NVD5863NL D

NVD5863NL
Power MOSFET
60 V, 7.1 mW, 82 A, Single N−Channel
Features
•
•
•
•
•
Low RDS(on) to Minimize Conduction Losses
High Current Capability
Avalanche Energy Specified
AEC−Q101 Qualified
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain Current RqJC (Note 1)
Power Dissipation RqJC
(Note 1)
Continuous Drain Current RqJA (Notes 1 & 2)
Power Dissipation RqJA
(Notes 1 & 2)
Pulsed Drain Current
TC = 25°C
Steady
State
Symbol
Value
Unit
VDSS
60
V
VGS
"20
V
ID
82
A
TC = 100°C
TC = 25°C
PD
TA = 25°C
Steady
State
RDS(on)
V(BR)DSS
7.1 mW @ 10 V
60 V
ID
D
W
96
S
A
14.9
11.5
4
3.1
TA = 25°C, tp = 10 ms
IDM
500
A
3
TA = 25°C
IDmaxpkg
60
A
TJ, Tstg
−55 to
175
°C
DPAK
CASE 369AA
STYLE 2
IS
82
A
EAS
265
mJ
TL
260
°C
TA = 100°C
Current Limited by
Package (Note 3)
Operating Junction and Storage Temperature
Source Current (Body Diode)
Single Pulse Drain−to−Source Avalanche
Energy (TJ = 25°C, VDD = 50 V, VGS = 10 V,
IL(pk) = 23 A, L = 1.0 mH, RG = 25 W)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
W
1.6
1 2
MARKING DIAGRAMS
& PIN ASSIGNMENT
4
Drain
YWW
58
63LG
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
2
1 Drain 3
Gate Source
THERMAL RESISTANCE MAXIMUM RATINGS
Symbol
Value
Unit
Junction−to−Case − Steady State (Drain)
Parameter
RqJC
1.6
°C/W
Junction−to−Ambient − Steady State (Note 2)
RqJA
48
1. The entire application environment impacts the thermal resistance values
shown, they are not constants and are only valid for the particular conditions
noted.
2. Surface−mounted on FR4 board using a 650 mm2, 2 oz. Cu pad.
3. Continuous DC current rating. Maximum current for pulses as long as 1
second are higher but are dependent on pulse duration and duty cycle.
© Semiconductor Components Industries, LLC, 2011
December, 2011 − Rev. 1
N−Channel
PD
TA = 25°C
82 A
9.0 mW @ 4.5 V
48
TA = 100°C
ID
G
58
TC = 100°C
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1
Y
WW
5863L
G
= Year
= Work Week
= Device Code
= Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
Publication Order Number:
NVD5863NL/D
NVD5863NL
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Symbol
Test Condition
Min
Drain−to−Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = 250 mA
60
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/TJ
Parameter
Typ
Max
Unit
OFF CHARACTERISTICS
Zero Gate Voltage Drain Current
50
IDSS
Gate−to−Source Leakage Current
V
VGS = 0 V,
VDS = 48 V
mV/°C
TJ = 25°C
1.0
TJ = 150°C
100
IGSS
VDS = 0 V, VGS = ±20 V
VGS(TH)
VGS = VDS, ID = 250 mA
mA
±100
nA
3.0
V
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
Negative Threshold Temperature
Coefficient
VGS(TH)/TJ
Drain−to−Source On Resistance
RDS(on)
1.0
6.7
mV/°C
VGS = 10 V, ID = 41 A
5.6
7.1
VGS = 4.5 V, ID = 41 A
7.2
9.0
mW
CHARGES, CAPACITANCES AND GATE RESISTANCES
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
pF
3850
VGS = 0 V, f = 1.0 MHz,
VDS = 25 V
350
VGS = 4.5 V, VDS = 48 V,
ID = 41 A
36
220
Total Gate Charge
QG(TOT)
Total Gate Charge
QG(TOT)
Threshold Gate Charge
QG(TH)
Gate−to−Source Charge
QGS
Gate−to−Drain Charge
QGD
19.4
td(on)
12.8
nC
70
VGS = 10 V, VDS = 48 V,
ID = 41 A
3.7
12.3
SWITCHING CHARACTERISTICS (Note 5)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
tr
td(off)
