NVD5890N Power MOSFET 40 V, 123 A, Single N−Channel DPAK Features • • • • • Low RDS(on) to Minimize Conduction Losses MSL 1/260°C AEC Q101 Qualified and PPAP Capable 100% Avalanche Tested These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant http://onsemi.com V(BR)DSS RDS(on) ID 40 V 3.7 mW @ 10 V 123 A Applications • Motor Drivers • Pump Drivers for Automotive Braking, Steering and Other High D Current Systems MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Symbol Value Unit Drain−to−Source Voltage VDSS 40 V Gate−to−Source Voltage VGS "20 V ID 123 A PD 107 Continuous Drain Current (RqJC) TC = 25°C Power Dissipation (RqJC) TC = 25°C Continuous Drain Current (RqJA) (Note 1) TC = 85°C Steady State tp=10ms Current Limited by Package ID 18.5 4.0 W TA = 25°C IDM 400 A TA = 25°C IDmaxPkg 100 A TJ, Tstg −55 to 175 °C IS 100 A Drain to Source dV/dt dV/dt 6.0 V/ns Single Pulse Drain−to−Source Avalanche Energy (VDD = 32 V, VGS = 10 V, L = 0.3 mH, IL(pk) = 40 A, RG = 25 W) EAS 240 mJ TL 260 °C Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 3 CASE 369C DPAK (Bent Lead) STYLE 2 A 24 PD Source Current (Body Diode) 1 2 W TA = 25°C Operating Junction and Storage Temperature 4 95 TA = 85°C Power Dissipation (RqJA) (Note 1) Pulsed Drain Current TA = 25°C S MARKING DIAGRAMS & PIN ASSIGNMENT 4 Drain YWW 58 90NG Parameter N−Channel G 2 1 Drain 3 Gate Source Y WW 5890N G = Year = Work Week = Device Code = Pb−Free Package ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 6 of this data sheet. © Semiconductor Components Industries, LLC, 2012 January, 2012 − Rev. 1 1 Publication Order Number: NVD5890N/D NVD5890N THERMAL RESISTANCE MAXIMUM RATINGS Symbol Value Unit Junction−to−Case (Drain) Parameter RqJC 1.4 °C/W Junction−to−Ambient − Steady State (Note 1) RqJA 37 Junction−to−Ambient − Steady State (Note 2) RqJA 76 1. Surface−mounted on FR4 board using 650 mm2 pad size, 2 oz Cu. 2. Surface−mounted on FR4 board using 36 mm2 pad size. ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Symbol Test Condition Min Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 40 Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/TJ Parameter Typ Max Unit OFF CHARACTERISTICS Zero Gate Voltage Drain Current IDSS Gate−to−Source Leakage Current V 40 VGS = 0 V, VDS = 40 V mV/°C TJ = 25°C 1.0 TJ = 150°C 100 IGSS VDS = 0 V, VGS = "20 V VGS(TH) VGS = VDS, ID = 250 mA mA "100 nA 3.5 V ON CHARACTERISTICS (Note 3) Gate Threshold Voltage 1.5 Negative Threshold Temperature Coefficient VGS(TH)/TJ Drain−to−Source On Resistance RDS(on) VGS = 10 V, ID = 50 A 2.9 gFS VDS = 15 V, ID = 15 A 16.8 S 4975 pF Forward Transconductance 7.4 mV/°C 3.7 mW CHARGES AND CAPACITANCES Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss VGS = 0 V, f = 1.0 MHz, VDS = 12 V 785 VGS = 0 V, f = 1.0 MHz, VDS = 25 V 4760 490 pF 580 385 Total Gate Charge QG(TOT) 74 Threshold Gate Charge QG(TH) 5.0 Gate−to−Source Charge QGS Gate−to−Drain Charge QGD 16 td(on) 14 VGS = 10 V, VDS = 15 V, ID = 50 A 100 nC 17 SWITCHING CHARACTERISTICS (Note 4) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time tr td(off) VGS = 10 V, VDS = 20 V, ID = 50 A, RG = 2.0 W tf 55 35 7.0 3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%. 4. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 2 ns NVD5890N ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Parameter Symbol Test Condition Min Typ Max Unit V DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time Charge Time Discharge Time Reverse Recovery Charge VSD VGS = 0 V, IS = 50 A TJ = 25°C 0.9 1.2 VGS = 0 V, IS = 20 A TJ = 25°C 0.8 1.0 tRR ta tb 35 VGS = 0 V, dIs/dt = 100 A/ms, IS = 50 A QRR 20 15 40 http://onsemi.com 3 ns nC NVD5890N 300 280 260 240 220 200 180 160 140 120 100 80 60 40 20 0 10 V 6V TJ = 25°C 7V ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) TYPICAL PERFORMANCE CURVES VGS = 5 V 4.5 V 4.2 V 4V 3.8 V 