NVTFS5116PL D

NVTFS5116PL
Power MOSFET
−60 V, −14 A, 52 mW, Single P−Channel
Features
•
•
•
•
•
•
Small Footprint (3.3 x 3.3 mm) for Compact Design
Low RDS(on) to Minimize Conduction Losses
Low Capacitance to Minimize Driver Losses
NVTFS5116PLWF − Wettable Flanks Product
AEC−Q101 Qualified and PPAP Capable
These Devices are Pb−Free and are RoHS Compliant
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V(BR)DSS
RDS(on) MAX
ID MAX
52 mW @ −10 V
−60 V
−14 A
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
72 mW @ −4.5 V
Symbol
Value
Unit
Drain−to−Source Voltage
VDSS
−60
V
Gate−to−Source Voltage
VGS
±20
V
ID
−14
A
Continuous Drain Current RYJ−mb (Notes 1,
2, 3, 4)
Power Dissipation
RYJ−mb (Notes 1, 2, 3)
Continuous Drain Current RqJA (Notes 1 &
3, 4)
Power Dissipation
RqJA (Notes 1, 3)
Pulsed Drain Current
Tmb = 25°C
Steady
State
Tmb = 100°C
Tmb = 25°C
Steady
State
PD
Operating Junction and Storage Temperature
Source Current (Body Diode)
Single Pulse Drain−to−Source Avalanche
Energy (TJ = 25°C, VDD = 50 V, VGS = 10 V,
IL(pk) = 30 A, L = 0.1 mH, RG = 25 W)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
ID
MARKING DIAGRAM
−4
PD
W
3.2
1.6
IDM
−126
A
TJ, Tstg
−55 to
+175
°C
IS
−17
A
EAS
45
mJ
TL
260
°C
THERMAL RESISTANCE MAXIMUM RATINGS (Note 1)
Junction−to−Mounting Board (top) − Steady
State (Note 2 and 3)
Junction−to−Ambient − Steady State (Note 3)
S (1,2,3)
A
−6
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
Parameter
G (4)
10
TA = 100°C
TA = 25°C, tp = 10 ms
W
21
TA = 100°C
TA = 25°C
D (5−8)
−10
Tmb = 100°C
TA = 25°C
P−Channel MOSFET
Symbol
Value
Unit
RYJ−mb
7.2
°C/W
RqJA
47
1
WDFN8
(m8FL)
CASE 511AB
XXXX
A
Y
WW
G
1
S
S
S
G
XXXX
AYWWG
G
D
D
D
D
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering, marking and shipping information in the
package dimensions section on page 5 of this data sheet.
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Psi (Y) is used as required per JESD51−12 for packages in which
substantially less than 100% of the heat flows to single case surface.
3. Surface−mounted on FR4 board using a 650 mm2, 2 oz. Cu pad.
4. Continuous DC current rating. Maximum current for pulses as long as 1
second is higher but is dependent on pulse duration and duty cycle.
