NSS60200LT1G 60 V, 4.0 A, Low VCE(sat) PNP Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important. Typical applications are DC−DC converters and power management in portable and battery powered products such as cellular and cordless phones, PDAs, computers, printers, digital cameras and MP3 players. Other applications are low voltage motor controls in mass storage products such as disc drives and tape drives. In the automotive industry they can be used in air bag deployment and in the instrument cluster. The high current gain allows e2PowerEdge devices to be driven directly from PMU’s control outputs, and the Linear Gain (Beta) makes them ideal components in analog amplifiers. • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant http://onsemi.com −60 VOLTS, 4.0 AMPS PNP LOW VCE(sat) TRANSISTOR EQUIVALENT RDS(on) 80 mW COLLECTOR 3 1 BASE 2 EMITTER MAXIMUM RATINGS (TA = 25°C) Symbol Max Unit Collector-Emitter Voltage Rating VCEO −60 Vdc Collector-Base Voltage VCBO −80 Vdc Emitter-Base Voltage VEBO −7.0 Vdc IC −2.0 A ICM −4.0 A Symbol Max Unit Total Device Dissipation TA = 25°C Derate above 25°C PD (Note 1) 460 mW 3.7 mW/°C Thermal Resistance, Junction−to−Ambient RqJA (Note 1) 270 °C/W Total Device Dissipation TA = 25°C Derate above 25°C PD (Note 2) 540 mW 4.3 mW/°C Thermal Resistance, Junction−to−Ambient RqJA (Note 2) 230 °C/W Junction and Storage Temperature Range TJ, Tstg −55 to +150 °C Collector Current − Continuous Collector Current − Peak 3 1 2 SOT−23 (TO−236) CASE 318 STYLE 6 THERMAL CHARACTERISTICS Characteristic Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR−4 @ 100 mm2, 1 oz. copper traces. 2. FR−4 @ 500 mm2, 1 oz. copper traces. MARKING DIAGRAM VG MG G 1 VG = Specific Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION Device Package Shipping† NSS60200LT1G SOT−23 (Pb−Free) 3000/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2009 August, 2009 − Rev. 1 1 Publication Order Number: NSS60200L/D NSS60200LT1G ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Characteristic Min Typ Max −60 − − −80 − − −7.0 − − − − −0.1 − − −0.1 150 150 100 100 − 300 − − − − − − − − − − −0.017 −0.095 −0.180 −0.170 −0.030 −0.120 −0.270 −0.220 − − −0.900 − − −0.850 100 − − Unit OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (IC = −10 mAdc, IB = 0) V(BR)CEO Collector −Base Breakdown Voltage (IC = −0.1 mAdc, IE = 0) V(BR)CBO Emitter−Base Breakdown Voltage (IE = −0.1 mAdc, IC = 0) V(BR)EBO Collector Cutoff Current (VCB = −60 Vdc, IE = 0) ICBO Emitter Cutoff Current (VEB = −6.0 Vdc) IEBO Vdc Vdc Vdc mAdc mAdc ON CHARACTERISTICS DC Current Gain (Note 3) (IC = −10 mA, VCE = −2.0 V) (IC = −500 mA, VCE = −2.0 V) (IC = −1.0 A, VCE = −2.0 V) (IC = −2.0 A, VCE = −2.0 V) hFE Collector −Emitter Saturation Voltage (Note 3) (IC = −0.1 A, IB = −0.010 A) (IC = −1.0 A, IB = −0.100 A) (IC = −1.0 A, IB = −0.010 A) (IC = −2.0 A, IB = −0.200 A) VCE(sat) Base −Emitter Saturation Voltage (Note 3) (IC = −1.0 A, IB = −0.010 A) VBE(sat) Base −Emitter Turn−on Voltage (Note 3) (IC = −1.0 A, VCE = −2.0 V) VBE(on) V V V Cutoff Frequency (IC = −100 mA, VCE = −5.0 V, f = 100 MHz) fT MHz Input Capacitance (VEB = 0.5 V, f = 1.0 MHz) Cibo − − 325 pF Output Capacitance (VCB = 3.0 V, f = 1.0 MHz) Cobo − − 62 pF Delay (VCC = −30 V, IC = 750 mA, IB1 = 15 mA) td − − 60 ns Rise (VCC = −30 V, IC = 750 mA, IB1 = 15 mA) tr − − 120 ns Storage (VCC = −30 V, IC = 750 mA, IB1 = 15 mA) ts − − 400 ns Fall (VCC = −30 V, IC = 750 mA, IB1 = 15 mA) tf − − 130 ns SWITCHING CHARACTERISTICS 3. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2%. http://onsemi.com 2 NSS60200LT1G 0.50 VCE(sat) = 150°C IC/IB = 10 VCE(sat), COLLECTOR EMITTER SATURATION VOLTAGE (V) VCE(sat), COLLECTOR EMITTER SATURATION VOLTAGE (V) 0.2 0.15 25°C −55°C 0.1 0.05 0 0.001 0.01 0.1 1.0 0.40 0.35 0.30 0.25 0.20 VCE(sat) = 150°C 0.15 0.05 10 0 0.001 VBE(sat), BASE EMITTER SATURATION VOLTAGE (V) hFE, DC CURRENT GAIN 1.1 150°C (2.0 V) 300 25°C (5.0 V) 200 25°C (2.0 V) 150 −55°C (5.0 V) 100 −55°C (2.0 V) 50 0.001 0.01 0.1 1.0 0.8 25°C 0.7 0.6 0.5 150°C 0.4 0.001 0.01 0.1 1.0 Figure 3. DC Current Gain vs. Collector Current Figure 4. Base Emitter Saturation Voltage vs. Collector Current 1.0 IC/IB = 100 −55°C 0.7 25°C 0.6 0.5 150°C 0.4 0.3 0.001 0.01 0.1 10 −55°C IC, COLLECTOR CURRENT (A) VBE(on), BASE EMITTER TURN−ON VOLTAGE (V) VBE(sat), BASE EMITTER SATURATION VOLTAGE (V) 0.9 IC, COLLECTOR CURRENT (A) 0.8 0.2 1.0 IC/IB = 10 1.0 0.3 10 1.0 0.9 0.1 Figure 2. Collector Emitter Saturation Voltage vs. Collector Current 150°C (5.0 V) 250 0.01 IC, COLLECTOR CURRENT (A) Figure 1. Collector Emitter Saturation Voltage vs. Collector Current 350 25°C 0.10 IC, COLLECTOR CURRENT (A) 400 −55°C IC/IB = 100 0.45 1.0 10 VCE = −2.0 V 0.9 −55°C 0.8 0.7 25°C 0.6 0.5 150°C 0.4 0.3 0.2 0.001 0.01 0.1 1.0 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 5. Base Emitter Saturation Voltage vs. Collector Current Figure 6. Base Emitter Turn−On Voltage vs. Collector Current http://onsemi.com 3 10 10 NSS60200LT1G 375 1.0 VCE, COLLECTOR−EMITTER VOLTAGE (V) 10 mA 0.8 100 mA 0.6 0.4 300 mA 0.2 0 0.01 0.1 1.0 10 Cibo (pF) 350 Cibo, INPUT CAPACITANCE (pF) VCE (V) IC = 500 mA 325 300 275 250 225 200 175 150 100 0 IB, BASE CURRENT (mA) 3.0 5.0 4.0 6.0 Figure 8. Input Capacitance 10 Cobo (pF) 100 ms 10 ms 1 ms 1s 1.0 IC (A) Cobo, OUTPUT CAPACITANCE (pF) 2.0 VEB, EMITTER BASE VOLTAGE (V) Figure 7. Saturation Region 90 85 80 75 70 65 60 55 50 45 40 35 30 25 20 1.0 0.1 Thermal Limit 0.01 Single Pulse Test at Tamb = 25°C 0 5.0 10 15 20 25 30 0.001 0.1 35 1.0 10 VCB, COLLECTOR BASE VOLTAGE (V) VCE (Vdc) Figure 9. Output Capacitance Figure 10. Safe Operating Area http://onsemi.com 4 100 NSS60200LT1G PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AN NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318−01 THRU −07 AND −09 OBSOLETE, NEW STANDARD 318−08. D SEE VIEW C 3 HE E c 1 DIM A A1 b c D E e L L1 HE 2 e b 0.25 q A L A1 MIN 0.89 0.01 0.37 0.09 2.80 1.20 1.78 0.10 0.35 2.10 MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.13 0.18 2.90 3.04 1.30 1.40 1.90 2.04 0.20 0.30 0.54 0.69 2.40 2.64 MIN 0.035 0.001 0.015 0.003 0.110 0.047 0.070 0.004 0.014 0.083 INCHES NOM 0.040 0.002 0.018 0.005 0.114 0.051 0.075 0.008 0.021 0.094 MAX 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.012 0.029 0.104 STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR L1 VIEW C SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 0.8 0.031 SCALE 10:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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