NSS40301MDR2G Dual Matched 40 V, 6.0 A, Low VCE(sat) NPN Transistor These transistors are part of the ON Semiconductor e2PowerEdge family of Low VCE(sat) transistors. They are assembled to create a pair of devices highly matched in all parameters, including ultra low saturation voltage VCE(sat), high current gain and Base/Emitter turn on voltage. Typical applications are current mirrors, differential amplifiers, DC−DC converters and power management in portable and battery powered products such as cellular and cordless phones, PDAs, computers, printers, digital cameras and MP3 players. Other applications are low voltage motor controls in mass storage products such as disc drives and tape drives. In the automotive industry they can be used in air bag deployment and in the instrument cluster. The high current gain allows e2PowerEdge devices to be driven directly from PMU’s control outputs, and the Linear Gain (Beta) makes them ideal components in analog amplifiers. http://onsemi.com 40 VOLTS 6.0 AMPS NPN LOW VCE(sat) TRANSISTOR EQUIVALENT RDS(on) 44 mW COLLECTOR 5,6 COLLECTOR 7,8 4 BASE 2 BASE Features • Current Gain Matching to 10% • Base Emitter Voltage Matched to 2 mV • This is a Pb−Free Device 8 MAXIMUM RATINGS (TA = 25°C) Rating 1 Symbol Max Unit Collector-Emitter Voltage VCEO 40 Vdc Collector-Base Voltage VCBO 40 Vdc Emitter-Base Voltage VEBO 6.0 Vdc IC 3.0 A Collector Current − Peak ICM 6.0 A Electrostatic Discharge ESD HBM Class 3B MM Class C Collector Current − Continuous 3 EMITTER 1 EMITTER Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. SOIC−8 CASE 751 STYLE 16 DEVICE MARKING 8 1 N40301 AYWWG G N40301 = Specific Device Code A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device NSS40301MDR2G Package Shipping† SOIC−8 (Pb−Free) 2500 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2008 May, 2008 − Rev. 1 1 Publication Order Number: NSS40301MD/D NSS40301MDR2G THERMAL CHARACTERISTICS Characteristic Symbol Max Unit PD 576 mW 4.6 mW/°C RqJA 217 °C/W PD 676 mW 5.4 mW/°C RqJA 185 °C/W PD 653 mW 5.2 mW/°C RqJA 191 °C/W PD 783 mW 6.3 mW/°C RqJA 160 °C/W TJ, Tstg −55 to +150 °C SINGLE HEATED Total Device Dissipation (Note 1) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient (Note 1) Total Device Dissipation (Note 2) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient (Note 2) DUAL HEATED (Note 3) Total Device Dissipation (Note 1) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient (Note 1) Total Device Dissipation (Note 2) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient (Note 2) Junction and Storage Temperature Range 10 mm2, 1 oz. copper traces, still air. 100 mm2, 1 oz. copper traces, still air. 1. FR−4 @ 2. FR−4 @ 3. Dual heated values assume total power is the sum of two equally powered devices. http://onsemi.com 2 NSS40301MDR2G ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max 40 − − 40 − − 6.0 − − − − 0.1 − − 0.1 200 200 180 180 0.9 400 350 340 320 0.99 − − − − − − − − − 0.008 0.044 0.080 0.082 0.011 0.060 0.115 0.115 − 0.780 0.900 − − 0.650 0.3 0.750 2.0 100 − − Unit OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (IC = 10 mAdc, IB = 0) V(BR)CEO Collector −Base Breakdown Voltage (IC = 0.1 mAdc, IE = 0) V(BR)CBO Emitter −Base Breakdown Voltage (IE = 0.1 mAdc, IC = 0) V(BR)EBO Collector Cutoff Current (VCB = 40 Vdc, IE = 0) ICBO Emitter Cutoff Current (VEB = 6.0 Vdc) IEBO Vdc Vdc Vdc mAdc mAdc ON CHARACTERISTICS DC Current Gain (Note 4) (IC = 10 mA, VCE = 2.0 V) (IC = 500 mA, VCE = 2.0 V) (IC = 1.0 A, VCE = 2.0 V) (IC = 2.0 A, VCE = 2.0 V) (IC = 2.0 A, VCE = 2.0 V) (Note 5) hFE hFE(1)/hFE(2) Collector −Emitter Saturation Voltage (Note 4) (IC = 0.1 A, IB = 0.010 A) (IC = 1.0 A, IB = 0.100 A) (IC = 1.0 A, IB = 0.010 A) (IC = 2.0 A, IB = 0.200 A) VCE(sat) Base −Emitter Saturation Voltage (Note 4) (IC = 1.0 A, IB = 0.01 A) VBE(sat) Base −Emitter Turn−on Voltage (Note 4) (IC = 0.1 A, VCE = 2.0 V) (IC = 0.1 A, VCE = 2.0 V) (Note 6) VBE(on) VBE(1) − VBE(2) Cutoff Frequency (IC = 100 mA, VCE = 5.0 V, f = 100 MHz) fT V V V mV MHz Input Capacitance (VEB = 0.5 V, f = 1.0 MHz) Cibo − 320 450 pF Output Capacitance (VCB = 3.0 V, f = 1.0 MHz) Cobo − 40 50 pF Delay (VCC = 30 V, IC = 750 mA, IB1 = 15 mA) td − − 100 ns Rise (VCC = 30 V, IC = 750 mA, IB1 = 15 mA) tr − − 100 ns Storage (VCC = 30 V, IC = 750 mA, IB1 = 15 mA) ts − − 780 ns Fall (VCC = 30 V, IC = 750 mA, IB1 = 15 mA) tf − − 110 ns SWITCHING CHARACTERISTICS 4. