TC2014/2015/2185 50 mA, 100 mA, 150 mA CMOS LDOs with Shutdown and Reference Bypass Features General Description • • • • • • The TC2014, TC2015 and TC2185 are high-accuracy (typically ±0.4%) CMOS upgrades for bipolar Low Drop-out Regulators (LDOs), such as the LP2980. Total supply current is typically 55 µA; 20 to 60 times lower than in bipolar regulators. • • • • • • Low Supply Current: 80 µA (Max) Low Dropout Voltage: 140 mV (Typ.) @ 150 mA High-Output Voltage Accuracy: ±0.4% (Typ.) Standard or Custom Output Voltages Power-Saving Shutdown Mode Reference Bypass Input for Ultra Low-Noise Operation Fast Shutdown Response Time: 60 µsec (Typ.) Overcurrent and Overtemperature Protection Space-Saving 5-Pin SOT-23A Package Pin-Compatible Upgrades for Bipolar Regulators Wide Operating Temperature Range: -40°C to +125°C Standard Output Voltage Options: - 1.8V, 2.5V, 2.6V, 2.7V, 2.8V, 2.85V, 3.0V, 3.3V, 5.0V Applications • • • • • • • Battery-Operated Systems Portable Computers Medical Instruments Instrumentation Cellular/GSM/PHS Phones Linear Post-Regulator for SMPS Pagers The key features of the device include low noise operation (plus bypass reference), low dropout voltage – typically 45 mV for the TC2014, 90 mV for the TC2015, and 140 mV for the TC2185, at full load – and fast response to step changes in load. Supply current is reduced to 0.5 µA (max) and VOUT falls to zero when the shutdown input is low. These devices also and overtemperature incorporate overcurrent protection. The TC2014, TC2015 and TC2185 are stable with an output capacitor of 1 µF and have maximum output currents of 50 mA, 100 mA and 150 mA, respectively. For higher-output current versions, see the TC1107 (DS21356), TC1108 (DS21357) and TC1173 (DS21362) (IOUT = 300 mA) data sheets. Typical Application 1 VIN + VOUT VIN 5 VOUT + 1 µF 1 µF Related Literature 2 • Application Notes: AN765, AN766, AN776 and AN792 GND TC2014 TC2015 TC2185 Package Type 5-Pin SOT-23A VOUT Bypass 5 4 TC2014 TC2015 TC2185 1 VIN 2 3 SHDN Bypass 4 0.01 µF Reference Bypass Cap (Optional) Shutdown Control (from Power Control Logic) 3 GND SHDN 2001-2012 Microchip Technology Inc. DS21662F-page 1 TC2014/2015/2185 1.0 ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings † Input Voltage ................................................................... 7.0V Output Voltage ....................................... (– 0.3) to (VIN + 0.3) Operating Temperature ......................... – 40°C < TJ < 125°C † Notice: Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions above those indicated in the operation sections of the specifications is not implied. Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability. Storage Temperature.................................. – 65°C to +150°C Maximum Voltage on Any Pin ................ VIN +0.3V to – 0.3V Maximum Junction Temperature ...................... ............ 150°C ELECTRICAL CHARACTERISTICS Electrical Specifications: Unless otherwise specified, VIN = VR + 1V, IL = 100 µA, COUT = 3.3 µF, SHDN > VIH, TA = +25°C. BOLDFACE type specifications apply for junction temperature of -40°C to +125°C. Parameters Sym Min Typ Max Units Input Operating Voltage VIN 2.7 — 6.0 V mA Maximum Output Current Output Voltage VOUT Temperature Coefficient IOUTMAX 50 — — 100 — — 150 — — VOUT VR – 2.0% VR ± 0.4% VR + 2.0% TCVOUT — 20 — — 40 — Conditions Note 1 TC2014 TC2015 TC2185 V Note 2 ppm/°C Note 3 Line Regulation VOUT/VIN — 0.05 0.5 % (VR + 1V) < VIN < 6V Load Regulation (Note 4) VOUT/VOUT -1.0 0.33 +1.0 % TC2014;TC2015: IL = 0.1 mA to IOUTMAX -2.0 0.43 +2.0 Dropout Voltage VIN – VOUT — 2 — — 45 70 — 90 140 TC2185: IL = 0.1 mA to IOUTMAX (Note 4) mV Note 5 IL = 100 µA IL = 50 mA TC2015; TC2185 IL = 100 mA — 140 210 IIN — 55 80 µA SHDN = VIH, IL = 0 IINSD — 0.05 0.5 µA SHDN = 0V Power Supply Rejection Ratio PSRR — 55 — dB F 1 kHz, Cbypass = 0.01 µF Output Short Circuit Current IOUTSC — 160 300 mA VOUT = 0V Supply Current Shutdown Supply Current TC2185 IL = 150 mA Note 1: The minimum VIN has to meet two conditions: VIN = 2.7V and VIN = VR + VDROPOUT. 