NVD5865NL Power MOSFET 60 V, 46 A, 16 mW, Single N−Channel Features • • • • • Low RDS(on) to Minimize Conduction Losses High Current Capability Avalanche Energy Specified AEC−Q101 Qualified These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant http://onsemi.com RDS(on) V(BR)DSS ID 16 mW @ 10 V 60 V 19 mW @ 4.5 V 46 A MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current RqJC (Notes 1 & 3) Power Dissipation RqJC (Note 1) Continuous Drain Current RqJA (Notes 1, 2 & 3) Power Dissipation RqJA (Notes 1 & 2) Pulsed Drain Current TC = 25°C Steady State Symbol Value Unit VDSS 60 V VGS "20 V ID 46 A TC = 100°C TC = 25°C Steady State PD W 71 36 ID TA = 100°C TA = 25°C A 10 PD W 3.1 1.5 TA = 25°C, tp = 10 ms IDM 203 A TA = 25°C IDmaxpkg 60 A TJ, Tstg −55 to 175 °C IS 46 A Single Pulse Drain−to−Source Avalanche Energy (L = 0.1 mH) EAS 36 mJ IAS 27 A Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) TL 260 °C Operating Junction and Storage Temperature Source Current (Body Diode) Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. THERMAL RESISTANCE MAXIMUM RATINGS Parameter Symbol Value Unit Junction−to−Case (Drain) (Note 1) RqJC 2.1 °C/W Junction−to−Ambient − Steady State (Note 2) RqJA 49 1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. 2. Surface−mounted on FR4 board using a 650 mm2, 2 oz. Cu pad. 3. Maximum current for pulses as long as 1 second is higher but is dependent on pulse duration and duty cycle. © Semiconductor Components Industries, LLC, 2013 January, 2013 − Rev. 2 S N−CHANNEL MOSFET 4 7.0 TA = 100°C Current Limited by Package (Note 3) G 33 TC = 100°C TA = 25°C D 1 1 2 3 DPAK CASE 369AA STYLE 2 MARKING DIAGRAM & PIN ASSIGNMENT 4 Drain YWW V58 65LG Parameter 2 1 Drain 3 Gate Source Y = Year WW = Work Week V5865L = Device Code G = Pb−Free Package ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. Publication Order Number: NVD5865NL/D NVD5865NL ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Symbol Test Condition Min Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 60 Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/TJ Parameter Typ Max Unit OFF CHARACTERISTICS V 55 TJ = 25°C Zero Gate Voltage Drain Current IDSS Gate−to−Source Leakage Current IGSS VDS = 0 V, VGS = ±20 V VGS(TH) VGS = VDS, ID = 250 mA VGS = 0 V, VDS = 60 V mV/°C 1.0 TJ = 125°C mA 100 ±100 nA 2.0 V ON CHARACTERISTICS (Note 4) Gate Threshold Voltage 1.0 Negative Threshold Temperature Coefficient VGS(TH)/TJ Drain−to−Source On Resistance RDS(on) VGS = 10 V, ID = 19 A 13 16 mW Drain−to−Source on Resistance RDS(on) VGS = 4.5 V, ID = 19 A 16 19 mW gFS VDS = 15 V, ID = 19 A 15 S 1400 pF Forward Transconductance 5.6 mV/°C CHARGES, CAPACITANCES AND GATE RESISTANCES Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge QG(TOT) Threshold Gate Charge QG(TH) Gate−to−Source Charge QGS Gate−to−Drain Charge Total Gate Charge Gate Resistance VGS = 0 V, f = 1.0 MHz, VDS = 25 V 137 95 29 nC VGS = 10 V, VDS = 48 V, ID = 38 A 1.1 VGS = 4.5 V, VDS = 48 V, ID = 38 A 15 nC 1.3 W td(on) 8.4 ns tr 12.4 QGD QG(TOT) 4 8 RG SWITCHING CHARACTERISTICS (Note 5) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time td(off) VGS = 10 V, VDD = 48 V, ID = 38 A, RG = 2.5 W tf 26 4.4 DRAIN−SOURCE DIODE CHARACTERISTICS TJ = 25°C 0.95 TJ = 125°C 0.85 Forward Diode Voltage VSD Reverse Recovery Time tRR 20 Charge Time ta 13 Discharge Time tb Reverse Recovery Charge VGS = 0 V, IS = 38 A VGS = 0 V, dIs/dt = 100 A/ms, IS = 38 A QRR http://onsemi.com 2 V ns 7 13 4. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%. 5. Switching characteristics are independent of operating junction temperatures. 