TC1014/TC1015/TC1185 50 mA, 100 mA and 150 mA CMOS LDOs with Shutdown and Reference Bypass Features: General Description • Low Supply Current (50 µA, typical) • Low Dropout Voltage • Choice of 50 mA (TC1014), 100 mA (TC1015) and 150 mA (TC1185) Output • High Output Voltage Accuracy • Standard or Custom Output Voltages • Power-Saving Shutdown Mode • Reference Bypass Input for Ultra Low-Noise Operation • Overcurrent and Overtemperature Protection • Space-Saving 5-Pin SOT-23 Package • Pin-Compatible Upgrades for Bipolar Regulators • Standard Output Voltage Options: - 1.8V, 2.5V, 2.6V, 2.7V, 2.8V, 2.85V, 3.0V, 3.3V, 3.6V, 4.0V, 5.0V The TC1014/TC1015/TC1185 are high accuracy (typically ±0.5%) CMOS upgrades for older (bipolar) Low Dropout Regulators (LDOs) such as the LP2980. Designed specifically for battery-operated systems, the devices’ CMOS construction eliminates wasted ground current, significantly extending battery life. Total supply current is typically 50 µA at full load (20 to 60 times lower than in bipolar regulators). Applications: • • • • • • • Battery-Operated Systems Portable Computers Medical Instruments Instrumentation Cellular/GSM/PHS Phones Linear Post-Regulator for SMPS Pagers VIN 2 3 VIN VOUT 5-Pin SOT-23 5 VOUT Bypass 5 4 VOUT + TC1014 TC1015 TC1185 TC1014 TC1015 TC1185 1 µF GND SHDN The TC1014/TC1015/TC1185 are stable with an output capacitor of only 1 µF and have a maximum output current of 50 mA, 100 mA and 150 mA, respectively. For higher output current regulators, please see the TC1107 (DS21356), TC1108 (DS21357), TC1173 (DS21362) (IOUT = 300 mA) data sheets. Package Type Typical Application 1 The devices’ key features include ultra low-noise operation (plus optional Bypass input), fast response to step changes in load, and very low dropout voltage, typically 85 mV (TC1014), 180 mV (TC1015), and 270 mV (TC1185) at full-load. Supply current is reduced to 0.5 µA (max) and VOUT falls to zero when the shutdown input is low. The devices incorporate both overtemperature and overcurrent protection. 1 Bypass VIN 4 2 3 GND SHDN 470 pF Reference Bypass Cap (Optional) Shutdown Control (from Power Control Logic) © 2007 Microchip Technology Inc. DS21335E-page 1 TC1014/TC1015/TC1185 1.0 ELECTRICAL CHARACTERISTICS † Notice: Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions above those indicated in the operation sections of the specifications is not implied. Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability. Absolute Maximum Ratings† Input Voltage .........................................................6.5V Output Voltage........................... (-0.3V) to (VIN + 0.3V) Power Dissipation................Internally Limited (Note 7) Maximum Voltage on Any Pin ........VIN +0.3V to -0.3V Operating Temperature Range...... -40°C < TJ < 125°C Storage Temperature..........................-65°C to +150°C TC1014/TC1015/TC1185 ELECTRICAL SPECIFICATIONS Electrical Specifications: VIN = VR + 1V, IL = 100 µA, CL = 1.0 µF, SHDN > VIH, TA = +25°C, unless otherwise noted. Boldface type specifications apply for junction temperatures of -40°C to +125°C. Parameter Input Operating Voltage Maximum Output Current Symbol Min Typ Max Units VIN 2.7 — 6.0 V IOUTMAX 50 100 150 — — — — — — mA Device Test Conditions — Note 1 TC1014 TC1015 TC1185 VOUT VR – 2.5% VR ±0.5% VR + 2.5% V — Note 2 VOUT Temperature Coefficient TCVOUT — — 20 40 — — ppm/°C — Note 3 Line Regulation ΔVOUT/ ΔVIN — 0.05 0c.35 % — (VR + 1V) ≤ VIN ≤ 6V Load Regulation ΔVOUT/ VOUT — — 0.5 0.5 2 3 % TC1014; TC1015 TC1185 IL = 0.1 mA to IOUTMAX IL = 0.1 mA to IOUTMAX (Note 4) Dropout Voltage VIN-VOUT — — — — — 2 65 85 180 270 — — 120 250 400 mV — — — TC1015; TC1185 TC1185 IL = 100 µA IL = 20 mA IL = 50 mA IL = 100 mA IL = 150 mA (Note 5) Output Voltage IIN — 50 80 µA — SHDN = VIH, IL = 0 IINSD — 0.05 0.5 µA — SHDN = 0V PSRR — 64 — dB — FRE ≤ 1 kHz Output Short Circuit Current IOUTSC — 300 450 mA — VOUT = 0V Thermal Regulation ΔVOUT/ ΔPD — 0.04 — V/W — Notes 6, 7 TSD — 160 — °C — ΔTSD — 10 — °C — Supply Current (Note 8) Shutdown Supply Current Power Supply Rejection Ratio Thermal Shutdown Die Temperature Thermal Shutdown Hysteresis Note 1: 2: 3: The minimum VIN has to meet two conditions: VIN ≥ 2.7V and VIN ≥ VR + VDROPOUT. VR is the regulator output voltage setting. For example: VR = 1.8V, 2.5V, 2.6V, 2.7V, 2.8V, 2.85V, 3.0V, 3.3V, 3.6V, 4.0V, 5.0V. TC VOUT = (VOUTMAX – VOUTMIN)x 106 VOUT x ΔT 4: Regulation is measured at a constant junction temperature using low duty cycle pulse testing. Load regulation is tested over a load range from 1.0 mA to the maximum specified output current. Changes in output voltage due to heating effects are covered by the thermal regulation specification. Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its nominal value at a 1V differential. Thermal Regulation is defined as the change in output voltage at a time T after a change in power dissipation is applied, excluding load or line regulation effects. Specifications are for a current pulse equal to ILMAX at VIN = 6V for T = 10 ms. The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction temperature and the thermal resistance from junction-to-air (i.e., TA, TJ, θJA). Exceeding the maximum allowable power dissipation causes the device to initiate thermal shutdown. Please see Section 5.0 “Thermal Considerations” for more details. Apply for Junction Temperatures of -40°C to +85°C. 5: 6: 7: 8: DS21335E-page 2 © 2007 Microchip Technology Inc. TC1014/TC1015/TC1185 TC1014/TC1015/TC1185 ELECTRICAL SPECIFICATIONS (CONTINUED) Electrical Specifications: VIN = VR + 1V, IL = 100 µA, CL = 1.0 µF, SHDN > VIH, TA = +25°C, unless otherwise noted. Boldface type specifications apply for junction temperatures of -40°C to +125°C. Symbol Min Typ Max Units Device Output Noise Parameter eN — 600 — nV/√Hz — IL = IOUTMAX, F = 10 kHz 470 pF from Bypass to GND SHDN Input High Threshold VIH 45 — — %VIN — VIN = 2.5V to 6.5V SHDN Input Low Threshold VIL — — 15 %VIN — VIN = 2.5V to 6.5V Note Test Conditions 1: 2: 3: The minimum VIN has to meet two conditions: VIN ≥ 2.7V and VIN ≥ VR + VDROPOUT. VR is the regulator output voltage setting. For example: VR = 1.8V, 2.5V, 2.6V, 2.7V, 2.8V, 2.85V, 3.0V, 3.3V, 3.6V, 4.0V, 5.0V. TC VOUT = (VOUTMAX – VOUTMIN)x 106 VOUT x ΔT 4: Regulation is measured at a constant junction temperature using low duty cycle pulse testing. Load regulation is tested over a load range from 1.0 mA to the maximum specified output current. Changes in output voltage due to heating effects are covered by the thermal regulation specification. Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its nominal value at a 1V differential. Thermal Regulation is defined as the change in output voltage at a time T after a change in power dissipation is applied, excluding load or line regulation effects. Specifications are for a current pulse equal to ILMAX at VIN = 6V for T = 10 ms. The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction temperature and the thermal resistance from junction-to-air (i.e., TA, TJ, θJA). Exceeding the maximum allowable power dissipation causes the device to initiate thermal shutdown. Please see Section 5.0 “Thermal Considerations” for more details. Apply for Junction Temperatures of -40°C to +85°C. 5: 6: 7: 8: TEMPERATURE CHARACTERISTICS Electrical Specifications: VIN = VR + 1V, IL = 100 µA, CL = 1.0 µF, SHDN > VIH, TA = +25°C, unless otherwise noted. Boldface type specifications apply for junction temperatures of -40°C to +125°C. Parameters Sym Min Typ Max Units Extended Temperature Range TA -40 — +125 °C Operating Temperature Range TA -40 — +125 °C Storage Temperature Range TA -65 — +150 °C θJA — 256 — °C/W Conditions Temperature Ranges: Thermal Package Resistances: Thermal Resistance, 5L-SOT-23 © 2007 Microchip Technology Inc. DS21335E-page 3 TC1014/TC1015/TC1185 2.0 TYPICAL PERFORMANCE CURVES Note: The graphs and tables provided following this note are a statistical summary based on a limited number of samples and are provided for informational purposes only. The performance characteristics listed herein are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified operating range (e.g., outside specified power supply range) and therefore outside the warranted range. Note: Unless otherwise specified, all parts are measured at temperature = +25°C. Dropout Voltage vs. Temperature Dropout Voltage vs. Temperature 0.100 0.020 0.016 0.090 DROPOUT VOLTAGE (V) DROPOUT VOLTAGE (V) 0.018 VOUT = 3.3V ILOAD = 10mA 0.014 0.012 0.010 0.008 0.006 0.004 0.002 CIN = 1µF COUT = 1µF 0.080 0.070 0.060 0.050 0.040 0.030 0.020 0.010 0.000 0.000 -40 -20 FIGURE 2-1: Temperature. 