NTTFS5826NL Power MOSFET 60 V, 24 mW, Single N−Channel, m8FL Features • • • • Small Footprint (3.3 x 3.3 mm) for Compact Designs Low QG(TOT) to Minimize Switching Losses Low Capacitance to Minimize Driver Losses These are Pb−Free Devices http://onsemi.com V(BR)DSS Applications • • • • Motor Drivers DC−DC Converters Synchronous Rectification Power Management RDS(on) MAX 24 mW @ 10 V 60 V N−Channel D Symbol Value Unit Drain−to−Source Voltage VDSS 60 V Gate−to−Source Voltage VGS "20 V ID 20 A Parameter Power Dissipation RYJ−mb (Notes 1, 2, and 3) Continuous Drain Current RqJA (Notes 1 & 3) Tmb = 25°C Tmb = 100°C Tmb = 25°C Steady State Pulsed Drain Current PD Tmb = 100°C TA = 25°C TA = 25°C Operating Junction and Storage Temperature Source Current (Body Diode) Single Pulse Drain−to−Source Avalanche Energy (TJ = 25°C, VDD = 50 V, VGS = 10 V, IL(pk) = 14.4 A, L = 1.0 mH, RG = 25 W) Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) S W 19 ID A 8 6 PD 3.1 W IDM 133 A TJ, Tstg −55 to 175 °C IS 20 A EAS 20 mJ TL 260 °C 1.6 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. THERMAL RESISTANCE MAXIMUM RATINGS Parameter Junction−to−Mounting Board (top) − Steady State (Notes 2, 3) Junction−to−Ambient − Steady State (Note 3) MARKING DIAGRAM 10 TA = 100°C TA = 25°C, tp = 10 ms G 14 TA = 100°C Power Dissipation RqJA (Notes 1 & 3) 20 A 32 mW @ 4.5 V MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Continuous Drain Current RYJ−mb (Notes 1, 2, and 3) ID MAX Symbol Value Unit RYJ−mb 7.9 °C/W RqJA 48 1 S S S G 1 WDFN8 (m8FL) CASE 511AB 5826 A Y WW G 5826 AYWWG G D D D D = Specific Device Code = Assembly Location = Year = Work Week = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device Package Shipping† NTTFS5826NLTAG WDFN8 1500/Tape & Reel (Pb−Free) NTTFS5826NLTWG WDFN8 5000/Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. 1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. 2. Psi (Y) is used as required per JESD51−12 for packages in which substantially less than 100% of the heat flows to single case surface. 3. Surface−mounted on FR4 board using a 650 mm2, 2 oz. Cu pad. © Semiconductor Components Industries, LLC, 2011 November, 2011 − Rev. 2 1 Publication Order Number: NTTFS5826NL/D NTTFS5826NL ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Min Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 60 Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/TJ Typ Max Unit OFF CHARACTERISTICS Zero Gate Voltage Drain Current 58.6 IDSS Gate−to−Source Leakage Current V VGS = 0 V, VDS = 60 V mV/°C TJ = 25°C 1.0 TJ = 125°C 10 IGSS VDS = 0 V, VGS = ±20 V VGS(TH) VGS = VDS, ID = 250 mA ±100 mA nA ON CHARACTERISTICS (Note 4) Gate Threshold Voltage Negative Threshold Temperature Coefficient VGS(TH)/TJ Drain−to−Source On Resistance RDS(on) Forward Transconductance 1.5 3.0 5.6 gFS VGS = 10 V ID = 7.5 A 19 24 VGS = 4.5 V ID = 7.5 A 25 32 VDS = 15 V, ID = 5.0 A V mV/°C mW 8 S 850 pF CHARGES, CAPACITANCES AND GATE RESISTANCE Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss 50 Total Gate Charge QG(TOT) 8.4 Threshold Gate Charge QG(TH) 1.0 Gate−to−Source Charge QGS Gate−to−Drain Charge QGD Total Gate Charge VGS = 0 V, f = 1.0 MHz, VDS = 25 V VGS = 4.5 V, VDS = 48 V, ID = 5.0 A 85 2.5 3.9 QG(TOT) VGS = 10 V, VDS = 48V, ID = 5.0A 16 RG TA = 25°C 1.5 Gate Resistance nC 25 nC W SWITCHING CHARACTERISTICS (Note 5) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time td(on) 9.0 18 15 28 14 25 tf 5.4 12 td(on) 7.0 12 10 20 tr td(off) tr td(off) VGS = 4.5 V, VDS = 48 V, ID = 5.0 A, RG = 2.5 W VGS = 10 V, VDS = 48 V, ID = 5.0 A, RG = 2.5 W 17 30 3.5 6.0 TJ = 25°C 0.8 2.3 TJ = 125°C 0.7 tf ns ns DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time VSD tRR Charge Time ta Discharge Time tb Reverse Recovery Charge VGS = 0 V, IS = 7.5 A 15 VGS = 0 V, dIS/dt = 100 A/ms, IS = 5.0 A QRR http://onsemi.com 2 ns 12 4 13 4. Pulse Test: pulse width = 300 ms, duty cycle v 2%. 