NVMFS5885NL D

NVMFS5885NL
Power MOSFET
60 V, 15 mW, 39 A, Single N−Channel
Features
•
•
•
•
•
•
Small Footprint (5x6 mm) for Compact Design
Low RDS(on) to Minimize Conduction Losses
Low Capacitance to Minimize Driver Losses
NVMFS5885NLWF − Wettable Flanks Product
AEC−Q101 Qualified and PPAP Capable
These Devices are Pb−Free and are RoHS Compliant
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V(BR)DSS
RDS(ON) MAX
15 mW @ 10 V
60 V
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain Current RYJ−mb (Notes 1,
2, 3)
Power Dissipation
RYJ−mb (Notes 1, 2, 3)
Continuous Drain Current RqJA (Notes 1 &
3)
Power Dissipation
RqJA (Notes 1 & 3)
Pulsed Drain Current
Tmb = 25°C
Steady
State
Symbol
Value
Unit
VDSS
60
V
VGS
"20
V
ID
39
A
Tmb = 100°C
Tmb = 25°C
28
PD
Tmb = 100°C
TA = 25°C
Steady
State
TA = 100°C
TA = 25°C
Operating Junction and Storage Temperature
Source Current (Body Diode)
Single Pulse Drain−to−Source Avalanche
Energy (TJ = 25°C, VDD = 50 V, VGS = 10 V,
IL(pk) = 18 A, L = 0.3 mH, RG = 25 W)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
G (4)
W
54
S (1,2,3)
A
10.2
PD
1.8
IDM
179
A
TJ, Tstg
−55 to
175
°C
IS
46
A
EAS
49
mJ
TL
260
°C
THERMAL RESISTANCE MAXIMUM RATINGS
Junction−to−Mounting Board (top) − Steady
State (Notes 2, 3)
Junction−to−Ambient − Steady State (Note 3)
MARKING
DIAGRAM
W
3.7
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
Parameter
N−CHANNEL MOSFET
7.2
TA = 100°C
TA = 25°C, tp = 10 ms
D (5,6)
27
ID
39 A
21 mW @ 4.5 V
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
ID MAX
Symbol
Value
Unit
RYJ−mb
2.8
°C/W
RqJA
41
D
1
DFN5
(SO−8FL)
CASE 488AA
STYLE 1
A
Y
W
ZZ
S
S
S
G
D
XXXXXX
AYWZZ
D
D
= Assembly Location
= Year
= Work Week
= Lot Traceability
ORDERING INFORMATION
See detailed ordering, marking and shipping information in the
package dimensions section on page 5 of this data sheet.
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Psi (Y) is used as required per JESD51−12 for packages in which
substantially less than 100% of the heat flows to single case surface.
3. Surface−mounted on FR4 board using a 650 mm2, 2 oz. Cu pad.
© Semiconductor Components Industries, LLC, 2013
May, 2013 − Rev. 3
1
Publication Order Number:
NVMFS5885NL/D
NVMFS5885NL
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Test Condition
Min
V(BR)DSS
VGS = 0 V, ID = 250 mA
60
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Zero Gate Voltage Drain Current
IDSS
Gate−to−Source Leakage Current
VGS = 0 V,
VDS = 60 V
V
TJ = 25°C
1.0
TJ = 125°C
10
mA
IGSS
VDS = 0 V, VGS = ± 20 V
Gate Threshold Voltage
VGS(TH)
VGS = VDS, ID = 250 mA
2.5
V
Drain−to−Source On Resistance
RDS(on)
VGS = 10 V, ID = 15 A
11.6
15
mW
VGS = 4.5 V, ID = 15 A
15.2
21
VGS = 0 V, f = 1 MHz,
VDS = 25 V
1340
±100
nA
ON CHARACTERISTICS (Note 4)
1.5
CHARGES AND CAPACITANCES
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
85
QG(TOT)
12
Total Gate Charge
Threshold Gate Charge
QG(TH)
Gate−to−Source Charge
QGS
Gate−to−Drain Charge
QGD
Total Gate Charge
QG(TOT)
VGS = 4.5 V, VDS = 48 V, ID = 15 A
pF
125
1.1
nC
4.0
6.3
VGS = 10 V, VDS = 48 V, ID = 15 A
21
nC
SWITCHING CHARACTERISTICS (Note 5)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
td(ON)
tr
td(OFF)
