TC1072/TC1073 50mA and 100mA CMOS LDOs with Shutdown, ERROR Output and VREF Bypass Features • Zero Ground Current for Longer Battery Life • Very Low Dropout Voltage • Choice of 50mA (TC1072) and 100mA (TC1073) Output • High Output Voltage Accuracy • Standard or Custom Output Voltages • Power-Saving Shutdown Mode • ERROR Output Can Be Used as a Low Battery Detector or Processor Reset Generator • Bypass Input for Ultra Quiet Operation • Over Current and Over Temperature Protection • Space-Saving 6-Pin SOT-23A Package • Pin Compatible Upgrades for Bipolar Regulators Applications • • • • • • • Battery Operated Systems Portable Computers Medical Instruments Instrumentation Cellular/GSM/PHS Phones Linear Post-Regulators for SMPS Pagers Device Selection Table Part Number Package Junction Temp. Range TC1072-xxVCH 6-Pin SOT-23A -40°C to +125°C TC1073-xxVCH 6-Pin SOT-23A -40°C to +125°C NOTE: xx indicates output voltages Available Output Voltages: 2.5, 2.7, 2.8, 2.85, 3.0, 3.3, 3.6, 4.0, 5.0. Other output voltages are available. Please contact Microchip Technology Inc. for details. Package Type 6-Pin SOT-23A VOUT Bypass ERROR 6 4 5 TC1072 TC1073 1 2 3 VIN GND SHDN NOTE: 6-Pin SOT-23A is equivalent to the EIAJ (SC-74A) 2002 Microchip Technology Inc. DS21354B-page 1 TC1072/TC1073 General Description The TC1072 and TC1073 are high accuracy (typically ±0.5%) CMOS upgrades for older (bipolar) low dropout regulators. Designed specifically for battery-operated systems, the devices’ CMOS construction eliminates wasted ground current, significantly extending battery life. Total supply current is typically 50µA at full load (20 to 60 times lower than in bipolar regulators). The devices’ key features include ultra low noise operation (plus optional Bypass input); very low dropout voltage (typically 85mV, TC1072 and 180mV, TC1073 at full load) and fast response to step changes in load. An error output (ERROR) is asserted when the devices are out-of-regulation (due to a low input voltage or excessive output current). ERROR can be used as a low battery warning or as a processor RESET signal (with the addition of an external RC network). Supply current is reduced to 0.5µA (max) and both VOUT and ERROR are disabled when the shutdown input is low. The devices incorporate both over-temperature and over-current protection. Typical Application RP VIN 1 VIN VOUT 6 TC1072 TC1073 2 GND Bypass VOUT + 1µF 5 CBYPASS 470pF 3 4 SHDN ERROR ERROR Shutdown Control (from Power Control Logic) The TC1072 and TC1073 are stable with an output capacitor of only 1µF and have a maximum output current of 50mA, and 100mA respectively. For higher output current versions, please see the TC1185, TC1186, TC1187 (IOUT = 150mA) and TC1107, TC1108 and TC1173 (IOUT = 300mA) data sheets. DS21354B-page 2 2002 Microchip Technology Inc. TC1072/TC1073 1.0 ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings* Input Voltage......................................................... 6.5V Output Voltage ...........................(-0.3V) to (VIN + 0.3V) Power Dissipation ............... Internally Limited (Note 6) Maximum Voltage on Any Pin ........ VIN +0.3V to -0.3V Operating Temperature Range ......-40°C < TJ < 125°C Storage Temperature ......................... -65°C to +150°C *Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions above those indicated in the operation sections of the specifications is not implied. Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability. TC1072/TC1073 ELECTRICAL SPECIFICATIONS Electrical Characteristics: VIN = VOUT + 1V, IL = 0.1mA, CL = 3.3µF, SHDN > VIH, TA = 25°C, unless otherwise noted. Boldface type specifications apply for junction temperatures of -40°C to +125°C. Symbol Parameter Min Typ Max V IN Input Operating Voltage 2.7 — 6.0 V Note 9 IOUTMAX Maximum Output Current 50 100 — — — — mA mA TC1072 TC1073 V Note 1 ppm/°C Note 2 V OUT Output Voltage TCVOUT VOUT Temperature Coefficient VR – 2.5% VR ±0.5% VR + 2.5% — — 20 40 — — Units Test Conditions ∆VOUT/∆VIN Line Regulation — 0.05 0.35 % (VR + 1V) ≤ VIN ≤ 6V ∆VOUT/VOUT Load Regulation — 0.5 2.0 % IL = 0.1mA to IOUTMAX (Note 3) V IN-V OUT Dropout Voltage — — — — 2 65 85 180 — — 120 250 mV IL = 0.1mA IL = 20mA IL = 50mA IL = 100mA (Note 4), TC1073 IIN Supply Current — 50 80 µA SHDN = VIH, IL = 0 (Note 8) IINSD Shutdown Supply Current — 0.05 0.5 µA SHDN = 0V PSRR Power Supply Rejection Ratio — 64 — dB FRE ≤ 1kHz IOUTSC Output Short Circuit Current — 300 450 mA VOUT = 0V ∆VOUT/∆PD Thermal Regulation — 0.04 — V/W Notes 5, 6 TSD Thermal Shutdown Die Temperature — 160 — °C ∆TSD Thermal Shutdown Hysteresis — 10 — °C eN Output Noise — 260 — nV/√Hz VIH SHDN Input High Threshold 45 — — %VIN VIN = 2.5V to 6.5V V IL SHDN Input Low Threshold — — 15 %VIN VIN = 2.5V to 6.5V IL = IOUT MAX 470pF from Bypass to GND SHDN Input Note 1: 2: 3: 4: 5: 6: 7: 8: 9: VR is the regulator output voltage setting. For example: VR = 2.5V, 2.7V, 2.85V, 3.0V, 3.3V, 3.6V, 4.0V, 5.0V. TC VOUT = (VOUTMAX – VOUTMIN) x 10 6 VOUT x ∆T Regulation is measured at a constant junction temperature using low duty cycle pulse testing. Load regulation is tested over a load range from 0.1mA to the maximum specified output current. Changes in output voltage due to heating effects are covered by the thermal regulation specification. Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its nominal value. Thermal Regulation is defined as the change in output voltage at a time T after a change in power dissipation is applied, excluding load or line regulation effects. Specifications are for a current pulse equal to ILMAX at VIN = 6V for T = 10 msec. The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction temperature and the thermal resistance from junction-to-air (i.e., TA, TJ, θJA). Exceeding the maximum allowable power dissipation causes the device to initiate thermal shutdown. Please see Section 4.0 Thermal Considerations for more details. Hysteresis voltage is referenced by VR. Apply for Junction Temperatures of -40°C to +85°C. The minimum VIN has to justify the conditions = VIN ≥ VR + VDROPOUT and VIN ≥ 2.7V for I L = 0.1mA to IOUT MAX. 2002 Microchip Technology Inc. DS21354B-page 3 TC1072/TC1073 TC1072/TC1073 ELECTRICAL SPECIFICATIONS (CONTINUED) Electrical Characteristics: VIN = VOUT + 1V, IL = 0.1mA, CL = 3.3µF, SHDN > VIH , TA = 25°C, unless otherwise noted. Boldface type specifications apply for junction temperatures of -40°C to +125°C. Symbol Parameter Min Typ Max Units — — V Test Conditions ERROR Open Drain Output VIN MIN Minimum VIN Operating Voltage 1.0 VOL Output Logic Low Voltage — — 400 mV VTH ERROR Threshold Voltage — 0.95 x VR — V ERROR Positive Hysteresis — 50 — mV VHYS Note 1: 2: 3: 4: 5: 6: 7: 8: 9: 1 mA Flows to ERROR See Figure 3-2 Note 7 VR is the regulator output voltage setting. For example: VR = 2.5V, 2.7V, 2.85V, 3.0V, 3.3V, 3.6V, 4.0V, 5.0V. TC VOUT = (VOUTMAX – VOUTMIN ) x 10 6 VOUT x ∆T Regulation is measured at a constant junction temperature using low duty cycle pulse testing. Load regulation is tested over a load range from 0.1mA to the maximum specified output current. Changes in output voltage due to heating effects are covered by the thermal regulation specification. Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its nominal value. Thermal Regulation is defined as the change in output voltage at a time T after a change in power dissipation is applied, excluding load or line regulation effects. Specifications are for a current pulse equal to ILMAX at VIN = 6V for T = 10 msec. The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction temperature and the thermal resistance from junction-to-air (i.e., TA, TJ, θ JA). Exceeding the maximum allowable power dissipation causes the device to initiate thermal shutdown. Please see Section 4.0 Thermal Considerations for more details. Hysteresis voltage is referenced by VR. Apply for Junction Temperatures of -40°C to +85°C. The minimum VIN has to justify the conditions = VIN ≥ VR + VDROPOUT and VIN ≥ 2.7V for IL = 0.1mA to IOUTMAX . DS21354B-page 4 2002 Microchip Technology Inc. TC1072/TC1073 2.0 PIN DESCRIPTIONS The descriptions of the pins are listed in Table 2-1. TABLE 2-1: PIN FUNCTION TABLE Pin No. (6-Pin SOT-23A) Symbol 1 VIN 2 GND 3 SHDN 4 ERROR 5 Bypass 6 VOUT 2002 Microchip Technology Inc. Description Unregulated supply input. Ground terminal. Shutdown control input. The regulator is fully enabled when a logic high is applied to this input. The regulator enters shutdown when a logic low is applied to this input. During shutdown, output voltage falls to zero and supply current is reduced to 0.05µA (typical). Out-of-Regulation Flag. (Open drain output). This output goes low when VOUT is out-oftolerance by approximately – 5%. Reference bypass input. Connecting a 470pF to this input further reduces output noise. Regulated voltage output. DS21354B-page 5 TC1072/TC1073 3.0 DETAILED DESCRIPTION The TC1072 and TC1073 are precision fixed output voltage regulators. (If an adjustable version is desired, please see the TC1070/TC1071/TC1187 data sheet.) Unlike bipolar regulators, the TC1072 and TC1073’s supply current does not increase with load current. In addition, VOUT remains stable and within regulation over the entire 0mA to IOUTMAX load current range, (an important consideration in RTC and CMOS RAM battery back-up applications). Figure 3-1 shows a typical application circuit. The regulator is enabled any time the shutdown input (SHDN) is at or above VIH, and shutdown (disabled) when SHDN is at or below VIL. SHDN may be controlled by a CMOS logic gate, or I/O port of a microcontroller. If the SHDN input is not required, it should be connected directly to the input supply. While in shutdown, supply current decreases to 0.05µA (typical), VOUT falls to zero volts, and ERROR is opencircuited. FIGURE 3-1: TYPICAL APPLICATION CIRCUIT VIN + 1µF + VOUT TC1072 TC1073 VOUT + 1µF C1 Battery GND Bypass C3, 470pF V+ SHDN Shutdown Control (to CMOS Logic or Tie to VIN if unused) 3.1 R1 1M BATTLOW or RESET 0.2µF C2 ERROR Open Drain Output ERROR OUTPUT OPERATION VOUT HYSTERESIS (VH) VTH ERROR VIH VOL 3.2 Output Capacitor A 1µF (min) capacitor from VOUT to ground is recommended. The output capacitor should have an effective series resistance greater than 0.1Ω and less than 5.0Ω, and a resonant frequency