5. Switching characteristics are independent of operating junction temperatures. V nC NTTFS5826NL TYPICAL CHARACTERISTICS VGS = 10 V 40 TJ = 25°C VGS = 4.5 V VGS = 3.8 V VDS ≥ 10 V ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 40 30 VGS = 3.6 V 20 VGS = 3.2 V 10 30 20 TJ = 25°C 10 TJ = 125°C VGS = 2.8 V 0 0 1 2 3 4 VDS, DRAIN−TO−SOURCE VOLTAGE (V) 0 5 1 2 3 4 VGS, GATE−TO−SOURCE VOLTAGE (V) 0.055 0.045 0.035 0.025 0.015 2 4 6 8 10 VGS, GATE−TO−SOURCE VOLTAGE (V) 0.040 TJ = 25°C 0.030 VGS = 4.5 V 0.010 5 10 15 20 25 30 35 40 ID, DRAIN CURRENT (A) Figure 4. On−Resistance vs. Drain Current and Gate Voltage 2.10 10000 ID = 7.5 A VGS = 4.5 V VGS = 0 V 1.70 IDSS, LEAKAGE (nA) RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) VGS = 10 V 0.020 Figure 3. On−Resistance vs. Gate−to−Source Voltage 1.90 5 Figure 2. Transfer Characteristics RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) Figure 1. On−Region Characteristics ID = 7.5 A TJ = 25°C TJ = −55°C 1.50 1.30 1.10 0.90 TJ = 150°C 1000 TJ = 125°C 0.70 0.50 −50 −25 0 25 50 75 100 125 150 175 100 10 20 30 40 50 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage http://onsemi.com 3 60 NTTFS5826NL TYPICAL CHARACTERISTICS C, CAPACITANCE (pF) Ciss 800 600 400 200 Coss Crss 0 0 10 20 30 40 50 VGS, GATE−TO−SOURCE VOLTAGE (V) 10 VDS = 0 V TJ = 25°C 1000 60 4 0 IS, SOURCE CURRENT (A) td(on) 1 10 RG, GATE RESISTANCE (W) 100 100 ms 1 ms 10 ms 10 ms dc RDS(on) Limit Thermal Limit Package Limit 0.1 4 8 12 16 1 10 VDS, DRAIN−TO−SOURCE VOLTAGE (V) VGS = 0 V TJ = 25°C 30 20 10 0 0.5 0.6 0.7 0.8 0.9 1.0 VSD, SOURCE−TO−DRAIN VOLTAGE (V) 1.1 Figure 10. Diode Forward Voltage vs. Current EAS, SINGLE PULSE DRAIN−TO− SOURCE AVALANCHE ENERGY (mJ) ID, DRAIN CURRENT (A) VGS = 10 V Single Pulse TC = 25°C 10 0.1 0 40 td(off) 1 VDS = 48 V ID = 5 A TJ = 25°C 2 Figure 9. Resistive Switching Time Variation vs. Gate Resistance 100 Qgd Figure 8. Gate−to−Source vs. Total Charge tf 1000 Qgs Figure 7. Capacitance Variation tr t, TIME (ns) 6 Qg, TOTAL GATE CHARGE (nC) VDD = 48 V ID = 5 A VGS = 4.5 V 1 8 VDS, DRAIN−TO−SOURCE VOLTAGE (V) 100 10 QT 100 20 ID = 20 A 15 10 5 0 25 Figure 11. Maximum Rated Forward Biased Safe Operating Area 50 75 100 125 150 TJ, STARTING JUNCTION TEMPERATURE (°C) Figure 12. Maximum Avalanche Energy vs. Starting Junction Temperature http://onsemi.com 4 175 NTTFS5826NL TYPICAL CHARACTERISTICS 100 D = 0.5 D = 0.2 D = 0.1 D = 0.05 RqJA (t) 10 D = 0.02 1 D = 0.01 0.1 Single Pulse 0.01 0.000001 0.00001 0.0001 0.001 0.01 0.1 PULSE TIME (sec) Figure 13. Thermal Response http://onsemi.com 5 1 10 100 1000 NTTFS5826NL PACKAGE DIMENSIONS WDFN8 3.3x3.3, 0.65P CASE 511AB ISSUE C 2X NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH PROTRUSIONS OR GATE BURRS. 0.20 C D A D1 B 2X 0.20 C 8 7 6 5 4X E1 E q c 1 2 3 4 A1 TOP VIEW 0.10 C A C 6X e 0.10 C SIDE VIEW DETAIL A SEATING PLANE DETAIL A q 8X 0.10 B C A 0.05 L 8X e/2 0.42 14 0.116 0.078 0.116 0.058 0.009 0.012 0.025 0.012 0.002 0.055 0° INCHES NOM 0.030 *** 0.012 0.008 0.130 BSC 0.120 0.083 0.130 BSC 0.120 0.063 0.012 0.026 BSC 0.016 *** 0.017 0.005 0.059 *** MAX 0.031 0.002 0.016 0.010 0.124 0.088 0.124 0.068 0.016 0.020 *** 0.022 0.008 0.063 12° 4X 0.66 M E3 8 G MIN 0.028 0.000 0.009 0.006 0.65 PITCH PACKAGE OUTLINE K E2 MILLIMETERS MIN NOM MAX 0.70 0.75 0.80 0.00 *** 0.05 0.40 0.23 0.30 0.25 0.15 0.20 3.30 BSC 3.15 2.95 3.05 1.98 2.24 2.11 3.30 BSC 2.95 3.15 3.05 1.73 1.47 1.60 0.23 0.30 0.40 0.65 BSC 0.30 0.41 0.51 0.64 *** *** 0.30 0.43 0.56 0.06 0.13 0.20 1.60 1.40 1.50 0° *** 12° SOLDERING FOOTPRINT* C 4X DIM A A1 b c D D1 D2 E E1 E2 E3 e G K L L1 M 5 D2 BOTTOM VIEW 3.60 L1 0.75 2.30 0.57 0.47 2.37 3.46 DIMENSION: MILLIMETERS *For additional information on our Pb *Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 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