MICROCHIP TC1072

TC1072/TC1073
50mA and 100mA CMOS LDOs with Shutdown, ERROR Output and VREF Bypass
Features
• Zero Ground Current for Longer Battery Life
• Very Low Dropout Voltage
• Choice of 50mA (TC1072) and 100mA (TC1073)
Output
• High Output Voltage Accuracy
• Standard or Custom Output Voltages
• Power-Saving Shutdown Mode
• ERROR Output Can Be Used as a Low Battery
Detector or Processor Reset Generator
• Bypass Input for Ultra Quiet Operation
• Over Current and Over Temperature Protection
• Space-Saving 6-Pin SOT-23A Package
• Pin Compatible Upgrades for Bipolar Regulators
Applications
•
•
•
•
•
•
•
Battery Operated Systems
Portable Computers
Medical Instruments
Instrumentation
Cellular/GSM/PHS Phones
Linear Post-Regulators for SMPS
Pagers
Device Selection Table
Part Number
Package
Junction
Temp. Range
TC1072-xxVCH
6-Pin SOT-23A
-40°C to +125°C
TC1073-xxVCH
6-Pin SOT-23A
-40°C to +125°C
NOTE: xx indicates output voltages
Available Output Voltages: 2.5, 2.7, 2.8, 2.85, 3.0, 3.3, 3.6,
4.0, 5.0.
Other output voltages are available. Please contact Microchip
Technology Inc. for details.
Package Type
6-Pin SOT-23A
VOUT Bypass ERROR
6
4
5
TC1072
TC1073
1
2
3
VIN
GND
SHDN
NOTE: 6-Pin SOT-23A is equivalent to the EIAJ (SC-74A)
 2002 Microchip Technology Inc.
DS21354B-page 1
TC1072/TC1073
General Description
The TC1072 and TC1073 are high accuracy (typically
±0.5%) CMOS upgrades for older (bipolar) low dropout
regulators. Designed specifically for battery-operated
systems, the devices’ CMOS construction eliminates
wasted ground current, significantly extending battery
life. Total supply current is typically 50µA at full load (20
to 60 times lower than in bipolar regulators).
The devices’ key features include ultra low noise
operation (plus optional Bypass input); very low
dropout voltage (typically 85mV, TC1072 and 180mV,
TC1073 at full load) and fast response to step changes
in load. An error output (ERROR) is asserted when the
devices are out-of-regulation (due to a low input
voltage or excessive output current). ERROR can be
used as a low battery warning or as a processor
RESET signal (with the addition of an external RC
network). Supply current is reduced to 0.5µA (max) and
both VOUT and ERROR are disabled when the
shutdown input is low. The devices incorporate both
over-temperature and over-current protection.
Typical Application
RP
VIN
1
VIN
VOUT
6
TC1072
TC1073
2
GND
Bypass
VOUT
+
1µF
5
CBYPASS
470pF
3
4
SHDN
ERROR
ERROR
Shutdown Control
(from Power Control Logic)
The TC1072 and TC1073 are stable with an output
capacitor of only 1µF and have a maximum output
current of 50mA, and 100mA respectively. For higher
output current versions, please see the TC1185,
TC1186, TC1187 (IOUT = 150mA) and TC1107, TC1108
and TC1173 (IOUT = 300mA) data sheets.
DS21354B-page 2
 2002 Microchip Technology Inc.
TC1072/TC1073
1.0
ELECTRICAL
CHARACTERISTICS
Absolute Maximum Ratings*
Input Voltage......................................................... 6.5V
Output Voltage ...........................(-0.3V) to (VIN + 0.3V)
Power Dissipation ............... Internally Limited (Note 6)
Maximum Voltage on Any Pin ........ VIN +0.3V to -0.3V
Operating Temperature Range ......-40°C < TJ < 125°C
Storage Temperature ......................... -65°C to +150°C
*Stresses above those listed under "Absolute Maximum
Ratings" may cause permanent damage to the device. These
are stress ratings only and functional operation of the device
at these or any other conditions above those indicated in the
operation sections of the specifications is not implied.
Exposure to Absolute Maximum Rating conditions for
extended periods may affect device reliability.
TC1072/TC1073 ELECTRICAL SPECIFICATIONS
Electrical Characteristics: VIN = VOUT + 1V, IL = 0.1mA, CL = 3.3µF, SHDN > VIH, TA = 25°C, unless otherwise noted. Boldface
type specifications apply for junction temperatures of -40°C to +125°C.