© Semiconductor Components Industries, LLC, 2014
June, 2014 − Rev. 3
1
Publication Order Number:
NVTFS5116PL/D
NVTFS5116PL
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Test Condition
Min
V(BR)DSS
VGS = 0 V, ID = 250 mA
−60
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Zero Gate Voltage Drain Current
IDSS
VGS = 0 V,
VDS = 60 V
V
TJ = 25°C
−1.0
TJ = 125°C
−10
IGSS
VDS = 0 V, VGS = "20 V
Gate Threshold Voltage
VGS(TH)
VGS = VDS, ID = −250 mA
−3
V
Drain−to−Source On Resistance
RDS(on)
VGS = −10 V, ID = −7 A
37
52
mW
VGS = −4.5 V, ID = −7 A
51
72
gFS
VDS = 15 V, ID = −5 A
11
S
Input Capacitance
Ciss
1258
pF
Output Capacitance
Coss
VGS = 0 V, f = 1.0 MHz,
VDS = −25 V
Reverse Transfer Capacitance
Crss
84
Total Gate Charge
QG(TOT)
14
nC
Threshold Gate Charge
QG(TH)
1
nC
Gate−to−Source Charge
QGS
Gate−to−Drain Charge
QGD
Gate−to−Source Leakage Current
"100
mA
nA
ON CHARACTERISTICS (Note 5)
Forward Transconductance
−1
CHARGES AND CAPACITANCES
Total Gate Charge
QG(TOT)
VGS = −4.5 V, VDS = −48 V,
ID = −7 A
127
4
8
VGS = −10 V, VDS = −48 V,
ID = −7 A
25
nC
14
ns
SWITCHING CHARACTERISTICS (Note 6)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
td(on)
tr
td(off)
VGS = −4.5 V, VDS = −48 V,
ID = −7 A
tf
68
24
36
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
Reverse Recovery Time
VSD
VGS = 0 V,
IS = −7 A
TJ = 25°C
−0.79
TJ = 125°C
−0.64
tRR
21
Charge Time
ta
16
Discharge Time
tb
Reverse Recovery Charge
VGS = 0 V, dIS/dt = 100 A/ms,
IS = −7 A
QRR
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2
V
ns
5
24
5. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
6. Switching characteristics are independent of operating junction temperatures.
−1.20
nC
NVTFS5116PL
TYPICAL CHARACTERISTICS
50
40
TJ = 25°C
−5.0 V
−10 V
−ID, DRAIN CURRENT (A)
40
−ID, DRAIN CURRENT (A)
VDS ≥ −10 V
VGS = −7 V
−4.6 V
−4.3 V
30
−4 V
20
−3.7 V
−3.4 V
10
0
1
2
3
4
−VDS, DRAIN−TO−SOURCE VOLTAGE (V)
20
TJ = 25°C
10
TJ = 125°C
−3.1 V
−2.8 V
0
30
5
2
ID = −7 A
TJ = 25°C
0.065
0.055
0.045
0.035
3
4
5
6
7
8
9
−VGS, GATE−TO−SOURCE VOLTAGE (V)
0.070
VGS = −4.5 V
0.060
0.050
VGS = −10 V
0.040
0.030
5
10
10
15
20
25
30
35
40
−ID, DRAIN CURRENT (A)
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
100000
2.2
ID = −7 A
VGS = −10 V
VGS = 0 V
1.8
−IDSS, LEAKAGE (nA)
RDS(on), DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)
6
0.080
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
2.0
3
4
5
−VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 2. Transfer Characteristics
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
Figure 1. On−Region Characteristics
0.075
TJ = −55°C
0
1.6
1.4
1.2
1.0
0.8
10000
TJ = 150°C
1000
TJ = 125°C
0.6
0.4
50
25
0
25
50
75
100 125
TJ, JUNCTION TEMPERATURE (°C)
150
175
100
10
Figure 5. On−Resistance Variation with
Temperature
20
30
40
50
−VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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3
60
NVTFS5116PL
TYPICAL CHARACTERISTICS
10
VGS = 0 V
1600