above 1MHz. A 1µF capacitor should be connected from V IN to GND if there is more than 10 inches of wire between the regulator and the AC filter capacitor, or if a battery is used as the power source. Aluminum electrolytic or tantalum capacitor types can be used. (Since many aluminum electrolytic capacitors freeze at approximately -30°C, solid tantalums are recommended for applications operating below -25°C.) When operating from sources other than batteries, supply-noise rejection and transient response can be improved by increasing the value of the input and output capacitors and employing passive filtering techniques. 3.3 ERROR C2 Required Only if ERROR is used as a Processor RESET Signal (See Text) FIGURE 3-2: Bypass Input A 470pF capacitor connected from the Bypass input to ground reduces noise present on the internal reference, which in turn significantly reduces output noise. If output noise is not a concern, this input may be left unconnected. Larger capacitor values may be used, but results in a longer time period to rated output voltage when power is initially applied. ERROR is driven low whenever VOUT falls out of regulation by more than – 5% (typical). This condition may be caused by low input voltage, output current limiting, or thermal limiting. The ERROR output voltage value (e.g. ERROR = VOL at 4.75V (typ.) for a 5.0V regulator and 2.85V (typ.) for a 3.0V regulator). ERROR output operation is shown in Figure 3-2. Note that ERROR is active when V OUT falls to VTH, and inactive when VOUT rises above VTH by VHYS. As shown in Figure 3-1, ERROR can be used as a battery low flag, or as a processor RESET signal (with the addition of timing capacitor C2). R1 x C2 should be chosen to maintain ERROR below VIH of the processor RESET input for at least 200 msec to allow time for the system to stabilize. Pull-up resistor R1 can be tied to VOUT, VIN or any other voltage less than (VIN + 0.3V). DS21354B-page 6 2002 Microchip Technology Inc. TC1072/TC1073 4.0 THERMAL CONSIDERATIONS 4.1 Thermal Shutdown Integrated thermal protection circuitry shuts the regulator off when die temperature exceeds 160°C. The regulator remains off until the die temperature drops to approximately 150°C. 4.2 Equation 4-1 can be used in conjunction with Equation 4-2 to ensure regulator thermal operation is within limits. For example: Given: VINMAX VOUTMIN = 2.7V – 2.5% ILOADMAX = 40mA Power Dissipation The amount of power the regulator dissipates is primarily a function of input and output voltage, and output current. The following equation is used to calculate worst case actual power dissipation: EQUATION 4-1: PD ≈ (VINMAX – V OUTMIN)ILOADMAX Where: PD VINMAX VOUTMIN ILOAD MAX = 3.0V ±5% TJMAX = 125°C TAMAX = 55°C Find: 1. Actual power dissipation 2. Maximum allowable dissipation Actual power dissipation: PD ≈ (VINMAX – VOUTMIN)ILOADMAX = [(3.0 x 1.05) – (2.7 x .975)]40 x 10–3 = 20.7mW Maximum allowable power dissipation: = Worst case actual power dissipation = Maximum voltage on VIN = Minimum regulator output voltage = Maximum output (load) current PDMAX = (TJMAX – TAMAX) θJA = (125 – 55) 220 = 318mW The maximum allowable power dissipation (Equation 4-2) is a function of the maximum ambient temperature (TAMAX), the maximum allowable die temperature (TJMAX) and the thermal resistance from junction-to-air (θJA). The 6-Pin SOT-23A package has a θJA of approximately 220°C/Watt. In this example, the TC1072 dissipates a maximum of 20.7mW; below the allowable limit of 318mW. In a similar manner, Equation 4-1 and Equation 4-2 can be used to calculate maximum current and/or input voltage limits. EQUATION 4-2: 4.3 PDMAX= (TJMAX – TAMAX) θJA Where all terms are previously defined. 