1.2 nC NVD5865NL TYPICAL CHARACTERISTICS 80 ID, DRAIN CURRENT (A) 50 3.4 V 3.2 V 30 20 3V 10 2.8 V 1 2 40 30 TJ = 25°C 20 3 4 0 5 TJ = 125°C 1 TJ = −55°C 2 3 4 5 VDS, DRAIN−TO−SOURCE VOLTAGE (V) VGS, GATE−TO−SOURCE VOLTAGE (V) Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics 0.018 0.030 ID = 38 A TJ = 25°C 0.025 TJ = 25°C VGS = 4.5 V 0.016 0.014 0.020 VGS = 10 V 0.012 0.015 0.010 50 10 2.6 V 0 60 RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) 3.6 V 40 VDS ≥ 10 V 70 TJ = 25°C 4.5 V 60 0 RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) 3.8 V 2 3 4 5 6 7 8 9 0.010 10 VGS, GATE−TO−SOURCE VOLTAGE (V) 5 10 20 25 30 35 40 Figure 4. On−Resistance vs. Drain Current 10000 2.2 2.0 15 ID, DRAIN CURRENT (A) Figure 3. On−Resistance vs. Gate Voltage ID = 38 A VGS = 10 V VGS = 0 V TJ = 150°C 1.8 IDSS, LEAKAGE (nA) ID, DRAIN CURRENT (A) 70 80 4V VGS = 10 V 1.6 1.4 1.2 1.0 1000 TJ = 125°C 0.8 0.6 −50 −25 0 25 50 75 100 125 150 175 100 10 TJ, JUNCTION TEMPERATURE (°C) 20 30 40 50 VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage http://onsemi.com 3 60 NVD5865NL TYPICAL CHARACTERISTICS 10 1800 1600 Ciss C, CAPACITANCE (pF) 1400 VGS, GATE−TO−SOURCE VOLTAGE (V) VGS = 0 V TJ = 25°C 1200 1000 800 600 400 200 0 Coss Crss 0 10 20 30 40 50 60 6 4 Qgs Qgd 2 0 VDS = 48 V ID = 38 A TJ = 25°C 0 5 10 15 20 25 Qg, TOTAL GATE CHARGE (nC) Figure 7. Capacitance Variation Figure 8. Gate−to−Source vs. Total Charge 30 40 VDD = 48 V ID = 38 A VGS = 10 V IS, SOURCE CURRENT (A) td(off) tr 10 VGS = 0 V 35 100 td(on) tf 1 10 TJ = 25°C 30 25 20 15 10 5 0 0.50 0.55 0.60 0.65 0.70 0.75 0.80 0.85 0.90 0.95 1.00 100 RG, GATE RESISTANCE (W) VSD, SOURCE−TO−DRAIN VOLTAGE (V) Figure 9. Resistive Switching Time Variation vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current 1000 ID, DRAIN CURRENT (A) t, TIME (ns) 8 VDS, DRAIN−TO−SOURCE VOLTAGE (V) 1000 1 QT 100 VGS = 10 V SINGLE PULSE TC = 25°C 100 ms 10 ms 10 ms 1 ms 10 dc 1 0.1 RDS(on) LIMIT THERMAL LIMIT PACKAGE LIMIT 0.1 1 10 VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 11. Maximum Rated Forward Biased Safe Operating Area http://onsemi.com 4 100 NVD5865NL TYPICAL CHARACTERISTICS RqJC(t) (°C/W) EFFECTIVE TRANSIENT THERMAL RESISTANCE 10 Duty Cycle = 0.5 1 0.2 0.1 0.05 0.1 0.02 0.01 SINGLE PULSE 0.01 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 t, PULSE TIME (s) Figure 12. Thermal Response ORDERING INFORMATION Order Number NVD5865NLT4G Package Shipping† DPAK (Pb−Free) 2500 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 5 NVD5865NL PACKAGE DIMENSIONS DPAK (SINGLE GUAGE) CASE 369AA ISSUE B A E b3 c2 B Z D 1 L4 A 4 L3 b2 e 2 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCHES. 3. THERMAL PAD CONTOUR OPTIONAL WITHIN DIMENSIONS b3, L3 and Z. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR BURRS. MOLD FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT EXCEED 0.006 INCHES PER SIDE. 5. DIMENSIONS D AND E ARE DETERMINED AT THE OUTERMOST EXTREMES OF THE PLASTIC BODY. 6. DATUMS A AND B ARE DETERMINED AT DATUM PLANE H. C H DETAIL A 3 c b 0.005 (0.13) M H C L2 GAUGE PLANE C L SEATING PLANE A1 L1 DETAIL A ROTATED 905 CW 2.58 0.102 5.80 0.228 3.00 0.118 1.60 0.063 INCHES MIN MAX 0.086 0.094 0.000 0.005 0.025 0.035 0.030 0.045 0.180 0.215 0.018 0.024 0.018 0.024 0.235 0.245 0.250 0.265 0.090 BSC 0.370 0.410 0.055 0.070 0.108 REF 0.020 BSC 0.035 0.050 −−− 0.040 0.155 −−− MILLIMETERS MIN MAX 2.18 2.38 0.00 0.13 0.63 0.89 0.76 1.14 4.57 5.46 0.46 0.61 0.46 0.61 5.97 6.22 6.35 6.73 2.29 BSC 9.40 10.41 1.40 1.78 2.74 REF 0.51 BSC 0.89 1.27 −−− 1.01 3.93 −−− STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN SOLDERING FOOTPRINT* 6.20 0.244 DIM A A1 b b2 b3 c c2 D E e H L L1 L2 L3 L4 Z 6.17 0.243 SCALE 3:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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