Symbol
Parameter
Min
Typ
Max
V IN
Input Operating Voltage
2.7
—
6.0
V
Note 9
IOUTMAX
Maximum Output Current
50
100
—
—
—
—
mA
mA
TC1072
TC1073
V
Note 1
ppm/°C
Note 2
V OUT
Output Voltage
TCVOUT
VOUT Temperature Coefficient
VR – 2.5% VR ±0.5% VR + 2.5%
—
—
20
40
—
—
Units
Test Conditions
∆VOUT/∆VIN
Line Regulation
—
0.05
0.35
%
(VR + 1V) ≤ VIN ≤ 6V
∆VOUT/VOUT
Load Regulation
—
0.5
2.0
%
IL = 0.1mA to IOUTMAX
(Note 3)
V IN-V OUT
Dropout Voltage
—
—
—
—
2
65
85
180
—
—
120
250
mV
IL = 0.1mA
IL = 20mA
IL = 50mA
IL = 100mA (Note 4), TC1073
IIN
Supply Current
—
50
80
µA
SHDN = VIH, IL = 0 (Note 8)
IINSD
Shutdown Supply Current
—
0.05
0.5
µA
SHDN = 0V
PSRR
Power Supply Rejection Ratio
—
64
—
dB
FRE ≤ 1kHz
IOUTSC
Output Short Circuit Current
—
300
450
mA
VOUT = 0V
∆VOUT/∆PD
Thermal Regulation
—
0.04
—
V/W
Notes 5, 6
TSD
Thermal Shutdown Die Temperature
—
160
—
°C
∆TSD
Thermal Shutdown Hysteresis
—
10
—
°C
eN
Output Noise
—
260
—
nV/√Hz
VIH
SHDN Input High Threshold
45
—
—
%VIN
VIN = 2.5V to 6.5V
V IL
SHDN Input Low Threshold
—
—
15
%VIN
VIN = 2.5V to 6.5V
IL = IOUT MAX
470pF from Bypass to GND
SHDN Input
Note
1:
2:
3:
4:
5:
6:
7:
8:
9:
VR is the regulator output voltage setting. For example: VR = 2.5V, 2.7V, 2.85V, 3.0V, 3.3V, 3.6V, 4.0V, 5.0V.
TC VOUT = (VOUTMAX – VOUTMIN) x 10 6
VOUT x ∆T
Regulation is measured at a constant junction temperature using low duty cycle pulse testing. Load regulation is tested over a load range
from 0.1mA to the maximum specified output current. Changes in output voltage due to heating effects are covered by the thermal
regulation specification.
Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its nominal value.
Thermal Regulation is defined as the change in output voltage at a time T after a change in power dissipation is applied, excluding load or
line regulation effects. Specifications are for a current pulse equal to ILMAX at VIN = 6V for T = 10 msec.
The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction temperature and the
thermal resistance from junction-to-air (i.e., TA, TJ, θJA). Exceeding the maximum allowable power dissipation causes the device to initiate
thermal shutdown. Please see Section 4.0 Thermal Considerations for more details.
Hysteresis voltage is referenced by VR.
Apply for Junction Temperatures of -40°C to +85°C.
The minimum VIN has to justify the conditions = VIN ≥ VR + VDROPOUT and VIN ≥ 2.7V for I L = 0.1mA to IOUT MAX.
 2002 Microchip Technology Inc.
DS21354B-page 3
TC1072/TC1073
TC1072/TC1073 ELECTRICAL SPECIFICATIONS (CONTINUED)
Electrical Characteristics: VIN = VOUT + 1V, IL = 0.1mA, CL = 3.3µF, SHDN > VIH , TA = 25°C, unless otherwise noted. Boldface
type specifications apply for junction temperatures of -40°C to +125°C.
Symbol
Parameter
Min
Typ
Max
Units
—
—
V
Test Conditions
ERROR Open Drain Output
VIN MIN
Minimum VIN Operating Voltage
1.0
VOL
Output Logic Low Voltage
—
—
400
mV
VTH
ERROR Threshold Voltage
—
0.95 x VR
—
V
ERROR Positive Hysteresis
—
50
—
mV
VHYS
Note
1:
2:
3:
4:
5:
6:
7:
8:
9:
1 mA Flows to ERROR
See Figure 3-2
Note 7
VR is the regulator output voltage setting. For example: VR = 2.5V, 2.7V, 2.85V, 3.0V, 3.3V, 3.6V, 4.0V, 5.0V.