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2%. 5. hFE(1)/hFE(2) is the ratio of one transistor compared to the other transistor within the same package. The smaller hFE is used as numerator. 6. VBE(1) − VBE(2) is the absolute difference of one transistor compared to the other transistor within the same package. http://onsemi.com 3 NSS40301MDR2G TYPICAL CHARACTERISTICS 0.14 25°C 0.12 0.10 −55°C 0.08 0.06 0.04 0.02 0 0.001 0.01 0.1 1 10 VBE(sat), BASE−EMITTER SATURATION VOLTAGE (V) 25°C (2.0 V) −55°C (5.0 V) 0.001 0.01 0.1 1 0.001 0.01 0.1 1 IC/IB = 10 0.9 10 −55°C 0.8 0.7 25°C 0.6 0.5 150°C 0.4 0.3 0.001 0.01 0.1 1 IC, COLLECTOR CURRENT (A) Figure 3. DC Current Gain vs. Collector Current Figure 4. Base Emitter Saturation Voltage vs. Collector Current 10 1.0 VCE = +2.0 V 0.7 VCE(sat), COLLECTOR−EMITTER VOLTAGE (V) VBE(on), BASE−EMITTER TURN−ON VOLTAGE (V) 0 IC, COLLECTOR CURRENT (A) 0.8 −55°C 25°C 0.6 0.5 150°C 0.4 0.3 0.2 0.05 0.2 10 1.0 0.9 −55°C 1.0 200 −55°C (2.0 V) 100 25°C 0.10 Figure 2. Collector Emitter Saturation Voltage vs. Collector Current 25°C (5.0 V) 300 0.15 Figure 1. Collector Emitter Saturation Voltage vs. Collector Current 600 150°C (2.0 V) 400 150°C 0.20 IC, COLLECTOR CURRENT (A) 150°C (5.0 V) 500 IC/IB = 100 0.25 IC, COLLECTOR CURRENT (A) 700 hFE, DC CURRENT GAIN 0.30 150°C IC/IB = 10 VCE(sat), COLLECTOR−EMITTER SATURATION VOLTAGE (V) VCE(sat), COLLECTOR−EMITTER SATURATION VOLTAGE (V) 0.16 0.001 0.01 0.1 1 10 0.9 100 mA 0.8 1A 3A 2A 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0.0001 0.001 0.01 IC, COLLECTOR CURRENT (A) Ib, BASE CURRENT (A) Figure 5. Base Emitter Turn−On Voltage vs. Collector Current Figure 6. Saturation Region http://onsemi.com 4 0.1 NSS40301MDR2G TYPICAL CHARACTERISTICS 80 Cobo, OUTPUT CAPACITANCE (pF) 375 350 325 300 275 250 Cibo (pF) 225 200 175 150 0 1 2 3 4 5 70 60 50 40 20 10 6 Cobo (pF) 30 0 5 10 15 20 25 30 VEB, EMITTER−BASE VOLTAGE (V) Vcb, COLLECTOR−BASE VOLTAGE (V) Figure 7. Input Capacitance Figure 8. Output Capacitance 10 1 ms 1s 10 ms 100 ms 1.0 IC (A) Cibo, INPUT CAPACITANCE (pF) 400 0.1 Thermal Limit 0.01 0.001 Single Pulse Test at TA = 25°C 0.01 0.1 1.0 10 VCE (Vdc) Figure 9. Safe Operating Area http://onsemi.com 5 100 35 40 NSS40301MDR2G PACKAGE DIMENSIONS SOIC−8 NB CASE 751−07 ISSUE AJ −X− NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION A AND B DO NOT INCLUDE MOLD PROTRUSION. 4. MAXIMUM MOLD PROTRUSION 0.15 (0.006) PER SIDE. 5. DIMENSION D DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.127 (0.005) TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION. 6. 751−01 THRU 751−06 ARE OBSOLETE. NEW STANDARD IS 751−07. A 8 5 S B 0.25 (0.010) M Y M 1 4 −Y− K G C N DIM A B C D G H J K M N S X 45 _ SEATING PLANE −Z− 0.10 (0.004) H D 0.25 (0.010) M Z Y S X M J S INCHES MIN MAX 0.189 0.197 0.150 0.157 0.053 0.069 0.013 0.020 0.050 BSC 0.004 0.010 0.007 0.010 0.016 0.050 0 _ 8 _ 0.010 0.020 0.228 0.244 STYLE 16: PIN 1. EMITTER, DIE #1 2. BASE, DIE #1 3. EMITTER, DIE #2 4. BASE, DIE #2 5. COLLECTOR, DIE #2 6. COLLECTOR, DIE #2 7. COLLECTOR, DIE #1 8. COLLECTOR, DIE #1 SOLDERING FOOTPRINT* 1.52 0.060 7.0 0.275 MILLIMETERS MIN MAX 4.80 5.00 3.80 4.00 1.35 1.75 0.33 0.51 1.27 BSC 0.10 0.25 0.19 0.25 0.40 1.27 0_ 8_ 0.25 0.50 5.80 6.20 4.0 0.155 0.6 0.024 1.270 0.050 SCALE 6:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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