10
VGS = 4.5 V, VDS = 48 V,
ID = 15 A, RG = 2.5 W
tf
64
ns
18
52
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
Reverse Recovery Time
VSD
TJ = 25°C
0.8
TJ = 125°C
0.7
tRR
Charge Time
ta
Discharge Time
tb
Reverse Recovery Charge
VGS = 0 V,
IS = 15 A
1.2
V
20
VGS = 0 V, dIs/dt = 100 A/ms,
IS = 15 A
QRR
15
16
4. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
5. Switching characteristics are independent of operating junction temperatures.
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2
ns
5.0
nC
NVMFS5885NL
TYPICAL CHARACTERISTICS
80
80
TJ = 25°C
4.0 V
50
40
3.6 V
30
20
VGS = 3.2 V
10
0
1
2
3
4
40
20
TJ = −55°C
2
3
4
5
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
0.020
0.015
0.010
3
4
5
6
7
8
9
VGS, GATE−TO−SOURCE VOLTAGE (V)
0.020
TJ = 25°C
0.018
VGS = 4.5 V
0.016
0.014
VGS = 10 V
0.012
0.010
0.008
10
5
10
15
20
25
30
35
40
ID, DRAIN CURRENT (A)
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
10000
2.6
VGS = 0 V
VGS = 15 V
ID = 4.5 A
1.8
1.4
1.0
0.6
TJ = 125°C
VGS, GATE−TO−SOURCE VOLTAGE (V)
0.025
2.2
TJ = 25°C
30
0
5
ID = 15 A
TJ = 25°C
2
50
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
0.030
0.005
60
10
IDSS, LEAKAGE (nA)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
0
RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED)
ID, DRAIN CURRENT (A)
10 V
60
VDS ≥ 10 V
70
4.5 V
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
ID, DRAIN CURRENT (A)
70
6.5 V
50
25
0
25
50
75
100
125
150
175
TJ = 150°C
1000
100
TJ = 125°C
10
20
30
40
50
TJ, JUNCTION TEMPERATURE (°C)
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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3
60
NVMFS5885NL
1600
C, CAPACITANCE (pF)
1400
VGS = 0 V
TJ = 25°C
Ciss
1200
1000
800
600
400
Coss
200
0
Crss
0
10
20
30
40
50
60
VGS, GATE−TO−SOURCE VOLTAGE (V)
TYPICAL CHARACTERISTICS
10
QT
8
6
Qgs
4
VDS = 48 A
ID = 15 A
TJ = 25°C
2
0
0
4
6
8
10
12
14
16
18
20
Qg, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source Voltage vs. Total
Charge
22
40
VGS = 0 V
TJ = 25°C
100
IS, SOURCE CURRENT (A)
35
tr
tf
td(off)
td(on)
10
VDD = 48 V
VGS = 4.5 V
ID = 15 A
1
10
100
30
25
20
15
10
5
0
0.50 0.55 0.60 0.65 0.70 0.75 0.80 0.85 0.90 0.95
RG, GATE RESISTANCE (W)
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
1000
VGS = 10 V
100 ms
Single Pulse
1 ms
TC = 25°C
10 ms
100
ID, DRAIN CURRENT (A)
t, TIME (ns)
2
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
1000
1
Qgd
10 ms
10
1
0.1
0.01
dc
RDS(on) Limit
Thermal Limit
Package Limit
0.1
1
10
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
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4
100
NVMFS5885NL
TYPICAL CHARACTERISTICS
RqJA(t) (°C/W) EFFECTIVE TRANSIENT
THERMAL RESISTANCE
100
Duty Cycle = 0.5
10
0.2
0.1
0.05
1 0.02
0.01
0.1
Single Pulse
0.01
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
PULSE TIME (sec)
Figure 12. Thermal Response
DEVICE ORDERING INFORMATION
Marking
Package
Shipping†
NVMFS5885NLT1G
V5885L
DFN5
(Pb−Free)
1500 / Tape & Reel
NVMFS5885NLWFT1G
5885LW
DFN5
(Pb−Free)
1500 / Tape & Reel
NVMFS5885NLT3G
V5885L
DFN5
(Pb−Free)
5000 / Tape & Reel
NVMFS5885NLWFT3G
5885LW
DFN5
(Pb−Free)
5000 / Tape & Reel
Device
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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5
NVMFS5885NL
PACKAGE DIMENSIONS
DFN5 5x6, 1.27P
(SO−8FL)
CASE 488AA
ISSUE H
2X
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION D1 AND E1 DO NOT INCLUDE
MOLD FLASH PROTRUSIONS OR GATE
BURRS.
0.20 C
D
2
A
B
D1
2X
0.20 C
4X
E1
2
3
q
E
2
1
c
A1
4
TOP VIEW
C
3X
e
0.10 C
SIDE VIEW
8X
DETAIL A
3X
0.05
c
4X
1.270
0.750
MILLIMETERS
MIN
NOM
MAX
0.90
1.00
1.10
0.00
−−−
0.05
0.33
0.41
0.51
0.23
0.28
0.33
5.15 BSC
4.70
4.90
5.10
3.80
4.00
4.20
6.15 BSC
5.70
5.90
6.10
3.45
3.65
3.85
1.27 BSC
0.51
0.61
0.71
1.20
1.35
1.50
0.51
0.61
0.71
0.05
0.17
0.20
3.00
3.40
3.80
0_
−−−
12 _
STYLE 1:
PIN 1. SOURCE
2. SOURCE
3. SOURCE
4. GATE
5. DRAIN
SOLDERING FOOTPRINT*
b
C A B
SEATING
PLANE
DETAIL A
A
0.10 C
0.10
DIM
A
A1
b
c
D
D1
D2
E
E1
E2
e
G
K
L
L1
M
q
4X
1.000
e/2
L
1
0.965
4
K
1.330
2X
0.905
2X
PIN 5
(EXPOSED PAD)
G
E2
L1
M
0.495
4.530
3.200
0.475
D2
2X
1.530
BOTTOM VIEW
4.560
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
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NVMFS5885NL/D