2: VR is the regulator output voltage setting. For example: VR = 1.8V, 2.7V, 2.8V, 2.85V, 3.0V, 3.3V. 3: –6 V OUTMAX – V OUTMIN 10 TCV OUT = --------------------------------------------------------------------------V OUT T 4: Regulation is measured at a constant junction temperature using low duty cycle pulse testing. Load regulation is tested over a load range from 1.0 mA to the maximum specified output current. Changes in output voltage due to heating effects are covered by the Thermal Regulation specification. 5: Dropout Voltage is defined as the input-to-output differential at which the output voltage drops 2% below its nominal value. 6: Thermal Regulation is defined as the change in output voltage at a time T after a change in power dissipation is applied, excluding load or line regulation effects. Specifications are for a current pulse equal to IMAX at VIN = 6V for T = 10 ms. 7: The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction temperature and the thermal resistance from junction-to-air (i.e. TA, TJ, JA). 8: Time required for VOUT to reach 95% of VR (output voltage setting), after VSHDN is switched from 0 to VIN. DS21662F-page 2 2001-2012 Microchip Technology Inc. TC2014/2015/2185 ELECTRICAL CHARACTERISTICS (CONTINUED) Electrical Specifications: Unless otherwise specified, VIN = VR + 1V, IL = 100 µA, COUT = 3.3 µF, SHDN > VIH, TA = +25°C. BOLDFACE type specifications apply for junction temperature of -40°C to +125°C. Parameters Sym Min Typ Max Units VOUT/PD — 0.04 — V/W Thermal Shutdown Die Temperature TSD — 160 — °C Output Noise eN — 200 — Response Time (from Shutdown Mode) (Note 8) TR — 60 — µs SHDN Input High Threshold VIH 60 — — %VIN VIN = 2.5V to 6.0V SHDN Input Low Threshold VIL — — 15 %VIN VIN = 2.5V to 6.0V Thermal Regulation Conditions Note 6, Note 7 nV/Hz IL = IOUTMAX, F = 10 kHz 470 pF from Bypass to GND VIN = 4V, IL = 30 mA, CIN = 1 µF, COUT = 10 µF SHDN Input Note 1: The minimum VIN has to meet two conditions: VIN = 2.7V and VIN = VR + VDROPOUT. 2: VR is the regulator output voltage setting. For example: VR = 1.8V, 2.7V, 2.8V, 2.85V, 3.0V, 3.3V. 3: –6 V OUTMAX – V OUTMIN 10 TCV OUT = --------------------------------------------------------------------------V OUT T 4: Regulation is measured at a constant junction temperature using low duty cycle pulse testing. Load regulation is tested over a load range from 1.0 mA to the maximum specified output current. Changes in output voltage due to heating effects are covered by the Thermal Regulation specification. 5: Dropout Voltage is defined as the input-to-output differential at which the output voltage drops 2% below its nominal value. 6: Thermal Regulation is defined as the change in output voltage at a time T after a change in power dissipation is applied, excluding load or line regulation effects. Specifications are for a current pulse equal to IMAX at VIN = 6V for T = 10 ms. 7: The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction temperature and the thermal resistance from junction-to-air (i.e. TA, TJ, JA). 8: Time required for VOUT to reach 95% of VR (output voltage setting), after VSHDN is switched from 0 to VIN. TEMPERATURE CHARACTERISTICS Electrical Specifications: Unless otherwise noted, VDD = +2.7V to +6.0V and VSS = GND. Parameters Sym Min Typ Max Units Extended Temperature Range TA -40 — +125 °C Operating Temperature Range TA -40 — +125 °C Storage Temperature Range TA -65 — +150 °C JA — 255 — °C/W Conditions Temperature Ranges: Thermal Package Resistances: Thermal Resistance, 5L-SOT-23 2001-2012 Microchip Technology Inc. DS21662F-page 3 TC2014/2015/2185 2.0 TYPICAL PERFORMANCE CURVES Note: The graphs and tables provided following this note are a statistical summary based on a limited number of samples and are provided for informational purposes only. The performance characteristics listed herein are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified operating range (e.g., outside specified power supply range) and therefore outside the warranted range. Note: Unless otherwise indicated, VIN = VR + 1V, IL = 100 µA, COUT = 3.3 µF, SHDN > VIH, TA = +25°C. 63.0 1.820 VIN = 6.0V 57.0 VIN = 2.8V 54.0 51.0 48.0 VIN = 2.8V 1.815 VIN = 6.0V 1.810 1.805 1.800 1.795 VR = 1.8V COUT = 3.3 µF IL = 150 mA 1.790 45.0 Junction Temperature (°C) FIGURE 2-1: Temperature. Supply Current vs. Junction FIGURE 2-4: Temperature. 