MOSFET MetalOxideSemiconductorFieldEffectTransistor OptiMOSTM OptiMOS™3Power-MOSFET,75V BSF450NE7NH3G DataSheet Rev.2.2 Final PowerManagement&Multimarket OptiMOSª3Power-MOSFET,75V BSF450NE7NH3G 1Description CanPAKS Features •OptimizedtechnologyforDC/DCconverters •ExcellentgatechargexRDS(on)product(FOM) •Superiorthermalresistance •Dualsidedcooling •Lowparasiticinductance •Lowprofile(<0.7mm) •N-channel,normallevel •100%avalanchetested •Pb-freeplating;RoHScompliant •QualifiedaccordingtoJEDEC1)fortargetapplications •CompatiblewithDirectFET®packageSTfootprintandoutline Table1KeyPerformanceParameters Parameter Value Unit VDS 75 V RDS(on),max 45 mΩ ID 15 A Type/OrderingCode Package BSF450NE7NH3 G MG-WDSON-2 1) Marking 0307 RelatedLinks - J-STD20 and JESD22 Final Data Sheet 2 Rev.2.2,2015-03-30 OptiMOSª3Power-MOSFET,75V BSF450NE7NH3G TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Final Data Sheet 3 Rev.2.2,2015-03-30 OptiMOSª3Power-MOSFET,75V BSF450NE7NH3G 2Maximumratings atTj=25°C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Continuous drain current Values Unit Note/TestCondition 15 10 5 A VGS=10V,TC=25°C VGS=10V,TC=100°C VGS=10V,TA=25°C,RthJA=58K/W1) - 60 A TC=25°C - - 17 mJ ID=8A,RGS=25Ω VGS -20 - 20 V - Power dissipation Ptot - - 18 2.2 W TC=25°C TA=25°C,RthJA=58K/W1) Operating and storage temperature Tj,Tstg -40 - 150 °C IEC climatic category; DIN IEC 68-1: 55/150/56 Unit Note/TestCondition Min. Typ. Max. ID - - ID,pulse - Avalanche energy, single pulse EAS Gate source voltage Pulsed drain current2) 3) 3Thermalcharacteristics Table3Thermalcharacteristics Parameter Symbol Thermal resistance, junction - case, bottom Values Min. Typ. Max. RthJC - 1.0 - K/W - Thermal resistance, junction - case, top RthJC - - 7 K/W - Device on PCB, 6 cm2 cooling area1) RthJA - - 58 K/W - 1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 2) See figure 3 for more detailed information 3) See figure 13 for more detailed information Final Data Sheet 4 Rev.2.2,2015-03-30 OptiMOSª3Power-MOSFET,75V BSF450NE7NH3G 4Electricalcharacteristics Table4Staticcharacteristics Parameter Symbol Drain-source breakdown voltage Values Unit Note/TestCondition - V VGS=0V,ID=1mA 2.9 3.5 V VDS=VGS,ID=8µA - 0.1 10 10 100 µA VDS=75V,VGS=0V,Tj=25°C VDS=75V,VGS=0V,Tj=125°C IGSS - 10 100 nA VGS=20V,VDS=0V Drain-source on-state resistance RDS(on) - 37.6 46.5 45 62 mΩ VGS=10V,ID=8A VGS=7V,ID=4A Gate resistance RG - 1.5 - Ω - Transconductance gfs 5.5 11 - S |VDS|>2|ID|RDS(on)max,ID=8A Unit Note/TestCondition Min. Typ. Max. V(BR)DSS 75 - Gate threshold voltage VGS(th) 2.3 Zero gate voltage drain current IDSS Gate-source leakage current Table5Dynamiccharacteristics Parameter Symbol Input capacitance Values Min. Typ. Max. Ciss - 390 - pF VGS=0V,VDS=37.5V,f=1MHz Output capacitance Coss - 110 - pF VGS=0V,VDS=37.5V,f=1MHz Reverse transfer capacitance Crss - 22 - pF VGS=0V,VDS=37.5V,f=1MHz Turn-on delay time td(on) - 8.0 - ns VDD=37.5V,VGS=10V,ID=8A, RG,ext=1.6Ω Rise time tr - 11.3 - ns VDD=37.5V,VGS=10V,ID=8A, RG,ext=1.6Ω Turn-off delay time td(off) - 11 - ns VDD=37.5V,VGS=10V,ID=8A, RG,ext=1.6Ω Fall time tf - 3.2 - ns VDD=37.5V,VGS=10V,ID=8A, RG,ext=1.6Ω Unit Note/TestCondition Table6Gatechargecharacteristics1) Parameter Symbol Gate to source charge Values Min. Typ. Max. Qgs - 2 - nC VDD=37.5V,ID=8A,VGS=0to10V Gate to drain charge Qgd - 2 - nC VDD=37.5V,ID=8A,VGS=0to10V Switching charge Qsw - 3 - nC VDD=37.5V,ID=8A,VGS=0to10V Gate charge total Qg - 6 - nC VDD=37.5V,ID=8A,VGS=0to10V Gate plateau voltage Vplateau - 5.5 - V VDD=37.5V,ID=8A,VGS=0to10V Output charge Qoss - 7 - nC VDD=37.5V,VGS=0V 1) See ″Gate charge waveforms″ for parameter definition Final Data Sheet 5 Rev.2.2,2015-03-30 OptiMOSª3Power-MOSFET,75V