2002 Microchip Technology Inc. Layout Considerations The primary path of heat conduction out of the package is via the package leads. Therefore, layouts having a ground plane, wide traces at the pads, and wide power supply bus lines combine to lower θJA and therefore increase the maximum allowable power dissipation limit. DS21354B-page 7 TC1072/TC1073 5.0 TYPICAL CHARACTERISTICS (Unless Otherwise Specified, All Parts Are Measured At Temperature = 25°C) The graphs and tables provided following this note are a statistical summary based on a limited number of samples and are provided for informational purposes only. The performance characteristics listed herein are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified operating range (e.g., outside specified power supply range) and therefore outside the warranted range. 0.020 DROPOUT VOLTAGE (V) 0.018 Dropout Voltage vs. Temperature (VOUT = 3.3V) ILOAD = 10mA 0.090 0.016 0.014 0.012 0.010 0.008 0.006 0.004 0.002 0.100 DROPOUT VOLTAGE (V) Note: CIN = 1µF COUT = 1µF -40 0.200 0 20 50 TEMPERATURE (°C) 70 0.060 0.050 0.040 0.030 0.020 Dropout Voltage vs. Temperature (VOUT = 3.3V) 0.300 ILOAD = 100mA 0.120 0.100 0.080 0.060 0.040 CIN = 1µF COUT = 1µF 0.000 0 20 50 TEMPERATURE (°C) 70 125 Dropout Voltage vs. Temperature (VOUT = 3.3V) 0.250 0.200 0.150 0.100 0.050 CIN = 1µF COUT = 1µF 0.000 -40 -20 0 20 50 70 125 -40 TEMPERATURE (°C) Ground Current vs. VIN (VOUT = 3.3V) 90 ILOAD = 10mA 80 70 60 50 40 30 20 CIN = 1µF COUT = 1µF 10 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7 7.5 VIN (V) DS21354B-page 8 -20 0 20 50 TEMPERATURE (°C) 70 125 Ground Current vs. VIN (VOUT = 3.3V) ILOAD = 100mA 80 GND CURRENT (µA) GND CURRENT (µA) -20 ILOAD = 150mA 0.140 90 CIN = 1µF COUT = 1µF -40 0.160 0.020 0.070 0.000 125 DROPOUT VOLTAGE (V) DROPOUT VOLTAGE (V) 0.180 -20 ILOAD = 50mA 0.080 0.010 0.000 Dropout Voltage vs. Temperature (VOUT = 3.3V) 70 60 50 40 30 20 CIN = 1µF COUT = 1µF 10 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7 7.5 VIN (V) 2002 Microchip Technology Inc. TC1072/TC1073 5.0 TYPICAL CHARACTERISTICS (CONTINUED) (Unless Otherwise Specified, All Parts Are Measured At Temperature = 25°C) Ground Current vs. VIN (VOUT = 3.3V) 80 3 60 2.5 50 VOUT (V) GND CURRENT (µA) ILOAD = 0 ILOAD = 150mA 70 VOUT vs. VIN (VOUT = 3.3V) 3.5 40 30 2 1.5 1 20 CIN = 1µF COUT = 1µF 10 0.5 0 CIN = 1µF COUT = 1µF 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7 7.5 VIN (V) 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7 VIN (V) VOUT vs. VIN (VOUT = 3.3V) 3.5 3.0 0 Output Voltage vs. Temperature (VOUT = 3.3V) 3.320 ILOAD = 100mA ILOAD = 10mA 3.315 3.310 3.305 VOUT (V) VOUT (V) 2.5 2.0 1.5 3.300 3.295 3.290 1.0 3.285 0.5 CIN = 1µF COUT = 1µF 0.0 0 3.290 3.288 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7 VIN (V) CIN = 1µF COUT = 1µF VIN = 4.3V 3.280 3.275 -40 -20 -10 0 20 40 85 125 TEMPERATURE (°C) Output Voltage vs. Temperature (VOUT = 3.3V) ILOAD = 150mA VOUT (V) 3.286 3.284 3.282 3.280 3.278 3.276 CIN = 1µF COUT = 1µF VIN = 4.3V 3.274 -40 -20 -10 0 20 40 85 125 TEMPERATURE (°C) 2002 Microchip Technology Inc. DS21354B-page 9 TC1072/TC1073 5.0 TYPICAL CHARACTERISTICS (CONTINUED) (Unless Otherwise Specified, All Parts Are Measured At Temperature = 25°C) Output Voltage vs. Temperature (VOUT = 5V) 5.025 ILOAD = 10mA 4.990 4.988 5.010 4.986 5.005 5.000 4.995 4.990 4.985 4.984 4.982 4.980 4.978 VIN = 6V CIN = 1µF COUT = 1µF -40 ILOAD = 150mA 4.992 5.015 VOUT (V) VOUT (V) 5.020 Output Voltage vs. Temperature (VOUT = 5V) 4.994 VIN = 6V CIN = 1µF COUT = 1µF 4.976 -20 -10 0 20 40 85 4.974 125 -40 -20 -10 TEMPERATURE (°C) 70 50 40 30 20 10 85 50 40 30 20 VIN = 6V CIN = 1µF COUT = 1µF -10 20 40 85 125 Power Supply Rejection Ratio -30 -35 COUT = 1µF to 10µF -40 100 -45 10 1 0 TEMPERATURE (°C) Stability Region vs. Load Current RLOAD = 50Ω COUT = 1µF CIN = 1µF CBYP = 0 1.0 -20 125 1000 COUT ESR (Ω) NOISE (µV/√Hz) 125 ILOAD = 150mA -40 -10 0 20 40 TEMPERATURE (°C) Output Noise vs. Frequency 10.0 85 0 0 -20 40 60 10 VIN = 6V CIN = 1µF COUT = 1µF -40 20 Temperature vs. Quiescent Current (VOUT = 5V) 80 ILOAD = 10mA Stable Region PSRR (dB) GND CURRENT (µA) 60 Temperature vs. Quiescent Current (VOUT = 5V) GND CURRENT (µA) 70 0 TEMPERATURE (°C) -50 IOUT = 10mA VINDC = 4V VINAC = 100mVp-p VOUT = 3V CIN = 0 COUT = 1µF -55 -60 -65 0.1 -70 0.1 -75 0.0 0.01K 0.1K 0.01 1K 10K 100K 1000K FREQUENCY (Hz) DS21354B-page 10 0 10 20 30 40 50 60 70 80 90 100 LOAD CURRENT (mA) -80 0.01K 0.1K 1K 10K 100K 1000K FREQUENCY (Hz) 2002 Microchip Technology Inc. TC1072/TC1073 5.0 TYPICAL CHARACTERISTICS (CONTINUED) Measure Rise Time of 3.3V LDO with Bypass Capacitor Measure Rise Time of 3.3V LDO without Bypass Capacitor Conditions: CIN = 1µF, COUT = 1µF, CBYP = 470pF, ILOAD = 100mA VIN = 4.3V, Temp = 25°C, Rise Time = 448µS Conditions: CIN = 1µF, COUT = 1µF, CBYP = 0pF, ILOAD = 100mA VIN = 4.3V, Temp = 25°C, Rise Time = 184µS VSHDN VOUT VSHDN VOUT Measure Fall Time of 3.3V LDO with Bypass Capacitor Conditions: CIN = 1µF, COUT = 1µF, CBYP = 470pF, ILOAD = 50mA VIN = 4.3V, Temp = 25°C, Fall Time = 100µS Measure Fall Time of 3.3V LDO without Bypass Capacitor Conditions: CIN = 1µF, COUT = 1µF, CBYP = 0pF, ILOAD = 100mA VIN = 4.3V, Temp = 25°C, Fall Time = 52µS VSHDN VSHDN VOUT VOUT 2002 Microchip Technology Inc. DS21354B-page 11 TC1072/TC1073 5.0 TYPICAL CHARACTERISTICS (CONTINUED) Measure Rise Time of 5.0V LDO with Bypass Capacitor Measure Rise Time of 5.0V LDO without Bypass Capacitor Conditions: CIN = 1µF, COUT = 1µF, CBYP = 470pF, ILOAD = 100mA VIN = 6V, Temp = 25°C, Rise Time = 390µS Conditions: CIN = 1µF, COUT = 1µF, CBYP = 0pF, ILOAD = 100mA VIN = 6V, Temp = 25°C, Rise Time = 192µS VSHDN VOUT Measure Fall Time of 5.0V LDO with Bypass Capacitor Conditions: CIN = 1µF, COUT = 1µF, CBYP = 470pF, ILOAD = 50mA VIN = 6V, Temp = 25°C, Fall Time = 167µS VSHDN VOUT DS21354B-page 12 VSHDN VOUT Measure Fall Time of 5.0V LDO without Bypass Capacitor Conditions: CIN = 1µF, COUT = 1µF, CBYP = 0pF, ILOAD = 100mA VIN = 6V, Temp = 25°C, Fall Time = 88µS VSHDN VOUT 2002 Microchip Technology Inc. TC1072/TC1073 5.0 TYPICAL CHARACTERISTICS (CONTINUED) Load Regulation of 3.3V LDO Load Regulation of 3.3V LDO Conditions: CIN = 1µF, COUT = 2.2µF, CBYP = 470pF, VIN = VOUT + 0.25V, Temp = 25°C Conditions: CIN = 1µF, COUT = 2.2µF, CBYP = 470pF, VIN = VOUT + 0.25V, Temp = 25°C ILOAD = 100mA switched in at 10kHz, VOUT is AC coupled ILOAD = 50mA switched in at 10kHz, VOUT is AC coupled ILOAD ILOAD VOUT VOUT Load Regulation of 3.3V LDO Line Regulation of 3.3V LDO Conditions: CIN = 1µF, COUT = 2.2µF, CBYP = 470pF, VIN = VOUT + 