0 20 50 TEMPERATURE (°C) 70 125 Dropout Voltage vs. VOUT = 3.3V ILOAD = 50mA CIN = 1µF COUT = 1µF -40 FIGURE 2-4: Temperature. Dropout Voltage vs. Temperature 0.140 0.120 0.100 0.080 0.060 0.040 0.020 0.000 CIN = 1µF COUT = 1µF -40 FIGURE 2-2: Temperature. -20 70 Dropout Voltage vs. Dropout Voltage vs. 60 50 40 30 20 CIN = 1µF COUT = 1µF 10 0.5 11 1.5 1.5 22 2.5 2.5 33 3.5 3.5 44 4.5 4.5 55 5.5 5.5 66 6.5 6.5 77 7.5 7.5 00 0.5 VIN (V) FIGURE 2-3: Voltage (VIN). DS21335E-page 4 0.200 0.150 0.100 0.050 CIN = 1µF COUT = 1µF FIGURE 2-5: Temperature. Ground Current vs. Input -20 0 20 50 TEMPERATURE (°C) 70 125 Dropout Voltage vs. Ground Current vs. VIN 90 VOUT = 3.3V ILOAD = 100mA 80 GND CURRENT (µA) 70 VOUT = 3.3V ILOAD = 150mA -40 VOUT = 3.3V ILOAD = 10mA 80 0.250 125 Ground Current vs. VIN GND CURRENT (µA) 125 0.000 0 20 50 TEMPERATURE (°C) 90 0 70 0.300 VOUT = 3.3V ILOAD = 100mA DROPOUT VOLTAGE (V) DROPOUT VOLTAGE (V) 0.160 0 20 50 TEMPERATURE (°C) Dropout Voltage vs. Temperature 0.200 0.180 -20 70 60 50 40 30 20 CIN = 1µF COUT = 1µF 10 0 1.5 2 2.5 3 3.5 0 0.5 11 1.5 3.5 44 4.5 55 5.5 5.5 6 6.5 7 7.5 7.5 VIN (V) FIGURE 2-6: Voltage (VIN). Ground Current vs. Input © 2007 Microchip Technology Inc. TC1014/TC1015/TC1185 TYPICAL PERFORMANCE CURVES (CONTINUED) Note: Unless otherwise specified, all parts are measured at temperature = +25°C. Ground Current vs. VIN VOUT vs. VIN 80 3.5 VOUT = 3.3V ILOAD = 150mA 3 60 VOUT = 3.3V ILOAD = 0 2.5 50 VOUT (V) GND CURRENT (µA) 70 40 2 1.5 30 1 20 0 0 1.5 2 2.5 3 3.5 3.5 44 4.5 55 5.5 0 0.5 0.5 11 1.5 5.5 66 6.5 6.5 77 0 0.5 1 1.5 2 2.5 2.5 3 3.5 3.5 4 4.5 4.5 5 5.5 5.5 6 6.5 6.5 77 7.5 VIN (V) FIGURE 2-7: Voltage (VIN). Ground Current vs. Input VIN (V) FIGURE 2-10: Output Voltage (VOUT) vs. Input Voltage (VIN). Output Voltage vs. Temperature VOUT vs. VIN 3.320 3.5 OUT == 3.3V IVLOAD 100mA ILOAD = 100mA 3.0 CIN = 1µF COUT = 1µF 0.5 CIN = 1µF COUT = 1µF 10 3.315 VOUT = 3.3V ILOAD = 10mA 3.310 3.305 VOUT (V) VOUT (V) 2.5 2.0 1.5 3.300 3.295 3.290 1.0 3.285 0.5 0.0 CIN = 1µF COUT = 1µF 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7 VIN (V) FIGURE 2-8: Output Voltage (VOUT) vs. Input Voltage (VIN). 3.280 3.275 -40 CIN = 1µF COUT = 1µF VIN = 4.3V -20 FIGURE 2-11: Temperature. -10 0 20 40 TEMPERATURE (°C) 85 125 Output Voltage (VOUT) vs. Output Voltage vs. Temperature 3.290 3.288 VOUT = 3.3V ILOAD = 150mA VOUT (V) 3.286 3.284 3.282 3.280 3.278 3.276 3.274 CIN = 1µF COUT = 1µF VIN = 4.3V -40 FIGURE 2-9: Temperature. -20 -10 0 20 40 TEMPERATURE (°C) 85 125 Output Voltage (VOUT) vs. © 2007 Microchip Technology Inc. DS21335E-page 5 TC1014/TC1015/TC1185 TYPICAL PERFORMANCE CURVES (CONTINUED) Note: Unless otherwise specified, all parts are measured at temperature = +25°C. Output Voltage vs. Temperature Output Voltage vs. Temperature 4.994 5.025 5.020 VOUT = 5V ILOAD = 10mA 4.992 4.990 4.988 5.010 VOUT (V) VOUT (V) 5.015 5.005 5.000 4.995 4.990 4.985 VOUT = 5V ILOAD = 150mA 4.986 4.984 4.982 4.980 4.978 CIN = 1µF COUT = 1µF VIN = 6V CIN = 1µF COUT = 1µF VIN = 6V 4.976 4.974 -40 -20 -10 0 20 40 85 125 -40 -20 -10 0 20 40 TEMPERATURE (°C) TEMPERATURE (°C) Output Voltage (VOUT) vs. Temperature vs. Quiescent Current Temperature vs. Quiescent Current 70 80 VOUT = 5V ILOAD = 10mA 70 GND CURRENT (μA) GND CURRENT (µA) 60 50 40 30 20 10 0 CIN = 1µF COUT = 1µF VIN = 6V -40 -20 FIGURE 2-13: 85 40 30 20 -20 -10 0 20 40 TEMPERATURE (°C) FIGURE 2-15: RLOAD = 50Ω COUT = 1μF CIN = 1μF CBYP = 0 -40 COUT ESR (Ω) 100 1 -45 Stable Region 125 Power Supply Rejection Ratio -30 -35 COUT = 1μF to 10μF 10 85 IGND vs. Temperature. Stability Region vs. Load Current 1000 1.0 CIN = 1μF COUT = 1μF VIN = 6V -40 125 Output Noise vs. Frequency NOISE (μV/√Hz) 50 0 -10 0 20 40 TEMPERATURE (°C) VOUT = 5V ILOAD = 150mA 60 10 IGND vs. Temperature. 10.0 125 Output Voltage (VOUT) vs. FIGURE 2-14: Temperature. PSRR (dB) FIGURE 2-12: Temperature. 85 -50 IOUT = 10mA VINDC = 4V VINAC = 100mVp-p VOUT = 3V CIN = 0 COUT = 1μF -55 -60 -65 0.1 -70 0.1 -75 0.0 0.01K 0.1K 0.01 1K 10K 100K 1000K FREQUENCY (Hz) FIGURE 2-16: DS21335E-page 6 0 10 20 30 40 50 60 70 80 90 100 LOAD CURRENT (mA) -80 0.01K 0.1K 1K 10K 100K 1000K FREQUENCY (Hz) AC Characteristics. © 2007 Microchip Technology Inc. TC1014/TC1015/TC1185 TYPICAL PERFORMANCE CURVES (CONTINUED) Note: Unless otherwise specified, all parts are measured at temperature = +25°C. Measure Rise Time of 3.3V LDO With Bypass Capacitor Measure Rise Time of 3.3V LDO Without Bypass Capacitor Conditions: CIN = 1μF, COUT = 1μF, CBYP = 470pF, ILOAD = 100mA VIN = 4.3V, Temp = 25°C, Rise Time = 448μS Conditions: CIN = 1μF, COUT = 1μF, CBYP = 0pF, ILOAD = 100mA VIN = 4.3V, Temp = 25°C, Rise Time = 184μS VSHDN VSHDN VOUT VOUT FIGURE 2-17: Measure Rise Time of 3.3V with Bypass Capacitor. FIGURE 2-19: Measure Rise Time of 3.3V without Bypass Capacitor. Measure Fall Time of 3.3V LDO With Bypass Capacitor Measure Fall Time of 3.3V LDO Without Bypass Capacitor Conditions: CIN = 1μF, COUT = 1μF, CBYP = 470pF, ILOAD = 50mA VIN = 4.3V, Temp = 25°C, Fall Time = 100μS Conditions: CIN = 1μF, COUT = 1μF, CBYP = 0pF, ILOAD = 100mA VIN = 4.3V, Temp = 25°C, Fall Time = 52μS VSHDN VSHDN VOUT VOUT FIGURE 2-18: Measure Fall Time of 3.3V with Bypass Capacitor. © 2007 Microchip Technology Inc. FIGURE 2-20: Measure Fall Time of 3.3V without Bypass Capacitor. DS21335E-page 7 TC1014/TC1015/TC1185 TYPICAL PERFORMANCE CURVES (CONTINUED) Note: Unless otherwise specified, all parts are measured at temperature = +25°C. Measure Rise Time of 5.0V LDO With Bypass Capacitor Measure Rise Time of 5.0V LDO Without Bypass Capacitor Conditions: CIN = 1μF, COUT = 1μF, CBYP = 470pF, ILOAD = 100mA VIN = 6V, Temp = 25°C, Rise Time = 390μS Conditions: CIN = 1μF, COUT = 1μF, CBYP = 0pF, ILOAD = 100mA VIN = 6V, Temp = 25°C, Rise Time = 192μS VSHDN VSHDN VOUT VOUT FIGURE 2-21: Measure Rise Time of 5.0V with Bypass Capacitor. FIGURE 2-23: Measure Rise Time of 5.0V without Bypass Capacitor. Measure Fall Time of 5.0V LDO With Bypass Capacitor Measure Fall Time of 5.0V LDO Without Bypass Capacitor Conditions: CIN = 1μF, COUT = 1μF, CBYP = 470pF, ILOAD = 50mA VIN = 6V, Temp = 25°C, Fall Time = 167μS Conditions: CIN = 1μF, COUT = 1μF, CBYP = 0pF, ILOAD = 100mA VIN = 6V, Temp = 25°C, Fall Time = 88μS VSHDN VSHDN VOUT VOUT FIGURE 2-22: Measure Fall Time of 5.0V with Bypass Capacitor. DS21335E-page 8 FIGURE 2-24: Measure Fall Time of 5.0V without Bypass Capacitor. © 2007 Microchip Technology Inc. TC1014/TC1015/TC1185 TYPICAL PERFORMANCE CURVES (CONTINUED) Note: Unless otherwise specified, all parts are measured at temperature = +25°C. Load Regulation of 3.3V LDO Load Regulation of 3.3V LDO Conditions: CIN = 1μF, COUT = 2.2μF, CBYP = 470pF, VIN = VOUT + 0.25V, Temp = 25°C Conditions: CIN = 1μF, COUT = 2.2μF, CBYP = 470pF, VIN = VOUT + 0.25V, Temp = 25°C ILOAD = 50mA switched in at 10kHz, VOUT is AC coupled ILOAD = 100mA switched in at 10kHz, VOUT is AC coupled ILOAD ILOAD VOUT VOUT FIGURE 2-25: LDO. Load Regulation of 3.3V FIGURE 2-27: LDO. Load Regulation of 3.3V Load Regulation of 3.3V LDO Line Regulation of 3.3V LDO Conditions: CIN = 1μF, COUT = 2.2μF, CBYP = 470pF, VIN = VOUT + 0.25V, Temp = 25°C Conditions: VIN = 4V, + 1V Squarewave @2.5kHz ILOAD = 150mA switched in at 10kHz, VOUT is AC coupled ILOAD VIN VOUT VOUT CIN = 0μF, COUT = 1μF, CBYP = 470pF, ILOAD = 100mA, VIN & VOUT are AC coupled FIGURE 2-26: LDO. Load Regulation of 3.3V © 2007 Microchip Technology Inc. FIGURE 2-28: LDO. Load Regulation of 3.3V DS21335E-page 9 TC1014/TC1015/TC1185 TYPICAL PERFORMANCE CURVES (CONTINUED) Note: Unless otherwise specified, all parts are measured at temperature = +25°C. Thermal Shutdown Response of 5.0V LDO Line Regulation of 5.0V LDO Conditions: VIN = 6V, CIN = 0μF, COUT = 1μF Conditions: VIN = 6V, + 1V Squarewave @2.5kHz VIN VOUT VOUT CIN = 0μF, COUT = 1μF, CBYP = 470pF, ILOAD = 100mA, VIN & VOUT are AC coupled FIGURE 2-29: LDO. DS21335E-page 10 Line Regulation of 5.0V ILOAD was increased until temperature of die reached about 160°C, at which time integrated thermal protection circuitry shuts the regulator off when die temperature exceeds approximately 160°C. The regulator remains off until die temperature drops to approximately 150°C. FIGURE 2-30: Thermal Shutdown Response of 5.0V LDO. © 2007 Microchip Technology Inc. TC1014/TC1015/TC1185 3.0 PIN DESCRIPTIONS The descriptions of the pins are listed in Table 3-1. TABLE 3-1: PIN FUNCTION TABLE Pin No. (5-Pin SOT-23) Symbol 1 VIN 3.1 Description Unregulated supply input. 2 GND 3 SHDN Ground terminal. Shutdown control input. The regulator is fully enabled when a logic high is applied to this input. The regulator enters shutdown when a logic low is applied to this input. During shutdown, output voltage falls to zero and supply current is reduced to 0.5 µA (maximum). 4 Bypass Reference bypass input. Connecting a 470 pF to this input further reduces output noise. 