VGS = 10 V, VDD = 48 V,
ID = 41 A, RG = 2.5 W
tf
ns
24.4
37.6
55
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
Reverse Recovery Time
VSD
TJ = 25°C
0.88
TJ = 150°C
0.73
tRR
Charge Time
ta
Discharge Time
tb
Reverse Recovery Charge
VGS = 0 V,
IS = 41 A
31
VGS = 0 V, dIs/dt = 100 A/ms,
IS = 41 A
QRR
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2
V
ns
18
13
31
4. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
5. Switching characteristics are independent of operating junction temperatures.
1.2
nC
NVD5863NL
TYPICAL CHARACTERISTICS
4.5 V
125
4.2 V
100
75
3.9 V
50
3.6 V
25
3.3 V
0
1
2
3
4
150
125
100
75
TJ = 25°C
50
25
0
5
TJ = 125°C
2
TJ = −55°C
3
4
5
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
0.030
0.010
ID = 41 A
TJ = 25°C
0.025
TJ = 25°C
0.009
0.020
0.008
0.015
VGS = 4.5 V
0.007
0.010
0.006
0.005
0.000
VDS ≥ 10 V
175
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
TJ = 25°C
150
0
RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED)
4.8 V
VGS = 10 V
0.005
3
4
5
6
7
8
9
10
VGS, GATE−TO−SOURCE VOLTAGE (V)
0.004
10
20
40
50
60
70
80
Figure 4. On−Resistance vs. Drain Current
100000
2.0
1.8
30
ID, DRAIN CURRENT (A)
Figure 3. On−Resistance vs. Gate Voltage
VGS = 0 V
ID = 41 A
VGS = 4.5 V
IDSS, LEAKAGE (nA)
ID, DRAIN CURRENT (A)
175
200
5V
VGS = 10 V
ID, DRAIN CURRENT (A)
200
1.6
1.4
1.2
1.0
10000
TJ = 150°C
TJ = 125°C
1000
0.8
0.6
−50
−25
0
25
50
75
100
125
150 175
100
10
TJ, JUNCTION TEMPERATURE (°C)
20
30
40
50
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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3
60
NVD5863NL
TYPICAL CHARACTERISTICS
Ciss
C, CAPACITANCE (pF)
4000
3500
3000
2500
2000
1500
1000
Coss
500
0
Crss
0
10
20
30
40
50
60
VGS, GATE−TO−SOURCE VOLTAGE (V)
10
VGS = 0 V
TJ = 25°C
9
8
7
VGS
80
70
60
6
50
5
QGS
4
QDS
40
3
30
2
20
ID = 82 A 10
TJ = 25°C
0
60
70
1
0
0
10
20
30
40
50
Qg, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source & Drain−to−Source
vs. Total Charge
1000
80
VDD = 48 V
ID = 41 A
VGS = 4.5 V
IS, SOURCE CURRENT (A)
tf
td(off)
tr
td(on)
10
VGS = 0 V
TJ = 25°C
70
100
t, TIME (ns)
90
VDS
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
1
100
QT
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
5000
4500
1
10
60
50
40
30
20
10
0
0.40
100
0.50
0.60
0.70
0.80
0.90
1.00
RG, GATE RESISTANCE (W)
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
1000
300
100
10 ms
100 ms
10
VGS = 10 V
SINGLE PULSE
TC = 25°C
1
0.1
1 ms
10 ms
dc
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
0.1
1
10
100
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
AVALANCHE ENERGY (mJ)
ID, DRAIN CURRENT (A)
ID = 23 A
250
200
150
100
50
0
25
50
75
100
125
150
TJ, STARTING JUNCTION TEMPERATURE
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
175
Figure 12. Maximum Avalanche Energy versus
Starting Junction Temperature
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NVD5863NL
TYPICAL CHARACTERISTICS
RqJC(t) (°C/W) EFFECTIVE TRANSIENT
THERMAL RESISTANCE
10
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
0.000001
SINGLE PULSE
0.00001
0.0001
0.001
0.01
0.1
t, PULSE TIME (s)
Figure 13. Thermal Response
ORDERING INFORMATION
Order Number
NVD5863NLT4G
Package
Shipping†
DPAK
(Pb−Free)
2500 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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NVD5863NL
PACKAGE DIMENSIONS
DPAK
CASE 369AA−01
ISSUE B
A
E
b3
c2
B
Z
D
1
L4
A
4
L3
b2
e
2
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCHES.
3. THERMAL PAD CONTOUR OPTIONAL WITHIN DIMENSIONS b3, L3 and Z.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR BURRS. MOLD
FLASH, PROTRUSIONS, OR GATE BURRS SHALL
NOT EXCEED 0.006 INCHES PER SIDE.
5. DIMENSIONS D AND E ARE DETERMINED AT THE
OUTERMOST EXTREMES OF THE PLASTIC BODY.
6. DATUMS A AND B ARE DETERMINED AT DATUM
PLANE H.
C
H
DETAIL A
3
c
b
0.005 (0.13)
M
H
C
L2
GAUGE
PLANE
C
L
SEATING
PLANE
A1
L1
DETAIL A
ROTATED 905 CW
DIM
A
A1
b
b2
b3
c
c2
D
E
e
H
L
L1
L2
L3
L4
Z
INCHES
MIN
MAX
0.086 0.094
0.000 0.005
0.025 0.035
0.030 0.045
0.180 0.215
0.018 0.024
0.018 0.024
0.235 0.245
0.250 0.265
0.090 BSC
0.370 0.410
0.055 0.070
0.108 REF
0.020 BSC
0.035 0.050
−−− 0.040
0.155
−−−
MILLIMETERS
MIN
MAX
2.18
2.38
0.00
0.13
0.63
0.89
0.76
1.14
4.57
5.46
0.46
0.61
0.46
0.61
5.97
6.22
6.35
6.73
2.29 BSC
9.40 10.41
1.40
1.78
2.74 REF
0.51 BSC
0.89
1.27
−−−
1.01
3.93
−−−
SOLDERING FOOTPRINT*
6.20
0.244
2.58
0.102
5.80
0.228
3.00
0.118
1.60
0.063
6.17
0.243
SCALE 3:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
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NVD5863NL/D