NLX1G332 3-Input OR Gate The NLX1G332 is an advanced high−speed 3−input CMOS OR gate in ultra−small footprint. The NLX1G332 input structures provide protection when voltages up to 7.0 V are applied, regardless of the supply voltage. www.onsemi.com Features High Speed: tPD = 2.4 ns (Typ) @ VCC = 5.0 V Designed for 1.65 V to 5.5 V VCC Operation Low Power Dissipation: ICC = 1 mA (Max) at TA = 25°C 24 mA Balanced Output Source and Sink Capability Balanced Propagation Delays Overvoltage Tolerant (OVT) Input Pins Ultra−Small Packages These are Pb−Free Devices MARKING DIAGRAMS UDFN6 1.0 x 1.0 CASE 517BX 6M UDFN6 1.2 x 1.0 CASE 517AA M 1 6 • • • • • • • • 1 A 1 6 C UDFN6 1.45 x 1.0 CASE 517AQ 6M 1 GND 2 5 VCC X M G B 3 4 = Device Marking = Date Code = Pb−Free Package Y ORDERING INFORMATION Figure 1. Pinout (Top View) See detailed ordering and shipping information in the package dimensions section on page 4 of this data sheet. PIN ASSIGNMENT A ≥1 B Y C Figure 2. Logic Symbol Pin Function 1 A 2 GND 3 B 4 Y 5 VCC 6 C FUNCTION TABLE Output Input A B C Y H X X L X H X L X X H L H H H L H − HIGH Logic Level L − LOW Logic Level X = Either LOW or HIGH Logic Level © Semiconductor Components Industries, LLC, 2016 June, 2016 − Rev. 5 1 Publication Order Number: NLX1G332/D NLX1G332 MAXIMUM RATINGS Symbol Value Unit VCC DC Supply Voltage −0.5 to +7.0 V VIN DC Input Voltage −0.5 to +7.0 V DC Output Voltage −0.5 to +7.0 V VIN < GND −50 mA VOUT < GND −50 mA VOUT Parameter IIK DC Input Diode Current IOK DC Output Diode Current IO DC Output Source/Sink Current ±50 mA ICC DC Supply Current Per Supply Pin ±100 mA IGND DC Ground Current per Ground Pin ±100 mA TSTG Storage Temperature Range −65 to +150 °C TL Lead Temperature, 1 mm from Case for 10 Seconds 260 °C TJ Junction Temperature Under Bias 150 °C qJA Thermal Resistance (Note 1) 496 °C/W PD Power Dissipation in Still Air @ 85°C 252 mW MSL FR VESD ILATCHUP Moisture Sensitivity Level 1 Flammability Rating Oxygen Index: 28 to 34 ESD Withstand Voltage UL 94 V−0 @ 0.125 in Human Body Model (Note 2) Machine Model (Note 3) Charged Device Model (Note 4) Latchup Performance Above VCC and Below GND at 125 °C (Note 5) >2000 >200 N/A V ±500 mA Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Measured with minimum pad spacing on an FR4 board, using 10 mm−by−1 inch, 2 ounce copper trace no air flow. 2. Tested to EIA/JESD22−A114−A. 3. Tested to EIA/JESD22−A115−A. 4. Tested to JESD22−C101−A. 5. Tested to EIA / JESD78. RECOMMENDED OPERATING CONDITIONS Symbol Parameter VCC Positive DC Supply Voltage VIN Digital Input Voltage (Note 6) VOUT Operating Data Retention Only Output Voltage TA Operating Free−Air Temperature Dt/DV Input Transition Rise or Fall Rate VCC = 1.8 V ± 0.15 V VCC = 2.5 V ± 0.2 V VCC = 3.3 V ± 0.3 V VCC = 5.0 V ± 0.5 V Min Max Unit 1.65 1.5 5.5 5.5 V 0 5.5 V 0 5.5 V −55 +125 °C 0 0 0 0 20 20 10 5 ns/V 6. Unused inputs may not be left open. All inputs must be tied to a high or low−logic input voltage level. Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond the Recommended Operating Ranges limits may affect device reliability. www.onsemi.com 2 NLX1G332 DC ELECTRICAL CHARACTERISTICS Symbol Parameter VIH Low−Level Input Voltage VIL VOH VOL High− Level Output Voltage Low−Level Output Voltage VIN = VIH or VIL IOH = −100 mA 1.65 0.75 x VCC 0.75 x VCC 2.3 to 5.5 0.70 x VCC 0.70 x VCC Typ Max Min Max 0.25 x VCC 0.25 x VCC 2.3 − 5.5 0.30 x VCC 0.30 x VCC 1.65 − 5.5 VCC−0.1 VCC VCC−0.1 1.65 2.3 2.7 3.0 3.0 4.5 1.29 1.9 2.2 2.4 2.3 3.8 1.52 2.15 2.4 2.8 2.68 4.2 1.29 1.9 2.2 2.4 2.3 3.8 1.65 − 5.5 Unit V 1.65 VIN = VIH or VIL IOH = −4 mA IOH = −8 mA IOH = −12 mA IOH = −16 mA IOH = −24 mA IOH = −32 mA VIN = VIH or VIL IOL = 100 mA TA = −555C to +1255C Min Conditions Low−Level Input Voltage TA = 25 5C VCC (V) V V 0.1 0.1 0.24 0.3 0.4 0.4 0.55 0.55 0.24 0.3 0.4 0.4 0.55 0.55 V VIN = VIH or VIL IOH = 4 mA IOH = 8 mA IOH = 12 mA IOH = 16 mA IOH = 24 mA IOH = 32 mA 1.65 2.3 2.7 3.0 3.0 4.5 Input Leakage Current 0 v VIN v 5.5V 0 to 5.5 ±0.1 ±1.0 mA IOFF Power−Off Output Leakage Current VIN or VOUT = 5.5 V 0 1.0 10 mA ICC Quiescent Supply Current 0 v VIN v VCC 5.5 1.0 10 mA IIN 0.08 0.1 0.12 0.15 0.22 0.22 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. AC ELECTRICAL CHARACTERISTICS (Input tr = tf = 2.5 nS) Symbol tPLH, tPHL Parameter Propagation Delay, Input to Output TA = −555C to +1255C TA = 25 5C VCC (V) Test Condition Min Typ Max Min Max Unit 1.65−1.95 RL = 1 MW, CL = 15 pF 2.0 5.5 18.5 2.0 19 ns 2.3−2.7 RL = 1 MW, CL = 15 pF 0.8 3.0 11 0.8 11.5 3.0−3.6 RL = 1 MW, CL = 15 pF 0.5 2.6 7.5 0.5 8.0 RL = 500 W, CL = 50 pF 1.5 3.0 8.5 1.5 9.0 RL = 1 MW, CL = 15 pF 0.5 2.2 5.5 0.5 6.0 RL = 500 W, CL = 50 pF 0.8 2.4 7.0 0.8 7.5 4.5−5.5 CIN Input Capacitance 5.5 VIN = 0 V or VCC 4.0 pF CPD Power Dissipation Capacitance (Note 7) 3.3 5.5 10 MHz VIN = 0 V or VCC 20 26 pF 7. CPD is defined as the value of the internal equivalent capacitance which is calculated from the dynamic operating current consumption without load. Average operating current can be obtained by the equation ICC(OPR) = CPD • VCC • fin + ICC. CPD is used to determine the no−load dynamic power consumption: PD = CPD • VCC2 • fin + ICC • VCC. www.onsemi.com 3 NLX1G332 VCC A and B INPUT 50% OUTPUT GND tPLH Y RL tPHL 50% VCC CL A 1 MHz square input wave is recommended for propagation delay tests tR = tF = 2.5 ns, 10% to 90%, f = 1 MHz, tW = 500 ns Figure 3. Switching Waveforms Figure 4. Test Circuit ORDERING INFORMATION Package Shipping† NLX1G332MUTCG In Development UDFN6, 1.2 x 1.0, 