NVTFS5826NL D

NVTFS5826NL
Power MOSFET
60 V, 24 mW, 20 A, Single N−Channel
Features
•
•
•
•
•
•
Small Footprint (3.3 x 3.3 mm) for Compact Design
Low RDS(on) to Minimize Conduction Losses
Low Capacitance to Minimize Driver Losses
NVTFS5826NLWF − Wettable Flanks Product
AEC−Q101 Qualified and PPAP Capable
These Devices are Pb−Free and are RoHS Compliant
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V(BR)DSS
RDS(on) MAX
24 mW @ 10 V
60 V
32 mW @ 4.5 V
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Symbol
Value
Unit
Drain−to−Source Voltage
VDSS
60
V
Gate−to−Source Voltage
VGS
±20
V
ID
20
A
Parameter
Continuous Drain Current RYJ−mb (Notes 1,
2, 3, 4)
Power Dissipation
RYJ−mb (Notes 1, 2, 3)
Continuous Drain Current RqJA (Notes 1 &
3, 4)
Power Dissipation
RqJA (Notes 1, 3)
Pulsed Drain Current
Tmb = 25°C
Steady
State
Tmb = 100°C
Tmb = 25°C
14
PD
TA = 25°C
Steady
State
Operating Junction and Storage Temperature
Source Current (Body Diode)
Single Pulse Drain−to−Source Avalanche
Energy (TJ = 25°C, VDD = 24 V, VGS = 10 V,
IL(pk) = 20 A, L = 0.1 mH, RG = 25 W)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
S (1, 2, 3)
A
MARKING DIAGRAM
5.4
PD
W
3.2
TA = 100°C
TA = 25°C, tp = 10 ms
G (4)
7.6
TA = 100°C
TA = 25°C
N−Channel
D (5 − 8)
11
ID
20 A
W
22
Tmb = 100°C
ID MAX
1.6
IDM
127
A
TJ, Tstg
−55 to
+175
°C
IS
18
A
EAS
20
mJ
TL
260
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1
WDFN8
(m8FL)
CASE 511AB
XXXX
A
Y
WW
G
1
S
S
S
G
XXXX
AYWWG
G
D
D
D
D
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering, marking and shipping information in the
package dimensions section on page 5 of this data sheet.
THERMAL RESISTANCE MAXIMUM RATINGS (Note 1)
Parameter
Junction−to−Mounting Board (top) − Steady
State (Note 2 and 3)
Junction−to−Ambient − Steady State (Note 3)
Symbol
Value
Unit
RYJ−mb
6.8
°C/W
RqJA
47
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Psi (Y) is used as required per JESD51−12 for packages in which
substantially less than 100% of the heat flows to single case surface.
3. Surface−mounted on FR4 board using a 650 mm2, 2 oz. Cu pad.
4. Continuous DC current rating. Maximum current for pulses as long as 1
second is higher but is dependent on pulse duration and duty cycle.
© Semiconductor Components Industries, LLC, 2013
May, 2013 − Rev. 2
1
Publication Order Number:
NVTFS5826NL/D
NVTFS5826NL
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Test Condition
Min
V(BR)DSS
VGS = 0 V, ID = 250 mA
60
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Zero Gate Voltage Drain Current
IDSS
Gate−to−Source Leakage Current
VGS = 0 V,
VDS = 60 V
V
TJ = 25°C
1.0
TJ = 125°C
10
mA
IGSS
VDS = 0 V, VGS = "20 V
Gate Threshold Voltage
VGS(TH)
VGS = VDS, ID = 250 mA
2.5
V
Drain−to−Source On Resistance
RDS(on)
VGS = 10 V, ID = 10 A
19
24
mW
VGS = 4.5 V, ID = 10 A
25
32
gFS
VDS = 15 V, ID = 5 A
8
S
Input Capacitance
Ciss
850
pF
Output Capacitance
Coss
VGS = 0 V, f = 1.0 MHz,
VDS = 25 V
"100
nA
ON CHARACTERISTICS (Note 5)
Forward Transconductance
1.5
CHARGES AND CAPACITANCES
Reverse Transfer Capacitance
85
Crss
50
Total Gate Charge
QG(TOT)
8.3
nC
Threshold Gate Charge
QG(TH)
1
nC
Gate−to−Source Charge
QGS
Gate−to−Drain Charge
QGD
Total Gate Charge
QG(TOT)
VGS = 4.5 V, VDS = 48 V, ID = 10 A
3
4
VGS = 10 V, VDS = 48 V, ID = 10 A
16
nC
9
ns
SWITCHING CHARACTERISTICS (Note 6)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
td(on)
tr
td(off)