5 VOUT Regulated voltage output. Input Voltage (VIN) Connect the VIN pin to the unregulated source voltage. Like all low dropout linear regulators, low source impedance is necessary for the stable operation of the LDO. The amount of capacitance required to ensure low source impedance will depend on the proximity of the input source capacitors or battery type. For most applications, 1.0 µF of capacitance will ensure stable operation of the LDO circuit. The type of capacitor used can be ceramic, tantalum or aluminum electrolytic. The low Effective Series Resistance (ESR) characteristics of the ceramic will yield better noise and Power Supply Ripple Rejection (PSRR) performance at high frequency. 3.2 Ground Terminal (GND) Connect the ground pin to the input voltage return. For the optimal noise and PSRR performance, the GND pin of the LDO should be tied to a quiet circuit ground. For applications have switching or noisy inputs tie the GND pin to the return of the output capacitor. Ground planes help lower inductance and voltage spikes caused by fast transient load currents and are recommended for applications that are subjected to fast load transients. © 2007 Microchip Technology Inc. 3.3 Shutdown (SHDN) The Shutdown input is used to turn the LDO on and off. When the SHDN pin is at a logic high level, the LDO output is enabled. When the SHDN pin is pulled to a logic low, the LDO output is disabled. When disabled, the quiescent current used by the LDO is less than 0.5 µA max. 3.4 Bypass Connecting a low-value ceramic capacitor to the Bypass pin will further reduce output voltage noise and improve the PSRR performance of the LDO. While smaller and larger values can be used, these affect the speed at which the LDO output voltage rises when the input power is applied. The larger the bypass capacitor, the slower the output voltage will rise. 3.5 Output Voltage (VOUT) Connect the output load to VOUT of the LDO. Also connect one side of the LDO output capacitor as close as possible to the VOUT pin. DS21335E-page 11 TC1014/TC1015/TC1185 4.0 DETAILED DESCRIPTION 4.1 Bypass Input The TC1014, TC1015 and TC1185 are precision fixed output voltage regulators (if an adjustable version is needed, see the TC1070, TC1071 and TC1187 data sheet (DS21353). Unlike bipolar regulators, the TC1014, TC1015 and TC1185 supply current does not increase with load current. In addition, the LDOs’ output voltage is stable using 1 µF of capacitance over the entire specified input voltage range and output current range. A 470 pF capacitor connected from the Bypass input to ground reduces noise present on the internal reference, which in turn, significantly reduces output noise. If output noise is not a concern, this input may be left unconnected. Larger capacitor values may be used, but results in a longer time period to rated output voltage when power is initially applied. Figure 4-1 shows a typical application circuit. The regulator is enabled anytime the shutdown input (SHDN) is at or above VIH, and disabled when SHDN is at or below VIL. SHDN may be controlled by a CMOS logic gate or I/O port of a microcontroller. If the SHDN input is not required, it should be connected directly to the input supply. While in shutdown, the supply current decreases to 0.05 µA (typical) and VOUT falls to zero volts. A 1 µF (min) capacitor from VOUT to ground is required. The output capacitor should have an effective series resistance greater than 0.1Ω and less than 5Ω. A 1 µF capacitor should be connected from VIN to GND if there is more than 10 inches of wire between the regulator and the AC filter capacitor, or if a battery is used as the power source. Aluminum electrolytic or tantalum capacitor types can be used. (Since many aluminum electrolytic capacitors freeze at approximately -30°C, solid tantalums are recommended for applications operating below -25°C.) When operating from sources other than batteries, supply-noise rejection and transient response can be improved by increasing the value of the input and output capacitors and employing passive filtering techniques. + + 1 µF Battery VIN VOUT TC1014 TC1015 TC1185 GND SHDN + 1 µF VOUT 4.3 Bypass 470 pF Reference Bypass Cap (Optional) Shutdown Control (to CMOS Logic or Tie to VIN if unused) FIGURE 4-1: DS21335E-page 12 4.2 Typical Application Circuit. Output Capacitor Input Capacitor A 1 µF capacitor should be connected from VIN to GND if there is more than 10 inches of wire between the regulator and this AC filter