TC VOUT = (VOUTMAX – VOUTMIN ) x 10 6
VOUT x ∆T
Regulation is measured at a constant junction temperature using low duty cycle pulse testing. Load regulation is tested over a load range
from 0.1mA to the maximum specified output current. Changes in output voltage due to heating effects are covered by the thermal
regulation specification.
Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its nominal value.
Thermal Regulation is defined as the change in output voltage at a time T after a change in power dissipation is applied, excluding load or
line regulation effects. Specifications are for a current pulse equal to ILMAX at VIN = 6V for T = 10 msec.
The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction temperature and the
thermal resistance from junction-to-air (i.e., TA, TJ, θ JA). Exceeding the maximum allowable power dissipation causes the device to initiate
thermal shutdown. Please see Section 4.0 Thermal Considerations for more details.
Hysteresis voltage is referenced by VR.
Apply for Junction Temperatures of -40°C to +85°C.
The minimum VIN has to justify the conditions = VIN ≥ VR + VDROPOUT and VIN ≥ 2.7V for IL = 0.1mA to IOUTMAX .
DS21354B-page 4
 2002 Microchip Technology Inc.
TC1072/TC1073
2.0
PIN DESCRIPTIONS
The descriptions of the pins are listed in Table 2-1.
TABLE 2-1:
PIN FUNCTION TABLE
Pin No.
(6-Pin SOT-23A)
Symbol
1
VIN
2
GND
3
SHDN
4
ERROR
5
Bypass
6
VOUT
 2002 Microchip Technology Inc.
Description
Unregulated supply input.
Ground terminal.
Shutdown control input. The regulator is fully enabled when a logic high is applied to this
input. The regulator enters shutdown when a logic low is applied to this input. During
shutdown, output voltage falls to zero and supply current is reduced to 0.05µA (typical).
Out-of-Regulation Flag. (Open drain output). This output goes low when VOUT is out-oftolerance by approximately – 5%.
Reference bypass input. Connecting a 470pF to this input further reduces output noise.
Regulated voltage output.
DS21354B-page 5
TC1072/TC1073
3.0
DETAILED DESCRIPTION
The TC1072 and TC1073 are precision fixed output
voltage regulators. (If an adjustable version is desired,
please see the TC1070/TC1071/TC1187 data sheet.)
Unlike bipolar regulators, the TC1072 and TC1073’s
supply current does not increase with load current. In
addition, VOUT remains stable and within regulation
over the entire 0mA to IOUTMAX load current range, (an
important consideration in RTC and CMOS RAM
battery back-up applications).
Figure 3-1 shows a typical application circuit. The
regulator is enabled any time the shutdown input
(SHDN) is at or above VIH, and shutdown (disabled)
when SHDN is at or below VIL. SHDN may be
controlled by a CMOS logic gate, or I/O port of a
microcontroller. If the SHDN input is not required, it
should be connected directly to the input supply. While
in shutdown, supply current decreases to 0.05µA
(typical), VOUT falls to zero volts, and ERROR is opencircuited.
FIGURE 3-1:
TYPICAL APPLICATION
CIRCUIT
VIN
+
1µF
+
VOUT
TC1072
TC1073
VOUT
+
1µF
C1
Battery
GND
Bypass
C3, 470pF
V+
SHDN
Shutdown Control
(to CMOS Logic or Tie
to VIN if unused)
3.1
R1
1M
BATTLOW
or RESET
0.2µF
C2
ERROR Open Drain Output
ERROR OUTPUT
OPERATION
VOUT
HYSTERESIS (VH)
VTH
ERROR
VIH
VOL
3.2
Output Capacitor
A 1µF (min) capacitor from VOUT to ground is
recommended. The output capacitor should have an
effective series resistance greater than 0.1Ω and less
than 5.0Ω, and a resonant frequency above 1MHz. A
1µF capacitor should be connected from V IN to GND if
there is more than 10 inches of wire between the
regulator and the AC filter capacitor, or if a battery is
used as the power source. Aluminum electrolytic or
tantalum capacitor types can be used. (Since many
aluminum electrolytic capacitors freeze at approximately -30°C, solid tantalums are recommended for
applications operating below -25°C.) When operating
from sources other than batteries, supply-noise
rejection and transient response can be improved by
increasing the value of the input and output capacitors
and employing passive filtering techniques.