0.4P (Pb−Free) 3000 / Tape & Reel NLX1G332AMUTCG UDFN6, 1.45 x 1.0, 0.5P (Pb−Free) 3000 / Tape & Reel NLX1G332CMUTCG UDFN6, 1.0 x 1.0, 0.35P (Pb−Free) 3000 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 4 NLX1G332 PACKAGE DIMENSIONS UDFN6, 1.2x1.0, 0.4P CASE 517AA−01 ISSUE D EDGE OF PACKAGE PIN ONE REFERENCE 2X 0.10 C L1 ÉÉ ÉÉ E DETAIL A Bottom View (Optional) TOP VIEW 2X EXPOSED Cu 0.10 C (A3) 0.10 C A1 A 10X 0.08 C ÉÉÉ ÉÉÉ A3 DETAIL B Side View (Optional) 5X MILLIMETERS MIN MAX 0.45 0.55 0.00 0.05 0.127 REF 0.15 0.25 1.20 BSC 1.00 BSC 0.40 BSC 0.30 0.40 0.00 0.15 0.40 0.50 MOUNTING FOOTPRINT* 6X C A1 DIM A A1 A3 b D E e L L1 L2 MOLD CMPD SEATING PLANE SIDE VIEW 1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION b APPLIES TO PLATED TERMINAL AND IS MEASURED BETWEEN 0.25 AND 0.30 mm FROM TERMINAL. 4. COPLANARITY APPLIES TO THE EXPOSED PAD AS WELL AS THE TERMINALS. A B D 6X 0.42 0.22 L 3 L2 6X b 0.10 C A B 0.05 C 6 4 0.40 PITCH e NOTE 3 1.07 DIMENSIONS: MILLIMETERS BOTTOM VIEW *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. www.onsemi.com 5 NLX1G332 PACKAGE DIMENSIONS UDFN6 1.45x1.0, 0.5P CASE 517AQ ISSUE O A B D L L L1 PIN ONE REFERENCE 0.10 C ÉÉÉ ÉÉÉ DETAIL A E OPTIONAL CONSTRUCTIONS DETAIL B MOLD CMPD DETAIL B 0.05 C 6X DIM A A1 A2 b D E e L L1 ÉÉ ÉÉ EXPOSED Cu TOP VIEW 0.10 C NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION b APPLIES TO PLATED TERMINAL AND IS MEASURED BETWEEN 0.15 AND 0.30 mm FROM THE TERMINAL TIP. OPTIONAL CONSTRUCTIONS A MILLIMETERS MIN MAX 0.45 0.55 0.00 0.05 0.07 REF 0.20 0.30 1.45 BSC 1.00 BSC 0.50 BSC 0.30 0.40 −−− 0.15 MOUNTING FOOTPRINT 0.05 C A1 A2 SIDE VIEW e 6X C 6X SEATING PLANE L 1.24 3 1 DETAIL A 6X 0.53 6 0.30 PACKAGE OUTLINE 4 BOTTOM VIEW 6X 0.50 PITCH DIMENSIONS: MILLIMETERS b 0.10 C A B 0.05 C 1 NOTE 3 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. www.onsemi.com 6 NLX1G332 PACKAGE DIMENSIONS UDFN6 1.0x1.0, 0.35P CASE 517BX ISSUE O PIN ONE REFERENCE NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION b APPLIES TO PLATED TERMINAL AND IS MEASURED BETWEEN 0.15 AND 0.20 MM FROM TERMINAL TIP. 4. PACKAGE DIMENSIONS EXCLUSIVE OF BURRS AND MOLD FLASH. A B D ÉÉÉ ÉÉÉ ÉÉÉ E 0.10 C 2X 2X 0.10 C DIM A A1 A3 b D E e L L1 TOP VIEW A3 0.05 C A MILLIMETERS MIN MAX 0.45 0.55 0.00 0.05 0.13 REF 0.12 0.22 1.00 BSC 1.00 BSC 0.35 BSC 0.25 0.35 0.30 0.40 0.05 C SIDE VIEW A1 C RECOMMENDED SOLDERING FOOTPRINT* SEATING PLANE 5X e 5X 0.48 L 6X 0.22 3 1 L1 1.18 6 4 6X BOTTOM VIEW b 0.10 M C A B 0.05 M C 0.53 1 PKG OUTLINE NOTE 3 0.35 PITCH DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. MiniGate is a trademark of Semiconductor Components Industries, LLC (SCILLC). ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. 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