NVD5862N D

NVD5862N
Power MOSFET
60 V, 5.7 mW, 98 A, Single N−Channel
Features
•
•
•
•
•
Low RDS(on) to Minimize Conduction Losses
High Current Capability
Avalanche Energy Specified
AEC−Q101 Qualified and PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
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V(BR)DSS
RDS(on)
ID
60 V
5.7 mW @ 10 V
98 A
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain Current RqJC (Note 1)
Power Dissipation RqJC
(Note 1)
Continuous Drain Current RqJA (Notes 1 & 2)
Power Dissipation RqJA
(Notes 1 & 2)
Pulsed Drain Current
TC = 25°C
Steady
State
Symbol
Value
Unit
VDSS
60
V
VGS
"20
V
ID
98
A
TC = 100°C
TC = 25°C
Steady
State
PD
ID
13
4.1
TA = 25°C, tp = 10 ms
IDM
367
A
TA = 25°C
IDmaxpkg
60
A
TJ, Tstg
−55 to
175
°C
IS
96
A
EAS
205
mJ
TL
260
°C
TA = 100°C
Operating Junction and Storage Temperature
Source Current (Body Diode)
Single Pulse Drain−to−Source Avalanche
Energy (TJ = 25°C, VDD = 50 V, VGS = 10 V,
IL(pk) = 37 A, L = 0.3 mH, RG = 25 W)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
W
2.0
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
4
A
18
PD
Current Limited by
Package (Note 3)
S
W
115
58
TA = 100°C
TA = 25°C
N−Channel
G
69
TC = 100°C
TA = 25°C
D
Symbol
Value
Unit
Junction−to−Case − Steady State (Drain)
RqJC
1.3
°C/W
Junction−to−Ambient − Steady State (Note 2)
RqJA
37
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Surface−mounted on FR4 board using a 650 mm2, 2 oz. Cu pad.
3. Continuous DC current rating. Maximum current for pulses as long as 1
second are higher but are dependent on pulse duration and duty cycle.
1 2
3
DPAK
CASE 369C
(Surface Mount)
STYLE 2
MARKING DIAGRAMS
& PIN ASSIGNMENT
4
Drain
YWW
V58
62NG
Parameter
2
1 Drain 3
Gate Source
Y
= Year
WW
= Work Week
V5862N = Device Code
G
= Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
© Semiconductor Components Industries, LLC, 2015
June, 2015 − Rev. 2
1
Publication Order Number:
NVD5862N/D
NVD5862N
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Symbol
Test Condition
Min
Drain−to−Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = 250 mA
60
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/TJ
Parameter
Typ
Max
Unit
OFF CHARACTERISTICS
V
47
Zero Gate Voltage Drain Current
IDSS
Gate−to−Source Leakage Current
IGSS
VDS = 0 V, VGS = ±20 V
VGS(TH)
VGS = VDS, ID = 250 mA
VGS = 0 V,
VDS = 60 V
mV/°C
TJ = 25°C
1.0
TJ = 125°C
mA
100
±100
nA
4.0
V
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
Threshold Temperature Coefficient
VGS(TH)/TJ
Drain−to−Source On Resistance
Forward Transconductance
2.0
−9.7
RDS(on)
VGS = 10 V, ID = 48 A
4.4
gFS
VDS = 15 V, ID = 10 A
18
mV/°C
5.7
mW
S
CHARGES, CAPACITANCES AND GATE RESISTANCES
Input Capacitance
Ciss
VGS = 0 V, f = 1.0 MHz,
VDS = 25 V
5050
6000
500
600
420
pF
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
300
Total Gate Charge
QG(TOT)
82
Threshold Gate Charge
QG(TH)
Gate−to−Source Charge
QGS
Gate−to−Drain Charge
QGD
27
RG
0.6
W
td(on)
18
ns
Gate Resistance
VGS = 10 V, VDS = 48 V,
ID = 48 A
nC
5.2
24
SWITCHING CHARACTERISTICS (Note 5)
Turn−On Delay Time
Rise Time
tr
Turn−Off Delay Time
Fall Time
td(off)