3.3
ERROR
C2 Required Only
if ERROR is used as a
Processor RESET Signal
(See Text)
FIGURE 3-2:
Bypass Input
A 470pF capacitor connected from the Bypass input to
ground reduces noise present on the internal
reference, which in turn significantly reduces output
noise. If output noise is not a concern, this input may be
left unconnected. Larger capacitor values may be
used, but results in a longer time period to rated output
voltage when power is initially applied.
ERROR is driven low whenever VOUT falls out of
regulation by more than – 5% (typical). This condition
may be caused by low input voltage, output current
limiting, or thermal limiting. The ERROR output voltage
value (e.g. ERROR = VOL at 4.75V (typ.) for a 5.0V
regulator and 2.85V (typ.) for a 3.0V regulator).
ERROR output operation is shown in Figure 3-2.
Note that ERROR is active when V OUT falls to VTH, and
inactive when VOUT rises above VTH by VHYS.
As shown in Figure 3-1, ERROR can be used as a
battery low flag, or as a processor RESET signal (with
the addition of timing capacitor C2). R1 x C2 should be
chosen to maintain ERROR below VIH of the processor
RESET input for at least 200 msec to allow time for the
system to stabilize. Pull-up resistor R1 can be tied to
VOUT, VIN or any other voltage less than (VIN + 0.3V).
DS21354B-page 6
 2002 Microchip Technology Inc.
TC1072/TC1073
4.0
THERMAL CONSIDERATIONS
4.1
Thermal Shutdown
Integrated thermal protection circuitry shuts the
regulator off when die temperature exceeds 160°C.
The regulator remains off until the die temperature
drops to approximately 150°C.
4.2
Equation 4-1 can be used in conjunction with Equation
4-2 to ensure regulator thermal operation is within
limits. For example:
Given:
VINMAX
VOUTMIN = 2.7V – 2.5%
ILOADMAX = 40mA
Power Dissipation
The amount of power the regulator dissipates is
primarily a function of input and output voltage, and
output current. The following equation is used to
calculate worst case actual power dissipation:
EQUATION 4-1:
PD ≈ (VINMAX – V OUTMIN)ILOADMAX
Where:
PD
VINMAX
VOUTMIN
ILOAD MAX
= 3.0V ±5%
TJMAX
= 125°C
TAMAX
= 55°C
Find: 1. Actual power dissipation
2. Maximum allowable dissipation
Actual power dissipation:
PD ≈ (VINMAX – VOUTMIN)ILOADMAX
= [(3.0 x 1.05) – (2.7 x .975)]40 x 10–3
= 20.7mW
Maximum allowable power dissipation:
= Worst case actual power dissipation
= Maximum voltage on VIN
= Minimum regulator output voltage
= Maximum output (load) current
PDMAX = (TJMAX – TAMAX)
θJA
= (125 – 55)
220
= 318mW
The maximum allowable power dissipation (Equation
4-2) is a function of the maximum ambient temperature
(TAMAX), the maximum allowable die temperature
(TJMAX) and the thermal resistance from junction-to-air
(θJA). The 6-Pin SOT-23A package has a θJA of
approximately 220°C/Watt.
In this example, the TC1072 dissipates a maximum of
20.7mW; below the allowable limit of 318mW. In a
similar manner, Equation 4-1 and Equation 4-2 can be
used to calculate maximum current and/or input
voltage limits.
EQUATION 4-2:
4.3
PDMAX= (TJMAX – TAMAX)
θJA
Where all terms are previously defined.
 2002 Microchip Technology Inc.
Layout Considerations
The primary path of heat conduction out of the package
is via the package leads. Therefore, layouts having a
ground plane, wide traces at the pads, and wide power
supply bus lines combine to lower θJA and therefore
increase the maximum allowable power dissipation
limit.