capacitor, or if a battery is used as the power source. Aluminum electrolytic or tantalum capacitors can be used (since many aluminum electrolytic capacitors freeze at approximately -30°C, solid tantalum is recommended for applications operating below -25°C). When operating from sources other than batteries, supplynoise rejection and transient response can be improved by increasing the value of the input and output capacitors and employing passive filtering techniques. © 2007 Microchip Technology Inc. TC1014/TC1015/TC1185 5.0 THERMAL CONSIDERATIONS 5.1 Thermal Shutdown Integrated thermal protection circuitry shuts the regulator off when die temperature exceeds 160°C. The regulator remains off until the die temperature drops to approximately 150°C. 5.2 Equation 5-1 can be used in conjunction with Equation 5-2 to ensure regulator thermal operation is within limits. For example: Given: VINMAX = 3.0V +10% VOUTMIN = 2.7V – 2.5% ILOADMAX = 40 mA TJMAX = 125°C TAMAX = 55°C Power Dissipation The amount of power the regulator dissipates is primarily a function of input and output voltage, and output current. The following equation is used to calculate worst-case actual power dissipation: EQUATION 5-1: P D ≈ ( V INMAX – V OUTMIN )I LOADMAX Where: Find: 1. Actual power dissipation 2. Maximum allowable dissipation Actual power dissipation: PD ≈ (VINMAX – VOUTMIN)ILOADMAX = [(3.0 x 1.1) – (2.7 x .975)]40 x 10–3 = 26.7 mW PD = Worst-case actual power dissipation Maximum allowable power dissipation: ( T JMAX – T AMAX ) P DMAX = ------------------------------------------θ JA 125 – 55 ) = (------------------------220 = 318 mW VINMAX = Maximum voltage on VIN VOUTMIN = Minimum regulator output voltage ILOADMAX = Maximum output (load) current The maximum allowable power dissipation (Equation 5-2) is a function of the maximum ambient temperature (TAMAX), the maximum allowable die temperature (TJMAX) and the thermal resistance from junction-to-air (θJA). The 5-pin SOT-23 package has a θJA of approximately 220°C/Watt. In this example, the TC1014 dissipates a maximum of 26.7 mW below the allowable limit of 318 mW. In a similar manner, Equation 5-1 and Equation 5-2 can be used to calculate maximum current and/or input voltage limits. EQUATION 5-2: 5.3 ( T JMAX – T AMAX ) P DMAX = ------------------------------------------θ JA Where all terms are previously defined. © 2007 Microchip Technology Inc. Layout Considerations The primary path of heat conduction out of the package is via the package leads. Therefore, layouts having a ground plane, wide traces at the pads, and wide power supply bus lines combine to lower θJA and therefore increase the maximum allowable power dissipation limit. DS21335E-page 13 TC1014/TC1015/TC1185 6.0 PACKAGING INFORMATION TABLE 6-1: 6.1 PART NUMBER CODE AND TEMPERATURE RANGE Package Marking Information 1 2 3 4 (V) TC1014 Code TC1015 Code TC1185 Code 1.8 AY BY NY 2.5 A1 B1 N1 2.6 NB BT NT 2.7 A2 B2 N2 2.8 AZ BZ NZ 2.85 A8 B8 N8 3.0 A3 B3 N3 3.3 A5 B5 N5 range and voltage 3.6 A9 B9 N9 e represents year and 2-month period code 4.0 A0 B0 N0 f represents lot ID number 5.0 A7 B7 N7 c & d represents part number code + temperature 6.2 Taping Form User Direction of Feed Device Marking PIN 1 PIN 1 W, Width of Carrier Tape P,Pitch Standard Reel Component Orientation Reverse Reel Component Orientation Carrier Tape, Number of Components per Reel and Reel Size Package Carrier Width (W) Pitch (P) Part Per Full Reel Reel Size 5-Pin SOT-23 8 mm 4 mm 3000 7 in DS21335E-page 14 © 2007 Microchip Technology Inc. TC1014/TC1015/TC1185 5-Lead Plastic Small Outline Transistor (OT) [SOT-23] Note: For the most current package drawings, please see the Microchip Packaging Specification located at http://www.microchip.com/packaging b N E E1 3 2 1 e e1 D A2 A c φ A1 L L1 Units Dimension Limits Number of Pins MILLIMETERS MIN NOM MAX N 5 Lead Pitch e 0.95 BSC Outside Lead Pitch e1 Overall Height A 0.90 – Molded Package Thickness A2 0.89 – 1.30 Standoff A1 0.00 – 0.15 Overall Width E 2.20 – 3.20 Molded Package Width E1 1.30 – 1.80 Overall Length D 2.70 – 3.10 Foot Length L 0.10 – 0.60 Footprint L1 0.35 – 0.80 Foot Angle φ 0° – 30° Lead Thickness c 0.08 – 0.26 1.90 BSC 1.45 Lead Width b 0.20 – 0.51 Notes: 1. Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed 0.127 mm per side. 2. Dimensioning and tolerancing per ASME Y14.5M. BSC: Basic Dimension. Theoretically exact value shown without tolerances. Microchip Technology Drawing C04-091B © 2007 Microchip Technology Inc. DS21335E-page 15 TC1014/TC1015/TC1185 NOTES: DS21335E-page 16 © 2007 Microchip Technology Inc. TC1014/TC1015/TC1185 APPENDIX A: REVISION HISTORY Revision E (February 2007) • Section 1.0 “Electrical characteristics”: Changed Dropout Voltage from mA to µA. • Updated “Product Identification System”, page 19. • Updated Section 6.0 “Packaging Information”. Revision D (April 2006) • Removed “ERROR is open circuited” from SHDN pin description in Pin Function Table. • Added verbiage for pinout descriptions in Pin Function Table. • Replaced verbiage in first paragraph of Section 4.0 Detailed Description. • Added Section 4.3 Input Capacitor Revision C (January 2006) • Changed TR suffix to 713 suffix in Taping Form in Package Marking Section Revision B (May 2002) • Converted Telcom data sheet to Microchip standard for Analog Handbook Revision A (February 2001) • Original Release of this Document under Telcom. © 2007 Microchip Technology Inc. DS21335E-page 17 TC1014/TC1015/TC1185 NOTES: DS21335E-page 18 © 2007 Microchip Technology Inc. TC1014/TC1015/TC1185 PRODUCT IDENTIFICATION SYSTEM To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office. PART NO. -X.X X XXXXX Device Output Voltage Temperature Range Package Device: TC1014: TC1015: TC1185: 50 mA LDO with Shutdown and VREF Bypass 100 mA LDO with Shutdown and VREF Bypass 150 mA LDO with Shutdown and VREF Bypass Output Voltage: 1.8 2.5 2.6 2.7 2.8 2.85 3.0 3.3 3.6 4.0 5.0 = = = = = = = = = = = Temperature Range: V = -40° C to +125° C Package: CT713 = Plastic Small Outline Transistor (SOT-23), 5-lead, Tape and Reel Examples: a) TC1014-1.8VCT713: b) TC1014-2.85VCT713: 2.85V, 5LD SOT-23, Tape and Reel. c) TC1014-3.3VCT713: 3.3V, 5LD SOT-23, Tape and Reel. a) TC1015-1.8VCT713: 1.8V 2.5V 2.6V 2.7V 2.8V 2.85V 3.0V 3.3V 3.6V 4.0V 5.0V © 2007 Microchip Technology Inc. 1.8V, 5LD SOT-23, Tape and Reel. 1.8V, 5LD SOT-23, Tape and Reel. b) TC1015-2.85VCT713: 2.85V, 5LD SOT-23, Tape and Reel. c) TC1015-3.0VCT713: 3.0V, 5LD SOT-23, Tape and Reel. a) TC1185-1.8VCT713: 1.8V, 5LD SOT-23, Tape and Reel. b) TC1185-2.8VCT713: 2.8V, 5LD SOT-23, Tape and Reel. DS21335E-page 19 TC1014/TC1015/TC1185 NOTES: DS21335E-page 20 © 2007 Microchip Technology Inc. Note the following details of the code protection feature on Microchip devices: • Microchip products meet the specification contained in their particular Microchip Data Sheet. • Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the intended manner and under normal conditions. • There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip’s Data Sheets. Most likely, the person doing so is engaged in theft of intellectual property. • Microchip is willing to work with the customer who is concerned about the integrity of their code. • Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not mean that we are guaranteeing the product as “unbreakable.” Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our products. Attempts to break Microchip’s code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act. Information contained in this publication regarding device applications and the like is provided only for your convenience and may be superseded by updates. It is your responsibility to ensure that your application meets with your specifications. MICROCHIP MAKES NO REPRESENTATIONS OR WARRANTIES OF ANY KIND WHETHER EXPRESS OR IMPLIED, WRITTEN OR ORAL, STATUTORY OR OTHERWISE, RELATED TO THE INFORMATION, INCLUDING BUT NOT LIMITED TO ITS CONDITION, QUALITY, PERFORMANCE, MERCHANTABILITY OR FITNESS FOR PURPOSE. Microchip disclaims all liability arising from this information and its use. Use of Microchip devices in life support and/or safety applications is entirely at the buyer’s risk, and the buyer agrees to defend, indemnify and hold harmless Microchip from any and all damages, claims, suits, or expenses resulting from such use. No licenses are conveyed, implicitly or otherwise, under any Microchip intellectual property rights. Trademarks The Microchip name and logo, the Microchip logo, Accuron, dsPIC, KEELOQ, KEELOQ logo, microID, MPLAB, PIC, PICmicro, PICSTART, PRO MATE, PowerSmart, rfPIC, and SmartShunt are registered trademarks of Microchip Technology Incorporated in the U.S.A. and other countries. AmpLab, FilterLab, Linear Active Thermistor, Migratable Memory, MXDEV, MXLAB, PS