NVD5865NL D

NVD5865NL
Power MOSFET
60 V, 46 A, 16 mW, Single N−Channel
Features
•
•
•
•
•
Low RDS(on) to Minimize Conduction Losses
High Current Capability
Avalanche Energy Specified
AEC−Q101 Qualified
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
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RDS(on)
V(BR)DSS
ID
16 mW @ 10 V
60 V
19 mW @ 4.5 V
46 A
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain Current RqJC (Notes 1 & 3)
Power Dissipation RqJC
(Note 1)
Continuous Drain Current RqJA (Notes 1, 2 &
3)
Power Dissipation RqJA
(Notes 1 & 2)
Pulsed Drain Current
TC = 25°C
Steady
State
Symbol
Value
Unit
VDSS
60
V
VGS
"20
V
ID
46
A
TC = 100°C
TC = 25°C
Steady
State
PD
W
71
36
ID
TA = 100°C
TA = 25°C
A
10
PD
W
3.1
1.5
TA = 25°C, tp = 10 ms
IDM
203
A
TA = 25°C
IDmaxpkg
60
A
TJ, Tstg
−55 to
175
°C
IS
46
A
Single Pulse Drain−to−Source Avalanche
Energy (L = 0.1 mH)
EAS
36
mJ
IAS
27
A
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
TL
260
°C
Operating Junction and Storage Temperature
Source Current (Body Diode)
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol
Value
Unit
Junction−to−Case (Drain) (Note 1)
RqJC
2.1
°C/W
Junction−to−Ambient − Steady State (Note 2)
RqJA
49
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Surface−mounted on FR4 board using a 650 mm2, 2 oz. Cu pad.
3. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
© Semiconductor Components Industries, LLC, 2013
January, 2013 − Rev. 2
S
N−CHANNEL MOSFET
4
7.0
TA = 100°C
Current Limited by
Package (Note 3)
G
33
TC = 100°C
TA = 25°C
D
1
1 2
3
DPAK
CASE 369AA
STYLE 2
MARKING DIAGRAM
& PIN ASSIGNMENT
4
Drain
YWW
V58
65LG
Parameter
2
1 Drain 3
Gate Source
Y
= Year
WW
= Work Week
V5865L = Device Code
G
= Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
Publication Order Number:
NVD5865NL/D
NVD5865NL
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Symbol
Test Condition
Min
Drain−to−Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = 250 mA
60
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/TJ
Parameter
Typ
Max
Unit
OFF CHARACTERISTICS
V
55
TJ = 25°C
Zero Gate Voltage Drain Current
IDSS
Gate−to−Source Leakage Current
IGSS
VDS = 0 V, VGS = ±20 V
VGS(TH)
VGS = VDS, ID = 250 mA
VGS = 0 V,
VDS = 60 V
mV/°C
1.0
TJ = 125°C
mA
100
±100
nA
2.0
V
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
1.0
Negative Threshold Temperature
Coefficient
VGS(TH)/TJ
Drain−to−Source On Resistance
RDS(on)
VGS = 10 V, ID = 19 A
13
16
mW
Drain−to−Source on Resistance
RDS(on)
VGS = 4.5 V, ID = 19 A
16
19
mW
gFS
VDS = 15 V, ID = 19 A
15
S
1400
pF
Forward Transconductance
5.6
mV/°C
CHARGES, CAPACITANCES AND GATE RESISTANCES
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
QG(TOT)
Threshold Gate Charge
QG(TH)
Gate−to−Source Charge
QGS
Gate−to−Drain Charge
Total Gate Charge
Gate Resistance
VGS = 0 V, f = 1.0 MHz,
VDS = 25 V
137
95
29
nC
VGS = 10 V, VDS = 48 V,
ID = 38 A
1.1
VGS = 4.5 V, VDS = 48 V,
ID = 38 A
15
nC
1.3
W
td(on)
8.4
ns
tr
12.4
QGD
QG(TOT)
4
8
RG
SWITCHING CHARACTERISTICS (Note 5)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
td(off)