DS21354B-page 7
TC1072/TC1073
5.0
TYPICAL CHARACTERISTICS
(Unless Otherwise Specified, All Parts Are Measured At Temperature = 25°C)
The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein are
not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
0.020
DROPOUT VOLTAGE (V)
0.018
Dropout Voltage vs. Temperature (VOUT = 3.3V)
ILOAD = 10mA
0.090
0.016
0.014
0.012
0.010
0.008
0.006
0.004
0.002
0.100
DROPOUT VOLTAGE (V)
Note:
CIN = 1µF
COUT = 1µF
-40
0.200
0
20
50
TEMPERATURE (°C)
70
0.060
0.050
0.040
0.030
0.020
Dropout Voltage vs. Temperature (VOUT = 3.3V)
0.300
ILOAD = 100mA
0.120
0.100
0.080
0.060
0.040
CIN = 1µF
COUT = 1µF
0.000
0
20
50
TEMPERATURE (°C)
70
125
Dropout Voltage vs. Temperature (VOUT = 3.3V)
0.250
0.200
0.150
0.100
0.050
CIN = 1µF
COUT = 1µF
0.000
-40
-20
0
20
50
70
125
-40
TEMPERATURE (°C)
Ground Current vs. VIN (VOUT = 3.3V)
90
ILOAD = 10mA
80
70
60
50
40
30
20
CIN = 1µF
COUT = 1µF
10
0
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7 7.5
VIN (V)
DS21354B-page 8
-20
0
20
50
TEMPERATURE (°C)
70
125
Ground Current vs. VIN (VOUT = 3.3V)
ILOAD = 100mA
80
GND CURRENT (µA)
GND CURRENT (µA)
-20
ILOAD = 150mA
0.140
90
CIN = 1µF
COUT = 1µF
-40
0.160
0.020
0.070
0.000
125
DROPOUT VOLTAGE (V)
DROPOUT VOLTAGE (V)
0.180
-20
ILOAD = 50mA
0.080
0.010
0.000
Dropout Voltage vs. Temperature (VOUT = 3.3V)
70
60
50
40
30
20
CIN = 1µF
COUT = 1µF
10
0
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7 7.5
VIN (V)
 2002 Microchip Technology Inc.
TC1072/TC1073
5.0
TYPICAL CHARACTERISTICS (CONTINUED)
(Unless Otherwise Specified, All Parts Are Measured At Temperature = 25°C)
Ground Current vs. VIN (VOUT = 3.3V)
80
3
60
2.5
50
VOUT (V)
GND CURRENT (µA)
ILOAD = 0
ILOAD = 150mA
70
VOUT vs. VIN (VOUT = 3.3V)
3.5
40
30
2
1.5
1
20
CIN = 1µF
COUT = 1µF
10
0.5
0
CIN = 1µF
COUT = 1µF
0
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7 7.5
VIN (V)
0.5 1 1.5
2 2.5 3 3.5
4 4.5 5
5.5 6 6.5 7
VIN (V)
VOUT vs. VIN (VOUT = 3.3V)
3.5
3.0
0
Output Voltage vs. Temperature (VOUT = 3.3V)
3.320
ILOAD = 100mA
ILOAD = 10mA
3.315
3.310
3.305
VOUT (V)
VOUT (V)
2.5
2.0
1.5
3.300
3.295
3.290
1.0
3.285
0.5
CIN = 1µF
COUT = 1µF
0.0
0
3.290
3.288
0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7
VIN (V)
CIN = 1µF
COUT = 1µF
VIN = 4.3V
3.280
3.275
-40
-20
-10
0
20
40
85
125
TEMPERATURE (°C)
Output Voltage vs. Temperature (VOUT = 3.3V)
ILOAD = 150mA
VOUT (V)
3.286
3.284
3.282
3.280
3.278
3.276
CIN = 1µF
COUT = 1µF
VIN = 4.3V
3.274
-40
-20
-10
0
20
40
85
125
TEMPERATURE (°C)
