MMBZxxVxL, SZMMBZxxVxL Series 40 Watt Peak Power Zener Transient Voltage Suppressors www.onsemi.com SOT−23 Dual Common Cathode Zeners for ESD Protection These dual monolithic silicon zener diodes are designed for applications requiring transient overvoltage protection capability. They are intended for use in voltage and ESD sensitive equipment such as computers, printers, business machines, communication systems, medical equipment and other applications. Their dual junction common cathode design protects two separate lines using only one package. These devices are ideal for situations where board space is at a premium. The SZ/MMBZ27VCL can be used to protect a single wire communication network form EMI and ESD transient surge voltages. The SZ/MMBZ27VCL is recommended by the Society of Automotive Engineers (SAE), February 2000, J2411 “Single Wire Can Network for Vehicle Applications” specification as a solution for transient voltage problems. SOT−23 CASE 318 STYLE 9 ANODE 1 3 CATHODE ANODE 2 MARKING DIAGRAM Specification Features: XXX MG G • SOT−23 Package Allows Either Two Separate Unidirectional Configurations or a Single Bidirectional Configuration • Working Peak Reverse Voltage Range − 12.8 V, 22 V, 31.2 V • Standard Zener Breakdown Voltage Range − 15 V, 27 V, 39 V • Peak Power − 40 W @ 1.0 ms (Bidirectional), per Figure 5 Waveform • ESD Rating of Class 3B (exceeding 16 kV) per the Human • • • • • Body Model ESD Rating of IEC61000−4−2 Level 4, ±30 kV Contact Discharge Low Leakage < 100 nA Flammability Rating: UL 94 V−O SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These are Pb−Free Devices Mechanical Characteristics: CASE: Void-free, transfer-molded, thermosetting plastic case FINISH: Corrosion resistant finish, easily solderable MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES: 260°C for 10 Seconds © Semiconductor Components Industries, LLC, 2015 September, 2015 − Rev. 15 1 1 XXX = 15D, 27C or 39C M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device Package Shipping† MMBZ15VDLT1G, SOT−23 SZMMBZ15VDLT1G (Pb−Free) 3,000 / Tape & Reel MMBZ15VDLT3G, SOT−23 SZMMBZ15VDLT3G (Pb−Free) 10,000 / Tape & Reel MMBZxxVCLT1G, SZMMBZxxVCLT1G SOT−23 (Pb−Free) 3,000 / Tape & Reel MMBZxxVCLT3G, SZMMBZxxVCLT3G SOT−23 (Pb−Free) 10,000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: MMBZ15VDLT1/D MMBZxxVxL, SZMMBZxxVxL Series MAXIMUM RATINGS Symbol Value Unit Peak Power Dissipation @ 1.0 ms (Note 1) @ TL ≤ 25°C Rating Ppk 40 Watts Total Power Dissipation on FR−5 Board (Note 2) @ TA = 25°C Derate above 25°C °PD° 225 1.8 mW mW/°C Thermal Resistance Junction−to−Ambient RqJA 556 °C/W Total Power Dissipation on Alumina Substrate (Note 3) @ TA = 25°C Derate above 25°C °PD° 300 2.4 ° mW mW/°C Thermal Resistance Junction−to−Ambient RqJA 417 °C/W Junction and Storage Temperature Range TJ, Tstg − 55 to +150 °C TL 260 °C Lead Solder Temperature − Maximum (10 Second Duration) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Nonrepetitive current pulse per Figure 5 and derate above TA = 25°C per Figure 6. 2. FR−5 = 1.0 x 0.75 x 0.62 in. 3. Alumina = 0.4 x 0.3 x 0.024 in., 99.5% alumina ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) I UNIDIRECTIONAL (Circuit tied to Pins 1 and 3 or 2 and 3) Symbol IPP Maximum Reverse Peak Pulse Current VC Clamping Voltage @ IPP VRWM IR VBR IT VBR IF Parameter VC VBR VRWM Working Peak Reverse Voltage V IR VF IT Maximum Reverse Leakage Current @ VRWM Breakdown Voltage @ IT Test Current Maximum Temperature Coefficient of VBR IF Forward Current VF Forward Voltage @ IF IPP Uni−Directional TVS ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) UNIDIRECTIONAL (Circuit tied