125 110 95 80 65 50 35 Output Voltage vs. Junction 1.82 TA = -45°C 0.6 TA = +25°C 1.815 Output Voltage (V) TA = +25°C 0.4 0.2 0 TA = +125°C -0.2 VR = 1.8V COUT = 3.3 µF IL = 150 mA -0.4 -0.6 TA = -45°C 1.81 1.805 TA = +125°C 1.8 1.795 VR = 1.8V COUT = 3.3 µF IL = 150 mA 1.79 -0.8 1.785 5.2 5.6 6 2.8 3.2 3.6 Supply Voltage (V) 125 110 95 80 65 50 35 20 5 -10 -25 1.790 -40 5.2 5.6 6 Junction Temperature (°C) Output Voltage vs. Junction IL = 150 mA IL = 100 mA IL = 50 mA IL = 20 mA Note: Dropout Voltage is not a tested parameter for 1.8V. VIN(min) ! 2.7V 125 1.795 DS21662F-page 4 4.8 VR = 1.8V COUT = 3.3 μF 5 VIN = 6.0V 1.800 FIGURE 2-3: Temperature. 4.4 Output Voltage vs. Supply -10 VIN = 2.8V 0.45 0.40 0.35 0.30 0.25 0.20 0.15 0.10 0.05 0.00 -25 1.805 VR = 1.8V COUT = 3.3 µF IL = 0.1 mA FIGURE 2-5: Voltage. -40 1.810 Load Regulation vs. Supply Dropout Voltage (V) FIGURE 2-2: Voltage. 4 Supply Voltage (V) 110 4.8 95 4.4 80 4 65 3.6 50 3.2 35 2.8 20 Load Regulation (%) 5 Junction Temperature (°C) 0.8 Output Voltage (V) 20 -10 -40 125 110 95 80 65 50 35 20 5 -10 -25 -40 1.785 -25 IDD (µA) Output Voltage (V) VR = 1.8V COUT = 3.3 µF 60.0 Junction Temperature (°C) FIGURE 2-6: Dropout Voltage vs. Junction Temperature. 2001-2012 Microchip Technology Inc. TC2014/2015/2185 Note: Unless otherwise indicated, VIN = VR + 1V, IL = 100 µA, COUT = 3.3 µF, SHDN > VIH, TA = +25°C. 2.705 2.680 Temperature (°C) FIGURE 2-7: Temperature. Supply Current vs. Junction FIGURE 2-10: Temperature. 125 Output Voltage vs. Junction 2.705 0.3 TA = +25°C 0.1 -0.1 TA = +125°C VR = 2.7V COUT = 3.3 µF IL = 150 mA -0.3 TA = +25°C 2.7 TA = -45°C Output Voltage (V) 2.695 2.69 2.68 2.675 2.67 -0.5 TA = -45°C 2.685 VR = 2.7V COUT = 3.3 µF IL = 150 mA TA = +125°C 2.665 3.7 4 4.3 4.6 4.9 5.2 5.5 3.7 5.8 4 4.3 FIGURE 2-8: Voltage. Load Regulation vs. Supply FIGURE 2-11: Voltage. 0.160 Dropout Voltage (V) VIN = 6.0V VIN = 3.7V VR = 2.7V COUT = 3.3 µF IL = 0.1 mA 4.9 5.2 5.5 5.8 Output Voltage vs. Supply VR = 2.7V COUT = 3.3 µF IL = 150 mA 0.120 IL = 100 mA 0.080 IL = 50 mA 0.040 IL = 20 mA Junction Temperature (°C) FIGURE 2-9: Temperature. Output Voltage vs. Junction 2001-2012 Microchip Technology Inc. 125 110 95 80 65 50 35 5 -10 -25 -40 125 95 110 80 65 50 35 20 5 -10 -25 0.000 -40 2.690 2.688 2.686 2.684 2.682 2.680 2.678 2.676 2.674 2.672 2.670 4.6 Supply Voltage (V) Supply Voltage (V) 20 Load Regulation (%) 95 Junction Temperature (°C) 0.5 Output Voltage (V) 110 VR = 2.7V COUT = 3.3 µF IL = 150 mA -40 125 95 110 80 65 50 35 20 -10 5 2.665 -25 44.0 -40 2.670 80 2.675 46.0 65 48.0 2.685 35 50.0 VIN = 6.0V 2.690 20 VIN = 2.8V 52.0 2.695 5 54.0 -10 Output Voltage (V) 56.0 IDD(µA) VIN = 3.7V 2.700 VIN = 6.0V 50 VR = 2.7V COUT = 3.3 µF 58.0 -25 60.0 Junction Temperature (°C) FIGURE 2-12: Dropout Voltage vs. Junction Temperature. DS21662F-page 5 TC2014/2015/2185 Note: Unless otherwise indicated, VIN = VR + 1V, IL = 100 µA, COUT = 3.3 µF, SHDN > VIH, TA = +25°C. 0.12 60 54 51 48 VR = 5.0V COUT = 3.3 µF VR = 5.0V COUT = 3.3 µF IL = 150 mA 0.08 IL = 100 mA 0.06 0.04 IL = 50 mA 0.02 Junction Temperature (°C) FIGURE 2-13: Temperature. Supply Current vs. Junction Output Voltage (V) 125 110 95 VIN = 3.8V VOUT = 2.8V CIN = 1 µF Ceramic COUT = 1 µF Ceramic Frequency = 1 kHz 4.99 4.98 100mV/DIV IL = 100 mA 80 FIGURE 2-16: Dropout Voltage vs. Junction Temperature. IL = 150 mA 4.97 65 Junction Temperature (°C) 5.01 5.00 50 35 20 5 -10 -25 125 110 95 80 65 50 35 5 20 -10 -25 0.00 -40 45 0.10 -40 IDD (µA) Dropout Voltage (V) VIN = 6.0V 57 VOUT IL = 0.1 mA 4.96 4.95 4.94 VR = 5.0V COUT = 3.3 µF VIN = 6.0V Load Current 150mA Load 100mA 125 110 95 80 65 50 35 20 5 -10 -25 -40 4.93 Junction Temperature (°C) FIGURE 2-14: Temperature. Output Voltage vs. Junction Load Regulation (%) Load Transient Response. VIN = 3.0V VOUT = 2.8V CIN = 1 μF Ceramic COUT = 10 μF Ceramic Frequency = 10 kHz 0.40 IL = 150 mA 0.30 FIGURE 2-17: (COUT = 1 µF). 