 2002 Microchip Technology Inc.
DS21354B-page 9
TC1072/TC1073
5.0
TYPICAL CHARACTERISTICS (CONTINUED)
(Unless Otherwise Specified, All Parts Are Measured At Temperature = 25°C)
Output Voltage vs. Temperature (VOUT = 5V)
5.025
ILOAD = 10mA
4.990
4.988
5.010
4.986
5.005
5.000
4.995
4.990
4.985
4.984
4.982
4.980
4.978
VIN = 6V
CIN = 1µF
COUT = 1µF
-40
ILOAD = 150mA
4.992
5.015
VOUT (V)
VOUT (V)
5.020
Output Voltage vs. Temperature (VOUT = 5V)
4.994
VIN = 6V
CIN = 1µF
COUT = 1µF
4.976
-20
-10
0
20
40
85
4.974
125
-40
-20
-10
TEMPERATURE (°C)
70
50
40
30
20
10
85
50
40
30
20
VIN = 6V
CIN = 1µF
COUT = 1µF
-10
20
40
85
125
Power Supply Rejection Ratio
-30
-35
COUT = 1µF
to 10µF
-40
100
-45
10
1
0
TEMPERATURE (°C)
Stability Region vs. Load Current
RLOAD = 50Ω
COUT = 1µF
CIN = 1µF
CBYP = 0
1.0
-20
125
1000
COUT ESR (Ω)
NOISE (µV/√Hz)
125
ILOAD = 150mA
-40
-10
0
20
40
TEMPERATURE (°C)
Output Noise vs. Frequency
10.0
85
0
0
-20
40
60
10
VIN = 6V
CIN = 1µF
COUT = 1µF
-40
20
Temperature vs. Quiescent Current (VOUT = 5V)
80
ILOAD = 10mA
Stable Region
PSRR (dB)
GND CURRENT (µA)
60
Temperature vs. Quiescent Current (VOUT = 5V)
GND CURRENT (µA)
70
0
TEMPERATURE (°C)
-50
IOUT = 10mA
VINDC = 4V
VINAC = 100mVp-p
VOUT = 3V
CIN = 0
COUT = 1µF
-55
-60
-65
0.1
-70
0.1
-75
0.0
0.01K 0.1K
0.01
1K
10K 100K 1000K
FREQUENCY (Hz)
DS21354B-page 10
0 10 20 30 40 50 60 70 80 90 100
LOAD CURRENT (mA)
-80
0.01K 0.1K
1K
10K 100K 1000K
FREQUENCY (Hz)
 2002 Microchip Technology Inc.
TC1072/TC1073
5.0
TYPICAL CHARACTERISTICS (CONTINUED)
Measure Rise Time of 3.3V LDO with Bypass Capacitor
Measure Rise Time of 3.3V LDO without Bypass Capacitor
Conditions: CIN = 1µF, COUT = 1µF, CBYP = 470pF, ILOAD = 100mA
VIN = 4.3V, Temp = 25°C, Rise Time = 448µS
Conditions: CIN = 1µF, COUT = 1µF, CBYP = 0pF, ILOAD = 100mA
VIN = 4.3V, Temp = 25°C, Rise Time = 184µS
VSHDN
VOUT
VSHDN
VOUT
Measure Fall Time of 3.3V LDO with Bypass Capacitor
Conditions: CIN = 1µF, COUT = 1µF, CBYP = 470pF, ILOAD = 50mA
VIN = 4.3V, Temp = 25°C, Fall Time = 100µS
Measure Fall Time of 3.3V LDO without Bypass Capacitor
Conditions: CIN = 1µF, COUT = 1µF, CBYP = 0pF, ILOAD = 100mA
VIN = 4.3V, Temp = 25°C, Fall Time = 52µS
VSHDN
VSHDN
VOUT
VOUT
 2002 Microchip Technology Inc.
DS21354B-page 11
TC1072/TC1073
5.0
TYPICAL CHARACTERISTICS (CONTINUED)