VGS = 10 V, VDD = 48 V,
ID = 38 A, RG = 2.5 W
tf
26
4.4
DRAIN−SOURCE DIODE CHARACTERISTICS
TJ = 25°C
0.95
TJ = 125°C
0.85
Forward Diode Voltage
VSD
Reverse Recovery Time
tRR
20
Charge Time
ta
13
Discharge Time
tb
Reverse Recovery Charge
VGS = 0 V,
IS = 38 A
VGS = 0 V, dIs/dt = 100 A/ms,
IS = 38 A
QRR
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2
V
ns
7
13
4. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
5. Switching characteristics are independent of operating junction temperatures.
1.2
nC
NVD5865NL
TYPICAL CHARACTERISTICS
80
ID, DRAIN CURRENT (A)
50
3.4 V
3.2 V
30
20
3V
10
2.8 V
1
2
40
30
TJ = 25°C
20
3
4
0
5
TJ = 125°C
1
TJ = −55°C
2
3
4
5
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
0.018
0.030
ID = 38 A
TJ = 25°C
0.025
TJ = 25°C
VGS = 4.5 V
0.016
0.014
0.020
VGS = 10 V
0.012
0.015
0.010
50
10
2.6 V
0
60
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
3.6 V
40
VDS ≥ 10 V
70
TJ = 25°C
4.5 V
60
0
RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED)
3.8 V
2
3
4
5
6
7
8
9
0.010
10
VGS, GATE−TO−SOURCE VOLTAGE (V)
5
10
20
25
30
35
40
Figure 4. On−Resistance vs. Drain Current
10000
2.2
2.0
15
ID, DRAIN CURRENT (A)
Figure 3. On−Resistance vs. Gate Voltage
ID = 38 A
VGS = 10 V
VGS = 0 V
TJ = 150°C
1.8
IDSS, LEAKAGE (nA)
ID, DRAIN CURRENT (A)
70
80
4V
VGS = 10 V
1.6
1.4
1.2
1.0
1000
TJ = 125°C
0.8
0.6
−50
−25
0
25
50
75
100
125
150 175
100
10
TJ, JUNCTION TEMPERATURE (°C)
20
30
40
50
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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3
60
NVD5865NL
TYPICAL CHARACTERISTICS
10
1800
1600
Ciss
C, CAPACITANCE (pF)
1400
VGS, GATE−TO−SOURCE VOLTAGE (V)
VGS = 0 V
TJ = 25°C
1200
1000
800
600
400
200
0
Coss
Crss
0
10
20
30
40
50
60
6
4
Qgs
Qgd
2
0
VDS = 48 V
ID = 38 A
TJ = 25°C
0
5
10
15
20
25
Qg, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source vs. Total Charge
30
40
VDD = 48 V
ID = 38 A
VGS = 10 V
IS, SOURCE CURRENT (A)
td(off)
tr
10
VGS = 0 V
35
100
td(on)
tf
1
10
TJ = 25°C
30
25
20
15
10
5
0
0.50 0.55 0.60 0.65 0.70 0.75 0.80 0.85 0.90 0.95 1.00
100
RG, GATE RESISTANCE (W)
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
1000
ID, DRAIN CURRENT (A)
t, TIME (ns)
8
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
1000
1
QT
100
VGS = 10 V
SINGLE PULSE
TC = 25°C
100 ms
10 ms
10 ms
1 ms
10
dc
1
0.1
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
0.1
1
10
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
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4
100
NVD5865NL
TYPICAL CHARACTERISTICS
RqJC(t) (°C/W) EFFECTIVE TRANSIENT
THERMAL RESISTANCE
10
Duty Cycle = 0.5
1
0.2
0.1
0.05
0.1
0.02
0.01
SINGLE PULSE
0.01
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
t, PULSE TIME (s)
Figure 12. Thermal Response
ORDERING INFORMATION
Order Number
NVD5865NLT4G
Package
Shipping†
DPAK
(Pb−Free)
2500 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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5
NVD5865NL
PACKAGE DIMENSIONS
DPAK (SINGLE GUAGE)
CASE 369AA
ISSUE B
A
E
b3
c2
B
Z
D
1
L4
A
4
L3
b2
e
2
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCHES.
3. THERMAL PAD CONTOUR OPTIONAL WITHIN DIMENSIONS b3, L3 and Z.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR BURRS. MOLD
FLASH, PROTRUSIONS, OR GATE BURRS SHALL
NOT EXCEED 0.006 INCHES PER SIDE.
5. DIMENSIONS D AND E ARE DETERMINED AT THE
OUTERMOST EXTREMES OF THE PLASTIC BODY.
6. DATUMS A AND B ARE DETERMINED AT DATUM
PLANE H.
C
H
DETAIL A
3
c
b
0.005 (0.13)
M
H
C
L2
GAUGE
PLANE
C
L
SEATING
PLANE
A1
L1
DETAIL A
ROTATED 905 CW
2.58
0.102
5.80
0.228
3.00
0.118
1.60
0.063
INCHES
MIN
MAX
0.086 0.094
0.000 0.005
0.025 0.035
0.030 0.045
0.180 0.215
0.018 0.024
0.018 0.024
0.235 0.245
0.250 0.265
0.090 BSC
0.370 0.410
0.055 0.070
0.108 REF
0.020 BSC
0.035 0.050
−−− 0.040
0.155
−−−
MILLIMETERS
MIN
MAX
2.18
2.38
0.00
0.13
0.63
0.89
0.76
1.14
4.57
5.46
0.46
0.61
0.46
0.61
5.97
6.22
6.35
6.73
2.29 BSC
9.40 10.41
1.40
1.78
2.74 REF
0.51 BSC
0.89
1.27
−−−
1.01
3.93
−−−
STYLE 2:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
SOLDERING FOOTPRINT*
6.20
0.244
DIM
A
A1
b
b2
b3
c
c2
D
E
e
H
L
L1
L2
L3
L4
Z
6.17
0.243
SCALE 3:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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6
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For additional information, please contact your local
Sales Representative
NVD5865NL/D