NTTFS4985NF Power MOSFET 30 V, 64 A, Single N−Channel, WDFN8 Features • • • • • Integrated Schottky Diode Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are Pb−Free and are RoHS Compliant www.onsemi.com V(BR)DSS ID MAX 3.5 mW @ 10 V 30 V Applications • • • • RDS(on) MAX 64 A 5.2 mW @ 4.5 V CPU Power Delivery Synchronous Rectification for DC−DC Converters Low Side Switching Telecom Secondary Side Rectification N−Channel MOSFET D MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS 30 V Gate−to−Source Voltage VGS ±20 V ID 22 A Continuous Drain Current RqJA (Note 1) TA = 25°C Power Dissipation RqJA (Note 1) TA = 25°C Continuous Drain Current RqJA ≤ 10 s (Note 1) TA = 25°C Power Dissipation RqJA ≤ 10 s (Note 1) Continuous Drain Current RqJA (Note 2) TA = 85°C S 15.9 PD 2.69 MARKING DIAGRAM W 1 S S S G 1 ID TA = 85°C Steady State 32.4 A 23.4 TA = 25°C PD 5.85 W TA = 25°C ID 16.3 A TA = 85°C TA = 25°C PD 1.47 W Continuous Drain Current RqJC (Note 1) TC = 25°C ID 64 A Power Dissipation RqJC (Note 1) TC = 25°C PD 22.73 TC = 85°C TA = 25°C, tp = 10 ms WDFN8 (m8FL) CASE 511AB 4985 A Y WW G 11.7 Power Dissipation RqJA (Note 2) Pulsed Drain Current G 4985 AYWWG G D D D D = Specific Device Code = Assembly Location = Year = Work Week = Pb−Free Package (Note: Microdot may be in either location) 46 ORDERING INFORMATION W Device Package Shipping† WDFN8 (Pb−Free) 1500 / Tape & Reel IDM 192 A TJ, Tstg −55 to +150 °C NTTFS4985NFTAG IS 32 A Drain to Source dV/dt dV/dt 6.0 V/ns Single Pulse Drain−to−Source Avalanche Energy (TJ = 25°C, VDD = 50 V, VGS = 10 V, IL = 32 Apk, L = 0.1 mH, RG = 25 W) EAS 52 mJ †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. TL 260 °C Operating Junction and Storage Temperature Source Current (Body Diode) Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Surface−mounted on FR4 board using 1 sq−in pad, 2 oz Cu. 2. Surface−mounted on FR4 board using the minimum recommended pad size of 90 mm2. © Semiconductor Components Industries, LLC, 2015 April, 2015 − Rev. 2 1 Publication Order Number: NTTFS4985NF/D NTTFS4985NF THERMAL RESISTANCE MAXIMUM RATINGS Symbol Value Unit Junction−to−Case (Drain) Parameter RqJC 5.5 °C/W Junction−to−Ambient – Steady State (Note 3) RqJA 46.4 Junction−to−Ambient – Steady State (Note 4) RqJA 84.8 Junction−to−Ambient – (t ≤ 10 s) (Note 3) RqJA 21.4 3. Surface−mounted on FR4 board using 1 sq−in pad, 2 oz Cu. 4. Surface−mounted on FR4 board using the minimum recommended pad size of 90 mm2. ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Min Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 30 Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/TJ Typ Max Unit OFF CHARACTERISTICS V 15 Zero Gate Voltage Drain Current IDSS VGS = 0 V, VDS = 24 V Gate−to−Source Leakage Current IGSS VDS = 0 V, VGS = ±20 V VGS(TH) VGS = VDS, ID = 250 mA TJ = 25°C mV/°C 500 mA ±100 nA 2.3 V ON CHARACTERISTICS (Note 5) Gate Threshold Voltage Negative Threshold Temperature