BSF450NE7NH3G Table7Reversediode Parameter Symbol Diode continuous forward current Values Unit Note/TestCondition 15 A TC=25°C - 60 A TC=25°C - 0.9 1.2 V VGS=0V,IF=8A,Tj=25°C trr - 24 - ns VR=37.5V,IF=IS,diF/dt=400A/µs Qrr - 87 - nC VR=37.5V,IF=IS,diF/dt=400A/µs Min. Typ. Max. IS - - Diode pulse current IS,pulse - Diode forward voltage VSD Reverse recovery time Reverse recovery charge Final Data Sheet 6 Rev.2.2,2015-03-30 OptiMOSª3Power-MOSFET,75V BSF450NE7NH3G 5Electricalcharacteristicsdiagrams Diagram2:Draincurrent 20 20 15 15 ID[A] Ptot[W] Diagram1:Powerdissipation 10 10 5 0 5 0 40 80 120 0 160 0 25 50 75 TC[°C] 100 125 150 175 TC[°C] Ptot=f(TC) ID=f(TC);VGS≥10V Diagram3:Safeoperatingarea Diagram4:Max.transientthermalimpedance 3 101 10 0.5 2 10 0.2 1 µs 10 10 µs ID[A] 100 µs 1 ms 100 10 ms DC 0.1 0.05 ZthJC[K/W] 101 0 0.02 0.01 10-1 single pulse 10-1 10-2 10-1 100 101 102 10-2 10-6 10-5 VDS[V] 10-3 10-2 10-1 tp[s] ID=f(VDS);TC=25°C;D=0;parameter:tp Final Data Sheet 10-4 ZthJC=f(tp);parameter:D=tp/T 7 Rev.2.2,2015-03-30 OptiMOSª3Power-MOSFET,75V BSF450NE7NH3G Diagram5:Typ.outputcharacteristics Diagram6:Typ.drain-sourceonresistance 60 80 5.5 V 10 V 70 6V 8V 45 60 7V RDS(on)[mΩ] ID[A] 50 7V 30 15 8V 40 10 V 30 20 6V 10 5.5 V 5V 0 0 1 2 0 3 0 20 VDS[V] 40 60 ID[A] ID=f(VDS);Tj=25°C;parameter:VGS RDS(on)=f(ID);Tj=25°C;parameter:VGS Diagram7:Typ.transfercharacteristics Diagram8:Typ.forwardtransconductance 60 15 45 gfs[S] ID[A] 10 30 5 15 150 °C 0 0 2 25 °C 4 6 8 10 0 0 VGS[V] 10 15 ID[A] ID=f(VGS);|VDS|>2|ID|RDS(on)max;parameter:Tj Final Data Sheet 5 gfs=f(ID);Tj=25°C 8 Rev.2.2,2015-03-30 OptiMOSª3Power-MOSFET,75V BSF450NE7NH3G Diagram9:Drain-sourceon-stateresistance Diagram10:Typ.gatethresholdvoltage 80 4 70 80 µA 60 3 max 8 µA VGS(th)[V] RDS(on)[mΩ] 50 typ 40 2 30 20 1 10 0 -60 -20 20 60 100 140 0 -60 180 -20 20 60 Tj[°C] 100 140 RDS(on)=f(Tj);ID=8A;VGS=10V VGS(th)=f(Tj);VGS=VDS Diagram11:Typ.capacitances Diagram12:Forwardcharacteristicsofreversediode 3 102 10 25 °C 150 °C 25°C 98% 150°C 98% Ciss Coss IF[A] C[pF] 180 Tj[°C] 2 10 101 Crss 101 0 25 50 75 100 0.0 0.5 VDS[V] 1.5 2.0 2.5 VSD[V] C=f(VDS);VGS=0V;f=1MHz Final Data Sheet 1.0 IF=f(VSD);parameter:Tj 9 Rev.2.2,2015-03-30 OptiMOSª3Power-MOSFET,75V BSF450NE7NH3G Diagram13:Avalanchecharacteristics Diagram14:Typ.gatecharge 102 10 37.5V 15 V 9 60 V 8 7 VGS[V] IAV[A] 6 101 5 4 3 125°C 100°C 25°C 2 1 100 100 101 102 103 104 0 0 1 tAV[µs] 2 3 4 5 6 7 Qgate[nC] IAS=f(tAV);RGS=25Ω;parameter:Tj(start) VGS=f(Qgate);ID=8Apulsed;parameter:VDD Diagram15:Drain-sourcebreakdownvoltage Gate charge waveforms 90 VBR(DSS)[V] 80 70 60 -60 -20 20 60 100 140 180 Tj[°C] VBR(DSS)=f(Tj);ID=1mA Final Data Sheet 10 Rev.2.2,2015-03-30 OptiMOSª3Power-MOSFET,75V BSF450NE7NH3G 6PackageOutlines Figure1OutlineMG-WDSON-2,dimensionsinmm/inches Final Data Sheet 11 Rev.2.2,2015-03-30 OptiMOSª3Power-MOSFET,75V BSF450NE7NH3G Figure2OutlineMG-WDSON-2Tape Final Data Sheet 12 Rev.2.2,2015-03-30 OptiMOSª3Power-MOSFET,75V BSF450NE7NH3G Figure3OutlineMG-WDSON-2Boardpad Final Data Sheet 13 Rev.2.2,2015-03-30 OptiMOSª3Power-MOSFET,75V BSF450NE7NH3G RevisionHistory BSF450NE7NH3 G Revision:2015-03-30,Rev.2.2 Previous Revision Revision Date Subjects (major changes since last revision) 2.2 2015-03-30 Release of Final version WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to: [email protected] Publishedby InfineonTechnologiesAG 81726München,Germany ©2015InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.With respecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplication ofthedevice,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithout limitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. Final Data Sheet 14 Rev.2.2,2015-03-30