logo, SEEVAL, SmartSensor and The Embedded Control Solutions Company are registered trademarks of Microchip Technology Incorporated in the U.S.A. Analog-for-the-Digital Age, Application Maestro, CodeGuard, dsPICDEM, dsPICDEM.net, dsPICworks, ECAN, ECONOMONITOR, FanSense, FlexROM, fuzzyLAB, In-Circuit Serial Programming, ICSP, ICEPIC, Mindi, MiWi, MPASM, MPLAB Certified logo, MPLIB, MPLINK, PICkit, PICDEM, PICDEM.net, PICLAB, PICtail, PowerCal, PowerInfo, PowerMate, PowerTool, REAL ICE, rfLAB, rfPICDEM, Select Mode, Smart Serial, SmartTel, Total Endurance, UNI/O, WiperLock and ZENA are trademarks of Microchip Technology Incorporated in the U.S.A. and other countries. SQTP is a service mark of Microchip Technology Incorporated in the U.S.A. All other trademarks mentioned herein are property of their respective companies. © 2007, Microchip Technology Incorporated, Printed in the U.S.A., All Rights Reserved. Printed on recycled paper. Microchip received ISO/TS-16949:2002 certification for its worldwide headquarters, design and wafer fabrication facilities in Chandler and Tempe, Arizona, Gresham, Oregon and Mountain View, California. The Company’s quality system processes and procedures are for its PIC® MCUs and dsPIC® DSCs, KEELOQ® code hopping devices, Serial EEPROMs, microperipherals, nonvolatile memory and analog products. In addition, Microchip’s quality system for the design and manufacture of development systems is ISO 9001:2000 certified. © 2007 Microchip Technology Inc. DS21335E-page 21 WORLDWIDE SALES AND SERVICE AMERICAS ASIA/PACIFIC ASIA/PACIFIC EUROPE Corporate Office 2355 West Chandler Blvd. Chandler, AZ 85224-6199 Tel: 480-792-7200 Fax: 480-792-7277 Technical Support: http://support.microchip.com Web Address: www.microchip.com Asia Pacific Office Suites 3707-14, 37th Floor Tower 6, The Gateway Habour City, Kowloon Hong Kong Tel: 852-2401-1200 Fax: 852-2401-3431 India - Bangalore Tel: 91-80-4182-8400 Fax: 91-80-4182-8422 India - New Delhi Tel: 91-11-4160-8631 Fax: 91-11-4160-8632 Austria - Wels Tel: 43-7242-2244-39 Fax: 43-7242-2244-393 Denmark - Copenhagen Tel: 45-4450-2828 Fax: 45-4485-2829 India - Pune Tel: 91-20-2566-1512 Fax: 91-20-2566-1513 France - Paris Tel: 33-1-69-53-63-20 Fax: 33-1-69-30-90-79 Japan - Yokohama Tel: 81-45-471- 6166 Fax: 81-45-471-6122 Germany - Munich Tel: 49-89-627-144-0 Fax: 49-89-627-144-44 Atlanta Duluth, GA Tel: 678-957-9614 Fax: 678-957-1455 Boston Westborough, MA Tel: 774-760-0087 Fax: 774-760-0088 Chicago Itasca, IL Tel: 630-285-0071 Fax: 630-285-0075 Dallas Addison, TX Tel: 972-818-7423 Fax: 972-818-2924 Detroit Farmington Hills, MI Tel: 248-538-2250 Fax: 248-538-2260 Kokomo Kokomo, IN Tel: 765-864-8360 Fax: 765-864-8387 Los Angeles Mission Viejo, CA Tel: 949-462-9523 Fax: 949-462-9608 Santa Clara Santa Clara, CA Tel: 408-961-6444 Fax: 408-961-6445 Toronto Mississauga, Ontario, Canada Tel: 905-673-0699 Fax: 905-673-6509 Australia - Sydney Tel: 61-2-9868-6733 Fax: 61-2-9868-6755 China - Beijing Tel: 86-10-8528-2100 Fax: 86-10-8528-2104 China - Chengdu Tel: 86-28-8665-5511 Fax: 86-28-8665-7889 Korea - Gumi Tel: 82-54-473-4301 Fax: 82-54-473-4302 China - Fuzhou Tel: 86-591-8750-3506 Fax: 86-591-8750-3521 Korea - Seoul Tel: 82-2-554-7200 Fax: 82-2-558-5932 or 82-2-558-5934 China - Hong Kong SAR Tel: 852-2401-1200 Fax: 852-2401-3431 Malaysia - Penang Tel: 60-4-646-8870 Fax: 60-4-646-5086 China - Qingdao Tel: 86-532-8502-7355 Fax: 86-532-8502-7205 Philippines - Manila Tel: 63-2-634-9065 Fax: 63-2-634-9069 China - Shanghai Tel: 86-21-5407-5533 Fax: 86-21-5407-5066 Singapore Tel: 65-6334-8870 Fax: 65-6334-8850 China - Shenyang Tel: 86-24-2334-2829 Fax: 86-24-2334-2393 Taiwan - Hsin Chu Tel: 886-3-572-9526 Fax: 886-3-572-6459 China - Shenzhen Tel: 86-755-8203-2660 Fax: 86-755-8203-1760 Taiwan - Kaohsiung Tel: 886-7-536-4818 Fax: 886-7-536-4803 China - Shunde Tel: 86-757-2839-5507 Fax: 86-757-2839-5571 Taiwan - Taipei Tel: 886-2-2500-6610 Fax: 886-2-2508-0102 China - Wuhan Tel: 86-27-5980-5300 Fax: 86-27-5980-5118 Thailand - Bangkok Tel: 66-2-694-1351 Fax: 66-2-694-1350 Italy - Milan Tel: 39-0331-742611 Fax: 39-0331-466781 Netherlands - Drunen Tel: 31-416-690399 Fax: 31-416-690340 Spain - Madrid Tel: 34-91-708-08-90 Fax: 34-91-708-08-91 UK - Wokingham Tel: 44-118-921-5869 Fax: 44-118-921-5820 China - Xian Tel: 86-29-8833-7250 Fax: 86-29-8833-7256 12/08/06 DS21335E-page 22 © 2007 Microchip Technology Inc.