VGS = 10 V, VDD = 48 V,
ID = 48 A, RG = 2.5 W
tf
70
35
60
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
Reverse Recovery Time
VSD
TJ = 25°C
0.9
TJ = 100°C
0.75
tRR
Charge Time
ta
Discharge Time
tb
Reverse Recovery Charge
VGS = 0 V,
IS = 48 A
1.2
38
VGS = 0 V, dIs/dt = 100 A/ms,
IS = 48 A
QRR
V
ns
20
18
40
nC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
5. Switching characteristics are independent of operating junction temperatures.
ORDERING INFORMATION
Order Number
NVD5862NT4G
Package
Shipping†
DPAK
(Pb−Free)
2500 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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2
NVD5862N
TYPICAL CHARACTERISTICS
200
200
160
6.0 V
120
5.8 V
5.6 V
80
40
VDS ≥ 5 V
180
6.2 V
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
TJ = 25°C VGS = 10 V
5.2 V
160
140
120
100
80
TJ = 25°C
60
40
20
0
1
2
3
4
5
4
5
6
7
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
ID = 45 A
TJ = 25°C
0.025
0.020
0.015
0.010
0.005
0.000
4
5
6
7
8
9
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
VGS, GATE−TO−SOURCE VOLTAGE (V)
0.030
10
0.006
VGS = 10 V
TJ = 25°C
0.005
0.004
0.003
10
20
30
40
50
60
70
80
90
VGS, GATE−TO−SOURCE VOLTAGE (V)
ID, DRAIN CURRENT (A)
Figure 3. On−Resistance vs. Gate Voltage
Figure 4. On−Resistance vs. Drain Current
100
100000
2.2
2.0
TJ = −55°C
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
VGS = 0 V
ID = 45 A
VGS = 10 V
1.8
IDSS, LEAKAGE (nA)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
0
TJ = 125°C
0
3
1.6
TJ = 150°C
10000
1.4
1.2
1.0
TJ = 125°C
0.8
0.6
−50
1000
−25
0
25
50
75
100
125
150
175
10
20
30
40
50
TJ, JUNCTION TEMPERATURE (°C)
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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3
60
NVD5862N
TYPICAL CHARACTERISTICS
10
6000
C, CAPACITANCE (pF)
5000
VGS, GATE−TO−SOURCE VOLTAGE (V)
VGS = 0 V
TJ = 25°C
Ciss
4000
3000
2000
Coss
1000
0
0
Crss
10
20
30
40
50
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
60
QT
9
8
7
6
Qgs
4
3
VDS = 48 V
ID = 48 A
TJ = 25°C
2
1
0
0
10
Figure 7. Capacitance Variation
IS, SOURCE CURRENT (A)
100
t, TIME (ns)
80
90
100
VDD = 48 V
ID = 48 A
VGS = 10 V
tr
td(on)
tf
td(off)
10
1
10
VGS = 0 V
TJ = 25°C
80
60
40
20
0
0.50
1
100
0.60
0.70
0.80
0.90
1.00
1.10
RG, GATE RESISTANCE (W)
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
1000
225
1 ms
10 ms
dc
100
100 ms 10 ms
10
VGS = 10 V
SINGLE PULSE
TC = 25°C
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
0.1
0.1
1
ID = 37 A
200
AVALANCHE ENERGY (mJ)
ID, DRAIN CURRENT (A)
20
30
40
50
60
70
Qg, TOTAL GATE CHARGE (nC)
Figure 8. Gate−to−Source vs. Total Charge
1000
1
Qgd
5
175
150
125
100
75
50
25
10
100
0
25
50
75
100
125
150
175
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
TJ, STARTING JUNCTION TEMPERATURE
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Avalanche Energy versus
Starting Junction Temperature
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4
NVD5862N
TYPICAL CHARACTERISTICS
RqJC(t) (°C/W) EFFECTIVE TRANSIENT
THERMAL RESISTANCE
10
1 Duty Cycle = 0.5
0.2
0.1
0.1 0.05
0.02
0.01
0.01
SINGLE PULSE
0.001
0.000001
0.00001
0.0001
0.001
0.01
t, PULSE TIME (s)
Figure 13. Thermal Response
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5
0.1
1
10
NVD5862N
PACKAGE DIMENSIONS
DPAK (SINGLE GAUGE)
CASE 369C
ISSUE E
A
E
C
A
b3
B
c2
4
L3
D
1
2
Z
Z
H
DETAIL A
3
L4
NOTE 7
b2
e
b
TOP VIEW
c
SIDE VIEW
0.005 (0.13)
M
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCHES.
3. THERMAL PAD CONTOUR OPTIONAL WITHIN DIMENSIONS b3, L3 and Z.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR BURRS. MOLD
FLASH, PROTRUSIONS, OR GATE BURRS SHALL
NOT EXCEED 0.006 INCHES PER SIDE.
5. DIMENSIONS D AND E ARE DETERMINED AT THE
OUTERMOST EXTREMES OF THE PLASTIC BODY.
6. DATUMS A AND B ARE DETERMINED AT DATUM
PLANE H.
7. OPTIONAL MOLD FEATURE.
DIM
A
A1
b
b2
b3
c
c2
D
E
e
H
L
L1
L2
L3
L4
Z
BOTTOM VIEW
BOTTOM VIEW
ALTERNATE
CONSTRUCTION
C
H
L2
GAUGE
PLANE
C
L
L1
DETAIL A
SEATING
PLANE
A1
ROTATED 905 CW
SOLDERING FOOTPRINT*
6.20
0.244
2.58
0.102
5.80
0.228
MILLIMETERS
MIN
MAX
2.18
2.38
0.00
0.13
0.63
0.89
0.72
1.14
4.57
5.46
0.46
0.61
0.46
0.61
5.97
6.22
6.35
6.73
2.29 BSC
9.40 10.41
1.40
1.78
2.90 REF
0.51 BSC
0.89
1.27
−−−
1.01
3.93
−−−
STYLE 2:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
3.00
0.118
1.60
0.063
INCHES
MIN
MAX
0.086 0.094
0.000 0.005
0.025 0.035
0.028 0.045
0.180 0.215
0.018 0.024
0.018 0.024
0.235 0.245
0.250 0.265
0.090 BSC
0.370 0.410
0.055 0.070
0.114 REF
0.020 BSC
0.035 0.050
−−− 0.040
0.155
−−−
6.17
0.243
SCALE 3:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and the
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NVD5862N/D