0.20 0.10 100mV / DIV -0.10 -0.20 -0.30 VOUT IL = 100 mA 0.00 IL = 50 mA VR = 5.0V COUT = 3.3 µF VIN = 6.0 V Load Current 150mA Load 100mA 125 110 95 80 65 50 35 20 5 -10 -25 -40 -0.40 Junction Temperature (°C) FIGURE 2-15: Load Regulation vs. Junction Temperature. DS21662F-page 6 FIGURE 2-18: (COUT = 10 µF). Load Transient Response. 2001-2012 Microchip Technology Inc. TC2014/2015/2185 Note: Unless otherwise indicated, VIN = VR + 1V, IL = 100 µA, COUT = 3.3 µF, SHDN > VIH, TA = +25°C. Line Transient Response. VOUT 100mV/DIV 150mA 100mA VIN = 3.105V VOUT = 3.006V CIN = 1 μF Ceramic COUT = 10 μF Ceramic RLOAD = 20 Ω FIGURE 2-22: Power Supply Ripple Rejection (dB) FIGURE 2-19: (COUT = 1 µF). 0 -10 VIN = 4.0V VINAC = 100 mV VOUTDC = 3.0V -30 IOUT = 150 mA -40 IOUT = 100 mA -50 -60 IOUT = 50 mA -70 Power Supply Ripple Rejection (dB) Shutdown Delay Time. 2001-2012 Microchip Technology Inc. 100 1k 1000 10k 100k 100000 1M 10000 100000 0 Frequency (Hz) FIGURE 2-23: PSRR vs. Frequency (COUT = 1 µF Ceramic). 0 -10 VIN = 4.0V VINAC = 100 mV VOUTDC = 3.0V COUT = 10 µF Ceramic CBYPASS = 0.01 µF Ceramic -20 -30 IOUT = 150 mA -40 IOUT = 100 mA -50 -60 -70 10 10 FIGURE 2-21: COUT = 1µF Ceramic CBYPASS = 0.01 µF Ceramic -20 10 FIGURE 2-20: Load Transient Response in Dropout. (COUT = 10 µF). Wake-Up Response. 100 1k 1000 10k 100k 100000 1M 10000 100000 0 Frequency (Hz) FIGURE 2-24: PSRR vs. Frequency (COUT = 10 µF Ceramic). DS21662F-page 7 TC2014/2015/2185 0 -10 -20 -30 VIN = 4.0V VINAC = 100 mV VOUTDC = 3.0V CBYPASS = 0 µF -40 -50 CBYPASS = 0.01 µF -60 10 10.000 COUT = 10 µF Tantalum IOUT = 150 mA Noise (µV/Hz) Power Supply Ripple Rejection (dB) Note: Unless otherwise indicated, VIN = VR + 1V, IL = 100 µA, COUT = 3.3 µF, SHDN > VIH, TA = +25°C. VIN = 4.0V VOUTDC = 3.0V IOUT = 100 µA CBYPASS = 470 pF 1 1.000 0.1 0.100 COUT = 1 µF COUT = 10 µF 0.10 0.010 -70 10 10 100 100 1k 1000 10k 100k 100000 1M 10000 100000 0 0.001 10 Frequency (Hz) FIGURE 2-25: PSRR vs. Frequency (COUT = 10 µF Tantalum). DS21662F-page 8 FIGURE 2-26: 100 100 1k 1000 10k 100000 100k 100000 1M 10000 0 Frequency (Hz) Output Noise vs. Frequency. 2001-2012 Microchip Technology Inc. TC2014/2015/2185 3.0 PIN DESCRIPTIONS The descriptions of the pins are described in Table 3-1. TABLE 3-1: Pin No. PIN FUNCTION TABLE Symbol Description 1 VIN 2 GND 3 SHDN Shutdown control input 4 Bypass Reference bypass input 5 VOUT 3.1 Shutdown Control Input (SHDN) The regulator is fully enabled when a logic-high is applied to SHDN. The regulator enters shutdown when a logic-low is applied to this input. During shutdown, the output voltage falls to zero and the supply current is reduced to 0.5 µA (max). Unregulated supply input Ground terminal Regulated voltage output Unregulated Supply Input (VIN) Connect the unregulated input supply to the VIN pin. If there is a large distance between the input supply and the LDO regulator, some input capacitance is necessary for proper operation. A 1 µF capacitor, connected from VIN to ground, is recommended for most applications. 3.2 3.3 Ground Terminal (GND) 3.4 Reference Bypass Input (Bypass) Connecting a low-value ceramic capacitor to Bypass will further reduce output voltage noise and improve the Power Supply Ripple Rejection (PSRR) performance of the LDO. Typical values from 470 pF to 0.01 µF are suggested. While smaller and larger values can be used, these affect the speed at which the LDO output voltage rises when input power is applied. The larger the bypass capacitor, the slower the output voltage will rise. 3.5 Regulated Voltage Output (VOUT) Connect the output load to VOUT of the LDO. Also connect one side of the LDO output de-coupling capacitor as close as possible to the VOUT pin. Connect the unregulated input supply ground return to GND. Also connect one side of the 1 µF typical input decoupling capacitor close to this pin and one side of the output capacitor COUT to this pin. 2001-2012 Microchip Technology Inc. DS21662F-page 9 TC2014/2015/2185 4.0 DETAILED