Coefficient VGS(TH)/TJ Drain−to−Source On Resistance RDS(on) gFS 1.6 5.2 VGS = 10 V VGS = 4.5 V Forward Transconductance 1.2 ID = 20 A 2.8 ID = 10 A 2.8 ID = 20 A 4.16 ID = 10 A 4.13 VDS = 1.5 V, ID = 10 A mV/°C 3.5 mW 5.2 34 S 2075 pF CHARGES AND CAPACITANCES Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss 46 Total Gate Charge QG(TOT) 13.6 Threshold Gate Charge QG(TH) Gate−to−Source Charge QGS Gate−to−Drain Charge QGD Total Gate Charge QG(TOT) VGS = 0 V, f = 1.0 MHz, VDS = 15 V 876 nC 2.0 VGS = 4.5 V, VDS = 15 V, ID = 20 A 5.8 4.1 VGS = 10 V, VDS = 15 V, ID = 20 A 29.4 nC 11 ns SWITCHING CHARACTERISTICS (Note 6) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time td(on) tr td(off) VGS = 4.5 V, VDS = 15 V, ID = 15 A, RG = 3.0 W tf 24 20 5.4 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 5. Pulse Test: pulse width = 300 ms, duty cycle v 2%. 6. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2 NTTFS4985NF ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Min Typ Max Unit SWITCHING CHARACTERISTICS (Note 6) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time td(on) tr td(off) ns 8.5 VGS = 10 V, VDS = 15 V, ID = 15 A, RG = 3.0 W tf 24 25 4.0 DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time VSD TJ = 25°C 0.4 TJ = 125°C 0.33 tRR Charge Time ta Discharge Time tb Reverse Recovery Charge VGS = 0 V, IS = 2 A 35.7 VGS = 0 V, dIS/dt = 100 A/ms, IS = 2 A 0.7 V ns 18.2 17.5 QRR 32 nC Source Inductance LS 0.65 nH Drain Inductance LD PACKAGE PARASITIC VALUES Gate Inductance LG Gate Resistance RG 0.20 TA = 25°C 1.5 1.0 W Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 5. Pulse Test: pulse width = 300 ms, duty cycle v 2%. 6. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 3 NTTFS4985NF TYPICAL PERFORMANCE CURVES 110 VGS = 3.8 V 4.0 V 3.4 V 105 4.4 V to 4.5 V 90 3.2 V 75 7.5 V to 10 V 3.0 V 60 45 2.8 V 30 2.6 V 2.4 V 0 80 70 60 TJ = 125°C 50 40 TJ = 25°C 30 TJ = −55°C 20 10 0 0 RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) VDS = 5 V 90 1 2 3 4 1.5 2 2.5 3 3.5 VDS, DRAIN−TO−SOURCE VOLTAGE (V) VGS, GATE−TO−SOURCE VOLTAGE (V) Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics 0.030 ID = 30 A TJ = 25°C 0.025 0.020 0.015 0.010 0.005 0 2.0 1 5 3.0 4.0 5.0 6.0 7.0 8.0 9.0 RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) ID, DRAIN CURRENT (A) 4.2 V 120 15 5.50E−03 5.25E−03 5.00E−03 4.75E−03 4.50E−03 4.25E−03 4.00E−03 3.75E−03 3.50E−03 3.25E−03 3.00E−03 2.75E−03 2.50E−03 2.25E−03 10 4 TJ = 25°C VGS = 4.5 V VGS = 10 V 5 20 35 50 65 80 95 110 125 140 155 VGS, GATE−TO−SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A) Figure 3. On−Resistance vs. Gate−to−Source Voltage Figure 4. On−Resistance vs. Drain Current and Gate Voltage 1.7 1.6 1.5 1.00E−01 VGS = 0 V ID = 20 A VGS = 10 V TJ = 150°C 1.4 IDSS, LEAKAGE (A) RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) 100 3.6 V 135 ID, DRAIN CURRENT (A) 150 1.3 1.2 1.1 1 0.9 0.8 1.00E−02 TJ = 125°C 