C, CAPACITANCE (pF)
−VGS, GATE−TO−SOURCE VOLTAGE
(V)
1800
TJ = 25°C
1400
Ciss
1200
1000
800
600
400
Coss
200
0
Crss
0
10
20
30
40
50
8
6
Qgs
4
VDS = −48 V
ID = −7 A
TJ = 25°C
0
0
10
15
20
Qg, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source Voltage vs. Total
Charge
25
40
tf
−IS, SOURCE CURRENT (A)
100
tr
td(off)
td(on)
10
1.0
VGS = 0 V
TJ = 25°C
30
20
10
0
1
10
RG, GATE RESISTANCE (W)
0.5
100
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
0.6
0.7
0.8
0.9
−VSD, SOURCE−TO−DRAIN VOLTAGE (V)
1.0
Figure 10. Diode Forward Voltage vs. Current
1000
45
VGS = −10 V
Single Pulse
TC = 25°C
10
100 ms
1 ms
10 ms
10 ms
1
RDS(on) Limit
Thermal Limit
Package Limit
dc
0.1
0.1
1
10
−VDS, DRAIN−TO−SOURCE VOLTAGE (V)
EAS, SINGLE PULSE DRAIN−TO−
SOURCE AVALANCHE ENERGY (mJ)
−ID, DRAIN CURRENT (A)
5
−VDS, DRAIN−TO−SOURCE VOLTAGE (V)
VDD = −48 V
ID = −7 A
VGS = −4.5 V
100
Qgd
2
60
1000
t, TIME (ns)
QT
100
ID = −30 A
30
15
0
25
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
50
75
100
125
150
TJ, STARTING JUNCTION TEMPERATURE (°C)
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
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4
175
NVTFS5116PL
TYPICAL CHARACTERISTICS
100
Duty Cycle = 0.5
RqJA(t) (°C/W)
10
1
0.2
0.1
0.05
0.02
0.01
0.1
Single Pulse
0.01
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
PULSE TIME (sec)
Figure 13. Thermal Response
DEVICE ORDERING INFORMATION
Marking
Package
Shipping†
NVTFS5116PLTAG
5116
WDFN8
(Pb−Free)
1500 / Tape & Reel
NVTFS5116PLWFTAG
16LW
WDFN8
(Pb−Free)
1500 / Tape & Reel
NVTFS5116PLTWG
5116
WDFN8
(Pb−Free)
5000 / Tape & Reel
NVTFS5116PLWFTWG
16LW
WDFN8
(Pb−Free)
5000 / Tape & Reel
Device
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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5
NVTFS5116PL
PACKAGE DIMENSIONS
WDFN8 3.3x3.3, 0.65P
CASE 511AB
ISSUE D
2X
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH
PROTRUSIONS OR GATE BURRS.
0.20 C
D
A
B
D1
2X
0.20 C
8 7 6 5
4X
q
E1 E
c
1 2 3 4
A1
TOP VIEW
0.10 C
A
0.10 C
SIDE VIEW
0.10
8X b
C A B
0.05
C
4X
DETAIL A
6X
C
e
SEATING
PLANE
DETAIL A
8X
e/2
L
0.42
4
INCHES
NOM
0.030
−−−
0.012
0.008
0.130 BSC
0.116
0.120
0.078
0.083
0.130 BSC
0.116
0.120
0.058
0.063
0.009
0.012
0.026 BSC
0.012
0.016
0.026
0.032
0.012
0.017
0.002
0.005
0.055
0.059
0_
−−−
MIN
0.028
0.000
0.009
0.006
0.65
PITCH
PACKAGE
OUTLINE
K
MAX
0.031
0.002
0.016
0.010
0.124
0.088
0.124
0.068
0.016
0.020
0.037
0.022
0.008
0.063
12 _
4X
0.66
M
E3
8
G
MILLIMETERS
MIN
NOM
MAX
0.70
0.75
0.80
0.00
−−−
0.05
0.23
0.30
0.40
0.15
0.20
0.25
3.30 BSC
2.95
3.05
3.15
1.98
2.11
2.24
3.30 BSC
2.95
3.05
3.15
1.47
1.60
1.73
0.23
0.30
0.40
0.65 BSC
0.30
0.41
0.51
0.65
0.80
0.95
0.30
0.43
0.56
0.06
0.13
0.20
1.40
1.50
1.60
0_
−−−
12 _
SOLDERING FOOTPRINT*
1
E2
DIM
A
A1
b
c
D
D1
D2
E
E1
E2
E3
e
G
K
L
L1
M
q
5
D2
BOTTOM VIEW
3.60
L1
0.75
2.30
0.57
0.47
2.37
3.46
DIMENSION: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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NVTFS5116PL/D