DESCRIPTION 4.1 Bypass Input The TC2014, TC2015 and TC2185 are precision fixedoutput voltage regulators (if an adjustable version is needed, see the TC1070, TC1071 and TC1187 (DS21353) data sheet). Unlike bipolar regulators, the TC2014, TC2015 and TC2185 supply current does not increase with load current. In addition, the LDO’s output voltage is stable using 1 µF of ceramic or tantalum capacitance over the entire specified input voltage range and output current range. A 0.01 µF ceramic capacitor, connected from the Bypass input to ground, reduces noise present on the internal reference, which, in turn, significantly reduces output noise. If output noise is not a concern, this input may be left unconnected. Larger capacitor values may be used, but the result is a longer time period to rated output voltage when power is initially applied. Figure 4-1 shows a typical application circuit. The regulator is enabled anytime the shutdown input (SHDN) is at or above VIH, and disabled (shutdown) when SHDN is at or below VIL. SHDN may be controlled by a CMOS logic gate or I/O port of a microcontroller. If the SHDN input is not required, it should be connected directly to the input supply. While in shutdown, the supply current decreases to 0.05 µA (typical) and VOUT falls to zero volts. A 1 µF (min) capacitor from VOUT to ground is required. The output capacitor should have an Effective Series Resistance (ESR) of 0.01 to 5 for VOUT 2.5V, and 0.05. to 5 for VOUT < 2.5V. Ceramic, tantalum or aluminum electrolytic capacitors can be used. When using ceramic capacitors, X5R and X7R dielectric material are recommended due to their stable tolerance over temperature. However, other dielectrics can be used as long as the minimum output capacitance is maintained. 1 + VOUT VIN VOUT + 1 µF 1 µF Battery 4.3 5 + 2 3 GND TC2014 TC2015 TC2185 SHDN Bypass 4.2 4 Output Capacitor Input Capacitor A 1 µF capacitor should be connected from VIN to GND if there is more than 10 inches of wire between the regulator and this AC filter capacitor, or if a battery is used as the power source. Aluminum electrolytic or tantalum capacitors can be used (since many aluminum electrolytic capacitors freeze at approximately -30°C, solid tantalum are recommended for applications operating below -25°C). When operating from sources other than batteries, supply-noise rejection and transient response can be improved by increasing the value of the input and output capacitors and employing passive filtering techniques. 0.01 µF Reference Bypass Cap (Optional) Shutdown Control (from Power Control Logic) FIGURE 4-1: DS21662F-page 10 Typical Application Circuit. 2001-2012 Microchip Technology Inc. TC2014/2015/2185 5.0 THERMAL CONSIDERATIONS 5.1 Thermal Shutdown Integrated thermal protection circuitry shuts the regulator off when the die temperature exceeds approximately 160°C. The regulator remains off until the die temperature cools to approximatley 150°C. 5.2 The PD equation can be used in conjunction with the PDMAX equation to ensure that regulator thermal operation is within limits. For example: Given: P D VINMAX – V OUTMIN I LMAX = Worst-case actual power dissipation VINMAX = Maximum voltage on VIN VOUTMIN = Minimum regulator output voltage ILMAX = Maximum output (load) current The maximum allowable power dissipation (PDMAX) is a function of the maximum ambient temperature (TAMAX), the maximum allowable die temperature (TJMAX) (+125°C) and the thermal resistance from junction-to-air (JA). The 5-Pin SOT-23A package has a JA of approximately 220°C/Watt when mounted on a typical two-layer FR4 dielectric copper-clad PC board. EQUATION 5-2: T JMAX – T AMAX P DMAX = ------------------------------------- JA = 2.7V – 2.5% TJMAX = +125°C TAMAX = +55°C 1. Actual power dissipation 2. Maximum allowable dissipation Actual power dissipation: PD = V INMAX – V OUTMIN I LMAX Where: PD VOUTMIN Find: The following equation is used to calculate worst-case power dissipation. EQUATION 5-1: = 3.0V +10% ILOADMAX = 40 mA Power Dissipation The amount of power the regulator dissipates is primarily a function of input voltage, output voltage and output current. VINMAX = 3.0 1.1 – 2.7 0.975 40 10 –3 = 26.7mW Maximum allowable power dissipation: T JMAX – T AMAX P DMAX = ------------------------------------- JA 125 – 55 = --------------------220 = 318mW In this example, the TC2014 dissipates a maximum of only 26.7 mW; far below the allowable limit of 318 mW. In a similar manner, the PD and PDMAX equations can be used to calculate maximum current and/or input voltage limits. 