inc.