0.25V, Temp = 25°C Conditions: VIN = 4V, + 1V Squarewave @ 2.5kHz ILOAD = 150mA switched in at 10kHz, VOUT is AC coupled ILOAD VOUT VIN VOUT CIN = 0µF, COUT = 1µF, CBYP = 470pF, ILOAD = 100mA, VIN & VOUT are AC coupled 2002 Microchip Technology Inc. DS21354B-page 13 TC1072/TC1073 5.0 TYPICAL CHARACTERISTICS (CONTINUED) Line Regulation of 5.0V LDO Thermal Shutdown Response of 5.0V LDO Conditions: VIN = 6V, + 1V Squarewave @ 2.5kHz Conditions: VIN = 6V, CIN = 0µF, COUT = 1µF VIN VOUT VOUT CIN = 0µF, COUT = 1µF, CBYP = 470pF, ILOAD = 100mA, VIN & VOUT are AC coupled ILOAD was increased until temperature of die reached about 160°C, at which time integrated thermal protection circuitry shuts the regulator off when die temperature exceeds approximately 160°C. The regulator remains off until die temperature drops to approximately 150°C. DS21354B-page 14 2002 Microchip Technology Inc. TC1072/TC1073 6.0 PACKAGING INFORMATION 6.1 Package Marking Information “1” & “2” = part number code + temperature range and voltage (V) TC1072 Code TC1073 Code 2.5 E1 F1 2.7 E2 F2 2.8 EZ FZ 2.85 E8 F8 3.0 E3 F3 3.3 E5 F5 3.6 E9 F9 4.0 E0 F0 5.0 E7 F7 “3” represents year and quarter code “4” represents lot ID number 6.2 Taping Form Component Taping Orientation for 6-Pin SOT-23A (EIAJ SC-74) Devices User Direction of Feed Device Device Device Device Device Device Device Device Device Device Device Device Marking Marking Marking Marking Marking Marking Marking Marking Marking Marking Marking Marking W PIN 1 P Standard Reel Component Orientation For TR Suffix Device (Mark Right Side Up) Carrier Tape, Number of Components Per Reel and Reel Size Package 6-Pin SOT-23A 2002 Microchip Technology Inc. Carrier Width (W) Pitch (P) Part Per Full Reel Reel Size 8 mm 4 mm 3000 7 in DS21354B-page 15 TC1072/TC1073 6.3 Package Dimensions SOT-23A-6 .075 (1.90) REF. .069 (1.75) .059 (1.50) .122 (3.10) .098 (2.50) .020 (0.50) .014 (0.35) .037 (0.95) REF. .118 (3.00) .110 (2.80) .057 (1.45) .035 (0.90) .006 (0.15) .000 (0.00) .008 (0.20) .004 (0.09) 10° MAX. .024 (0.60) .004 (0.10) Dimensions: inches (mm) DS21354B-page 16 2002 Microchip Technology Inc. TC1072/TC1073 SALES AND SUPPORT Data Sheets Products supported by a preliminary Data Sheet may have an errata sheet describing minor operational differences and recommended workarounds. To determine if an errata sheet exists for a particular device, please contact one of the following: 1. 2. 3. Your local Microchip sales office The Microchip Corporate Literature Center U.S. FAX: (480) 792-7277 The Microchip Worldwide Site (www.microchip.com) Please specify which device, revision of silicon and Data Sheet (include Literature #) you are using. New Customer Notification System Register on our web site (www.microchip.com/cn) to receive the most current information on our products. 2002 Microchip Technology Inc. DS21354B-page 17 TC1072/TC1073 NOTES: DS21354B-page 18 2002 Microchip Technology Inc. TC1072/TC1073 Information contained in this publication regarding device applications and the like is intended through suggestion only and may be superseded by updates. It is your responsibility to ensure that your application meets with your specifications. No representation or warranty is given and no liability is assumed by Microchip Technology Incorporated with respect to the accuracy or use of such information, or infringement of patents or other intellectual property rights arising from such