5.3 Layout Considerations Where all terms are previously defined. The primary path of heat conduction out of the package is via the package leads. Therefore, layouts having a ground plane, wide traces at the pads and wide power supply bus lines combine to lower JA and, therefore, increase the maximum allowable power dissipation limit. 2001-2012 Microchip Technology Inc. DS21662F-page 11 TC2014/2015/2185 6.0 PACKAGING INFORMATION 6.1 Package Marking Information TABLE 6-1: & represents part number code + temperature range and voltage 6.2 PART NUMBER CODE AND TEMPERATURE RANGE (V) TC2014 TC2015 TC2185 1.8 PA RA UA 2.5 PB RB UB 2.6 PH RH UH 2.7 PC RC UC 2.8 PD RD UD 2.85 PE RE UE 3.0 PF RF UF 3.3 PG RG UG 5.0 PJ RJ UJ represents year and 2-month period code represents lot ID number Taping Form Component Taping Orientation for 5-Pin SOT-23A (EIAJ SC-74A) Devices User Direction of Feed Device Marking W PIN 1 P Standard Reel Component Orientation for 713 Suffix Device (Mark Right Side Up) Carrier Tape, Number of Components Per Reel and Reel Size: Package 5-Pin SOT-23A DS21662F-page 12 Carrier Width (W) Pitch (P) Part Per Full Reel Reel Size 8 mm 4 mm 3000 7 in. 2001-2012 Microchip Technology Inc. TC2014/2015/2185 5-Lead Plastic Small Outline Transistor (OT) (SOT23) Note: For the most current package drawings, please see the Microchip Packaging Specification located at http://www.microchip.com/packaging E E1 p B p1 n D 1 c A L A1 INCHES* Units Dimension Limits MIN Pitch .038 Outside lead pitch (basic) p1 .075 Overall Height MILLIMETERS NOM n p Number of Pins A2 MAX MIN NOM 5 MAX 5 0.95 1.90 A .035 .046 .057 0.90 1.18 Molded Package Thickness A2 .035 .043 .051 0.90 1.10 1.45 1.30 Standoff A1 .000 .003 .006 0.00 0.08 0.15 3.00 Overall Width E .102 .110 .118 2.60 2.80 Molded Package Width E1 .059 .064 .069 1.50 1.63 1.75 Overall Length D .110 .116 .122 2.80 2.95 3.10 Foot Length L f .014 .022 0.35 Foot Angle Lead Thickness c .004 Lead Width B a .014 Mold Draft Angle Top Mold Draft Angle Bottom b .018 0 5 .006 .017 10 0.45 0 0.55 5 .008 0.09 0.15 .020 0.35 0.43 10 0.20 0.50 0 5 10 0 5 10 0 5 10 0 5 10 * Controlling Parameter Notes: Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed .005" (0.127mm) per side. EIAJ Equivalent: SC-74A Revised 09-12-05 Drawing No. C04-091 2001-2012 Microchip Technology Inc. DS21662F-page 13 TC2014/2015/2185 NOTES: DS21662F-page 14 2001-2012 Microchip Technology Inc. TC2014/2015/2185 APPENDIX A: REVISION HISTORY Revision F (December 2012) • Added a note to each package outline drawing. Revision E (May 2006) • Page 1: Added overtemperature to bullet for overcurrent protection in features and general description verbiage. • Page 3: Added Thermal Shutdown die Temperature to electrical characteristics table. • Page 3: Added Thermal Characteristics Table. • Page 5: Added new section 5.1 and new verbiage. • Page 13: Updated package outline drawing. Revision D (November 2004) • Page 2: Changed Absolute Maximum Ratings from 6.5V to 7.0V. • Packaging Information: Added package codes for 2.6V and 5.0V options. • Product Identification System: Added 2.6V and 5.0V to Output voltage options. Revision C (December 2002) • Numerous changes Revision B (May 2002) • Numerous changes Revision A (May 2001) • Original Release of this Document. 