to Pins 1 and 3 or Pins 2 and 3) (VF = 0.9 V Max @ IF = 10 mA) Breakdown Voltage Device* MMBZ15VDLT1G/T3G VBR (Note 4) (V) IR @ VRWM VC @ IPP (Note 5) @ IT Device Marking VRWM Volts nA Min Nom Max mA 15D 12.8 100 14.3 15 15.8 1.0 VC IPP VBR V A mV/5C 21.2 1.9 12 (VF = 1.1 V Max @ IF = 200 mA) Breakdown Voltage VBR (Note 4) (V) VC @ IPP (Note 5) @ IT VC IPP VBR V A mV/5C 38 1.0 26 0.76 35.3 Device Marking VRWM IR @ VRWM Volts nA Min Nom Max mA MMBZ27VCLT1G/T3G 27C 22 50 25.65 27 28.35 1.0 MMBZ39VCLT1G/T3G 39C 31.2 50 37.05 39 40.95 1.0 55 Device* 4. VBR measured at pulse test current IT at an ambient temperature of 25°C. 5. Surge current waveform per Figure 5 and derate per Figure 6 *Include SZ-prefix devices where applicable. www.onsemi.com 2 MMBZxxVxL, SZMMBZxxVxL Series TYPICAL CHARACTERISTICS MMBZ15VDL, SZMMBZ15VDL MMBZ27VCL, SZMMBZ27VCL BREAKDOWN VOLTAGE (VOLTS) (VBR @ I T ) BREAKDOWN VOLTAGE (VOLTS) (VBR @ I T ) 17 BIDIRECTIONAL 16 15 14 UNIDIRECTIONAL 13 -40 +125 +25 +85 TEMPERATURE (°C) 29 BIDIRECTIONAL 28 27 26 25 -55 Figure 2. Typical Breakdown Voltage versus Temperature 1000 300 100 250 PD , POWER DISSIPATION (mW) IR (nA) Figure 1. Typical Breakdown Voltage versus Temperature 10 1 0.1 0.01 -40 +25 +85 TEMPERATURE (°C) ALUMINA SUBSTRATE 200 150 100 FR-5 BOARD 50 0 +125 0 PEAK VALUE—IPP VALUE (%) 100 PULSE WIDTH (tP) IS DEFINED AS THAT POINT WHERE THE PEAK CURRENT DECAYS TO 50% OF IPP. IPP HALF VALUE— 2 50 tP 0 0 1 2 3 t, TIME (ms) 4 25 50 75 100 125 TEMPERATURE (°C) 150 175 Figure 4. Steady State Power Derating Curve PEAK PULSE DERATING IN % OF PEAK POWER OR CURRENT @ TA = 25 ° C Figure 3. Typical Leakage Current versus Temperature tr ≤ 10 ms +125 +25 +85 TEMPERATURE (°C) 100 90 80 70 60 50 40 30 20 10 0 0 Figure 5. Pulse Waveform 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Figure 6. Pulse Derating Curve www.onsemi.com 3 175 200 MMBZxxVxL, SZMMBZxxVxL Series TYPICAL APPLICATIONS VBatt ECU Connector Single Wire CAN Transceiver 47 mH Bus Loss of Ground Protection Circuit RLoad 9.09 kW 1% * Load CLoad 220 pF 10% GND *ESD Protection − MMBZ27VCL or equivalent. May be located in each ECU (CLoad needs to be reduced accordingly) or at a central point near the DLC. Figure 7. Single Wire CAN Network Figure is the recommended solution for transient EMI/ESD protection. This circuit is shown in the Society of Automotive Engineers February, 2000 J2411 “Single Wire CAN Network for Vehicle Applications” specification (Figure 6, page 11). Note: the dual common anode zener configuration shown above is electrically equivalent to a dual common cathode zener configuration. www.onsemi.com 4 MMBZxxVxL, SZMMBZxxVxL Series PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AP NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. D SEE VIEW C 3 HE E DIM A A1 b c D E e L L1 HE q c 1 2 b 0.25 e q A L A1 MIN 0.89 0.01 0.37 0.09 2.80 1.20 1.78 0.10 0.35 2.10 0° MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.13 0.18 2.90 3.04 1.30 1.40 1.90 2.04 0.20 0.30 0.54 0.69 2.40 2.64 −−− 10 ° MIN 0.035 0.001 0.015 0.003 0.110 0.047 0.070 0.004 0.014 0.083 0° INCHES NOM 0.040 0.002 0.018 0.005 0.114 0.051 0.075 0.008 0.021 0.094 −−− MAX 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.012 0.029 0.104 10° STYLE 9: PIN 1. ANODE 2. ANODE 3. CATHODE L1 VIEW C SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 0.8 0.031 SCALE 10:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and the are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: [email protected] N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81−3−5817−1050 www.onsemi.com 5 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative MMBZ15VDLT1/D