use or otherwise. Use of Microchip’s products as critical components in life support systems is not authorized except with express written approval by Microchip. No licenses are conveyed, implicitly or otherwise, under any intellectual property rights. Trademarks The Microchip name and logo, the Microchip logo, FilterLab, KEELOQ, microID, MPLAB, PIC, PICmicro, PICMASTER, PICSTART, PRO MATE, SEEVAL and The Embedded Control Solutions Company are registered trademarks of Microchip Technology Incorporated in the U.S.A. and other countries. dsPIC, ECONOMONITOR, FanSense, FlexROM, fuzzyLAB, In-Circuit Serial Programming, ICSP, ICEPIC, microPort, Migratable Memory, MPASM, MPLIB, MPLINK, MPSIM, MXDEV, MXLAB, PICC, PICDEM, PICDEM.net, rfPIC, Select Mode and Total Endurance are trademarks of Microchip Technology Incorporated in the U.S.A. Serialized Quick Turn Programming (SQTP) is a service mark of Microchip Technology Incorporated in the U.S.A. All other trademarks mentioned herein are property of their respective companies. © 2002, Microchip Technology Incorporated, Printed in the U.S.A., All Rights Reserved. Printed on recycled paper. Microchip received QS-9000 quality system certification for its worldwide headquarters, design and wafer fabrication facilities in Chandler and Tempe, Arizona in July 1999 and Mountain View, California in March 2002. The Company’s quality system processes and procedures are QS-9000 compliant for its PICmicro ® 8-bit MCUs, KEELOQ® code hopping devices, Serial EEPROMs, microperipherals, non-volatile memory and analog products. In addition, Microchip’s quality system for the design and manufacture of development systems is ISO 9001 certified. 2002 Microchip Technology Inc. DS21354B-page 19 WORLDWIDE SALES AND SERVICE AMERICAS ASIA/PACIFIC Japan Corporate Office Australia 2355 West Chandler Blvd. Chandler, AZ 85224-6199 Tel: 480-792-7200 Fax: 480-792-7277 Technical Support: 480-792-7627 Web Address: http://www.microchip.com Microchip Technology Australia Pty Ltd Suite 22, 41 Rawson Street Epping 2121, NSW Australia Tel: 61-2-9868-6733 Fax: 61-2-9868-6755 Microchip Technology Japan K.K. Benex S-1 6F 3-18-20, Shinyokohama Kohoku-Ku, Yokohama-shi Kanagawa, 222-0033, Japan Tel: 81-45-471- 6166 Fax: 81-45-471-6122 Rocky Mountain China - Beijing 2355 West Chandler Blvd. Chandler, AZ 85224-6199 Tel: 480-792-7966 Fax: 480-792-7456 Microchip Technology Consulting (Shanghai) Co., Ltd., Beijing Liaison Office Unit 915 Bei Hai Wan Tai Bldg. No. 6 Chaoyangmen Beidajie Beijing, 100027, No. China Tel: 86-10-85282100 Fax: 86-10-85282104 Atlanta 500 Sugar Mill Road, Suite 200B Atlanta, GA 30350 Tel: 770-640-0034 Fax: 770-640-0307 Boston 2 Lan Drive, Suite 120 Westford, MA 01886 Tel: 978-692-3848 Fax: 978-692-3821 Chicago 333 Pierce Road, Suite 180 Itasca, IL 60143 Tel: 630-285-0071 Fax: 630-285-0075 Dallas 4570 Westgrove Drive, Suite 160 Addison, TX 75001 Tel: 972-818-7423 Fax: 972-818-2924 Detroit Tri-Atria Office Building 32255 Northwestern Highway, Suite 190 Farmington Hills, MI 48334 Tel: 248-538-2250 Fax: 248-538-2260 Kokomo 2767 S. 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Le Colleoni 1 20041 Agrate Brianza Milan, Italy Tel: 39-039-65791-1 Fax: 39-039-6899883 United Kingdom Microchip Ltd. 505 Eskdale Road Winnersh Triangle Wokingham Berkshire, England RG41 5TU Tel: 44 118 921 5869 Fax: 44-118 921-5820 05/01/02 *DS21354B* DS21354B-page 20 2002 Microchip Technology Inc.