Measure Rise Time of 5.0V LDO with Bypass Capacitor
Measure Rise Time of 5.0V LDO without Bypass Capacitor
Conditions: CIN = 1µF, COUT = 1µF, CBYP = 470pF, ILOAD = 100mA
VIN = 6V, Temp = 25°C, Rise Time = 390µS
Conditions: CIN = 1µF, COUT = 1µF, CBYP = 0pF, ILOAD = 100mA
VIN = 6V, Temp = 25°C, Rise Time = 192µS
VSHDN
VOUT
Measure Fall Time of 5.0V LDO with Bypass Capacitor
Conditions: CIN = 1µF, COUT = 1µF, CBYP = 470pF, ILOAD = 50mA
VIN = 6V, Temp = 25°C, Fall Time = 167µS
VSHDN
VOUT
DS21354B-page 12
VSHDN
VOUT
Measure Fall Time of 5.0V LDO without Bypass Capacitor
Conditions: CIN = 1µF, COUT = 1µF, CBYP = 0pF, ILOAD = 100mA
VIN = 6V, Temp = 25°C, Fall Time = 88µS
VSHDN
VOUT
 2002 Microchip Technology Inc.
TC1072/TC1073
5.0
TYPICAL CHARACTERISTICS (CONTINUED)
Load Regulation of 3.3V LDO
Load Regulation of 3.3V LDO
Conditions: CIN = 1µF, COUT = 2.2µF, CBYP = 470pF,
VIN = VOUT + 0.25V, Temp = 25°C
Conditions: CIN = 1µF, COUT = 2.2µF, CBYP = 470pF,
VIN = VOUT + 0.25V, Temp = 25°C
ILOAD = 100mA switched in at 10kHz, VOUT is AC coupled
ILOAD = 50mA switched in at 10kHz, VOUT is AC coupled
ILOAD
ILOAD
VOUT
VOUT
Load Regulation of 3.3V LDO
Line Regulation of 3.3V LDO
Conditions: CIN = 1µF, COUT = 2.2µF, CBYP = 470pF,
VIN = VOUT + 0.25V, Temp = 25°C
Conditions: VIN = 4V, + 1V Squarewave @ 2.5kHz
ILOAD = 150mA switched in at 10kHz, VOUT is AC coupled
ILOAD
VOUT
VIN
VOUT
CIN = 0µF, COUT = 1µF, CBYP = 470pF,
ILOAD = 100mA, VIN & VOUT are AC coupled
 2002 Microchip Technology Inc.
DS21354B-page 13
TC1072/TC1073
5.0
TYPICAL CHARACTERISTICS (CONTINUED)
Line Regulation of 5.0V LDO
Thermal Shutdown Response of 5.0V LDO
Conditions: VIN = 6V, + 1V Squarewave @ 2.5kHz
Conditions: VIN = 6V, CIN = 0µF, COUT = 1µF
VIN
VOUT
VOUT
CIN = 0µF, COUT = 1µF, CBYP = 470pF,
ILOAD = 100mA, VIN & VOUT are AC coupled
ILOAD was increased until temperature of die reached about 160°C, at
which time integrated thermal protection circuitry shuts the regulator
off when die temperature exceeds approximately 160°C. The regulator
remains off until die temperature drops to approximately 150°C.
DS21354B-page 14
 2002 Microchip Technology Inc.
TC1072/TC1073
6.0
PACKAGING INFORMATION
6.1
Package Marking Information
“1” & “2” = part number code + temperature range and
voltage
(V)
TC1072
Code
TC1073
Code
2.5
E1
F1
2.7
E2
F2
2.8
EZ
FZ
2.85
E8
F8
3.0
E3
F3
3.3
E5
F5
3.6
E9
F9
4.0
E0
F0
5.0
E7
F7
“3” represents year and quarter code
“4” represents lot ID number
6.2
Taping Form
Component Taping Orientation for 6-Pin SOT-23A (EIAJ SC-74) Devices
User Direction of Feed
Device
Device
Device
Device
Device
Device
Device
Device
Device
Device
Device
Device
Marking
Marking
Marking
Marking
Marking
Marking
Marking
Marking
Marking
Marking
Marking
Marking
W
PIN 1
P
Standard Reel Component Orientation
For TR Suffix Device
(Mark Right Side Up)
Carrier Tape, Number of Components Per Reel and Reel Size
Package
6-Pin SOT-23A
 2002 Microchip Technology Inc.
Carrier Width (W)
Pitch (P)
Part Per Full Reel
Reel Size
8 mm
4 mm
3000
7 in
DS21354B-page 15
TC1072/TC1073
6.3
Package Dimensions
SOT-23A-6
.075 (1.90)
REF.
.069 (1.75)
.059 (1.50)
.122 (3.10)
.098 (2.50)
.020 (0.50)
.014 (0.35)
.037 (0.95)
REF.
.118 (3.00)
.110 (2.80)
.057 (1.45)
.035 (0.90)
.006 (0.15)
.000 (0.00)
.008 (0.20)
.004 (0.09)
10° MAX.
.024 (0.60)
.004 (0.10)
Dimensions: inches (mm)
DS21354B-page 16
 2002 Microchip Technology Inc.
TC1072/TC1073
SALES AND SUPPORT
Data Sheets
Products supported by a preliminary Data Sheet may have an errata sheet describing minor operational differences and recommended workarounds. To determine if an errata sheet exists for a particular device, please contact one of the following:
1.
2.
3.
Your local Microchip sales office
The Microchip Corporate Literature Center U.S. FAX: (480) 792-7277
The Microchip Worldwide Site (www.microchip.com)
Please specify which device, revision of silicon and Data Sheet (include Literature #) you are using.
New Customer Notification System
Register on our web site (www.microchip.com/cn) to receive the most current information on our products.
 2002 Microchip Technology Inc.
DS21354B-page 17
TC1072/TC1073
NOTES:
DS21354B-page 18
 2002 Microchip Technology Inc.
TC1072/TC1073
Information contained in this publication regarding device
applications and the like is intended through suggestion only
and may be superseded by updates. It is your responsibility to
ensure that your application meets with your specifications.
