NVMFS5885NL Power MOSFET 60 V, 15 mW, 39 A, Single N−Channel Features • • • • • • Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses NVMFS5885NLWF − Wettable Flanks Product AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free and are RoHS Compliant http://onsemi.com V(BR)DSS RDS(ON) MAX 15 mW @ 10 V 60 V Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current RYJ−mb (Notes 1, 2, 3) Power Dissipation RYJ−mb (Notes 1, 2, 3) Continuous Drain Current RqJA (Notes 1 & 3) Power Dissipation RqJA (Notes 1 & 3) Pulsed Drain Current Tmb = 25°C Steady State Symbol Value Unit VDSS 60 V VGS "20 V ID 39 A Tmb = 100°C Tmb = 25°C 28 PD Tmb = 100°C TA = 25°C Steady State TA = 100°C TA = 25°C Operating Junction and Storage Temperature Source Current (Body Diode) Single Pulse Drain−to−Source Avalanche Energy (TJ = 25°C, VDD = 50 V, VGS = 10 V, IL(pk) = 18 A, L = 0.3 mH, RG = 25 W) Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) G (4) W 54 S (1,2,3) A 10.2 PD 1.8 IDM 179 A TJ, Tstg −55 to 175 °C IS 46 A EAS 49 mJ TL 260 °C THERMAL RESISTANCE MAXIMUM RATINGS Junction−to−Mounting Board (top) − Steady State (Notes 2, 3) Junction−to−Ambient − Steady State (Note 3) MARKING DIAGRAM W 3.7 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Parameter N−CHANNEL MOSFET 7.2 TA = 100°C TA = 25°C, tp = 10 ms D (5,6) 27 ID 39 A 21 mW @ 4.5 V MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter ID MAX Symbol Value Unit RYJ−mb 2.8 °C/W RqJA 41 D 1 DFN5 (SO−8FL) CASE 488AA STYLE 1 A Y W ZZ S S S G D XXXXXX AYWZZ D D = Assembly Location = Year = Work Week = Lot Traceability ORDERING INFORMATION See detailed ordering, marking and shipping information in the package dimensions section on page 5 of this data sheet. 1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. 2. Psi (Y) is used as required per JESD51−12 for packages in which substantially less than 100% of the heat flows to single case surface. 3. Surface−mounted on FR4 board using a 650 mm2, 2 oz. Cu pad. © Semiconductor Components Industries, LLC, 2013 May, 2013 − Rev. 3 1 Publication Order Number: NVMFS5885NL/D NVMFS5885NL ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Parameter Symbol Test Condition Min V(BR)DSS VGS = 0 V, ID = 250 mA 60 Typ Max Unit OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage Zero Gate Voltage Drain Current IDSS Gate−to−Source Leakage Current VGS = 0 V, VDS = 60 V V TJ = 25°C 1.0 TJ = 125°C 10 mA IGSS VDS = 0 V, VGS = ± 20 V Gate Threshold Voltage VGS(TH) VGS = VDS, ID = 250 mA 2.5 V Drain−to−Source On Resistance RDS(on) VGS = 10 V, ID = 15 A 11.6 15 mW VGS = 4.5 V, ID = 15 A 15.2 21 VGS = 0 V, f = 1 MHz, VDS = 25 V 1340 ±100 nA ON CHARACTERISTICS (Note 4) 1.5 CHARGES AND CAPACITANCES Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss 85 QG(TOT) 12 Total Gate Charge Threshold Gate Charge QG(TH) Gate−to−Source Charge QGS Gate−to−Drain Charge QGD Total Gate Charge QG(TOT) VGS = 4.5 V, VDS = 48 V, ID = 15 A pF 125 1.1 nC 4.0 6.3 VGS = 10 V, VDS = 48 V, ID = 15 A 21 nC SWITCHING CHARACTERISTICS (Note 5) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time td(ON) tr td(OFF) 10 VGS = 4.5 V, VDS = 48 V, ID = 15 A, RG = 2.5 W tf 64 ns 18 52 DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time VSD TJ = 25°C 0.8 TJ = 125°C 0.7 tRR Charge Time ta Discharge Time tb Reverse Recovery Charge VGS = 0 V, IS = 15 A 1.2 V 20 VGS = 0 V, dIs/dt = 100 A/ms, IS = 15 A QRR 15 16 4. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%. 5. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 2 ns 5.0 nC NVMFS5885NL TYPICAL CHARACTERISTICS 80 80 TJ = 25°C 4.0 V 50 40 3.6 V 30 20 VGS = 3.2 V 10 0 1 2 3 4 40 20 TJ = −55°C 2 3 4 5 Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics 0.020 0.015 0.010 3 4 5 6 7 8 9 VGS, GATE−TO−SOURCE VOLTAGE (V) 0.020 TJ = 25°C 0.018 VGS = 4.5 V 0.016 0.014 VGS = 10 V 0.012 0.010 0.008 10 5 10 15 20 25 30 35 40 ID, DRAIN CURRENT (A) Figure 3. On−Resistance vs. Gate−to−Source Voltage Figure 4. On−Resistance vs. Drain Current and Gate Voltage 10000 2.6 VGS = 0 V VGS = 15 V ID = 4.5 A 1.8 1.4 1.0 0.6 TJ = 125°C VGS, GATE−TO−SOURCE VOLTAGE (V) 0.025 2.2 TJ = 25°C 30 0 5 ID = 15 A TJ = 25°C 2 50 VDS, DRAIN−TO−SOURCE VOLTAGE (V) 0.030 0.005 60 10 IDSS, LEAKAGE (nA) RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) 0 RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) ID, DRAIN CURRENT (A) 10 V 60 VDS ≥ 10 V 70 4.5 V RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) ID, DRAIN CURRENT (A) 70 6.5 V 50 25 0 25 50 75 100 125 150 175 TJ = 150°C 1000 100 TJ = 125°C 10 20 30 40 50 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage http://onsemi.com 3 60 NVMFS5885NL 1600 C, CAPACITANCE (pF) 1400 VGS = 0 V TJ = 25°C Ciss 1200 1000 800 600 400 Coss 200 0 Crss 0 10 20 30 40 50 60 VGS, GATE−TO−SOURCE VOLTAGE (V) TYPICAL CHARACTERISTICS 10 QT 8 6 Qgs 4 VDS = 48 A ID = 15 A TJ = 25°C 2 0 0 4 6 8 10 12 14 16 18 20 Qg, TOTAL GATE CHARGE (nC) Figure 7. Capacitance Variation Figure 8. Gate−to−Source Voltage vs. Total Charge 22 40 VGS = 0 V TJ = 25°C 100 IS, SOURCE CURRENT (A) 35 tr tf td(off) td(on) 10 VDD = 48 V VGS = 4.5 V ID = 15 A 1 10 100 30 25 20 15 10 5 0 0.50 0.55 0.60 0.65 0.70 0.75 0.80 0.85 0.90 0.95 RG, GATE RESISTANCE (W) VSD, SOURCE−TO−DRAIN VOLTAGE (V) Figure 9. Resistive Switching Time Variation vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current 1000 VGS = 10 V 100 ms Single Pulse 1 ms TC = 25°C 10 ms 100 ID, DRAIN CURRENT (A) t, TIME (ns) 2 VDS, DRAIN−TO−SOURCE VOLTAGE (V) 1000 1 Qgd 10 ms 10 1 0.1 0.01 dc RDS(on) Limit Thermal Limit Package Limit 0.1 1 10 VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 11. Maximum Rated Forward Biased Safe Operating Area http://onsemi.com 4 100 NVMFS5885NL TYPICAL CHARACTERISTICS RqJA(t) (°C/W) EFFECTIVE TRANSIENT THERMAL RESISTANCE 100 Duty Cycle = 0.5 10 0.2 0.1 0.05 1 0.02 0.01 0.1 Single Pulse 0.01 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 PULSE TIME (sec) Figure 12. Thermal Response DEVICE ORDERING INFORMATION Marking Package Shipping† NVMFS5885NLT1G V5885L DFN5 (Pb−Free) 1500 / Tape & Reel NVMFS5885NLWFT1G 5885LW DFN5 (Pb−Free) 1500 / Tape & Reel NVMFS5885NLT3G V5885L DFN5 (Pb−Free) 5000 / Tape & Reel NVMFS5885NLWFT3G 5885LW DFN5 (Pb−Free) 5000 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 5 NVMFS5885NL PACKAGE DIMENSIONS DFN5 5x6, 1.27P (SO−8FL) CASE 488AA ISSUE H 2X NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH PROTRUSIONS OR GATE BURRS. 0.20 C D 2 A B D1 2X 0.20 C 4X E1 2 3 q E 2 1 c A1 4 TOP VIEW C 3X e 0.10 C SIDE VIEW 8X DETAIL A 3X 0.05 c 4X 1.270 0.750 MILLIMETERS MIN NOM MAX 0.90 1.00 1.10 0.00 −−− 0.05 0.33 0.41 0.51 0.23 0.28 0.33 5.15 BSC 4.70 4.90 5.10 3.80 4.00 4.20 6.15 BSC 5.70 5.90 6.10 3.45 3.65 3.85 1.27 BSC 0.51 0.61 0.71 1.20 1.35 1.50 0.51 0.61 0.71 0.05 0.17 0.20 3.00 3.40 3.80 0_ −−− 12 _ STYLE 1: PIN 1. SOURCE 2. SOURCE 3. SOURCE 4. GATE 5. DRAIN SOLDERING FOOTPRINT* b C A B SEATING PLANE DETAIL A A 0.10 C 0.10 DIM A A1 b c D D1 D2 E E1 E2 e G K L L1 M q 4X 1.000 e/2 L 1 0.965 4 K 1.330 2X 0.905 2X PIN 5 (EXPOSED PAD) G E2 L1 M 0.495 4.530 3.200 0.475 D2 2X 1.530 BOTTOM VIEW 4.560 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: [email protected] N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81−3−5817−1050 http://onsemi.com 6 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative NVMFS5885NL/D