2001-2012 Microchip Technology Inc. DS21662F-page 15 TC2014/2015/2185 NOTES: DS21662F-page 16 2001-2012 Microchip Technology Inc. TC2014/2015/2185 PRODUCT IDENTIFICATION SYSTEM To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office. PART NO. -XX X XXXX Device Output Voltage Temperature Range Package Device: TC2014: TC2015: TC2185: 50 mA LDO with Shutdown and VREF Bypass 100 mA LDO with Shutdown and VREF Bypass 150 mA LDO with Shutdown and VREF Bypass Output Voltage: XX XX XX XX XX XX XX XX XX = = = = = = = = = Temperature Range: V = -40°C to +125°C Package: CTTR = Plastic Small Outline Transistor (SOT-23), 5-lead, Tape and Reel 1.8V 2.5V 2.6V 2.7V 2.8V 2.85V 3.0V 3.3V 5.0V 2001-2012 Microchip Technology Inc. Examples: a) TC2014-1.8VCTTR: 5LD SOT-23-A, 1.8V, Tape and Reel. b) TC2014-2.85VCTTR: 5LD SOT-23-A, 2.85V, Tape and Reel. c) TC2014-3.3VCTTR: 5LD SOT-23-A, 3.3V, Tape and Reel. a) TC2015-1.8VCTTR: 5LD SOT-23-A, 1.8V, Tape and Reel. b) TC2015-2.85VCTTR: 5LD SOT-23-A, 2.85V, Tape and Reel. c) TC2015-3.0VCTTR: 5LD SOT-23-A, 3.0V, Tape and Reel. a) TC2185-1.8VCTTR: 5LD SOT-23-A, 1.8V, Tape and Reel. b) TC2185-2.8VCTTR: 5LD SOT-23-A, 2.8V, Tape and Reel. DS21662F-page 17 TC2014/2015/2185 NOTES: DS21662F-page 18 2001-2012 Microchip Technology Inc. Note the following details of the code protection feature on Microchip devices: • Microchip products meet the specification contained in their particular Microchip Data Sheet. • Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the intended manner and under normal conditions. • There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip’s Data Sheets. Most likely, the person doing so is engaged in theft of intellectual property. • Microchip is willing to work with the customer who is concerned about the integrity of their code. • Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not mean that we are guaranteeing the product as “unbreakable.” Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our products. Attempts to break Microchip’s code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act. Information contained in this publication regarding device applications and the like is provided only for your convenience and may be superseded by updates. It is your responsibility to ensure that your application meets with your specifications. MICROCHIP MAKES NO REPRESENTATIONS OR WARRANTIES OF ANY KIND WHETHER EXPRESS OR IMPLIED, WRITTEN OR ORAL, STATUTORY OR OTHERWISE, RELATED TO THE INFORMATION, INCLUDING BUT NOT LIMITED TO ITS CONDITION, QUALITY, PERFORMANCE, MERCHANTABILITY OR FITNESS FOR PURPOSE. Microchip disclaims all liability arising from this information and its use. Use of Microchip devices in life support and/or safety applications is entirely at the buyer’s risk, and the buyer agrees to defend, indemnify and hold harmless Microchip from any and all damages, claims, suits, or expenses resulting from such use. No licenses are conveyed, implicitly or otherwise, under any Microchip intellectual property rights. Trademarks The Microchip name and logo, the Microchip logo, dsPIC, FlashFlex, KEELOQ, KEELOQ logo, MPLAB, PIC, PICmicro, PICSTART, PIC32 logo, rfPIC, SST, SST Logo, SuperFlash and UNI/O are registered trademarks of Microchip Technology Incorporated in the U.S.A. and other countries. FilterLab, Hampshire, HI-TECH C, Linear Active Thermistor, MTP, SEEVAL and The Embedded Control Solutions Company are registered trademarks of Microchip Technology Incorporated in the U.S.A. Silicon Storage Technology is a registered trademark of Microchip Technology Inc. in other countries. Analog-for-the-Digital Age, Application Maestro, BodyCom, chipKIT, chipKIT logo, CodeGuard, dsPICDEM, dsPICDEM.net, dsPICworks, dsSPEAK, ECAN, ECONOMONITOR, FanSense, HI-TIDE, In-Circuit Serial Programming, ICSP, Mindi, MiWi, MPASM, MPF, MPLAB Certified logo, MPLIB, MPLINK, mTouch, Omniscient Code Generation, PICC, PICC-18, PICDEM, PICDEM.net, PICkit, PICtail, REAL ICE, rfLAB, Select Mode, SQI, Serial Quad I/O, Total Endurance, TSHARC, UniWinDriver, WiperLock, ZENA and Z-Scale are trademarks of Microchip Technology Incorporated in the U.S.A. and other countries. SQTP is a service mark of Microchip Technology Incorporated in the U.S.A. GestIC and ULPP are registered trademarks of Microchip Technology Germany II GmbH & Co. & KG, a subsidiary of Microchip Technology Inc., in other countries. All other trademarks mentioned herein