No representation or warranty is given and no liability is
assumed by Microchip Technology Incorporated with respect
to the accuracy or use of such information, or infringement of
patents or other intellectual property rights arising from such
use or otherwise. Use of Microchip’s products as critical components in life support systems is not authorized except with
express written approval by Microchip. No licenses are conveyed, implicitly or otherwise, under any intellectual property
rights.
Trademarks
The Microchip name and logo, the Microchip logo, FilterLab,
KEELOQ, microID, MPLAB, PIC, PICmicro, PICMASTER,
PICSTART, PRO MATE, SEEVAL and The Embedded Control
Solutions Company are registered trademarks of Microchip Technology Incorporated in the U.S.A. and other countries.
dsPIC, ECONOMONITOR, FanSense, FlexROM, fuzzyLAB,
In-Circuit Serial Programming, ICSP, ICEPIC, microPort,
Migratable Memory, MPASM, MPLIB, MPLINK, MPSIM,
MXDEV, MXLAB, PICC, PICDEM, PICDEM.net, rfPIC, Select
Mode and Total Endurance are trademarks of Microchip
Technology Incorporated in the U.S.A.
Serialized Quick Turn Programming (SQTP) is a service mark
of Microchip Technology Incorporated in the U.S.A.
All other trademarks mentioned herein are property of their
respective companies.
© 2002, Microchip Technology Incorporated, Printed in the
U.S.A., All Rights Reserved.
Printed on recycled paper.
Microchip received QS-9000 quality system
certification for its worldwide headquarters,
design and wafer fabrication facilities in
Chandler and Tempe, Arizona in July 1999
and Mountain View, California in March 2002.
The Company’s quality system processes and
procedures are QS-9000 compliant for its
PICmicro ® 8-bit MCUs, KEELOQ® code hopping
devices, Serial EEPROMs, microperipherals,
non-volatile memory and analog products. In
addition, Microchip’s quality system for the
design and manufacture of development
systems is ISO 9001 certified.
 2002 Microchip Technology Inc.
DS21354B-page 19
WORLDWIDE SALES AND SERVICE
AMERICAS
ASIA/PACIFIC
Japan
Corporate Office
Australia
2355 West Chandler Blvd.
Chandler, AZ 85224-6199
Tel: 480-792-7200 Fax: 480-792-7277
Technical Support: 480-792-7627
Web Address: http://www.microchip.com
Microchip Technology Australia Pty Ltd
Suite 22, 41 Rawson Street
Epping 2121, NSW
Australia
Tel: 61-2-9868-6733 Fax: 61-2-9868-6755
Microchip Technology Japan K.K.
Benex S-1 6F
3-18-20, Shinyokohama
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Kanagawa, 222-0033, Japan
Tel: 81-45-471- 6166 Fax: 81-45-471-6122
Rocky Mountain
China - Beijing
2355 West Chandler Blvd.
Chandler, AZ 85224-6199
Tel: 480-792-7966 Fax: 480-792-7456
Microchip Technology Consulting (Shanghai)
Co., Ltd., Beijing Liaison Office
Unit 915
Bei Hai Wan Tai Bldg.
No. 6 Chaoyangmen Beidajie
Beijing, 100027, No. China
Tel: 86-10-85282100 Fax: 86-10-85282104
Atlanta
500 Sugar Mill Road, Suite 200B
Atlanta, GA 30350
Tel: 770-640-0034 Fax: 770-640-0307
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2 Lan Drive, Suite 120
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Tel: 978-692-3848 Fax: 978-692-3821
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333 Pierce Road, Suite 180
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Tel: 630-285-0071 Fax: 630-285-0075
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Tel: 86-28-86766200 Fax: 86-28-86766599
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Unit 28F, World Trade Plaza
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#07-02 Prime Centre
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Taiwan
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EUROPE
Denmark
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Tel: 45 4420 9895 Fax: 45 4420 9910
France
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Parc d’Activite du Moulin de Massy
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Germany
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Tel: 49-89-627-144 0 Fax: 49-89-627-144-44
Italy
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Tel: 39-039-65791-1 Fax: 39-039-6899883
United Kingdom
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Berkshire, England RG41 5TU
Tel: 44 118 921 5869 Fax: 44-118 921-5820
05/01/02
*DS21354B*
DS21354B-page 20
 2002 Microchip Technology Inc.