3.6 V 0 1 2 3 4 VDS, DRAIN−TO−SOURCE VOLTAGE (V) 5 300 280 260 240 220 200 180 160 140 120 100 80 60 40 20 0 VDS ≥ 10 V TJ = 25°C TJ = 150°C TJ = −55°C 2 3 4 5 VGS, GATE−TO−SOURCE VOLTAGE (V) 20 Figure 2. Transfer Characteristics RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW) RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW) Figure 1. On−Region Characteristics TJ = 25°C 18 16 14 ID = 50 A 12 10 8 6 4 2 0 3 4 5 6 7 8 9 10 VGS, GATE−TO−SOURCE VOLTAGE (V) 20 16 14 12 VGS = 5 V 10 8 6 VGS = 10 V 4 2 0 40 0 80 120 160 200 240 280 ID, DRAIN CURRENT (A) Figure 4. On−Resistance vs. Drain Current and Gate Voltage 2.0 1000 VGS = 0 V VGS = 10 V ID = 50 A IDSS, LEAKAGE (mA) RDS(on), NORMALIZED DRAIN−TO−SOURCE RESISTANCE (mW) TJ = 25°C 18 Figure 3. On−Resistance vs. Drain Current 1.75 6 1.5 1.25 1.0 100 TJ = 175°C TJ = 150°C 10 0.75 0.5 −50 −25 0 25 50 75 100 125 150 175 1 0 TJ, JUNCTION TEMPERATURE (°C) 4 8 12 16 20 24 28 32 36 VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage http://onsemi.com 4 40 NVD5890N C, CAPACITANCE (pF) 6000 VGS = 0 V TJ = 25°C f = 1 MHz Ciss 5000 4000 3000 2000 Coss 1000 0 Crss 0 5 10 15 20 25 30 35 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0 0 20 VGS, GATE−TO−SOURCE VOLTAGE (V) 7000 40 QT QDS QGS VDS = 15 V ID = 50 A TJ = 25°C 10 30 20 40 50 60 70 5 0 80 Qg, TOTAL GATE CHARGE (nC) Figure 8. Gate−to−Source and Drain−to−Source Voltage vs. Total Charge Figure 7. Capacitance Variation 100 1000 VGS = 10 V VDD = 20 V ID = 50 A IS, SOURCE CURRENT (A) td(off) tf tr 100 td(on) 10 1 10 100 TJ = 150°C 10 100°C 1 0.1 0.3 0.4 0.5 25°C 0.6 0.7 TJ = −55°C 0.8 0.9 1.0 1.1 RG, GATE RESISTANCE (W) VSD, SOURCE−TO−DRAIN VOLTAGE (V) Figure 9. Resistive Switching Time Variation vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current 1000 I D, DRAIN CURRENT (AMPS) t, TIME (ns) VGS 10 VDS, DRAIN−TO−SOURCE VOLTAGE (V) 1 15 VDS VDS, DRAIN−TO−SOURCE VOLTAGE (V) TYPICAL PERFORMANCE CURVES 10 ms 100 100 ms 10 1 0.1 VGS ≤ 20 V SINGLE PULSE TC = 25°C 1 ms 10 ms RDS(on) LIMIT THERMAL LIMIT PACKAGE LIMIT 1 dc 10 VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) Figure 11. Maximum Rated Forward Biased Safe Operating Area http://onsemi.com 5 100 1.2 NVD5890N r(t), EFFECTIVE TRANSIENT THERMAL RESPONSE (°C/W) TYPICAL PERFORMANCE CURVES 10 1.0 D = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 SINGLE PULSE 0.001 0.000001 0.00001 RqJC = 1.4°C/W Steady State 0.0001 0.001 0.01 t, TIME (s) 0.1 1 10 100 1000 Figure 12. Thermal Response ORDERING INFORMATION Order Number NVD5890NT4G Package Shipping† DPAK (Pb−Free) 2500/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 6 NVD5890N PACKAGE DIMENSIONS DPAK CASE 369C ISSUE D A E b3 c2 B Z D 1 L4 A 4 L3 b2 e 2 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCHES. 3. THERMAL PAD CONTOUR OPTIONAL WITHIN DIMENSIONS b3, L3 and Z. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR BURRS. MOLD FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT EXCEED 0.006 INCHES PER SIDE. 5. DIMENSIONS D AND E ARE DETERMINED AT THE OUTERMOST EXTREMES OF THE PLASTIC BODY. 6. DATUMS A AND B ARE DETERMINED AT DATUM PLANE H. C H DETAIL A 3 DIM A A1 b b2 b3 c c2 D E e H L L1 L2 L3 L4 Z c b 0.005 (0.13) M H C L2 GAUGE PLANE C L SEATING PLANE A1 L1 DETAIL A ROTATED 905 CW INCHES MIN MAX 0.086 0.094 0.000 0.005 0.025 0.035 0.030 0.045 0.180 0.215 0.018 0.024 0.018 0.024 0.235 0.245 0.250 0.265 0.090 BSC 0.370 0.410 0.055 0.070 0.108 REF 0.020 BSC 0.035 0.050 −−− 0.040 0.155 −−− MILLIMETERS MIN MAX 2.18 2.38 0.00 0.13 0.63 0.89 0.76 1.14 4.57 5.46 0.46 0.61 0.46 0.61 5.97 6.22 6.35 6.73 2.29 BSC 9.40 10.41 1.40 1.78 2.74 REF 0.51 BSC 0.89 1.27 −−− 1.01 3.93 −−− SOLDERING FOOTPRINT* 6.20 0.244 2.58 0.102 5.80 0.228 3.00 0.118 1.60 0.063 6.17 0.243 SCALE 3:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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