are property of their respective companies. © 2001-2012, Microchip Technology Incorporated, Printed in the U.S.A., All Rights Reserved. Printed on recycled paper. ISBN: 9781620768884 QUALITY MANAGEMENT SYSTEM CERTIFIED BY DNV == ISO/TS 16949 == 2001-2012 Microchip Technology Inc. Microchip received ISO/TS-16949:2009 certification for its worldwide headquarters, design and wafer fabrication facilities in Chandler and Tempe, Arizona; Gresham, Oregon and design centers in California and India. The Company’s quality system processes and procedures are for its PIC® MCUs and dsPIC® DSCs, KEELOQ® code hopping devices, Serial EEPROMs, microperipherals, nonvolatile memory and analog products. In addition, Microchip’s quality system for the design and manufacture of development systems is ISO 9001:2000 certified. DS21662F-page 19 Worldwide Sales and Service AMERICAS ASIA/PACIFIC ASIA/PACIFIC EUROPE Corporate Office 2355 West Chandler Blvd. Chandler, AZ 85224-6199 Tel: 480-792-7200 Fax: 480-792-7277 Technical Support: http://www.microchip.com/ support Web Address: www.microchip.com Asia Pacific Office Suites 3707-14, 37th Floor Tower 6, The Gateway Harbour City, Kowloon Hong Kong Tel: 852-2401-1200 Fax: 852-2401-3431 India - Bangalore Tel: 91-80-3090-4444 Fax: 91-80-3090-4123 India - New Delhi Tel: 91-11-4160-8631 Fax: 91-11-4160-8632 Austria - Wels Tel: 43-7242-2244-39 Fax: 43-7242-2244-393 Denmark - Copenhagen Tel: 45-4450-2828 Fax: 45-4485-2829 India - Pune Tel: 91-20-2566-1512 Fax: 91-20-2566-1513 France - Paris Tel: 33-1-69-53-63-20 Fax: 33-1-69-30-90-79 Japan - Osaka Tel: 81-6-6152-7160 Fax: 81-6-6152-9310 Germany - Munich Tel: 49-89-627-144-0 Fax: 49-89-627-144-44 Atlanta Duluth, GA Tel: 678-957-9614 Fax: 678-957-1455 Boston Westborough, MA Tel: 774-760-0087 Fax: 774-760-0088 Chicago Itasca, IL Tel: 630-285-0071 Fax: 630-285-0075 Cleveland Independence, OH Tel: 216-447-0464 Fax: 216-447-0643 Dallas Addison, TX Tel: 972-818-7423 Fax: 972-818-2924 Detroit Farmington Hills, MI Tel: 248-538-2250 Fax: 248-538-2260 Indianapolis Noblesville, IN Tel: 317-773-8323 Fax: 317-773-5453 Los Angeles Mission Viejo, CA Tel: 949-462-9523 Fax: 949-462-9608 Santa Clara Santa Clara, CA Tel: 408-961-6444 Fax: 408-961-6445 Toronto Mississauga, Ontario, Canada Tel: 905-673-0699 Fax: 905-673-6509 Australia - Sydney Tel: 61-2-9868-6733 Fax: 61-2-9868-6755 China - Beijing Tel: 86-10-8569-7000 Fax: 86-10-8528-2104 China - Chengdu Tel: 86-28-8665-5511 Fax: 86-28-8665-7889 China - Chongqing Tel: 86-23-8980-9588 Fax: 86-23-8980-9500 Netherlands - Drunen Tel: 31-416-690399 Fax: 31-416-690340 Korea - Daegu Tel: 82-53-744-4301 Fax: 82-53-744-4302 Spain - Madrid Tel: 34-91-708-08-90 Fax: 34-91-708-08-91 China - Hangzhou Tel: 86-571-2819-3187 Fax: 86-571-2819-3189 Korea - Seoul Tel: 82-2-554-7200 Fax: 82-2-558-5932 or 82-2-558-5934 China - Hong Kong SAR Tel: 852-2943-5100 Fax: 852-2401-3431 Malaysia - Kuala Lumpur Tel: 60-3-6201-9857 Fax: 60-3-6201-9859 China - Nanjing Tel: 86-25-8473-2460 Fax: 86-25-8473-2470 Malaysia - Penang Tel: 60-4-227-8870 Fax: 60-4-227-4068 China - Qingdao Tel: 86-532-8502-7355 Fax: 86-532-8502-7205 Philippines - Manila Tel: 63-2-634-9065 Fax: 63-2-634-9069 China - Shanghai Tel: 86-21-5407-5533 Fax: 86-21-5407-5066 Singapore Tel: 65-6334-8870 Fax: 65-6334-8850 China - Shenyang Tel: 86-24-2334-2829 Fax: 86-24-2334-2393 Taiwan - Hsin Chu Tel: 886-3-5778-366 Fax: 886-3-5770-955 China - Shenzhen Tel: 86-755-8864-2200 Fax: 86-755-8203-1760 Taiwan - Kaohsiung Tel: 886-7-213-7828 Fax: 886-7-330-9305 China - Wuhan Tel: 86-27-5980-5300 Fax: 86-27-5980-5118 Taiwan - Taipei Tel: 886-2-2508-8600 Fax: 886-2-2508-0102 China - Xian Tel: 86-29-8833-7252 Fax: 86-29-8833-7256 Thailand - Bangkok Tel: 66-2-694-1351 Fax: 66-2-694-1350 UK - Wokingham Tel: 44-118-921-5869 Fax: 44-118-921-5820 China - Xiamen Tel: 86-592-2388138 Fax: 86-592-2388130 China - Zhuhai Tel: 86-756-3210040 Fax: 86-756-3210049 DS21662F-page 20 Italy - Milan Tel: 39-0331-742611 Fax: 39-0331-466781 Japan - Tokyo Tel: 81-3-6880- 3770 Fax: 81-3-6880-3771 11/29/12 2001-2012 Microchip Technology Inc.