1.00E−03 1.00E−04 TJ = 25°C 0.7 0.6 −50 1.00E−05 −25 0 25 50 75 100 125 150 0 5 10 15 20 25 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage www.onsemi.com 4 NTTFS4985NF 2800 2600 2400 2200 2000 1800 1600 1400 1200 1000 800 600 400 200 0 VGS, GATE−TO−SOURCE VOLTAGE (V) C, CAPACITANCE (pF) TYPICAL PERFORMANCE CURVES VGS = 0 V TJ = 25°C Ciss Coss Crss 0 5 10 15 20 25 VDS, DRAIN−TO−SOURCE VOLTAGE (V) 8 6 Qgs 4 ID = 30 A TJ = 25°C VDD = 15 V VGS = 10 V 0 Figure 7. Capacitance Variation 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 QG, TOTAL GATE CHARGE (nC) Figure 8. Gate−to−Source and Drain−to−Source Voltage vs. Total Charge 1000 10 VDD = 15 V ID = 10 A VGS = 10 V VGS = 0 V TJ = 25°C 9 IS, SOURCE CURRENT (A) t, TIME (ns) Qgd 2 0 30 QT 10 td(off) 100 tf tr 10 td(on) 8 7 6 5 4 3 2 1 1 1 10 100 0.3 0.4 0.5 0.6 0.7 Figure 9. Resistive Switching Time Variation vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current 10 ms 100 ms 10 1 ms 10 ms 1 RDS(on) LIMIT THERMAL LIMIT PACKAGE LIMIT 0.1 dc 0.01 1 10 100 EAS, SINGLE PULSE DRAIN−TO−SOURCE AVALANCHE ENERGY (mJ) ID, DRAIN CURRENT (A) 0.2 VSD, SOURCE−TO−DRAIN VOLTAGE (V) VGS = 20 V Single Pulse TC = 25°C 0.1 0.1 RG, GATE RESISTANCE (W) 1000 100 0 0.0 55 50 ID = 32 A 45 40 35 30 25 20 15 10 5 0 25 50 75 100 125 VDS, DRAIN−TO−SOURCE VOLTAGE (V) TJ, STARTING JUNCTION TEMPERATURE (°C) Figure 11. Maximum Rated Forward Biased Safe Operating Area Figure 12. Maximum Avalanche Energy vs. Starting Junction Temperature www.onsemi.com 5 150 NTTFS4985NF TYPICAL PERFORMANCE CURVES 100 r(t) (°C/W) 10 1 D = 0.5 0.2 0.1 0.05 0.02 0.01 0.1 SINGLE PULSE 0.01 0.000001 0.00001 0.0001 0.001 0.01 0.1 PULSE TIME (s) Figure 13. Thermal Response www.onsemi.com 6 1 10 100 1000 NTTFS4985NF PACKAGE DIMENSIONS WDFN8 3.3x3.3, 0.65P CASE 511AB ISSUE D 2X NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH PROTRUSIONS OR GATE BURRS. 0.20 C D A B D1 2X 0.20 C 8 7 6 5 4X q E1 E c 1 2 3 4 A1 TOP VIEW 0.10 C A 0.10 C SIDE VIEW 0.10 8X b C A B 0.05 C 4X DETAIL A 6X C e SEATING PLANE DETAIL A 8X e/2 L 0.42 4 INCHES NOM 0.030 −−− 0.012 0.008 0.130 BSC 0.116 0.120 0.078 0.083 0.130 BSC 0.116 0.120 0.058 0.063 0.009 0.012 0.026 BSC 0.012 0.016 0.026 0.032 0.012 0.017 0.002 0.005 0.055 0.059 0_ −−− MIN 0.028 0.000 0.009 0.006 0.65 PITCH PACKAGE OUTLINE K MAX 0.031 0.002 0.016 0.010 0.124 0.088 0.124 0.068 0.016 0.020 0.037 0.022 0.008 0.063 12 _ 4X 0.66 M E3 8 G MILLIMETERS MIN NOM MAX 0.80 0.70 0.75 0.00 −−− 0.05 0.23 0.30 0.40 0.15 0.20 0.25 3.30 BSC 3.15 2.95 3.05 2.24 1.98 2.11 3.30 BSC 3.15 2.95 3.05 1.73 1.47 1.60 0.23 0.30 0.40 0.65 BSC 0.51 0.30 0.41 0.95 0.65 0.80 0.56 0.30 0.43 0.20 0.06 0.13 1.40 1.50 1.60 0_ −−− 12 _ SOLDERING FOOTPRINT* 1 E2 DIM A A1 b c D D1 D2 E E1 E2 E3 e G K L L1 M q 5 D2 BOTTOM VIEW 3.60 L1 0.75 2.30 0.57 0.47 2.37 3.46 DIMENSION: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 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