VGS = 4.5 V, VDS = 48 V,
ID = 10 A
tf
29
14
21
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
Reverse Recovery Time
VSD
TJ = 25°C
0.8
TJ = 125°C
0.7
tRR
Charge Time
ta
Discharge Time
tb
Reverse Recovery Charge
VGS = 0 V,
IS = 10 A
18
VGS = 0 V, dlS/dt = 100 A/ms,
IS = 10 A
QRR
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2
V
ns
14
4
17
5. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
6. Switching characteristics are independent of operating junction temperatures.
1.2
nC
NVTFS5826NL
TYPICAL CHARACTERISTICS
50
60
10 V
40
3.8 V
30
3.6 V
3.4 V
20
3.2 V
10
3.0 V
2.8 V
0
1
2
3
30
20
TJ = 25°C
10
TJ = 125°C
0
5
4
40
1
2
3
4
5
VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
0.040
0.050
ID = 10 A
TJ = 25°C
0.040
TJ = 25°C
0.030
0.030
VGS = 4.5 V
VGS = 10 V
0.020
0.020
0.010
TJ = −55°C
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
0
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
4.0 V
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
50
VDS ≥ 10 V
TJ = 25°C
VGS = 4.5 V
2
4
6
8
0.010
10
VGS, GATE−TO−SOURCE VOLTAGE (V)
2.00
15
20
25
30
35
40
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
100000
VGS = 0 V
ID = 10 A
VGS = 10 V
IDSS, LEAKAGE (nA)
RDS(on), DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)
2.20
10
ID, DRAIN CURRENT (A)
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
2.40
5
1.80
10000
1.60
1.40
1.20
1.00
TJ = 150°C
1000
TJ = 125°C
0.80
0.60
−50
−25
0
25
50
75
100 125
TJ, JUNCTION TEMPERATURE (°C)
150
175
100
10
Figure 5. On−Resistance Variation with
Temperature
20
30
40
50
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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3
60
NVTFS5826NL
TYPICAL CHARACTERISTICS
10
1200
C, CAPACITANCE (pF)
1000
VGS, GATE−TO−SOURCE VOLTAGE
(V)
VGS = 0 V
TJ = 25°C
Ciss
800
600
400
Coss
200
0
Crss
0
10
20
30
40
50
DRAIN−TO−SOURCE VOLTAGE (V)
60
QT
8
6
4
Qgs
VDS = 48 V
ID = 10 A
TJ = 25°C
2
0
0
4
8
12
Qg, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation
40
IS, SOURCE CURRENT (A)
t, TIME (ns)
VDD = 48 V
ID = 10 A
VGS = 4.5 V
100.0
td(off)
tr
td(on)
tf
10.0
1
10
RG, GATE RESISTANCE (W)
100
VGS = 0 V
TJ = 25°C
30
20
10
0
0.5
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
1.0
Figure 10. Diode Forward Voltage vs. Current
100 ms
10 ms
1 ms
10 ms
1
RDS(on) Limit
Thermal Limit
Package Limit
0.1
dc
1
10
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
EAS, SINGLE PULSE DRAIN−TO−
SOURCE AVALANCHE ENERGY (mJ)
ID, DRAIN CURRENT (A)
VGS = 10 V
Single Pulse
TC = 25°C
10
0.1
0.6
0.7
0.8
0.9
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
20
1000
100
16
Figure 8. Gate−to−Source Voltage vs. Total
Charge
1000.0
1.0
Qgd
100
ID = 20 A
15
10
5
0
25
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
50
75
100
125
150
TJ, STARTING JUNCTION TEMPERATURE (°C)
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
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4
175
NVTFS5826NL
TYPICAL CHARACTERISTICS
RqJA(t) (°C/W) EFFECTIVE TRANSIENT
THERMAL RESISTANCE
100
Duty Cycle = 0.5
10
1
0.1
0.2
0.1
0.05
0.02
0.01
Single Pulse
0.01
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
PULSE TIME (sec)
Figure 13. Thermal Response
DEVICE ORDERING INFORMATION
Marking
Package
Shipping†
NVTFS5826NLTAG
5826
WDFN8
(Pb−Free)
1500 / Tape & Reel
NVTFS5826NLWFTAG
26LW
WDFN8
(Pb−Free)
1500 / Tape & Reel
NVTFS5826NLTWG
5826
WDFN8
(Pb−Free)
5000 / Tape & Reel
NVTFS5826NLWFTWG
26LW
WDFN8
(Pb−Free)
5000 / Tape & Reel
Device
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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5
NVTFS5826NL
PACKAGE DIMENSIONS
WDFN8 3.3x3.3, 0.65P
CASE 511AB
ISSUE D
2X
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH
PROTRUSIONS OR GATE BURRS.
0.20 C
D
A
D1
B
2X
0.20 C
8 7 6 5
4X
E1 E
q
c
1 2 3 4
A1
TOP VIEW
0.10 C
A
e
SIDE VIEW
0.10
8X b
C A B
0.05
C
4X
L
C
6X
0.10 C
DETAIL A
SEATING
PLANE
DETAIL A
8X
e/2
1
0.42
4
INCHES
NOM
0.030
−−−
0.012
0.008
0.130 BSC
0.116
0.120
0.078
0.083
0.130 BSC
0.116
0.120
0.058
0.063
0.009
0.012
0.026 BSC
0.012
0.016
0.026
0.032
0.012
0.017
0.002
0.005
0.055
0.059
0_
−−−
MIN
0.028
0.000
0.009
0.006
MAX
0.031
0.002
0.016
0.010
0.124
0.088
0.124
0.068
0.016
0.020
0.037
0.022
0.008
0.063
12 _
0.65
PITCH
PACKAGE
OUTLINE
4X
0.66
M
E3
8
G
MILLIMETERS
MIN
NOM
MAX
0.70
0.75
0.80
0.00
−−−
0.05
0.23
0.30
0.40
0.15
0.20
0.25
3.30 BSC
2.95
3.05
3.15
1.98
2.11
2.24
3.30 BSC
2.95
3.05
3.15
1.47
1.60
1.73
0.23
0.30
0.40
0.65 BSC
0.30
0.41
0.51
0.65
0.80
0.95
0.30
0.43
0.56
0.06
0.13
0.20
1.40
1.50
1.60
0_
−−−
12 _
SOLDERING FOOTPRINT*
K
E2
DIM
A
A1
b
c
D
D1
D2
E
E1
E2
E3
e
G
K
L
L1
M
q
5
D2
BOTTOM VIEW
3.60
L1
0.75
2.30
0.57
0.47
2.37
3.46
DIMENSION: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks,
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NVTFS5826NL/D